溶胶-凝胶法制备ZnO纳米薄膜的工艺和应用

ZnO是一种重要的功能材料和新型的Ⅱ-Ⅵ族宽禁带半导体材料.采用溶胶-凝胶(Sol-gel)工艺在Si(100)、Si(111)和c面蓝宝石衬底上成功制备出高质量的ZnO纳米薄膜,并用XRD、SEM、AFM等方法研究了薄膜的特性.首次以制备的ZnO纳米薄膜为缓冲层,在n型Si(100)衬底上采用低压化学气相沉积(LPCVD)工艺外延生长了SiC薄膜,得到了低载流子浓度、高电子迁移率和高空穴迁移率的两种SiC薄膜样品,分析了该薄膜的性能.     

HgCdTe材料应用与制备的进展

HgCdTe是一种有广泛应用前景的Ⅱ-Ⅵ族化合物半导体光电材料。从投资上看,它已为仅次于Si和GaAs的第三种最重要的半导体。HgCdTe是制作红外探测器的最佳材料。本文简要地介绍了HsCdTe材料的性质以及它的应用和制备进展,着重描述了在红外探测器上的应用。对制备HgCdTe单晶的各种工艺方法作了比较说明,较详细地介绍了滑动液相外延(LPE)制备HgCdTe单晶薄膜技术。     

退火温度和溅射时间对磁控溅射法制备Mg2Si薄膜的影响

采用磁控溅射法和原位退火工艺在钠钙玻璃衬底上制备 Mg2Si 薄膜。首先在钠钙玻璃衬底上交替溅射沉积两层Si、Mg 薄膜,冷却至室温后原位退火4 h,制备出一系列 Mg2Si 薄膜样品。通过 X 射线衍射仪(XRD) 、 扫描电子显微镜(SEM)对所得薄膜样品的晶体结构和表面形貌进行表征, 讨论了退火温度和溅射Si/Mg/Si/Mg 时间对制备 Mg2Si 薄膜的影响。结果表明,采用磁控溅射法在钠钙玻璃衬底上交替溅射两层Si、Mg 薄膜, 通过原位退火方式成功制备出单一相的 Mg2Si 薄膜,溅射Si/Mg/Si/Mg 的时间为12.5/9/12.5/9 min,退火温度为550 ℃ 时,制备的 Mg2Si 薄膜结晶度最好,连续性和致密性最强。这对后续 Mg2Si 薄膜器件的设计与制备提供了重要的参考。 积两层Si、Mg 薄膜, 冷却至室温后原位退火4 h, 制备出一系列 Mg2Si 薄膜样品. 通过 X 射线衍射仪(XRD) 、 扫描 电子显微镜(SEM)对所得薄膜样品的晶体结构和表面形貌进行表征, 讨论了退火温度和溅射Si/Mg/Si/Mg 时间 对制备 Mg2Si 薄膜的影响. 结果表明, 采用磁控溅射法在钠钙玻璃衬底上交替溅射两层Si、Mg 薄膜, 通过原位退火 方式成功制备出单一相的 Mg2Si 薄膜, 溅射Si/Mg/Si/Mg 的时间为12.5/9/12.5/9 min, 退火温度为550 ℃ 时, 制 备的 Mg2Si 薄膜结晶度最好, 连续性和致密性最强. 这对后续 Mg2Si 薄膜器件的设计与制备提供了重要的参考.     

半磁半导体薄膜的热壁外延生长成功

半磁半导体是一种将磁性元素掺入半导体后生成的新材料,国际上自80年代开始受到重视.因它将物质的磁性与半导体性质结合起来,使两种最重要的固体属性可以在同一种材料中存在,因而产生出许多一般半导体材料所不具有的新现象和新特性,在未来的电子器件中会有重要应用. 半磁半导体有体材料和薄膜材料两类.在物理研究和应用上,薄膜材料的重要性更为明显.制备薄膜材料的方法,国际上一般采用分子束外延和化学气相淀积技术.国内除了有少数单位制备体材料外,薄膜材料的制备尚属缺门. 复旦大学应用表山物理国家重点实验室用简单的国产设备,建立了一套…     

Mn掺杂对热蒸发制备Mg_(2-x)Mn_xSi薄膜结构和电学特性的影响

采用热蒸发镀膜方法制备Mg_(2-x)Mn_xSi(原子比x=0.00,0.02,0.04,0.06,0.08)半导体薄膜.用X射线衍射仪(XRD)、原子力显微(AFM)对Mg_(2-xMn_xSi薄膜样品的晶体结构和表面形貌进行表征,用四探针仪测试样品的电阻率,研究Mn掺杂量对Mg2Si薄膜结构和电阻率的影响.结果表明,在Si(111)衬底上制备Mg_(2-xMn_xSi多晶薄膜,其衍射峰(220)、(200)和(111)随Mn含量的增加逐渐增强.当x=0.02-0.06时,制备的Mg_(2-xMn_xSi薄膜具有较低的平均粗糙度和RMS(Root Mean Square)粗糙度.Mn掺杂降低了Mg2Si薄膜的电阻率,且电阻率随着掺杂量的增加呈现下降趋势.     

