离子束混合改善钢铁试样耐磨性能试验

在几种钢铁试样上进行了离子束混合改善耐磨性能的试验，发现一些试样的耐磨性能有大幅度提高（４－１５倍），通过Ｘ射线衍射分析，发现这些试样表现出现了新的化学成分Ｔｉ２Ｎ、ＴｉＮ、ＴｉＣ等。     

离子束增强沉积法制备Mo2N和Mo2-xTixN薄膜及其结构与性能研究

分别采用氮离子束增强沉积和Ｎ－Ｔｉ离子束同步增强沉积工艺制备了Ｍｏ２Ｎ和Ｍｏ２－ｘＴｉｘＮ薄膜,用ＸＲＤ,ＴＥＭ、划痕和阳极极化方法研究了两者的结构与性能。     

离子束混合形成氮化钛膜的摩擦和光学性能

用载能氮离子束轰击纯铁镀钛膜样品，成功地形成了金黄色氮化钛薄膜。结果表明：注入剂量为０．５×１０＾１７ Ｎ＾＋／ｃｍ＾２的混合样品表面颜色与纯金类似；氮离子束混合样品表面显微硬度及耐磨性都远优于纯铁基体，且随离子剂量的增加，混合样品的表面硬度和耐磨性也提高。     

离子注入与离子束混合两用机

早在1979年,为了解决应用于高温高真空环境下的轴承的自润滑问题,我们就着手采用     

离子束混合增强陶瓷基体上金属薄膜附着力的研究

研究了１１０ｋｅＶ Ｎ＾＋轰击Ｔｉ／Ｓｉ３Ｎ４和Ａｇ／Ａｌ２Ｏ３后界面间所发生的变化，结果表明，离子束混合技术在幅度提高了陶瓷基体上金属膜的附着力，在界面处发生了原子级混合，这为解释附着力的“增强效应”提供了科学依据；金属薄膜的沉积及后续的离子轰击明显地减少了陶瓷裂纹的形成。     

强脉冲离子束辐照混合的RBS研究

采用卢瑟福背散射(Rutherford backscattering spectroscopy,RBS)方法对强脉冲离子束辐照Ti/Al、Al/Ti和Ni/Ti三组薄膜/衬底体系所形成的混合层进行了研究.在Ni/Ti组合中形成了厚度比离子射程大得多的、混合度较高的梯度混合层.发现熔融态混合的程度不仅取决于两材料在熔融态的表面张力的差别,而且取决于它们熔点的差异.这两个参量较接近的混合程度较好.     

中国科学院物理研究所的离子束分析及离子注入改性研究

介绍了中国科学院物理研究所离子束研究室的主要设备、分析方法、离子注入材料改性研究以及近年来在半导体材料、高Ｔｃ超导材料、环保等领域中的研究工作。     

离子束混合提高耐热钢抗高温氧化性能研究

耐热钢4Cr9Si2试样上溅射沉积60nm左右的Si_3N_4或Si薄层,然后用120keV的N_2~+或Ar~+束轰击。氧化动力学曲线测量及扫描电镜观察表明,离子束混合使耐热钢的抗高温氧化性能有明显的提高。离子束混合同时也延长了汽车车灯玻璃耐热钢成型模具的使用寿命。并用TEM,AES,XPS及Monte-Carlo模拟法进行了分析。     

EXPERIMENTS OF MeV ION BEAM INDUCED ATOMIC MIXING

An experimental apparatus for studies of MeV ion beam modification of materials has been established on a 3 MV tandem accelerator at Fudan university. A system of X-Y electrostatic scanning implantation of MeV heavy ions and in situ Rutherford. backscattering analysis was included in it. The uniformity of scanning implantation was checked by the RBS measurement of a Si wafer implanted with 1 MeV Au ions. MeV ion beam mixing of Au/Si, Au/Ge and Ag/Si systems was preliminarily studied. The samples were irradiated by certain fluences of 1 MeV Ag ions at room temperature. The mixed layers were analyzed in situ using the glancing RBS technique with 2 MeV 4He+ ions. For Au/Si system, a uniformly mixed layer with a defined composition is obtained, and the intermixing is much less for Ag/Si system than for Au/Si system.     

COMPETING REACTIONS OF EXISTING Ni SILICIDE AND Ni OR Si INDUCED BY THERMAL ANNEALING AND MeV Si ION BEAM MIXING

The competing reactions between existing Ni silicides surrounded by Si and Ni were investigated by thermal annealing and MeV Si ion beam mixing. With high energy irradiation, the energy deposition at both interfaces, Ni/Ni silicide and Ni silicide/Si, is equal. Two MeV He~- RBS and TEM were used to obtain the reacted layer composition and epitaxial orientation, respectively. Also glancing angle Co K_a. X-ray diffraction was utilized to identify phase formation. The main results indicate that the existing silicides preferentially react with Ni layer, and that there are pronounced differences of Ni silicide phase transition between thermal annealing and MeV Si ion beam mixing, even though the mixing was performed in radiation enhanced diffusion regime. The results can be explained in term of the heat of silicide formation and surface energy change.     

