SNOM的光纤探针制备及扫描电镜观察

扫描近场光学显微镜（ＳＮＯＭ）是一种新型超高分辨率光学显微镜。它既具有光学显微镜可在自然状态下观察样品，获得物体的光学信息，且对样品无任何损伤的优点，又由于采用了近场光学探测原理及技术，使得分辨率不受衍射极限的限制，从而实现光学显微镜的超高分辨率。目...     

扫描近场光学显微镜原理及其应用

扫描近场光学显微镜是八十年代以来迅速发展起来的一种光学扫描探针显微技术，本文对ＳＮＯＭ的发展历史，基本原理，技术方法，理论问题及应用前景进行了系统的介绍。     

光纤探针镀膜的扫描电镜检测

扫描近场光学显微镜（ＳＮＯＭ）是一种新型高分辨率光学显微镜。它突破了传统的光学显微镜所受到的衍射极限，可在超高光学分辨率下进行纳米尺度的光学成像。已报道的近场光学显微镜的分辨率已达１０ｎｍ。因此，近场光学显微镜将在物理、化学、生物学及材料科学等领域有...     

4－甲氧基－3－甲基－4′－硝基二苯乙烯（MMONS）晶体生长与二阶非线性光学性质的研究

报道了ＭＭＯＮＳ的生长，研究了它的二阶非线性光学性能，为ＭＭＯＮＳ能实际应用提供了理论指导。     

用于扫描近场光学显微镜的一种新型非光学样品-探针间距测控方法

扫描近场光学显微镜ＳＮＯＭ自八十年代中期以来获得了的发展,并具有超衍射极限光学分辨率。作为ＳＮＯＭ的关键技术之一,样品与探针间距的控制十分重要而且实现起来比较困难。基于剪切力原理,本文提出了一种新型的样品－针尖间距测控的非光学方法,邓,利用压电陶瓷的压坟电效应,将压电陶瓷分为三部分,分别用地激励探针法动,固定地以及擦在振动变化。该方法的灵敏度很高,可将样吕－针尖的间距控制在３ｎｍ左右,而且廉价,制     

微光电子的重要技术—近场扫描光学显微技术

微光电子的重要技术──近场扫描光学显微技术近场扫描光学显微技术（ｎｅａｒ—ｆｉｅｌｄｓｃａｎｎｉｎｇｏｐｔｉｃａｌｍｉｃｒｏｓｃｏｐｙ，ＮＳＯＭ）是由美国ＡＴ＆ＴＢｅｌｌ实验室从九十年代开发，用于在数微米面积内工作的一种新型光学观察技术。在此之前，光...     

SUPERTEX公司DMOS选型指南

ＳＵＰＥＲＴＥＸ公司ＤＭＯＳ选型指南１、低开启电压Ｎ沟道增强型ＭＯＳＦＥＴ２、低开启电压Ｐ沟增强型ＭＯＳＦＥＴ３、Ｎ沟道耗尽型ＭＯＳＦＥＴ４、Ｎ沟进增强型ＭＯＳＦＥＴ５、Ｐ沟道增强型ＭＯＳＦＥＴ６、低压Ｎ沟道ＭＯＳＦＥＴ阵列７、低压Ｐ沟道ＭＯＳＦＥＴ...     

CMOS／SIMOX倒相器的抗总剂量辐照特性

对条栅ＣＭＯＳ／ＳＩＭＯＸ倒相器在不同偏置条件下进行了＾６０Ｃｏγ射线的总剂量辐照试验，比较研究了ＰＭＯＳ、ＮＭＯＳ对倒相器功能的影响，发现ＮＭＯＳ抗总剂量副照性能比ＰＭＯＳ差，主要是ＮＭＯＳ引起器件功能的失效。     

CMOS／SIMOX例相器的抗总剂量辐照特性

对条栅ＣＭＯＳ／ＳＩＭＯＸ例相器在不同偏置条件下进行了６０Ｃｏγ射线的总剂量辐照试验，比较研究了ＰＭＯＳ、ＮＭＯＳ对倒相器功能的影响，发现ＮＭＯＳ抗总剂量辐照性能比ＰＭＯＳ差，主要是ＮＭＯＳ引起器件功能的失效。     

一种宽范围电压探测器的设计

以耗尽型ＮＭＯＳ管构成参考电压,通过激光修整,调节有关电阻的阻值和ＭＯＳ管的栅长,设计了一种探测范围很广的电压探测器。ＳＰＩＣＥ模拟表明,该电压探测器具有功耗低、温度漂移低、精确度高的特点。     

From diffusive in-plane to ballistic out-of-plane heat transport in thin non-crystalline films

By means of Scanning Near-field Thermal Microscopy and with the support of equivalent thermal circuit modelling the transition from diffusive in-plane heat flux to ballistic Stefan–Boltzmann like out-of-plane heat flux from a nanoscale heat source is demonstrated. The results obtained on atomic layer deposited thin amorphous films with a thickness larger than the phonon mean-free path will significantly influence the thermal management and reliability investigations of modern devices based on thin film technology.     