在a-平面蓝宝石衬底上分子束外延生长的ZnO和ZnMgO材料结构和光学性质(英文)

氧化锌材料是新一代宽禁带光电子半导体材料,我们通过等离子体分子束外延设备,在a plane的蓝宝石衬底生长了高质量的氧化锌外延材料。在生长过程中用反射高能电子束衍射仪(RHEED),在位地研究了生长时材料薄膜的表面形貌。通过调节ZnMgO材料镁的组份,生长了禁带宽度可调的宽禁带材料。用紫外-可见透射光谱研究了ZnO,Zn0.89Mg0.11O和Zn0.80Mg0.20O薄膜材料的透射和吸收光谱性质,观察到Zn0.89Mg0.11O,Zn0.80Mg0.20O材料的吸收边的蓝移现象等。以上说明了我们用分子束外延生长 收稿日期:2003 07 22·09·　　第1期StructuralandOpticalCharacterizationofZnOandZnMgOFilmsona-planesapphiresbyMolecularBeamEpitaxy2004年设备成功的生长了高质量的氧化锌和组份渐变的ZnMgO薄膜材料。     

磁控溅射法合成纳米β-FeSi2/a-Si多层结构

β-FeSi₂作为一种环境友好的半导体材料，颗粒化及非晶化正在成为提高其应用性能和改善薄膜质量、膜基界面失配度的有效途径.利用射频磁控溅射法在单晶Si基体上沉积Fe/Si多层膜，合成纳米β-FeSi₂/Si多层结构.通过透射电子显微镜、高分辨电子显微术等分析手段，研究了多层结构和制备工艺之间的相互关系.研究结果表明，采用磁控溅射Fe/Si多层膜的方法，不需要退火就可以直接沉积得到β-FeSi₂相小颗粒.β-FeSi₂相 关键词： 2')" href="#">β-FeSi₂ 磁控溅射 透射电子显微镜 半导体薄膜     

Growth and Chemical Thermodynamics Analysis of SiC Film on Si Substrate by Heating Polystyrene/Silica Bilayer Method

采用改进的PS/OCS/Si(111)叠层热解法,在石英高温管式炉中,常压流通Ar气氛下,于1300 o C制备出了无层错空洞缺陷的晶态SiC薄膜．采用红外、X射线衍射和扫描电镜等分析方法对薄膜样品进行了表征．并研究了这种方法制备SiC薄膜的化学热力学过程．通过对反应平衡常数和吉布斯自由能的计算,初步确定了生成SiC的主反应的发生顺序以及反应体系的平衡状态,并论证了流通的Ar气氛对于反应的持续进行是必须的．该方法制备的薄膜为SiO2/SiC/Si(111)结构,这种结构对于半导体MOS器件的应用是非常有利的．该SiO2层形成反应后期降温阶段,并且可以通过RCA清洗工艺(标准半导体清洗工艺)彻底清除．目前还没有发现用这种方法生长SiC薄膜的报道．     

离子注入和固相外延制备Si1-x-yGexCy半导体薄膜

用等离子体增强化学气相淀积(PECVD)生长了200nm的SiGe薄膜,然后将C离子注入SiGe层,经两步热退火处理制备了Si1-x-yGexCy三元合金半导体薄膜.应用卢瑟福背散射(RBS),傅里叶变换红外光谱(FTIR)和高分辨率x射线衍射(HRXRD)研究了薄膜的结构和外延特性.发现C原子基本处于替代位置,C原子的掺入缓解了SiGe层的压应变 关键词： Si1-x-yGexCy薄膜 离子注入 固相外延     

氧化锌薄膜光电功能材料研究的关键问题

氧化锌薄膜光电功能材料是近年来新发展起来的研究课题,由于它在短波长光电信息功能材料方面具有潜在的应用前景而备受关注.为了开发ZnO结型光电器件,目前首先需要解决高质量ZnO单晶薄膜的外延及p型掺杂等关键问题.综合国内外的研究结果,结合我们的工作,叙述了利用多晶格匹配原理通过过渡层在Si衬底上异质外延高质量ZnO薄膜,介绍了用SiC作过渡层生长ZnO薄膜的有关问题.对ZnO的p型掺杂,分析了制备p型ZnO的困难和利用Ⅲ-Ⅴ族共掺杂方法生长p型ZnO的作用和优点.     

