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1.
Epitaxial evolution on buried cracks in a strain-controlled AlN/GaN superlattice interlayer between AlGaN/GaN multiple quantum wells and a GaN template 下载免费PDF全文
Epitaxial evolution of buried cracks in a strain-controlled AlN/GaN superlattice interlayer(IL) grown on GaN template, resulting in crack-free AlGaN/GaN multiple quantum wells(MQW), was investigated. The processes of filling the buried cracks include crack formation in the IL, coalescence from both side walls of the crack, build-up of an MQW-layer hump above the cracks, lateral expansion and merging with the surrounding MQW, and two-dimensional step flow growth.It was confirmed that the filling content in the buried cracks is pure GaN, originating from the deposition of the GaN thin layer directly after the IL. Migration of Ga adatoms into the cracks plays a key role in the filling the buried cracks. 相似文献
2.
Effects of donor density and temperature on electron systems in AlGaN/AlN/GaN and AlGaN/GaN structures 下载免费PDF全文
It was reported by Shen et al that the
two-dimensional electron gas (2DEG) in an AlGaN/AlN/GaN structure showed high
density and improved mobility compared with an AlGaN/GaN structure, but the
potential of the AlGaN/AlN/GaN structure needs further exploration. By the
self-consistent solving of one-dimensional Schr\"{o}dinger--Poisson
equations, theoretical investigation is carried out about the effects of
donor density (0--1\times 1019cm-3 and temperature
(50--500K) on the electron systems in the AlGaN/AlN/GaN and AlGaN/GaN
structures. It is found that in the former structure, since the effective
\Delta Ec is larger, the efficiency with which the 2DEG absorbs the
electrons originating
from donor ionization is higher, the resistance to parallel conduction is
stronger, and the deterioration of 2DEG mobility is slower as the donor
density rises. When temperature rises, the three-dimensional properties of
the whole electron system become prominent for both of the structures, but the
stability of 2DEG is higher in the former structure, which is also ascribed
to the larger effective \Delta Ec. The Capacitance--Voltage
(C-V) carrier density
profiles at different temperatures are measured for two Schottky diodes on
the considered heterostructure samples separately, showing obviously
different 2DEG densities. And the temperature-dependent tendency of the
experimental curves agrees well with our calculations. 相似文献
3.
Breakdown characteristics of AlGaN/GaN Schottky barrier diodes fabricated on a silicon substrate 下载免费PDF全文
In this work, the breakdown characteristics of AlGaN/GaN planar Schottky barrier diodes(SBDs) fabricated on the silicon substrate are investigated. The breakdown voltage(BV) of the SBDs first increases as a function of the anodeto-cathode distance and then tends to saturate at larger inter-electrode spacing. The saturation behavior of the BV is likely caused by the vertical breakdown through the intrinsic GaN buffer layer on silicon, which is supported by the postbreakdown primary leakage path analysis with the emission microscopy. Surface passivation and field plate termination are found effective to suppress the leakage current and enhance the BV of the SBDs. A high BV of 601 V is obtained with a low on-resistance of 3.15 mΩ·cm2. 相似文献
4.
In this paper, a new current expression based on both the direct currect(DC) characteristics of the AlGaN/GaN high election mobility transistor(HEMT) and the hyperbolic tangent function tanh is proposed, by which we can describe the kink effect of the AlGaN/GaN HEMT well. Then, an improved EEHEMT model including the proposed current expression is presented. The simulated and measured results of I–V, S-parameter, and radio frequency(RF) large-signal characteristics are compared for a self-developed on-wafer AlGaN/GaN HEMT with ten gate fingers each being 0.4-μm long and 125-μm wide(Such an AlGaN/GaN HEMT is denoted as AlGaN/GaN HEMT(10 × 125 μm)). The improved large signal model simulates the I–V characteristic much more accurately than the original one, and its transconductance and RF characteristics are also in excellent agreement with the measured data. 相似文献
5.