Nanoscale thermally induced stress analysis by complementary Scanning Thermal Microscopy techniques

Thermally induced stress is determined using boundary values obtained by complementary Scanning Joule Expansion Microscopy and Scanning Thermal Microscopy. The stress function is then solved with the Finite Element Method. Surface stress analysis as well as stress analysis of multilayered structures are performed in order to demonstrate the application of the developed measurement technique to reliability investigations.     

Impact of silicon surface characteristics on MOS device yield for ULSI

The quality of thin thermal oxide layers are a primary concern for the yield and reliability of MOS-devices. In this paper it is demonstrated that the electrical characteristics of these layers are strongly influenced by the characteristics of the Si surface prior to the growth of the oxide layer. The effect of the Si surface cleanliness and topography on the gate oxide quality is discussed. Total Reflection X-Ray Fluorescence Analysis measurements, Scanning Tunneling and Scanning Optical Microscopy are used to trace the origin of the observed effects. It is suggested that a combination of a rough Si surface with the presence of (metallic) contamination strongly degrades the oxide breakdown properties.     

Oxide charge measurements in EEPROM devices

A method to measure “on site” programmed charges in EEPROM devices is presented. Electrical AFM based techniques (Electric Force Microscopy (EFM) and Scanning Kelvin Probe Microscopy (SKPM)) are used to probe directly floating gate potentials. Both preparation and probing methods are discussed. Sample preparation to access floating gate/oxide interfaces at a few nanometers distance without discharging the data reveals to be the key point, more than the probing technique itself.     

4-(4-乙烯基苯基)苯甲酸-(-4乙烯基)苯酯的合成

以联苯为原料,经傅克酰化、溴代、格氏和氧化反应,制备了4-(4-乙酰基苯基)苯甲酸;以苯甲醚为原料经傅克酰化,醚解制备了4-乙酰基苯酚;两者再经酯化、还原、脱水反应,合成了一种新型的双官能团聚合物材料单体4-(4-乙烯基)苯基苯甲酸-(4-乙烯基)苯酯,基于联苯的总收率为7%～10%,其结构经1 H NMR和FT-IR确认,并用偏光显微镜和差示扫描量热仪对其液晶性进行了研究。     

拉曼光谱快速诊断恶性肿瘤研究

恶性肿瘤是目前威胁人类健康的主要疾病之一,早期发现可降低发病率和死亡率。本文利用表面增强拉曼散射原理,自行研制了超高灵敏近场拉曼分子指纹分析系统。对癌症患者血清和正常人血清进行检测,分别得到了它们的拉曼指纹图谱。通过癌症患者血清和正常人血清拉曼图谱的对比分析,初步证明用拉曼光谱可以实现恶性肿瘤的早期诊断。     

Assessment of the Analytical Capabilities of Scanning Capacitance and Scanning Spreading Resistance Microscopy Applied to Semiconductor Devices

In this work we compare the performance of Scanning Capacitance Microscopy and Scanning Spreading Resistance Microscopy for the characterization of doping profiles in semiconductor devices. Particular attention is devoted to parameters of paramount importance for the failure analysis and the characterization of silicon devices, like the quantitative one-dimensional profiling accuracy, the electrical junction delineation and the two-dimensional sub-micron imaging capability.     

Electron BackScattered Diffraction (EBSD) use and applications in newest technologies development

Electron BackScattered Diffraction (EBSD) is a Scanning Electron Microscopy (SEM) based technique where diffraction patterns of backscattered electrons are collected on a screen and analyzed. This paper presents how EBSD provides quantitative and local information about metal texture, grain size, grain boundaries and twins. The application of the EBSD technique to copper layers texture characterization at SEM resolution scale shows outstanding results on both full sheet and patterned wafers. It helps process engineers and integration teams to improve devices yield and reliability.     

半导体界面分析新技术

介绍了可以在微观级对半导体界面的电学性质进行评价的两种新技术及其应用。分析了弹道电子辐射显微镜分析技术和显微光应答法技术的特点及实用性，并指出了它们所存在的局限性。     

Investigation of a new method for dopant characterization

In microelectronics, the size of the components is continuously decreasing and is now in deep submicron range. Therefore, the dimensions of the implant profile become a major issue. Indeed, a slight fluctuation of the profile could be the origin of detrimental effects of the final properties of the component, such as the increase of the leakage current for instance. The failure analysis at implant level makes it possible to solve problems which have occurred on the production line. It can explain bad properties of the component and consequently increase the reliability of the products manufactured. SCM (Scanning Capacitance Microscopy) and SSRM (Scanning Spreading Resistance Microscopy) are more and more used for dopant visualization. These techniques have some limitations for future devices, which are mainly the spatial resolution and the accessibility of the areas under investigation by the AFM electrical tip. The proposed approach combines chemical delineation and topographic AFM in order to take advantage of the accuracy of the topographic AFM profile measurement on implant delineated regions.