Development and evaluation of a GaAs MMIC phase-locked loop chipset for space applications

GaAs monolithic microwave integrated circuit (MMIC) chips designed for a phase-locked loop frequency source to be used in space applications have been developed. The chip set includes a three-stage resistive feedback amplifier with 13-dB gain in a 275 MHz to 5.85 GHz bandwidth, a 2.0-GHz voltage-controlled oscillator, a 2.8-GHz digital prescaler, and a VHF/UHF digital phase/frequency discriminator. Both analog and buffered-FET logic digital circuits were fabricated on the same wafer. The MMIC process which was developed for this application comprises molecular beam epitaxial deposition of the active layer, proton isolation, submicron gates, thin film TaN resistor deposition, and silicon nitride passivation. The chip set was used successfully to implement a 2.0 GHz all-GaAs phase-locked loop     

Study on the effects of wafer thinning and dicing on chip strength

Die cracking is an annoying problem in the packaging industry. In this paper, we identified the weak regions, in terms of mechanical strength, in chips in a semiconductor wafer using the three-point bending test. The weak regions were observed in two sectors approximately 45/spl deg/ wide, axisymmetric to the wafer center. The strength of the chips within these weak regions was about 30%-35% lower than the average chip strength of the whole wafer. The existence of these weak regions was related to spiral grinding marks, which, in turn, were formed by backside mechanical grinding. The probability distributions of the chip strength and the chip fragmentary pattern confirmed this relationship. When wafers were mechanically ground until they were 50-/spl mu/m thick, chip warpage was found to be oriented to the direction of the grinding marks. Meanwhile, by slowing the mechanical grinding speed by 50%, we were able to increase the average chip strength by 56%. Either plasma etching or polishing after mechanical grinding eliminated the weak regions, and the optimal amount of mechanical grinding and the polishing depths were observed, beyond which the chip strength would not increase. On the other hand, a preprocess for blunting a new saw blade for chip dicing was found to be essential as the chip strength increased five-fold, whereas increasing the dicing speed or using dual saw instead of a single saw had only small effects on the chip strength degradation.     

A 77-GHz MMIC power amplifier for automotive radar applications

A MMIC 77-GHz two-stage power amplifier (PA) is reported in this letter. This MMIC chip demonstrated a measured small signal gain of over 10 dB from 75 GHz to 80 GHz with 18.5-dBm output power at 1 dB compression. The maximum small signal gain is above 12 dB from 77 to 78 GHz. The saturated output power is better than 21.5 dBm and the maximum power added efficiency is 10% between 75 GHz and 78 GHz. This chip is fabricated using 0.1-/spl mu/m AlGaAs/InGaAs/GaAs PHEMT MMIC process on 4-mil GaAs substrate. The output power performance is the highest among the reported 4-mil MMIC GaAs HEMT PAs at this frequency and therefore it is suitable for the 77-GHz automotive radar systems and related transmitter applications in W-band.     

圆片等离子划片工艺及其优势

等离子划片是近年来兴起的一项新型圆片划片工艺。与传统的刀片划片、激光划片等工艺不同,该工艺技术可以同步完成一张圆片上所有芯片的划片,生产效率明显提升,是对现有划片工艺的一个颠覆。介绍了圆片划片工艺的工作原理、技术特点及其优势,并对其在解决圆片划片应用中的典型问题和不足之处进行了讨论。     

S波段单片低噪声放大器与混频器

南京电子器件研究所最近利用76mmGaAsMMIC工艺线研制出数种单片电路。封面照片为S波段低噪声放大器与混频器单胞及大圆片照片，初步微波性能如下：放大器：增益＞22dB；噪声系数＜1．5dB；输入输出驻波＜1．5混频器：变频增益＞4dB；各端口驻波＜1．5；各端口隔离度＞24dB电源：±5VS波段单片低噪声放大器与混频器     

紧凑型Ka波段PHEMT微波单片集成VCO

设计并流片制作了基于GaAs PHEMT工艺的Ka波段微波单片集成压控振荡器(MMIC VCO).该VCO具有紧凑、宽电调谐带宽及高输出功率的特点.提出了缩小芯片面积及增大调谐带宽的方法,同时还给出了设计MMIC VCO的基本步骤.该方法设计并流片制做的MMIC VCO的测量结果为:振荡频率为36±1.2GHz,输出功率为10士1dBm,芯片面积为1.3mm×1.0mm.     