AlGaN/GaN high-electron-mobility transistors (HEMTs) with Al-doped ZnO (AZO) transparent gate electrodes are fabricated, and Ni/Au/Ni-gated HEMTs are produced in comparison. The AZO-gated HEMTs show good DC characteristics and Schottky rectifying characteristics, and the gate electrodes achieve excellent transparencies. Compared with Ni/Au/Ni-gated HEMTs, AZO-gated HEMTs show a low saturation current, high threshold voltage, high Schottky barrier height, and low gate reverse leakage current. Due to the higher gate resistivity, AZO-gated HEMTs exhibit a current-gain cutoff frequency (fT) of 10 GHz and a power gain cutoff frequency (fmax) of 5 GHz, and lower maximum oscillation frequency than Ni/Au/Ni-gated HEMTs. Moreover, the C-V characteristics are measured and the gate interface characteristics of the AZO-gated devices are investigated by a C-V dual sweep. 相似文献
6.
Determination of the relative permittivity of the AlGaN barrier layer in strained AlGaN/GaN heterostructures 下载免费PDF全文
Using the measured capacitance--voltage curves and the photocurrent
spectrum obtained from the Ni Schottky contact on a strained
Al_0.3Ga_0.7N/GaN heterostructure, the value of the relative
permittivity of the AlGaN barrier layer was analysed and calculated
by self-consistently solving Schr?dinger's and Poisson's
equations. It is shown that the calculated values of the relative
permittivity are different from those formerly reported, and reverse
biasing the Ni Schottky contact has an influence on the value of the
relative permittivity. As the reverse bias increases from 0 V to
--3~V, the value of the relative permittivity decreases from 7.184
to 7.093. 相似文献
7.
Different influences of u-InGaN upper waveguide on the performance of GaN-based blue and green laser diodes 下载免费PDF全文
Performances of blue and green laser diodes(LDs) with different u-InGaN upper waveguides(UWGs) are investigated theoretically by using LASTIP. It is found that the slope efficiency(SE) of blue LD decreases due to great optical loss when the indium content of u-InGaN UWG is more than 0.02, although its leakage current decreases obviously. Meanwhile the SE of the green LD increases when the indium content of u-InGaN UWG is varied from 0 to 0.05, which is attributed to the reduction of leakage current and the small increase of optical loss. Therefore, a new blue LD structure with In_(0.05) Ga_(0.95)N lower waveguide(LWG) is designed to reduce the optical loss, and its slope efficiency is improved significantly. 相似文献
8.
Determination of the series resistance under the Schottky contacts of AlGaN/AlN/GaN Schottky barrier diodes 下载免费PDF全文
Rectangular AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs) were fabricated,and the gate and the source of the HFETs consisted of AlGaN/AlN/GaN Schottky barrier diodes (SBDs).Based on the measured forward current-voltage and the capacitance-voltage characteristics of the AlGaN/AlN/GaN SBDs,the series resistance under the Schottky contacts (RS) was calculated using the method of power consumption,which has been proved to be valid.Finally,the method of power consumption for calculating R S was successfully used to study the two-dimensional electron gas electron mobility for a series of circular AlGaN/AlN/GaN SBDs.It is shown that the series resistance under the Schottky contacts cannot be neglected and is important for analysing and characterizing the AlGaN/AlN/GaN SBDs and the AlGaN/AlN/GaN HFETs. 相似文献
9.
10.
A. Asgari M. Kalafi L. Faraone 《Physica E: Low-dimensional Systems and Nanostructures》2005,25(4):431-437
In this paper we present a study of the effect of GaN capping layer thickness on the two-dimensional (2D)-electron mobility and the two-dimensional electron gas (2DEG) sheet density which is formed near the AlGaN barrier/buffer GaN layer. This study is undertaken using a fully numerical calculation for GaN/AlxGa1−xN/GaN heterostructures with different Al mole fraction in the AlxGa1−xN barrier, and for various values of barrier layer thickness. The results of our analysis clearly indicate that increasing the GaN capping layer thickness leads to a decrease in the 2DEG density. Furthermore, it is found that the room-temperature 2D-electron mobility reaches a maximum value of approximately 1.8×103 cm2 /Vs−1 for GaN capping layer thickness grater than 100 Å with an Al0.32Ga0.68N barrier layer of 200 Å thick. In contrast, for same structure, the 2DEG density decreases monotonically with GaN capping layer thickness, and eventually saturates at approximately 6×1012 cm−2 for capping layer thickness greater than 500 Å. A comparison between our calculated results with published experimental data is shown to be in good agreement for GaN capping layers up to 500 Å thickness. 相似文献
11.
