数字闭环加速度计带宽测试方法的研究

为了消除传统电模拟法引入的激励信号对力矩器驱动模块造成的影响,提出了一种在数字闭环加速度计系统反馈回路数模转换器输入端叠加一个激励信号来测试系统带宽的方法.通过对该方法的电激励模型进行分析,表明在带宽测试时系统反馈回路D/A输入端叠加激励信号可以等效为外界输入的加速度.搭建测试平台测试系统带宽,实验表明,用该方法测得的数字闭环加速度计系统带宽与传统机械振动法的测试结果相接近.该方法未增加其它电路,降低了系统的复杂度,消除了电模拟法外加激励信号源对力矩器驱动模块的影响.此外,该方法操作快速简单、便于在线测试,可满足大多数数字闭环加速度计的带宽测试要求.     

A batch-fabricated silicon accelerometer

An extremely small batch-fabricatable accelerometer has been developed using silicon IC technology. The device, 3 mm long and weighing 0.02 g, is a simple cantilevered beam and mass structure sealed into a silicon and glass package. The fabrication of the accelerometer is described, and the theory behind its operation developed. Experimental results on sensitivity, frequency response, and linearity are presented and found to agree with theory. The accelerometer is capable of measuring accelerations from 0.001 to 50 g over a 100-Hz bandwidth, while readily implemented geometry changes allow these performance characteristics to be varied over a wide range to meet the needs of differing applications.     

MOS环振式数字加速度传感器

提出了一种新的环振式数字加速度传感器,它采用做在硅梁上的MOS环形振荡器作为敏感元件,两个反方向变化的环振输出信号通过集成在片内的混频器实现频率相减.该传感器具有准数字输出、灵敏度高、温度系数低以及制作工艺简单等特点.分析了环形振荡器的频率特性,以及环形振荡器的谐振频率和加速度的关系,分析并设计了加速度传感器的环形振荡器电路、混频器电路、物理结构以及制作工艺,并制作了样品,其灵敏度为6 .91k Hz/g.     

MEMS隧道加速度计的系统分析与设计

主要论述了一种新型体硅工艺MEMS隧道加速度计的系统分析与设计 ,对加速度计敏感头与伺服反馈电路组成的系统进行系统建模 ,其中包含了结构的模型和反馈控制电路的模型。以系统模型作为基础 ,分析了器件工作所必须的条件 ,对器件的结构参数和反馈控制电路的参数进行了设计 ,并给出了系统的静态与动态输出。另外 ,本文提出了参数敏感度因子的概念及其计算方法 ,利用这种方法可以对每一个参数计算其对应的敏感因子 ,从而为参数容差设计提供了依据     

一种具有“8悬臂梁-质量块”结构的新型硅微加速度计

提出了一种具有"8悬臂梁-质量块"结构的新型三明治式硅微机械电容式加速度计,用微机械加工工艺在(111)硅片上制作出了具有信号输出的器件.该加速度计的惯性质量块由同一(111)硅片上下表面对称分布的8根悬臂梁支撑.这些悬臂梁是利用(111)硅在KOH溶液中的各向异性腐蚀特性结合深反应离子刻蚀(DRIE)实现的,其尺度精确可控,保证了结构的对称性.该加速度计的谐振频率为2.08kHz,品质因子Q为21.4,灵敏度为93.7mV/g.     

基于阳极键合干法刻蚀技术的MEMS隧道加速度计的加工及测试

提出了一种基于北京大学硅玻璃键合深刻蚀释放工艺的扩展工艺,用来加工微型隧道加速度计.采用HP4145B半导体分析仪在大气环境下对所加工的器件进行了开环测试,验证了隧道电流的存在以及隧道间隙与隧道电流之间的指数关系.实验结果外推出的隧道势垒的范围为1.182～2.177eV.大部分器件的开启电压在14～16V之间.在-1,0和+1g三种状态下对开启电压分别进行了测试,得到加速度计的灵敏度约为87mV/g.     

