Simultaneous measurement of emissivity and temperature of silicon wafers using a polarization technique

The emissivity of a silicon wafer under various conditions was theoretically and experimentally investigated. A quantitative relationship between the ratio of p-polarized to s-polarized radiances, and the polarized emissivity was obtained, irrespective of the emissivity change of silicon wafers due to oxide film thickness under wide variations of impurity concentration. We propose a new radiation thermometry method that can measure both the temperature and the spectral polarized emissivity of a silicon wafer, and we estimate the uncertainty of these measurements. Currently, the expanded uncertainty of the temperature measurement is estimated to be 3.52 K (2k) and 3.80 (2k) for p-polarization and s-polarization, respectively, at temperatures above 900 K.     

Warping of silicon wafers subjected to back-grinding process

This study investigates warping of silicon wafers in ultra-precision grinding-based back-thinning process. By analyzing the interactions between the wafer and the vacuum chuck, together with the machining stress distributions in damage layer of ground wafer, the study establishes a mathematical model to describe wafer warping during the thinning process using the elasticity theory. The model correlates wafer warping with machining stresses, wafer final thickness, damage layer thickness, and the mechanical properties of the monocrystalline silicon. The maximum warp and the warp profile are measured on the wafers thinned to various thicknesses under different grinding conditions, and are used to verify the modeling results.     

Surface integrity of silicon wafers in ultra precision machining

Silicon wafers are the most extensively used material for integrated circuit (IC) substrates. Before taking the form of a wafer, a single crystal silicon ingot must go through a series of machining processes, including slicing, lapping, surface grinding, edge profiling, and polishing. A key requirement of the processes is to produce extremely flat surfaces on work pieces up to 350 mm in diameter. A total thickness variation (TTV) of less than 15 μm is strictly demanded by the industry for an 0.18 μm IC process. Furthermore, the surfaces should be smooth (R_a<10 nm) and have minimum subsurface damage (<10 μm) before the final etching and polishing. The end product should have crack-free mirror surfaces with a micro-roughness less than 1.8 Å. In this paper, experiments are conducted to investigate the effects of various parameters on the subsurface damage of ground silicon wafers.     

A study of the effect of tool cutting edge radius on ductile cutting of silicon wafers

Ductile mode cutting of silicon wafers can be achieved under certain cutting conditions and tool geometry. An experimental investigation of the critical undeformed chip thickness in relation to the tool cutting edge radius for the brittle-ductile transition of chip formation in cutting of silicon wafers is presented in this paper. Experimental tests for cutting of silicon wafers using diamond tools of different cutting edge radii for a range of undeformed chip thickness are conducted on an ultra-precision lathe. Both ductile and brittle mode of chip formation processes are observed in the cutting tests. The results indicate that ductile cutting of silicon can be achieved at certain values of the undeformed chip thickness, which depends on the tool cutting edge radius. It is found that in cutting of silicon wafers with a certain tool cutting edge radius there is a critical value of undeformed chip thickness beyond which the chip formation changes from ductile mode to brittle mode. The ductile-brittle transition of chip formation varies with the tool cutting edge radius. Within the range of cutting conditions in the present study, it has also been found that the larger the cutting edge radius, the larger the critical undeformed chip thickness for the ductile-brittle transition in the chip formation.     

A compact and sensitive two-dimensional angle probe for flatness measurement of large silicon wafers

A two-dimensional (2D) angle probe was developed to realize a new scanning multi-probe instrument employing 2D angle probes for flatness measurement of large silicon wafers. Each probe, which utilizes the principle of autocollimation, detects the 2D local slope components of a point on the wafer surface. The 2D local slopes (angles) are obtained through detecting the corresponding 2D positions of the reflected light spot on the focal plane of the object lens using position-sensing devices (PSDs). To make the probe compact in size, it is more effective to improve the sensitivity of angle detection by selecting proper PSDs than using an objective lens with a larger focal distance. Two kinds of photo devices, linear lateral effect PSDs and quadrant photodiodes (QPD), for sensing 2D positions were discussed theoretically and experimentally. It was shown that a QPD is the best for highly sensitive 2D angle detection. In the experiments, a compact prototype angle probe with dimensions 90(L)mm×60(W)mm×30(H) mm employing a QPD as the PSD was confirmed to have a resolution of approximately 0.01 arc-second.     

Error analysis on measurement temperature by means dual-color thermography technique

Dual color thermography is a non-contact measurement temperature technique used mainly when the emissivity of surface is unknown; it is based on ratio of monochromatic emissive power calculated by means Planck’s radiation equation and allows measuring the temperature of gray body surface objects without being assigned their emissivity and without approximations.For real surfaces, the emissivity varies with the temperature of surface as well as the wavelength and the direction of radiation. In this case, the dual color thermometry is executed by equipping the IR camera of two narrow band pass filters, so as to consider the surface emissivity of a quite constant value. This allows calculating the ratio between the radiative fluxes of the two different emission wavelengths that is almost independent to the surface emissivity.One of the crucial factor in this technique is the choice of the two narrow filter wavelengths. In fact the measurement errors depends directly on the two wavelengths and the variation of spectral emissivity related to the wavelength chosen and it also depends inversely on distance between central value of filters.In this paper, the authors have developed and validated a mathematical model of experimental setup to measure object surface temperature by means IR thermo-camera. This mathematical model was used to quantify the temperature measurement error in the dual-color technique. A novel correlation to estimate temperature measurement error was provided.     