Homogeneous Si films on CaF2/Si(1 1 1) due to boron enhanced solid phase epitaxy

The structure and morphology of Si/CaF₂/Si(1 1 1) structures have been investigated by X-ray diffraction (XRD, GIXRD) and X-ray photoelectron spectroscopy (XPS). While CaF₂ films were grown via molecular beam epitaxy (MBE), Si films on CaF₂/Si(1 1 1) are fabricated by surfactant enhanced solid phase epitaxy (SE-SPE). Here Boron was used as a surfactant to obtain semiconductor films of homogeneous thickness. The Si films are entirely relaxed while the CaF₂ films have both pseudomorphic and relaxed crystallites. After exposure to ambient conditions, the Si films have a very thin native oxide film. The homogeneous Si film partially prevents the incorporation of impurities at the interface between the Si substrate and CaF₂ via migration along residual defects of the CaF₂ film.     

Surface texturing of Si, porous Si and TiO2 by laser ablation

Excimer laser ablation at 308 nm has been used to texture the surfaces of a variety of materials of interest for optoelectronic and biotechnological applications. Using a range of pre- and post-processing methods, we are able to produce nano-, micro- and meso-scale features over large areas rapidly in materials such as crystalline Si, porous silicon and TiO₂. Texturing of porous silicon leads to the growth of crystalline dendritic structures, which distinguishes them dramatically from the conical pillars formed from crystalline silicon. Regular arrays of Si microdots are formed by irradiating a Si surface pre-covered with a Cr thin film grating. Nano-crystalline porous TiO₂ films are easily ablated or compacted with laser irradiation. However, at low enough laser fluence, surface roughening without complete loss of porosity is possible.     

Novel catalysts: Indium implanted SiO2 thin films

Interactions of Indium (In) and silicon (Si) atoms are known to catalyze certain organic chemical reactions with high efficiency. In an attempt of creating a material that manifests the interactions, In implanted SiO₂ thin films were prepared by ion beam injection and their catalytic abilities for organic chemical reactions were examined. It has been found that, with an injection energy of approximately 0.5 keV, a thin In film is formed on a SiO₂ substrate surface and the In implanted SiO₂ thin film can catalyze an organic chemical reaction. It has been also shown that there is an optimal ion dose for the highest catalytic ability in the film preparation process. Thin-film-type catalyzing materials such as the one proposed here may open a new way to enhance surface chemical reaction rates.     

Effect of CoSi2 buffer layer on structure and magnetic properties of Co films grown on Si（001） substrate

Buffer layer provides an opportunity to enhance the quality of ultrathin magnetic films.In this paper,Co films with different thickness of Co Si2buffer layers were grown on Si(001)substrates.In order to investigate morphology,structure,and magnetic properties of films,scanning tunneling microscope(STM),low energy electron diffraction(LEED),high resolution transmission electron microscopy(HRTEM),and surface magneto-optical Kerr effect(SMOKE)were used.The results show that the crystal quality and magnetic anisotropies of the Co films are strongly affected by the thickness of Co Si2buffer layers.Few Co Si2monolayers can prevent the interdiffusion of Si substrate and Co film and enhance the Co film quality.Furthermore,the in-plane magnetic anisotropy of Co film with optimal buffer layer shows four-fold symmetry and exhibits the two-jumps of magnetization reversal process,which is the typical phenomenon in cubic(001)films.     