A high performance Σ-Δ readout circuitry for μg resolution microaccelerometers

This paper reports a second order electromechanical sigma-delta readout for micro-g resolution accelerometers in addition to other high-sensitivity capacitive microsensors with large base capacitance. The chip implements a switched-capacitor readout front-end and an oversampled sigma-delta modulator, and hence can be used for both open-loop analog readout and closed-loop control and readout with direct digital output. The readout circuit has more than 115 dB dynamic range and can resolve less than 3 aF/√Hz. Also this IC includes start-up circuit and feedback mechanism for closed-loop control of the accelerometer with a single 5 V supply in a ±4 g range. Together with the accelerometer, bandwidth of the overall system is limited with the sensor resonance frequency (1.53 kHz) in the open-loop mode. However in closed loop mode, oversampling of the acceleration data increases the bandwidth of the system up to few hundred kilohertz which is limited with the cut-off frequency of the low-pass filter placed at the output of the system. The start-up circuit allows rebalancing of a thick silicon proof mass with the limited 5 V supply after system start from power down or in the case of over-range input acceleration. The readout chip has been combined with a Silicon-On-Glass lateral accelerometer, which has a high sensitivity of 1.88 pF/g with large proof mass and long finger structures. A digital filtration and decimation circuitry is also implemented to signal process the output bit stream of the readout circuit. The complete module consumes 16 mW from a ±2.5 V supply and has an adjustable sensitivity up to 8 V/g with a noise level of 4.8 μg/√Hz in open-loop.     

Analysis and experimental evaluation of a new planar piezoelectricaccelerometer

The behavior of a new planar piezoelectric accelerometer is investigated, both theoretically and experimentally. The proposed accelerometer is composed of a piezoceramic ring filled, in its inner space, with a seismic mass. The theoretical analysis has been carried out by using a matrix model of the radial symmetric modes of the thin piezoceramic ring, proposed by the authors (1996). The numerical results obtained for the empty ring show that, with the response being constant, the bandwidth increases when the annulus radius increases. On the contrary, by inserting a high-density and stiffness seismic mass, both the response and the bandwidth increase by increasing the percent quantity of the seismic mass. The measurements of admittance and sensitivity, carried out on a test specimen, validate the computed results and demonstrate that the accelerometer is planar. Finally, an accelerometer composed of two of such elements, stacked and connected in parallel, has been realized     

UTC-PD和RTD单片集成的器件模拟研究

单行载流子光电二极管与共振隧穿二极管单片集成器件是一种新型高速光电探测器,也是高速光电单稳双稳转换逻辑电路的一个基本单元。用Atlas软件对该集成电路单元进行了直流和交流特性的模拟研究,模拟得到的3dB带宽最高可达9THz。模拟发现,光照强度、吸收层厚度、掺杂浓度、收集层浓度是影响器件3dB带宽的主要因素。研究了器件材料参数、结构参数与器件3dB带宽之间的关系,并得到在现行工艺下优化后的单行载流子光电二极管和共振隧穿二极管单片集成器件的工艺参数,模拟出3dB带宽为1.03THz。同时,对器件模拟和半导体工艺间的误差进行了分析和估计。这一工作为单行载流子光电二极管和共振隧穿二极管单片集成器件的设计和研制提供了工艺参数基础。     

The effect of porous structure of PMMA tunneling dielectric layer on the performance of nonvolatile floating-gate organic field-effect transistor memory devices

In this paper, we used the low and high density porous structure of polymethylmethacrylate (PMMA) film as tunneling dielectric layer in the floating-gate organic field-effect transistor (OFET) memory devices. Compared to the thin/thick nonporous structure of PMMA tunneling layer, the porous structure of PMMA tunneling layer had positive impacts on the device performance of the floating-gate OFET memory devices. Moreover, it was found that the memory performance was also increased as pore density of PMMA film increased. The atomic force microscopy (AFM) results of both porous structure of PMMA film and pentacene film on porous structure of PMMA film revealed that high density porous structure of PMMA tunneling layer can produce larger tunneling area and more electron transfer paths between pentacene film and PMMA film, which resulted in high electron capture and release efficiency of the floating-gate OFET memory devices with porous structure of PMMA tunneling layer. In addition, our porous structure of PMMA tunneling layer as well as nonporous PMMA film has high electrical insulating property due to their semi-hollow structure film, which is favourable to maintain stable retention property. Eventually, the floating-gate OFET memory devices with high density porous structure of PMMA tunneling layer showed good nonvolatile memory properties with a large memory window of about 43 V, a high ON/OFF current ratio of about 10⁴, and stable endurance and retention properties. Our results provided a new strategy to achieve the high performance floating-gate OFET memory devices.     