Machining characteristics on the ultra-precision dicing of silicon wafer

Recently, the slightest damage to a circuit can cause great damage due to the sizes of semiconductor chips becoming smaller. To prevent damage to the circuit, the dicing process for silicon wafer must be controlled. In this study, the relationship between the chipping effect and the force of dicing was analyzed. The rate of chipping decreased with a decrease in the force of dicing. The force of dicing also decreased according to a lower feed rate and higher blade speed. The lower feed rate and the higher blade speed must be controlled to achieve a chip-free process.     

硅晶片的液流悬浮超光滑加工机理与实验

建立了基于机器人的液流悬浮超光滑加工系统。配置出了适用的悬浮加工液,通过对硅晶片的大量加工实验研究,得到了加工时间、工具转速和粒子浓度对工件表面质量的影响规律。实验结果表明:当加工时间在60 min、工具转速为6 000 r/min上下、粒子浓度为30 g/L左右时,加工效果最佳。加工后的硅晶片表面粗糙度Ra能达到1.55 nm。深入分析了液流悬浮超光滑加工的去除机理,硅晶片的液流悬浮超光滑加工是机械冲击作用和化学作用的综合结果,加工液中的磨料颗粒有对工件表面的机械冲击作用和对化学反应的催化作用。理论分析和实验结果表明,通过采用液流悬浮加工新技术,可以实现对半导体材料硅晶片的纳米水平的超光滑加工,获得表面无塑性变形和晶格缺陷的纳米精度表面。     

Effects of support method and mechanical property of 300 mm silicon wafer on sori measurement

This paper describes the effects of support methods and mechanical properties of 300 mm silicon wafer on sori measurement. A new supporting method, named three-point-support method, used in the sori measurement of a large diameter silicon wafer was proposed in this study to obtain a more stable measuring process. The wafer was supported horizontally by three steel balls on the vertexes of a regular triangle at the wafer edge. The measuring repeatability and anti-disturbance ability were compared between the proposed method and the conventional one-point-support method, in which the wafer is supported with a small-area chuck at the wafer center. The effects of friction between the supports and wafer surface for the three-point-support were also estimated. Finally, the influences of different mechanical characteristics at the front and back surfaces and the crystal orientation on sori measurement were investigated.     

Effects of taping on grinding quality of silicon wafers in backgrinding

Frontiers of Mechanical Engineering - Taping is often used to protect patterned wafers and reduce fragmentation during backgrinding of silicon wafers. Grinding experiments using coarse and fine...     

Dual-band pyrometry for emissivity and temperature measurements of gray surfaces at ambient temperature: The effect of pyrometer and background temperature uncertainties

A dual-band pyrometry model for target temperature (240–360 K) and emissivity measurement was developed, in which two pyrometers with different spectral bands are surrounded by an enclosure at a given background temperature. Nine equal-power spectral bands were selected for the pyrometers from wavelengths between 8 and 14 μm. The Monte Carlo method was used to compute the dual-band measurement uncertainties of temperature and emissivity caused by the propagation of the uncertainties associated with the temperatures of the two pyrometers and the temperature of the background. It was found that the rate of decrease of dual-band measurement uncertainties with increasing difference between target and background temperatures decreases with increasing target temperature. Considering the uncertainty of the background temperature, it was found that dual-band measurement uncertainties are virtually not affected by the background temperature uncertainty when the background temperature is lower than the target temperature, and dual-band measurement uncertainties increase significantly with increasing background temperature uncertainty when the background temperature is higher than the target temperature.     

Dependence of pad performance on its texture in polishing mono-crystalline silicon wafers

Mono-crystalline silicon wafers are important materials in the semiconductor industry for fabricating integrated circuits and micro-electro-mechanical systems. To ensure high surface integrity of polished wafers, the effect of pad texture and its variation on the pad performance needs to be understood. This paper studies experimentally the dependence of pad performance on its texture deterioration by investigating its correlation with polishing time, polishing pressure, and material removal rate. The study concludes that material removal rate decreases as the cylindrical cell structure of a pad is gradually deteriorated, that there is a pad life limit beyond which polishing quality can no longer be maintained, and that the workable pad life can be extended to a certain degree by applying higher polishing pressure.     

Application of multispectral radiation thermometry in temperature measurement of thermal barrier coated surfaces

Ceramics coatings are materials widely used in gas turbines to provide thermal shielding of superalloy materials against excessive turbine temperatures. However, measurement of their surface temperatures using conventional radiation thermometers, more so in the presence of high ambient radiation and low emissivity is quite challenging. A multispectral method employing curve fitting technique to measure the temperature of such targets in the range of 800–1200 K and ambient temperature of 1273 K is implemented in this paper through simulation. Several simulated experiments were carried out to identify emissivity models best suited for multispectral radiation thermometry applicable to ceramic coatings. The best emissivity model applicable to yttria-stabilized zirconia of coating thickness of 330 μm in the wavelength range of 3.5–3.9 μm was found to predict temperature with an error of less than 1.5% in the presence and absence of background noise.     

