一种用叠层式降压型压电变压器的高频开关电源

介绍一种叠层式压电陶瓷降压型变压器的基本结构，工作原理，等效电路以及实验测度与等效计算的结果，介绍这种压电变压器用于高频开关电源产品的工作状态测试结果；叠层式降压型压电陶瓷变压器用于高频电源的优点及宽广的应用领域。     

液晶显示背景光源新宠压电陶瓷变压器应用升温

近年来,由于笔记本、个人计算机市场的不断扩大,导致以往采用电磁变压器的背景灯小型化、薄型化以及高效率化等相当困难,而目前对此类的需求却日益增加,同时,由于压电元器件材料的高功率特性的改善,致使可作为小型高压生成元件的压电变压器重新受到重视.本文主要针对压电陶瓷变压器在开关电源逆变器上的应用进行阐述.     

低温烧结多层叠片式压电陶瓷变压器

介绍了普通压电陶瓷变压器的结构和工作原理，分析了低温烧结PZT压电陶瓷材料的配制及其主要性能，以及如何利用其来实现低温烧结型多层叠片压电陶瓷变压器，最后对低温烧结型多层叠片压电陶瓷变压器的主要应用、空载和负载特性进行了讨论。     

液晶显示器背光源驱动优化的探讨

探讨了液晶显示器背光源驱动的优化,分析了冷阴极荧光灯的特性和对驱动的要求。介绍了压电陶瓷变压器,并对LCD背光源中的电磁变压器和压电陶瓷变压器的差异做了比较。最后讨论了在LCD背光源中用压电陶瓷变压器替代传统电磁变压器的可行性。     

压电陶瓷变压器技术研究与发展现状

压电陶瓷变压器是一种体积小、重量轻、效率高、无电磁干扰、不怕燃烧、结构简单、制作简便、易批量生产、不用磁芯的新型电子器件。文中对目前压电陶瓷变压器的主要形式及工作原理作了较为详尽的分析和阐述,并对压电变压器的应用现状作了介绍,提出了压电变压器今后发展中需要解决的几个问题。     

雷达CRT显示器中高压变压器的可靠性分析

介绍雷达CRT显示器压电陶瓷变压器高压电源的基本结构和工作原理;从压电陶瓷变压器基本特性入手,分析压电陶瓷变压器高压电源的环境适应性及电磁兼容性,表明它能满足雷达可靠性要求.     

一种新型阶梯盘形压电陶瓷变压器

提出并研究了一种新型阶梯盘形压电陶瓷变压器,与传统的点环形盘形压电陶瓷变压器相比,原来整个压电陶瓷圆盘由不同厚度的压电陶瓷内盘和外环所代替。论文应用压电方程并结合相关弹性理论对厚度极化的压电陶瓷圆盘和圆环的径向振动进行分析,并利用解析法获得了新型变压器径向振动的机电等效电路。在此基础上,得出了新型变压器的输入阻抗、共振频率、反共振频率、电压增益和功率效率的解析解;将计算所得共振频率、反共振频率与ANSYS模拟结果进行比较验证,模拟结果和理论计算值相吻合;且分析探讨了新型压电变压器的几何尺寸对最大电压增益和其对应的频率的影响。     

多层压电陶瓷变压器振动模态分析与测量

介绍了多层压电陶瓷变压器振动的原理,利用有限元分析研究了多层压电陶瓷变压器的振动模态,并利用激光多普勒干涉仪测量了多层压电陶瓷变压器在不同输入电压下两种谐振状态下沿长度方向的位移振幅。实验表明：谐振频率的测量值和有限元计算结果相符;谐振状态下压电陶瓷变压器长度方向的振幅与输入电压的关系是在输入电压较小时,基本上是线性变化的,并且逐渐趋于饱和,输入端振幅略大于输出端。     

压电陶瓷变压器在静电复印机上的应用研究

针对静电复印机高压电源中升压电磁变压器线匝之间易打火、击穿、故障率高问题,采用PMMN陶瓷材料制备出片式结构的压电陶瓷变压器,又以压电陶瓷变压器为升压器件研制出符合静电复印机技术要求的压电陶瓷变压器高压电源,从根本上解决了传统高压电源存在的问题,这种电源还具有体积小、质量轻、不怕短路、工作效率高等特点。     

再谈压电陶瓷变压器

本刊2000年第9期刊出《压电陶瓷变压器》以来,不断收到读者的来信,要求提供更详细的资料。现请该文作者介绍有关压电陶瓷变压器的详细资料。     

采用高性能谐振控制器的12kW雷达电源

伴随着变换器型电源技术的飞速发展，各种集成化电源专用控制电路也不断推出。本文介绍了MC33066高性能谐振控制器原理及其在大功率雷达发射机逆变电源中的应用，探讨了工程实践中应注意的问题和采取的措施。     