GaAsMMIC双栅MESFET混频器设计与实验研究

对微波单片集成 (简称 MMIC)双栅 MESFET混频器的设计理论和工艺技术进行较为细致的研究。根据双栅 MESFET的理论分析与实验结果 ,建立了一种栅压调制 I- V特性的经验模型 ,推导了双栅 FET混频器变频增益公式。分析了栅压对改变非线性跨导在混频器中的作用。最后设计并加工出了芯片面积为 0 .75 mm× 1 .5 mm Ga As MMIC双栅 FET混频器。     

A small chip size 2 W, 62% efficient HBT MMIC for 3 V PCNapplications

This work describes the L-band low voltage (⩾1.6 V) power performance of AlGAs/GaAs heterojunction bipolar transistors (HBTs), their modeling and the design of a 2-W monolithic microwave integrated circuit (MMIC) for 3-V wireless mobile PCN applications (1800 MHz). The two-stage MMIC achieves 62% power-added efficiency (PAE) and 33 dB of linear gain, at a very small chip size of 1.2 mm². To our knowledge this is the best combination of power performance data for wireless applications demonstrated so far for a MMIC. The chip size is about a factor of four smaller than comparable MMIC's known before. The MMIC offers the potential both for low cost production due to small chip size, single voltage supply, and high performance at the same time     

SiC晶圆背面激光退火工艺研究

降低芯片背面金属-半导体欧姆接触电阻是有效提高器件性能的方式之一。采用650 V SiC肖特基势垒二极管(SBD)工艺,使用波长355 nm不同能量的脉冲激光进行退火实验,利用X射线衍射(XRD)和探针台对晶圆背面镍硅合金进行测量分析,得出最佳能量为3.6 J/cm²。退火后采用扫描电子显微镜(SEM)观察晶圆背面碳团簇,针对背面的碳团簇问题,在Ar;气氛下对晶圆进行了表面处理,使用SEM和探针台分别对两组样品的表面形貌和电压-电流特性进行了对比分析。实验结果表明,通过表面处理可以有效降低表面的碳含量,并且使器件正向压降均值降低了6%,利用圆形传输线模型(CTLM)测得芯片的比导通电阻为9.7×10^-6Ω·cm²。器件性能和均匀性都得到提高。     

A 4-W X-band compact coplanar high-power amplifier MMIC with 18-dB gain and 25% PAE

The performance of a compact coplanar microwave monolithic integrated circuit (MMIC) amplifier with high output power in the X-band is presented. Based on our 0.3-/spl mu/m gate-length GaAs power pseudomorphic high electron mobility transistor (PHEMT) process on 4-in wafer, this two-stage amplifier, having a chip size of 16 mm/sup 2/, averages 4-W continuous-wave (CW) and 25% mean power-added efficiency (PAE) in the X-band, with more than 18-dB linear gain. Peak output powers of P/sub -1dB/=36.3dBm (4.3 W) and P/sub sat/ of 36.9 dBm (4.9 W) at 10 GHz with a PAE of 50% were also measured. Compared to previously reported X-band coplanar high-power amplifiers, this represents a chip size reduction of 20%, comparable to the size of compact state-of-the-art microstrip power amplifiers.     

A 220 GHz Single-Chip Receiver MMIC With Integrated Antenna

This letter presents the design and characterization of a 220 GHz microstrip single-chip receiver monolithic microwave integrated circuit (MMIC) with an integrated antenna in a 0.1 mum GaAs metamorphic high electron mobility transistor technology. The receiver MMIC consists of a novel slot-square substrate lens feed antenna, a three-stage low noise amplifier, and a sub-harmonically pumped resistive mixer. The receiver MMIC is mounted on a 12 mm silicon substrate lens which focuses the radiation from the calibration loads to the on-chip antenna through an opening in the backside metallization of the MMIC. The double sideband noise figure of this quasioptical receiver is as low as 8.4 dB (1750 K) at 220 GHz including the losses in the antenna and in the lens. To the best of the authors' knowledge, this work demonstrates the highest integration level versus operating frequency for a MMIC ever published, regardless of technology.     

2～8 GHz微波单片可变增益低噪声放大器

报道了一种微波宽带 Ga As单片可变增益低噪声放大器芯片。该芯片采用南京电子器件研究所 76mm圆片 0 .5μm PHEMT标准工艺制作而成。工作频率范围为 2～ 8GHz,在零衰减时 ,整个带内增益大于 2 5d B,噪声系数最大为 3 .5 d B,增益平坦度小于± 0 .75 d B,输入驻波小于 2 .0 ,输出驻波小于 2 .5 ,输出功率大于 1 0d Bm。放大器增益可控大于 3 0 d B。实验发现 ,芯片具有良好的温度特性。该芯片面积为 3 .6mm× 2 .2 mm。     

Beyond G-band: a 235 GHz InP MMIC amplifier

We present results on an InP monolithic millimeter-wave integrated circuit (MMIC) amplifier having 10-dB gain at 235GHz. We designed this circuit and fabricated the chip in Northrop Grumman Space Technology's (NGST) 0.07-/spl mu/m InP high electron mobility transistor (HEMT) process. Using a WR3 (220-325GHz) waveguide vector network analyzer system interfaced to waveguide wafer probes, we measured this chip on-wafer for S-parameters. To our knowledge, this is the first time a WR3 waveguide on-wafer measurement system has been used to measure gain in a MMIC amplifier above 230GHz.     