在不同的漏偏压下,研究了钝化和不同场板尺寸AlGaN/GaN HEMT对电流崩塌的抑制能力.实验结果表明,钝化器件对电流崩塌的抑制能力随着漏偏压的升高而显著下降;在高漏偏压下,场板的尺寸对器件抑制崩塌的能力有较大影响,而合适尺寸的场板结构在各个漏偏压下都能够很好的抑制电流崩塌.深入分析发现,场板结构不仅能够抑制虚栅的充电过程,而且提供了放电途径,有利于虚栅的放电,从而抑制电流崩塌.在此基础上,通过建立场板介质对虚栅放电的模型,解释了高漏偏压下场板的尺寸对器件抑制崩塌的能力有较大影响的原因.
关键词:
AlGaN/GaN HEMT
场板
电流崩塌 相似文献
12.
在不同的漏偏压下,研究了钝化和不同场板尺寸AlGaN/GaN HEMT对电流崩塌的抑制能力.实验结果表明,钝化器件对电流崩塌的抑制能力随着漏偏压的升高而显著下降;在高漏偏压下,场板的尺寸对器件抑制崩塌的能力有较大影响,而合适尺寸的场板结构在各个漏偏压下都能够很好的抑制电流崩塌.深入分析发现,场板结构不仅能够抑制虚栅的充电过程,而且提供了放电途径,有利于虚栅的放电,从而抑制电流崩塌.在此基础上,通过建立场板介质对虚栅放电的模型,解释了高漏偏压下场板的尺寸对器件抑制崩塌的能力有较大影响的原因. 相似文献
13.
Determination of the series resistance under the Schottky contacts of AlGaN/AlN/GaN Schottky barrier diodes 下载免费PDF全文
Rectangular AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs) were fabricated, and the gate and the source of the HFETs consisted of AlGaN/AlN/GaN Schottky barrier diodes (SBDs). Based on the measured forward current-voltage and the capacitance-voltage characteristics of the AlGaN/AlN/GaN SBDs, the series resistance under the Schottky contacts (RS) was calculated using the method of power consumption, which has been proved to be valid. Finally, the method of power consumption for calculating RS was successfully used to study the two-dimensional electron gas electron mobility for a series of circular AlGaN/AlN/GaN SBDs. It is shown that the series resistance under the Schottky contacts cannot be neglected and is important for analysing and characterizing the AlGaN/AlN/GaN SBDs and the AlGaN/AlN/GaN HFETs. 相似文献
14.
LI Na ZHAO Degang & YANG Hui State Key Laboratory on Integrated Optoelectronics Institute of Semiconductors Chinese Academy of Sciences Beijing China 《中国科学G辑(英文版)》2004,47(6):694-701
Because of their large band-gap, large high-field electron velocity, large breakdownfield, and large thermal conductivity, GaN and its heterojunction with AlGaN and InGaNhave foreseeable potential in the applications of high-power/temperature electronics, andoptoelectronic devices operative in UV and visible wavelength. Polarization inducedelectric field can reach the magnitude of ~MV/cm[1,2]. For AlGaN/GaN based FETs theconcentration of sheet carrier induced by polarization in the cha… 相似文献
15.
The effect of the indium (In) composition of InxGa1−xN (GaN) waveguide layers on the performance of deep violet In0.082Ga0.918N/GaN double quantum well (DQW) laser diodes (LDs) emitting at 390 nm output emission wavelength has been numerically investigated. Simulation results indicated that by increasing In composition of the InxGa1−xN waveguide layers, the threshold current decreases, the slope efficiency, and differential quantum efficiency (DQE) increase, whereas the output power decreases. The increase in the In composition of the InGaN waveguide layers increases the refractive index and consequently increases the optical confinement factor (OCF) which result in the increase in the slope efficiency and DQE and the decrease in the threshold current. The decreasing movement of electron and hole carriers from the bulk waveguide layers to the active regions also causes to decrease the output power. A new LD structure with InGaN/GaN superlattice (SL) waveguide layers has been proposed to exploit the increased OCF of InGaN waveguide structures, and the enhanced electron and hole mobilities and the tunneling effect of the periodic structure of the SL structures. The results also showed that the use of InGaN/GaN SL waveguide structures effectively improves the output power, slope efficiency and DQE and decreases the threshold current of the LD compared with (In)GaN bulk waveguide structure. 相似文献
16.
