直流表面接触电阻测试技术

针对金属材料直流表面接触电阻的特点,研制成功一套平板型金属材料直流表面接触电阻测试装置,实现了金属试样表面接触电阻的自动测量和数据处理.所研制测试系统的接触电阻测试动态范围为0.01mΩ～20Ω,测试结果对电磁兼容性结构设计工作具有重要的指导意义.     

温差电器件接触电阻和接触热阻的测试及分析

接触电阻和接触热阻是影响温差电器件性能的两个重要的工艺参数，直接反映器件制造的工艺水平。因此，对器件的接触电阻和接触热阻进行测试分析，将能够定量地了解现行工艺对器件温差电性能的影响程度。本文首先介绍接触电阻的测试方法和实验结果，然后利用所测的数据，再通过对器件输出功率特性的测试，间接地导出器件的接触热阻。据笔者所知，这是温差电器件接触热阻实测数值的首次报道。     

铝—电极孔界面接触电阻大的分析

双极事业部五分厂在圆片生产过程中出现这样一个问题；“做完铝布线后发现电极孔接触电阻大”。这一问题对生产造成很大影响，阻碍了一部分产品成品率的提高。为解决这一问题，由双极五分厂负责蒸发工艺的同志和支援中心工艺室共同组成课题组对这一问题共同分析探讨，做了一些工作，初步搞清了问题的根源。为解决这一问题，我们用PHI610型扫描俄歇微探针为主要分析手段。该仪器的基本原理是：一个聚焦电子束以一定的能量照射到样品表面上，样品表面就被激发出X－ray、二次电子、背散射电子、俄歇电子等信息。俄歇能谱就是把样品表面发射出…     

圆片测试中探针接触电阻的影响与改善方法

介绍了影响探针接触电阻的几个因素,探讨了在测试过程中探针表面的变化以及接触电阻变大的原因、接触电阻对测试的影响。提出了几种控制接触电阻的办法,从材料、探针卡制作方面控制接触电阻的产生,在测试生产过程中通过定期清针、吹氮气等方式减少针尖损耗并减小接触电阻,在测试技术上采用双针开尔文连接和其他一些优化方式避免接触电阻对电参数测试的影响。通过以上方式有效提高了测试准确性和测试过程的顺畅性。     

网络法测量光电导欧姆接触电阻的技术与分析

给出了高电阻率光电导体在受力情况下欧姆接触咀阻的测量技术。分别不用 Si(ρ≈3×10~4Ω·cm)及 Cr:GaAs(ρ≈10~8Ω·cm)晶体测量其铟(In)欧姆接触电阻值,并对该方法测量精度进行了分析。     

新型接触电阻检测仪的应用

互连器件接触电阻检测,一直是系统连接后判别每个接点接触是否可靠良好,必须解决的实际问题。随着高密度、小型化的互连器件在电子电气设备上的广泛应用,如何解决互连器件接触电阻的在线自动检测,己成为确保互连器件质量和可靠性的关键。文中在详细阐述接触电阻检测原理的基础上,介绍了新研制的TDO-MCR-07A多接点接触电阻检测仪特点、检测方法和主要技术参数,以及连接电脑和工装组成自动检测系统后,成功用于保险丝盒接触电阻自动检测的实例。     

接线方法对回路电阻测试结果的影响分析

回路电阻测试是断路器最基本的测试项目,在相关的行业规定中对试验接线提出了需要遵循的原则.文中通过理论计算和实验对不同接线方式的测量结果影响进行了分析,可供完善相关规定借鉴.     