离子注入对GCr15和Cr4Mo4V轴承材料的显微硬度及摩擦系数的影响

文章报导了经Cr,Mo,N,B离子注入后GCr15和Cr4 Mo4V二种轴承材料的显微硬度和摩擦系数的测试结果。测试结果发现经注入后材料表面的显微硬度提高,摩擦系数降低,经Cr+Mo+B和Cr+Mo+N注入试样的摩擦系数降为末注试样的1/3以下。     

纳秒级强脉冲电子束与Ar~＋离子束辐照作物种子后自由基产额的变化

应用多极板放电室产生的纳秒级强脉冲电子束与Ａｒ~＋离子束辐照蕃茄、黄瓜、辣椒和小麦的种子，分别测定辐照种子中的自由基产额，统计胚根根尖细胞中的染色体畸变频率和种子的萌发能力，藉以比较两种不同脉冲处理的辐照效果。实验发现：辐照处理时间的长短与自由基产额、染色体畸变率以及种子的萌发能力密切相关。辐照处理时间长，自由基产额高，染色体畸变率高，萌发生长能力低。四种作物种子的重复实验证明，电子脉冲的辐射效应明显强于Ａｒ~＋离子脉冲。     

Stability of nano-scaled Ta/Ti multilayers upon argon ion irradiation

The effects of argon ion irradiation on structural changes in Ta/Ti multilayers deposited on Si wafers were investigated. The starting structures consisted of sputter deposited 10 alternate Ta (∼23 nm) and Ti (∼17 nm) layers of a total thickness ∼200 nm. They were irradiated at room temperature with 200 keV Ar⁺, to the fluences from 5 × 10¹⁵ to 2 × 10¹⁶ ions/cm². The projected ion range was around mid-depth of the multilayered structure, and maximum displacements per atom ∼130. It was found that, despite of the relatively heavy ion irradiation, individual nanocrystalline Ta and Ti layers remain unmixed, keeping the same level of interface planarity. The changes observed in the mostly affected region are increase in lateral dimensions of crystal grains in individual layers, and incorporation of bubbles and defects that cause some stretching of the crystal lattice. Absence of interlayer mixing is assigned to Ta-Ti immiscibility (reaction enthalpy ΔH_f = +2 kJ/mol). It is estimated that up to ∼5 at.% interface mixing induced directly by collision cascades could be compensated by dynamic demixing due to chemical driving forces in the temperature relaxation regime. The results can be interesting towards developing radiation tolerant materials based on multilayered structures.     

PHASE ANALYSES FOR DUAL ION BEAM DEPOSITED ZrO2 FILMS ON NaCl SUBSTRATE

ZrO2 films on NaCl(100) substrate produced by oxygen ion bombardment and argon ion sputtering of Zr are analysed using TEM,XRD and XPS.The result of TEM shows that only cubic phase exists for the ZrO film produced by oxygen ion bombardment with 30μA/cm^2 and 200eV,while the XRD result shows that there seems to exhibit a smlaa quanitity of monoclinic phase apart from cubic one under the production condition of oxygen ion of 25μA/cm^2,100eV.     

300keV Xe~(2 )离子束诱导的金属/硅界面反应

采用RBS分析方法,研究了宽温区(LNT—400℃)下Xe~(2 )离子束诱导引起的金属/硅界面反应,得到多种硅化物单相或双相生长层,讨论了化学驱动力和辐射增强扩散效应。     

产生放射性核束的厚靶的物理设计

介绍用来产生放射性核束的厚靶的物理设计过程，提出对靶材料特性和温度条件的严格要求，列举了几种候选靶材，设计了１个石墨靶衬并合理安排靶的水冷散热结构，计算了厚靶的三维温度分布情况。计算结果表明：此厚靶完全能够承受最高达１４ｋＷ的质子束入射束流功率，靶的温度可以根据不同要求控制在１３００—２０００℃。     

8.0nm X射线激光反射镜Mo/B4C多层膜制备及其特性

用磁控溅射法制备工作波长约８０ ｎｍ 的 Ｍｏ／ Ｂ４ Ｃ多层膜作为正入射短波长（λ＜ １０．０ ｎｍ ）软 Ｘ 射线激光反射腔的反射镜。经 Ｘ 射线衍射仪和 Ｔ Ｅ Ｍ 检测,多层膜周期结构准确,热稳定性高。     

重离子射线照射后家蚕胚胎造血器官的修复再生

为了研究重离子射线照射后家蚕造血器官的修复再生作用，用碳离子射线局部照射家蚕接近孵化时紧贴翅原基内侧的胚胎造血器官，局部细微手术损伤造血器官，观察了对幼虫造血功能的影响，了解了造血器官的修复程度。100Gy以上剂量照射，家蚕出现变态困难，幼虫和蛹的生存率下降，眠中、化蛹或羽化时期出现死亡个体等缺血生理障碍，其影响程度随射线剂量增加而加重。200Gy照射组5龄存活幼虫血细胞含量下降，但其中部分个体的血细胞含量接近对照未照射处理，其体内出现了再生的造血器官。家蚕幼虫有很强的修复再生造血器官功能。