《Current Applied Physics》2015,15(11):1478-1481
The internal field of GaN/AlGaN/GaN heterostructure on Si-substrate was investigated by varying the thickness of an undoped-GaN capping layer using electroreflectance spectroscopy. The four samples investigated are AlGaN/GaN heterostructure without a GaN cap layer (reference sample) and three other samples with GaN/AlGaN/GaN heterostructures in which the different thickness of GaN cap layer (2.7 nm, 7.5 nm, and 12.4 nm) has been considered. The sheet carrier density (ns) of a two-dimensional electron gas has decreased significantly from 4.66 × 1012 cm−2 to 2.15 × 1012 cm−2 upon deposition of a GaN capping layer (12.4 nm) over the reference structure. Through the analysis of internal fields in each GaN capping and AlGaN barrier layers, it has been concluded that the undiminished surface donor states (ns) of a reference structure and the reduced ns caused by the Au gate metal are approximately 5.66 × 1012 cm−2 and 1.08 × 1012 cm−2, respectively. 相似文献
17.
AlGaN/GaN MIS-HEMTs with adjusted VT were fabricated using a recess gate to investigate the effect on actual operation when the polarity of the gate voltage is opposite in the on- and off-state. The direction and time exponents of VT shift depend on the polarity of the gate bias stress. Electrons detrapping from the Al2O3/AlGaN interface trap site to AlGaN under negative gate bias stress has to overcome the energy barrier, resulting in a higher temperature dependence. In addition, the unaffected gm and SS show that the degradation occurred primarily at the Al2O3/AlGaN interface rather than channel or mobility degradation. For unipolar and bipolar AC stresses, the time exponent of the VT shift during stress time has two values, and a relatively low value during relaxation after bipolar AC stress. These results may be due to the further degradation by Vmin at the broader energy levels of the Al2O3/AlGaN interface. 相似文献
18.
19.
In this paper, a high performance AlGaN/AlN/GaN/SiC High Electron Mobility Transistor (HEMT) with the multiple indented channel (MIC-HEMT) is proposed. The main focus of the proposed structure is based on reduction of the space around the gate, stop of the spread of the depletion region around the source–drain, and decrement of the thickness of the channel between the gate and drain. Therefore, the breakdown voltage increases, meanwhile the elimination of the gate depletion layer extension to source/drain decreases the gate–source and gate–drain capacitances. The optimized results reveal that the breakdown voltage and the drain saturation current increase about 178% and 46% compared with a conventional HEMT (C-HEMT), respectively. Therefore, the maximum output power density is improved by factor 4.1 in comparison with conventional one. Also, the cut-off frequency of 25.2 GHz and the maximum oscillation frequency of 92.1 GHz for the MIC-HEMT are obtained compared to 13 GHz and 43 GHz for that of the C-HEMT and the minimum figure noise decreased consequently of reducing the gate–drain and gate–source capacitances by about 42% and 40%, respectively. The proposed MIC-HEMT shows a maximum stable gain (MSG) exceeding 24.1 dB at 3.1 GHz which the greatest gain is yet reported for HEMTs, showing the potential of this device for high power RF applications. 相似文献
20.
Monolithic integration of AlGaN/GaN metal—insulator field-effect transistor with ultra-low voltage-drop diode for self-protection 下载免费PDF全文
In this paper, we present a monolithic integration of self-protected AlGaN/GaN metal-insulator field-effect transistor (MISFET). An integrated field-controlled diode on the drain side of the AlGaN/GaN MISFET features self-protected function at reverse bias. This diode takes advantage of the recessed-barrier enhancement-mode technique to realize an ultra-low voltage drop and a low turn-ON voltage. In the smart monolithic integration, this integrated diode can block reverse bias (>70 V/μm) and suppress the leakage current (<5×10-11 A/mm). Compared with conventional monolithic integration, the numerical results show that the MISFET integrated with a field-controlled diode leads to a good performance for smart power integration. And the power loss is lower than 50% in conduction without forward current degeneration. 相似文献