Laser beam backside probing of CMOS integrated circuits

We have developed a new, fully integrated circuit timing analysis tool that provides measurements of electrical waveforms by direct access to the diffusion nodes through the backside of CMOS integrated circuits. The system, known as the IDS 2000, allows the device to be driven at full speed by a wide variety of testers. Utilising an actively modelocked infrared laser beam, the system can detect waveforms with ultrahigh bandwidth ( 10 GHz) from CMOS devices using stroboscopic sampling. The system has proven to be an powerful tool for design debug and failure analysis of flip chip packaged IC as well as any other packaged IC where the silicon side can be thinned and directly accessed.     

叠加电桥检测的加速度传感器的设计

This paper describes the design,simulation,processing and test result of a high sensitivity accelerometer based on the piezoresistive effect which uses an overlay bridge detection method.The structure of this accelerometer is supersymmetric "mass-beams".This accelerometer has 8 beams,where two varistors are put in the two ends.Four varistors compose a Wheatstone bridge and the output voltages of the 4 Wheatstone bridges have been superimposed as the final output voltage.The sensitivity of the accelerometer can be improved effectively by these clever methods. A simplified mathematical model has been created to analyze the mechanical properties of the sensor,then the finite element modeling and simulation have been used to verify the feasibility of the accelerometer.The results show that the sensitivity of the accelerometer is 1.1381 m V/g,which is about four times larger than that of the single bridge accelerometers and series bridge sensor.The bandwidth is 0-1000 Hz which is equal to that of the single bridge accelerometers and the series bridge sensor.The comparison reveals that the new overlay detection bridge method can improve the sensitivity of the sensor in the same bandwidth.Meanwhile,this method provides an effective method to improve the sensitivity of piezoresistive sensors.     

带有静电自检测功能的高灵敏度加速度传感器

研究了一种带有自检功能的在平面内自限制压阻式加速度传感器．为实现该加速度传感器，提出了一套新的体硅微机械工艺，使用普通硅片取代SOI硅片来制作器件．传感器采用在深槽侧壁（悬臂梁弯曲的表面）制作压阻的方法，灵敏度比在硅表面上制作压阻的传统器件高近一倍．传感器利用集成在内的静电驱动器，实现电自检测功能．     

单轴硅微加速度传感器的原理与电路设计

单轴硅微加速度传感器将敏感部分与外围信号调理电路集成在一起，成为一个完整的加速度测量系统。系统除供电电源外不需要任何外加因素，能够实现电路的无触摸启动工作。敏感部分采用差动电容式结构具有高灵敏度、宽量程、较低的非线性误差、外围电路简单等优点。外围电路将敏感输出信号相位调制后，通过解调输出。解调电路采用开关电容(SC)的形式，通过负反馈系统反馈电荷影响采样一积分幅度的思路，设计电路对有效信息解调。本文介绍单轴硅微加速度计敏感部分的原理与外围调理电路的设计思路。     

Estimated acceleration feedback applied to a telescope servo system

Methods of increasing the bandwidth of a telescope servo system have been investigated. The results of this research, both via simulation and practical evaluation, have shown that the application of acceleration feedback can increase the position servo loop bandwidth by a factor of 4. Acceleration feedback has been applied successfully to the servo system of a real machine. This has been achieved both by the use of accelerometers and by software-based acceleration calculation and state estimation techniques. The performance of the software-based techniques matches that of the accelerometer if the sampling rate of the servo system is high enough.     

High performance torsional silicon accelerometer for automotive air bags

A high-sensitivity torsional silicon accelerometer for automotive air bag systems has been developed using wet etching of single crystal silicon and a silicon-glass bonding technique. The fabricated accelerometer yields a sensitivity of 100 mV/G, and a nonlinearity of 1.13% over a range of -22 G to 22 G. The minimum detectable acceleration measured by the readout electronics is 25 mG.     