基于MSP430单片机的便携式多功能测温仪

本文介绍了一种便携式多功能测温仪。以低压低耗单片机MSP430F1491为核心.采用地址锁存器74LS373扩展两片数据存储器621024,因此具有2M的强大存储空间。并通过软件编程实现对外部温度的测量、显示、存储及与计算机通讯功能。     

基于叶序仿生抛光垫化学机械抛光温度的研究与分析

为了解决在化学机械抛光过程中抛光温度分布不均匀问题,使用叶序仿生抛光垫进行研究,并建立了抛光温度场模型。利用有限元分析软件ANSYS,对抛光温度场进行了仿真分析,获得了抛光垫的叶序参量对抛光温度分布的影响规律。通过对仿真结果进行分析发现,合理选择仿生抛光垫的叶序参数,能够使抛光温度变得更均匀。     

超薄硅衬底氮化铝Lamb波压电谐振器

针对Lamb波压电声波传感器高品质因数(Q值)、低检测极限(LOD)和易集成的性能要求,本文基于SOI(Siliconon-insulator)硅片,通过底层硅(Handling layer)干法刻蚀和中间层(Boxing layer)自截止的方法实现2μm超薄均一的硅衬底结构,然后沉积2μm厚具备高C轴择优取向的氮化铝(AlN)压电薄膜。传感器薄膜区域外设置双端增强反射栅结构用于提高Q值,从而有效降低器件的检测极限,并通过微量水分测试验证性能。该谐振器零阶反对称模式(A0)和零阶对称模式(S0)的谐振状态的实测结果和COMSOL二维模型仿真结果一致,所制作的Lamb波谐振器A0模式的主峰Q值为703,S0模式的主峰Q值为403。微量水分测试S0模式的检测极限优于A0模式,最低检测极限值为0.06%RH。结果表明,氮化铝超薄硅衬底Lamb波压电谐振器能够实现微量水分等高精度检测。     

The crystallographic change in sub-surface layer of the silicon single crystal polished by chemical mechanical polishing

The effect of the contact nominal pressure on the surface roughness and sub-surface deformation in chemical mechanical polishing (CMP) process has been investigated. The experimental results show that a better surface quality can be obtained at the lower pressure, and the thickness of sub-surface deformation layer increases with the increase of the pressure. In CMP process, polishing not only introduces amorphous transformation but also brings a silicon oxide layer with a thickness of 2–3 nm on the top surface. The atomic structure of the material inside the damage layer changes with the normal pressure. Under a higher pressure (125 kPa), there are a few crystal grain packets surrounded by the amorphous region in which the lattice is distorted, and a narrow heavy amorphous deformation band appears on the deformation region side of the interface. Under a lower pressure, however, an amorphous layer can only be observed.     

Nano‐scratch study of molecular deposition films on silicon wafers using nano‐indentation

Experiments on molecular deposition (MD) films with and without alkyl terminal groups deposited on silicon wafers were conducted using nano‐indentation. It was found that MD films and alkyl‐terminated MD films exhibit a higher critical load and a lower coefficient of friction than the silicon substrate. The critical load increases with the number of layers, and the coefficients of friction of MD films with alkyl terminal groups are lower than those of the corresponding MD films with the same number of layers but without alkyl terminal groups.     

Viscoelastic behavior of polishing pad: Effects on edge roll-off during silicon wafer polishing

In semiconductor device fabrication, surface flatness of silicon wafers has a significant impact on the chip yield. Hence, there is a strong demand to prevent the deterioration in surface flatness near the wafer edge due to edge roll-off during polishing. In the present study, we investigate the viscoelastic behavior of polishing pads and its effects on the uniformity of material removal distribution near the wafer edge. On the basis of the findings, we propose polishing conditions required to improve surface flatness near the wafer edge. The double-sided polishing experiments performed using silicon wafers reveal that the proposed polishing conditions effectively reduce edge roll-off.     

基于点源透过率测试系统的杂散光标定

为了提高点源透过率(PST)测试系统的杂散光测试能力及测试精度,提出并设计了一种标准镜头,用于在大离轴角范围内对系统的杂散光测试范围及测试精度进行标定。利用简单的物理模型设计了一种在实验室内对点源透过率测试系统杂散光测试精度定标的标准镜头;测量了标准镜头的表面物理参数,并将其带入TracePro软件计算出了不同离轴角对应的PST。对设计分析的PST值与实测的PST值进行比较,从而计算得到了该测试系统的测量精度。验证实验表明,该标准镜头的PST分析值与实测值之差优于lg/0.5,满足实验室内对点源透过率测试系统杂散光测量精度进行标定的要求,是PST绝对测量的可靠方法。该项技术为国内PST测试系统的精度校准问题提供了技术保障。