Piezoelectric micro-power generation interface circuits

New power conversion circuits to interface to a piezoelectric micro-power generator have been fabricated and tested. Circuit designs and measurement results are presented for a half-wave synchronous rectifier with voltage doubler, a full-wave synchronous rectifier and a passive full-wave rectifier circuit connected to the piezoelectric micro-power generator. The measured power efficiency of the synchronous rectifier and voltage doubler circuit fabricated in a 0.35-/spl mu/m CMOS process is 88% and the output power exceeds 2.5 /spl mu/W with a 100-k/spl Omega/, 100-nF load. The two full-wave rectifiers (passive and synchronous) were fabricated in a 0.25-/spl mu/m CMOS process. The measured peak power efficiency for the passive full-wave rectifier circuit is 66% with a 220-k/spl Omega/ load and supplies a peak output power of 16 /spl mu/W with a 68-k/spl Omega/ load. Although the active full-wave synchronous rectifier requires quiescent current for operation, it has a higher peak efficiency of 86% with an 82-k/spl Omega/ load, and also exhibits a higher peak power of 22 /spl mu/W with a 68-k/spl Omega/ load which is 37% higher than the passive full-wave rectifier.     

一种压电陶瓷微位移器驱动电源研究

在研究压电陶瓷微位移器的基础上,针对压电陶瓷的驱动特点和要求,设计了一种驱动电源。以单片机Atmega128和高压运算放大器PA78为核心器件,以及相关电路构成电压控制型驱动电源。介绍了主要模块电路的功能和实现,并对驱动电源进行测试实验。驱动电源可输出0~300 V连续电压,分辨率可达10 mV、静态纹波＜5 mV。结果表明该电源具有线性度高、稳定性好、分辨率高等优点。     

A family of converters for UPS production burn-in energy recovery

This paper introduces a family of power converters for power recycling during the burn-in test of synchronized uninterruptible power supplies (UPSs) with sinusoidal output voltage. The use of the power recycler to replace the resistor load bank in the UPSs burn-in test causes great energy savings, and the optimized use of electrical energy contributes in reducing the final cost of the product. The main feature of the new circuits is their ability to draw from the UPS and to inject into the utility-grid currents with low total harmonic distortion (THD) and high power factor (PF). The new circuits operate at constant frequency and are regulated by conventional pulse width modulation (PWM) using dedicated PWM and PF controller integrated circuits developed for power supplies. Circuit operation, mathematical analysis, design example, and experimental results for discontinuous current mode (DCM) and continuous current mode (CCM) operation are provided in this paper     

Low-power CMOS digital design with dual embedded adaptive powersupplies

A low-power CMOS design methodology with dual embedded adaptive power supplies is presented. A variable supply-voltage scheme for dual power supplies, namely, the dual-VS scheme, is presented. It is found that the lower supply voltage should be set at 0.7 of the higher supply voltage to minimize chip power dissipation. This knowledge aids designers in the decision of the optimal supply voltages within a restricted design time. An MEPG-4 video codec chip is designed at 2.5 and 1.75 V for internal circuits that are generated from an external power supply of 3.3 V by the dual-VS circuits. Power dissipation is reduced by 57% without degrading circuit performance compared to a conventional CMOS design     

多单元压电陶瓷类变形镜高压驱动电源

针对变形镜压电陶瓷类驱动器单元数多的特点,设计一种高带宽适合扩展成多通道输出的压电陶瓷驱动电源,它利用光耦分相隔离从源极驱动功率NMOS管,简化了电路结构并保证了功率带宽。该驱动电源驱动100 nF容性负载时,可实现单端到地-300~＋300 V双极性高压输出,电压增益35.5 dB,信号不失真情况下,小信号响应频率达10 kHz,大信号响应频率2 kHz,瞬时充放电电流可达400 mA。实验表明该驱动电源的性能能够满足变形镜驱动的要求且电路结构简单。     

中性束诊断系统中高压电源的保护分析

介绍了DNB中所必需的电源系统，着重介绍了加速极电源的结构、功能及工作原理，设计了相应的保护电路。仿真和实验结果表明它们对系统的安全运行提供了可靠的保障。     

Low-power CMOS/BiCMOS drivers and receivers for on-chipinterconnects

Novel low-voltage swing CMOS and BiCMOS driver/receiver circuits for low-power VLSI applications are proposed. Interconnect wire drivers with low output signal swing are employed. Special receivers provide single and double level conversion while minimizing the total driver/receiver transmission delay. These level converters have no DC power dissipation. At 3.3 V power supply voltage, the proposed circuits consume less power without delay penalty. The power saving is observed to be as high as 30%. At lower supplies further power and delay improvements are observed     

开关电源的噪声干扰及其抑制方法的分析

本文介绍了开关电源中噪声干扰产生的主要原因,及其相应的抑制方法.通过对实际线路的分析,给出了相关元器件的取值或计算方法.     

Power integrated circuits—A brief overview

A brief overview of developments in power and high-voltage integrated circuits is presented. The technology can be classified into two types: 1) smart power devices that contain one or more common drain, vertical power transistors with control, and protective circuitry built on the same chip, and 2) high-voltage integrated circuits that combine lateral high-voltage with CMOS logic and analog bipolar circuits on the same chip. These technologies are being aimed at display drivers, telecommunications, motor drives, power supplies, and automotive electronics. A rapid growth in their application in the future can be expected.