BurnIn(老化)插座接触电阻的在板测试

在BurnIn的生产过程中,会出现测试不稳定,低良品率等问题。对于这样的问题,工程师会通过调试程序来确定,是芯片本身出现的偏差,还是测试程序不够稳定,或者是BurnIn板子由于长时间使用,导致插座接触不良。对于插座能否正常接触,可以通过直接测量芯片引脚上的信号来判断,但对于好多芯片在放入插座之后,根本没有办法测试引脚上的信号。文章引入在BurnIn板子上测量插座接触电阻的方法,介绍了在BurnIn板子上测量接触电阻的必要性和实现方法。通过在BurnIn板子上,增加插座接触电阻的测试功能,对BurnIn程序调试,BurnIn生产过程中出现问题的分析,以及生产的BurnIn板子维护都有很大的帮助。     

CTLM测量金属/半导体欧姆接触电阻率

系统地介绍了用圆形传输线模型（ Ｃ Ｔ Ｌ Ｍ） 测量金属／ 半导体欧姆接触电阻率的基本原理。以 Ａｌ／ Ｓｉ 接触为例研究了不同掺杂浓度和不同温度退火对接触特性和接触电阻率ρ Ｃ 的影响。测量得到 Ａｌ／ Ｓｉ 欧姆接触电阻率的最小值约为２ ．４ ×１０ － ５ Ω·ｃｍ ２ 。     

Origin and prevention of high contact resistance in multilevel metal-polyimide structures

When polyimide is used as the insulating dielectric in multilevel-metal structures, a high contact resistance can result within the interconnecting vias. This paper examines the particular case of oxygen plasma patterning of the polyimide using a photoresist mask. Auger analysis in combination with compositional depth profiling was employed on a series of samples to measure surface composition of etched vias in polyimide. Results show two effects which, together, can account for high contact resistance: first, there is a thicker than normal aluminum oxide layer on the first level metal surface (due to exposure to the oxygen plasma); second, there is a thin, etch-resistant carbonaceous film (due to redeposition of organic material during plasma etching) that prevents oxide thinning through chemical means. It was found that by lowering the plasma pressure to 50 mTorr near the end of the etch, the organic film can be removed. In the absence of the carbonaceous layer, the oxide can then be chemically thinned to produce clean aluminum surfaces within the vias.     

On the source of scatter in contact resistance data

Previous treatments have assumed that small fluctuations in contact window dimensions between devices are chiefly responsible for the scatter in contact resistance data. Although this is plausible, it is shown in this paper that the source of this scatter is variation in contact resistivity, ρ_c, from resistor to resistor. It is further suggested that ρ_c is Cauchy distributed. Since standard deviation is in theory infinite for a Cauchy distribution, very high values of resistance at a contact window would occur with much greater frequency than common sense might suggest.     

AFM探针针尖与试件表面接触力计算方法研究

原子力显微镜是利用接近试样表面的探针针尖上的作用力而工作的。针尖与试件表面纳米接触力的变化对表面检测有重要的影响。在分析原子力显微镜工作原理和纳米接触力计算模型基础上,根据Hamaker假设,利用连续介质方法,建立了针尖同试样表面在接近过程中的纳米接触力计算模型;根据Hertzian接触理论,建立了针尖同试样表面在接触压入过程中的接触力的计算模型。通过叠加计算,获得了耦合接近过程和接触压入过程中的接触力计算方法。根据计算模型,利用Matlab编程计算获得了针尖与试样表面纳米接触作用力的变化规律。为提高原子力显微镜的表面检测精度和进行误差分析提供基础。     

触点初始接触电阻的分布特征与寿命相关性研究

为实现用初始信息来预测继电器产品的寿命,在继电器电寿命试验的基础上,提出用核概率密度估计法和多项式拟合法对触点初始接触电阻的分布特征进行分析,并研究了初始接触电阻与寿命的相关性。研究结果表明:各个继电器初始接触电阻的变化趋势不同,起伏不定。当初始接触电阻连续出现大电阻值后,即使接触电阻随后重新回到正常值,继电器仍会很快发生失效,寿命较短;继电器初始接触电阻拟合曲线的最大值与寿命之间呈现近似线性关系。     