Role of tunneling layer in graphene-oxide based organic nonvolatile memory transistors

This paper demonstrates non-volatile memory transistor using solution processable graphene oxide (GO) as charge storage nodes in the configuration, p⁺⁺Si/SiO₂/GO/Tunneling layer/Pentacene/Au. The tunneling layers are polymethylmethacrylate (PMMA) and polyvinylphenol (PVP). GO film could be deposited as single layered flakes with a uniform distribution using spin coating technique. The devices with PMMA as charge tunneling layer exhibited higher mobility and on/off ratio than PVP based devices. The devices show a large positive threshold voltage shift (∼24 V for PMMA and ∼15 V for PVP) from initial value during programming at gate voltage of +80 V kept for 10 s. The transfer curves can be restored approximately to its initial condition by applying an erasing voltage of −30 V for 10 s for both the devices. Since such a large shift is not observed without GO layer, we consider that memory effect was due to electron trapping in GO. Further, retention of the initial memory window was measured to be 63% and 37% after 3000 s for PMMA and PVP based devices, respectively.     

基于强度解调的低成本光纤悬臂式加速度计

该文研究了一种基于强度解调的低成本光纤悬臂式加速度计。该加速度计由接收光纤、发射光纤、陶瓷插芯和陶瓷套管组成,接收光纤和发射光纤均为单模光纤(SMF)。对该加速度计的灵敏度进行理论分析并制作了一个光学加速度计,搭建了实验系统。实验结果表明,在工作频带30~1 000 Hz,该加速度计具有71.5 mV/g(g=9.8 m/s²)的灵敏度和良好的相频特性。     

Voltage- and temperature-dependent gate capacitance and current model: application to ZrO/sub 2/ n-channel MOS capacitor

Based on the energy-dispersion relation in each region of the gate-dielectric-silicon system, a tunneling model is developed to understand the gate current as a function of voltage and temperature. The gate capacitance is self-consistently calculated from Schrodinger and Poisson equations subject to the Fermi-Dirac statistics, using the same band structure in the silicon as used for tunneling injection. Franz two-band dispersion is assumed in the dielectric bandgap. Using a Wentzel-Kramer-Brillouin (WKB)-based approach, direct and Fowler-Nordheim (FN) tunneling and thermionic emission are considered simultaneously. The model is implemented for both the silicon conduction and valence bands and both gate- and substrate-injected currents. ZrO/sub 2/ NMOSFETs were studied through temperature-dependent C/sub g/-V/sub g/ and I/sub g/-V, simulations. The extracted band gaps and band offsets of the ZrO/sub 2/- and interfacial-Zr-silicate-layer are found to be comparable with the reported values. The gate currents in ZrO/sub 2/-NMOSCAPs are found to be primarily contributed from the silicon conduction band and tunneling appears to be the most probable primary mechanism through the dielectric. Oscillations of gate currents and kinks of gate capacitance were observed near the flat-band in the experiments. These phenomena might be caused by the interface states.     

Extension of measurement bandwidth in an AMB-based gyroscopic sensor

A gyroscopic sensor using active magnetic bearing (AMB) is studied both theoretically and experimentally. The sensor has been proposed to realize high accuracy, compact and low-cost sensors, and it utilizes the control function of the AMB. The sensor works as a two-axis gyroscopic sensor and also as a three-axis servo-type accelerometer. Angular velocities and accelerations are measured based on the control signals for cancelling the inertial effects that act on the AMB rotor. The methods to detect the accelerations and angular velocities have been validated from several experimental results. In addition, it has been indicated that there is an upper limit in the measurement bandwidth of the sensor when the two-axis angular velocity is measured simultaneously. However, factors determining the limit have not been presented in a concrete manner. This paper discusses these factors and presents a methodology that can extend the measurement bandwidth of the sensor. The limiting factors are investigated extensively by analysis, numerical simulations and experiments with the AMB. The relationship between the measurement bandwidth and the control system is also investigated. In addition, the measurement range of the gyro is discussed.