共查询到16条相似文献,搜索用时 62 毫秒
1.
2.
3.
4.
5.
6.
7.
8.
9.
从理论上计算了厚度为110nm的W0.95Ni0.05金属薄膜应变条在InGaAsP/InP双异质结构中形成的应力场分布,及由应力场分布引起的折射率变化.在W0.95Ni0.05金属薄膜应变条下半导体中0.2-2μm深度范围内,由应变引起条形波导轴中央的介电常数ε相应增加2.3×10-1-2.2×10-2(2μm应变条宽)和1.2×10-1-4.1×10-2(4μm应变条宽).同时,测量了由W0.95Ni0.05金属薄膜应变条所形成的InGaAsP/InP双异质结光弹效应波导结构导波的近场光模分布.从理论计算和实验结果两方面证实了InGaAsP/InP双异质结光弹效应波导结构对侧向光具有良好的限制作用. 相似文献
10.
从理论上计算了厚度为 110 nm的 W0 .95 Ni0 .0 5 金属薄膜应变条在 In Ga As P/ In P双异质结构中形成的应力场分布 ,及由应力场分布引起的折射率变化 .在 W0 .95 Ni0 .0 5 金属薄膜应变条下半导体中 0 .2— 2μm深度范围内 ,由应变引起条形波导轴中央的介电常数 ε相应增加 2 .3× 10 - 1— 2 .2× 10 - 2 (2 μm应变条宽 )和 1.2× 10 - 1— 4.1× 10 - 2(4μm应变条宽 ) .同时 ,测量了由 W0 .95 Ni0 .0 5 金属薄膜应变条所形成的 In Ga As P/ In P双异质结光弹效应波导结构导波的近场光模分布 .从理论计算和实验结果两方面证实了 In Ga As P/ In P 相似文献
11.
12.
The coherency state of MOCVD grown InGaAsP/InP double-heterostructure wafers was examined and their effects on the structural
properties were determined in this study. Lattice mismatches were measured using {511} asymmetric and (400) symmetric x-ray
reflections. The chemical lattice misfit and the elastic strain were also calculated. Misfit dislocations were examined by
both x-ray topography and photoluminescence imaging. The x-ray full width at half maximum (FWHM) varied with the degree of
mismatch. The largest FWHM was obtained for samples containing the misfit dislocations. It was found that FWHM is influenced
not only by the plastic deformation, but also by the elastic strain. To model the dependence of the FWHM, the radius of curvature
was measured, and its contribution to the x-ray line broadening was calculated. Also, the contribution from misfit dislocations
was taken into account. This model assumes that the dislocations are planar and interact weakly with each other. Good agreement
between measured and calculated values was obtained. Thus, it is concluded that the major contribution to x-ray line broadening
ofelastically strained sample is the lattice curvature induced by misfit strain, and that the dominant factor affecting x-ray FWHM ofplastically deformed sample is lattice relaxation induced by misfit dislocation. 相似文献
13.
Q. Z. Liu X. S. Jiang L. S. Yu Z. F. Guan P. K. L. Yu S. S. Lau 《Journal of Electronic Materials》1995,24(8):991-997
A novel processing technique has been developed to fabricate planar electroabsorption waveguide modulators in compound semiconductor
heterostructures. The lateral confinement of light is achieved by introducing controllable, reproducible, and stable stresses
into semiconductor heterostructures using WNi surface stressor stripes, which also serve as electrodes for the waveguide modulators.
Self-aligned helium implantation is employed to achieve electrical isolation using the Stressors as the templates for the
ion masks. An increase as large as 33000 times has been obtained in the dc resistance between the neighboring waveguide modulators
25 μm apart. Propagation loss of 1.7 dB/cm is observed in the photoelastic waveguides at a wavelength of 1.53 μm following
the He implantation. A post-implant thermal annealing at 310°C for 40 min increases the dc resistance between the neighboring
devices to the maximum value, and at the same time reduces the optical loss to its value before ion implantation (less than
1 dB/cm). Using a combination of the photoelastic effect and helium implantation, planar InGaAsP/InP Franz-Keldysh-effect
waveguide modulators 430 μm long with a 10 dB extinction ratio at 3 V for the TM mode have been fabricated. Planar electroabsorption
quantum-confined Stark effect waveguide modulators have also been demonstrated. This planar device processing technique may
prove valuable in future photonic integrated circuit technology. 相似文献
14.
采用X射线光电子能谱(XPS)对InGaAsP/InP异质结构MOCVD外延晶片作了表面薄层元素、组分定性、定量和深度分布分析。利用XPS组分定量数据与带隙和组分量数据与晶体常数的经验公式计算带隙、晶格常数和失配率,并与光压谱(PVS)测定的带隙值和X射线双晶衍射(DCD)测定的失配率作了比较,比较结果是满意的。实验和分析表明,在研究MOCVD外延膜材料表面组分和表面点阵结构方面。 相似文献
15.
在国产分子束外延设备的基础上 ,利用新型三温区阀控裂解源炉 ,对 In P及 In Ga As P材料的全固源分子束外延 (SSMBE)生长进行了研究。生长了高质量的 In P外延层 ,表面缺陷密度为 65cm- 2 ,非故意掺杂电子浓度约为 1× 1 0 16cm- 3.In P外延层的表面形貌、生长速率及 p型掺杂特性与生长温度密切相关 .研究了 In Ga As P外延材料的组分特性 ,发现在一定温度范围内生长温度对 族原子的吸附系数有较大影响 .最后得到了晶格匹配的 In0 .56Ga0 .4 4 As0 .94 P0 .0 6材料 ,低温光致发光谱峰位于 1 50 7nm,FWHM为 9.8me V. 相似文献