Si-Al2O3复合薄膜的室温铁磁性

在Si-Al₂O₃复合薄膜中观察到室温铁磁性.Si的体积百分比为15 %的Si-Al₂O₃复合薄膜的磁性最强.Si的含量影响样品的磁有序,在样品中观察到了明显的磁畴.在不同气氛下,对样品进行快速热退火.退火样品的磁性测试结果的差别表明氧空位不是样品铁磁性的主要来源.我们认为铁磁性来源于Si与Al₂O₃基质界面之间的缺陷的磁耦合.改变Si的含量可以改变缺陷密度,从而控制铁磁耦合强度. 关键词： 2O₃薄膜')" href="#">Al₂O₃薄膜 室温铁磁性 掺杂 交换相互作用     

Wet-chemical dip-coating preparation of highly oriented copper-aluminum oxide thin film and its opto-electrical characterization

Transparent p-type semiconducting copper aluminum oxide thin film has been synthesized by a wet-chemical route. CuCl and AlCl₃, dissolved in HCl, are taken as starting materials. pH value of the solution is controlled by adding a measured amount of NaOH into it. Films are deposited by dip-coating technique on glass and Si substrates followed by annealing in air at 500 °C for 3 h. XRD pattern confirms the crystalline CuAlO₂ phase formation in the film and also indicates a strong (0 0 6) orientation. UV-vis spectrophotometric measurements show high transparency of the film in the visible region with a direct allowed bandgap of 3.94 eV. Electrical measurements depict the thermally activated conduction within the films. Thermoelectric measurements confirm the p-type nature of the films. Compositional analysis shows the presence of excess (nonstoichiometric) oxygen within the material, which is incorporated during the air-annealing of the film. According to defect equilibrium, this excess oxygen is predicted to cause the p-type conductivity of the film. This type of cost-effective solution-based technique is very useful for volume production of this kind of technologically important material for transparent electronic and other diverse applications.     

Analysis of excimer laser annealing of amorphous SiGe on La2O3//Si structures

The reduction of complementary metal oxide semiconductor dimensions through transistor scaling is in part limited by the SiO₂ dielectric layer thickness. Among the materials evaluated as alternative gate dielectrics one of the leading candidate is La₂O₃ due to its high permittivity and thermodynamic stability. However, during device processing, thermal annealing can promote deleterious interactions between the silicon substrate and the high-k dielectric degrading the desired oxide insulating properties.The possibility to grow poly-SiGe on top of La₂O₃//Si by laser assisted techniques therefore seems to be very attractive. Low thermal budget techniques such as pulsed laser deposition and crystallization can be a good choice to reduce possible interface modifications due to their localized and limited thermal effect.In this work the laser annealing by ArF excimer laser irradiation of amorphous SiGe grown on La₂O₃//Si has been analysed theoretically by a numerical model based on the heat conduction differential equation with the aim to control possible modifications at the La₂O₃//Si interface. Simulations have been carried out using different laser energy densities (0.26-0.58 J/cm²), different La₂O₃ film thickness (5-20 nm) and a 50 nm, 30 nm thick amorphous SiGe layer. The temperature distributions have been studied in both the two films and substrate, the melting depth and interfaces temperature have been evaluated. The fluences ranges for which the interfaces start to melt have been calculated for the different configurations.Thermal profiles and interfaces melting point have shown to be sensitive to the thickness of the La₂O₃ film, the thicker the film the lower the temperature at Si interface.Good agreement between theoretical and preliminary experimental data has been found.According to our results the oxide degradation is not expected during the laser crystallization of amorphous Si_0.7Ge_0.3 for the examined ranges of film thickness and fluences.     

Growth and properties of YAlO film synthesized by RF magnetron sputtering

YAlO films are synthesized on (1 0 0)-oriented Si substrates by RF magnetron sputtering method. Al₂O₃ wafer is used as a target material, and some small pieces of Y bulk material are put on the Al₂O₃ target to synthesize YAlO films. Y composition ratio is varied from 0 to 34%. Amorphous YAlO films are characterized. An electrical resistivity as high as 3.4 × 10¹⁴ Ω-cm is achieved for the YAlO film with Y composition ratio of 10%. The dielectric constant increases with increasing Y composition ratio, and the YAlO film with Y composition ratio of 34% has a dielectric constant of 10.2. The bandgap energy of the YAlO film is suggested to be wider than 6.5 eV. YAlO films with a surface roughness of 0.4-1.3 nm are obtained irrespective of the Y composition ratio.     

Bi2Ti2O7/Si薄膜的制备及C-V特性研究

采用化学溶液分解法(CSD)在Si衬底上制备了Bi₂Ti₂O₇薄膜.X射线双晶衍射和原子力显微镜检测表明,所制备的薄膜主要为Bi₂Ti₂O₇相的多晶材料.同时还研究了AuBi₂Ti₂O₇/n-Si(100)结构的电容电压(C-V)特性,结果表明,在Bi₂Ti₂O关键词： C-V特性 2Ti₂O₇薄膜')" href="#">Bi₂Ti₂O₇薄膜 电荷迁移