A 77 GHz mHEMT MMIC Chip Set for Automotive Radar Systems

A monolithic microwave integrated circuit (MMIC) chip set consisting of a power amplifier, a driver amplifier, and a frequency doubler has been developed for automotive radar systems at 77 GHz. The chip set was fabricated using a 0.15 µm gate‐length InGaAs/InAlAs/GaAs metamorphic high electron mobility transistor (mHEMT) process based on a 4‐inch substrate. The power amplifier demonstrated a measured small signal gain of over 20 dB from 76 to 77 GHz with 15.5 dBm output power. The chip size is 2 mm × 2 mm. The driver amplifier exhibited a gain of 23 dB over a 76 to 77 GHz band with an output power of 13 dBm. The chip size is 2.1 mm × 2 mm. The frequency doubler achieved an output power of –6 dBm at 76.5 GHz with a conversion gain of ?16 dB for an input power of 10 dBm and a 38.25 GHz input frequency. The chip size is 1.2 mm × 1.2 mm. This MMIC chip set is suitable for the 77 GHz automotive radar systems and related applications in a W‐band.     

Advanced Dicing Technology for Semiconductor Wafer—Stealth Dicing

ldquoStealth dicing (SD)rdquo was developed to solve inherent problems of a dicing process such as debris contaminants and unnecessary thermal damages on a work wafer. A completely dry process is another big advantage over other dicing methods. In SD, the laser beam power of transmissible wavelength is absorbed only around focal point in the wafer by utilizing the temperature dependence of the absorption coefficient of the wafer. The absorbed power forms a modified layer in the wafer, which functions as the origin of separation in the separation process. In this paper, we applied this method for an ultra-thin wafer. The reliability of devices that is diced by SD was confirmed.     

500 GHz GaAs MMIC sampling wafer probe

A 500 GHz bandwidth GaAs MMIC sampling wafer probe is reported which incorporates a mechanical flexure and a micromachined GaAs IC for time domain on-wafer measurements. The GaAs IC incorporates a novel high speed pulse sharpener and a two-diode sampling bridge with a micromachined GaAs tip.<>     

级联型单级分布式宽带单片功率放大器

报道了一个采用级联型单级分布式结构的宽带单片功率放大器的设计方法和研制结果。文中通过拓扑比较和人工传输线理论研究,分析出该功放设计的难点,并基于仿真实验,给出解决方案。最终研制的两级单片功放在6～18GHz频率范围内线性增益13.5dB,平坦度±1dB,输入输出驻波比均小于2。全频带上,饱和输出功率为300～450mW,功率附加效率大于15%。该宽带单片功率放大器在100mm GaAs MMIC工艺线上采用0.25μm功率pHEMT标准工艺制作,芯片尺寸为2.7mm×1.25mm×0.08mm。     

基于RC-CR多相网络的镜频抑制接收机MMIC

基于RC-CR多相网络技术研制了一款S波段镜频抑制接收机单片微波集成电路(MMIC),在MMIC芯片上集成S波段低噪声放大器(LNA)、差分IQ混频器、本振(LO)驱动放大器、RC-CR多相网络滤波器等电路单元,实现了S波段单片镜频抑制接收机,解决了镜频接收机小型化的问题.电路、电磁场软件仿真以及采用GaAs赝配高电子迁移率晶体管(PHEMT)工艺流片后的结果表明,在S波段实现了噪声系数小于1.8 dB,增益大于12 dB,中频(150±5) MHz带内镜频抑制大于35 dBc的技术指标.MMIC的芯片尺寸为4.8 mn×2.5 mm×0.07 mm.此镜频抑制接收机MMIC具有指标优异、体积小、集成度高的特点,可广泛用于各种需小型化的相控阵雷达和通信系统中.     

（英）D波段InP基高增益、低噪声放大芯片的设计与实现

利用90-nm InAlAs/InGaAs/InP HEMT工艺设计实现了两款D波段（110~170 GHz）单片微波集成电路放大器。两款放大器均采用共源结构,布线选取微带线。基于器件A设计的三级放大器A在片测试结果表明：最大小信号增益为11.2 dB@140 GHz,3 dB带宽为16 GHz,芯片面积2.6×1.2 mm2。基于器件B设计的两级放大器B在片测试结果表明：最大小信号增益为15.8 dB@139 GHz,3dB带宽12 GHz,在130~150 GHz频带范围内增益大于10 dB,芯片面积1.7×0.8 mm2,带内最小噪声为4.4 dB、相关增益15 dB@141 GHz,平均噪声系数约为5.2 dB。放大器B具有高的单级增益、相对高的增益面积比以及较好的噪声系数。该放大器芯片的设计实现对于构建D波段接收前端具有借鉴意义。     

Noise analysis of a photoreceiver using a P-I-N and GaAs HBT distributed amplifier combination

A noise analysis for a common-collector-cascode traveling wave HBT preamplifier is developed. The photoreceiver, consisting of a P-I-N and GaAs HBT MMIC distributed amplifier, was implemented using Nortel's f/sub T/=70 GHz GaAs HBT process, is the first to have a P-I-N mounted on the MMIC chip. The P-I-N preamplifier, having a measured bandwidth of 22 GHz, displayed a measured average equivalent input noise current density of 24 pA//spl radic/Hz. Good agreement was obtained between the predicted and measured noise performance.