新型宽带无线接入系统研发进展

宽带无线接入系统已经成为宽带接入和移动通信领域面向未来演化的主体方向之一，但在实际应用和产业推广过程中却遇到了很大困难，需要进一步定位宽带无线接入系统的典型服务模式，推动宽带无线接入关键技术的创新发展，促进宽带互联网络的骨干支撑作用。文章介绍一种宽带无线多媒体接入系统，尝试将地面数字电视系统与宽带无线接入系统结合在一起，以宽带互联网络为核心网平台，共同构建面向“三网融合”的新型宽带无线接入网络。初步研究结果表明，新型宽带无线接入系统可有效地缓解当前宽带无线接入系统所面临的尴尬局面，并在业务范畴、业务覆盖、频率规划、终端功耗和建网成本等多个方面取得较大竞争优势。     

宽带无线多媒体系统标准化的进展

介绍了正在制定中的宽带无线多媒体系统标准,尝试将地面数字电视系统与自主宽带无线接入系统结合在一起,以宽带互联网络为核心网平台,共同构建面向行业应用、支持三网融合的新型宽带无线网络.初步研究结果表明,宽带无线多媒体系统可有效地缓解当前宽带无线接入系统所面临的尴尬局面,并在业务范畴、业务覆盖、频率规划、终端功耗和建网成本等多个方面取得较大竞争优势.     

中国通信标准化协会简讯

"支持集群业务的SCDMA宽带无线接入系统"系列行业标准审查通过送审稿在无线通信技术工作委员会(TC5)宽带无线接入工作组(WG3)工作会议上,审查通过了"支持集群业务的SCDMA宽带无线接入系统"系列行业标准草案送审稿。支持集群业务的SCDMA宽带无线接入系统基于SCDMA宽带无线接入系统,继承了宽带SCDMA大信道容量、高频谱利用率、抗干扰能力强等诸多优点,可以满足     

高速铁路宽带无线接入系统架构与关键技术

本文阐述了高速铁路(以下简称高铁)宽带无线接入系统的需求,研究了高铁宽带无线接入系统的特点,分析了现有无线接入技术的优势与不足,探讨了一种新型的高铁宽带无线接入结构High Speed Mobile Cell(Himocell),最后讨论了高铁宽带无线接入中的几个关键技术。     

未来移动通信中的宽带接入技术

提供移动多媒体综合业务是未来移动通信发展的重要方向,宽带无线接入技术有力促进了这一目标的实现。该文分析了现有的若干接入方案,归纳出宽带无线接入的特点及影响其发展的几项关键技术。结合第三代乃至第四代移动通信系统对宽带业务的要求,指出宽带无线接入对未来通信系统的影响。     

宽带无线接入系统讲座第一讲绪论

首先介绍了宽带无线接入系统的产生发展情况。然后介绍了通信带宽可与光纤通信相比拟、采用蜂窝式的网络结构可使系统覆盖整个城域范围、能够提供多种业务、系统结构比较复杂及对性能要求高等特点，最后介绍了宽带无线接入的几种制式等。     

宽带城域网的无线接入

文章对城域网及宽带无线接入的基本概念作了介绍,对宽带无线接入的不同技术方式进行了分析和比较,讨论了本地多点分配业务系统和其它无线接入技术在宽带城域网应用中需要关注的关键问题——无线接入的网络管理、调制方式和接入协议,重点讨论了无线接入网的安全问题。     

3.5GHz宽带无线接入技术及其在中国的发展概况

本文从3．5GHz宽带无线接入的系统配置、频段选择、提供的业务、用户信息安全保证、3．5GHz宽带无线接入技术与LMDS接入技术比较与分析、3．5GHz宽带无线接入的地位、3．5GHz宽带无线接入在中国的招标概况、中国3．5G无线设备市场竞争格局等方面。详细地介绍了3．5GHz宽带无线接入技术及其在中国的发展概况。     

固定宽带无线接入技术及其标准的分析

在多种“最后一公里”宽带接入解决方案中,宽带无线接入技术以其经济和易于实施等优点越来越受到人们的关注。本地多点分配业务(LMDS)是一种新型的固定宽带无线接入技术。该技术提供双向语音、数据以及视频图像业务,能够实现2Mbit／s的用户接入速率,具有很高的可靠性。IEEE802委员会专门为固定宽带无线接入的无线接口制定了802．16d标准。本文介绍了802．16d的协议结构及各层功能,重点分析了802．16d的MAC层。     

WiMAX前景展望

随着移动通信和宽带业务的发展，一个新兴的宽带无线接人市场正在兴起。2．5G／3G手机移动数据业务和宽带无线接入是两个不同的市场。宽带无线接入是一个面向固定和移动通信融合的新市场，提供与宽带有线固定接入并行的宽带无线接入，支持游牧和移动应用。它与宽带固定接入使用共同的互联网核心网，应用业务支持AAA系统。它使得用户能够在任意时间和地点接入互联网，充分发挥互联网无所不在的特性。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.