基于等效弹簧式柔性连接的摆镜模态分析

针对空间稳像系统摆镜的柔性连接方式,提出了使用多个等效弹簧单元替代原有的柔性连接的有限元分析方式。对等效弹簧与原弹簧的弹性系数的对应关系进行了推导,使用等效弹簧的方式对摆镜系统完成了有限元建模,并进行了模态分析,计算出了一阶谐振频率。最后用非接触式激光共振检测系统对摆镜系统进行了检测,并将检测结果与模态分析结果进行了对比,结果表明,基于等效弹簧式柔性连接的摆镜有限元建模方法切实有效。为摆镜的后续设计提供建设性参考,对类似的工程分析具有十分重要的借鉴意义。     

铝电解电容器电极箔与引线间接触电阻的改进

铝电解电容器的内部电阻直接影响产品电性能,生产过程中必须降低并稳定电极箔与引线间的接触电阻。通过对铆接过程的分析和研究,提出改进铆接工艺的方法,即采用电极箔预冲孔的铆接工艺。实物测试表明,电极箔与引线间的接触电阻较工艺改进前降低8%～15%,其阻值离散度显著缩小,且后续制造工序及产品使用中的阻值也更稳定,有利于保证产品质量,延长产品寿命。     

Direct and quantitative understanding of the non-Ohmic contact resistance in organic and oxide thin-film transistors

We explore the device physics of thin film transistors (TFTs) with non-Ohmic contacts and develop a simple and fast method for evaluating the contact properties TFTs through output characteristics. Using one single output scan, the quantitative relationship between contact resistances and drain voltage were evaluated, revealing the property of interfacial injection at non-Ohmic contacts. This is demonstrated and validated in both TFT simulations and experiments employing inorganic and organic TFTs. The approach can be applied to general TFTs with arbitrary materials and configurations conveniently and enables faster and improved understanding of TFT operation and device physics.     

Explanation of high solar cell diode factors by nonuniform contact resistance

The current density–voltage ( J – V ) curve that characterises the performance of a solar cell is often extra rounded, resulting in reduced efficiency. When fitting to the standard one‐dimensional models, it is often found that the rounding cannot be fitted by the series resistance only. In these cases, the diode factor m or the depletion region saturation current density J _0DR (depending on the model used) is increased. This behaviour could not be explained so far; this paper discusses if a nonuniform contact resistance of the front side metallisation leads to an increase of m or J _0DR. The theoretical part of the investigation is the simulation of the curve for a cell with two regions with different contact resistance. It was found indeed that m or J _0DR is increased, while the series resistance is not increased as much as expected. The experimental part was the calculation of the J – V curve of a high‐ m solar cell with local contact resistances measured with the so‐called Corescan and the cell's resistanceless J – V curve as measured with the so‐called Suns‐ V _oc method. The calculated curve approximated the actual curve quite well, demonstrating in practice that high diode factors can be explained by nonuniform contact resistance. Copyright © 2004 John Wiley & Sons, Ltd.     

Measurement and analysis of contact resistance in wafer probe testing

When testing IC chips using a wafer probe card, maintaining a low and stable contact resistance is essential. However, the electrical contact between the probe and the bonding pad of the IC chip becomes unstable following repeated probing operations since particles from the chip surface gradually accumulate on the probe tip. The contamination caused by these particles causes the contact resistance to increase. Accordingly, this study develops an experimental procedure for investigating the effect of the particle contamination on the magnitude and stability of the contact resistance. Initially, an experiment is performed to establish the contact resistance between a clean tungsten probe and various specimen surfaces, i.e. aluminum, gold and copper, at various levels of overdrive. Subsequently, an experiment is conducted to investigate the accumulation of surface particles on the probe tip following multiple contacts of the probe with the wafer surface. The extent of particle contamination following 10,000, 30,000 and 50,000 contacts, respectively, is examined using a scanning electron microscope (SEM). The contact resistance of the contaminated probes is then measured at various levels of overdrive. The experimental results are then integrated to establish a suitable tradeoff between the contact resistance, the overdrive displacement, and the number of contacts.The results from the contact resistance experiment conducted using a clean tungsten probe indicate that the surface specimens with a lower resistively generate a lower contact resistance. For example, the contact resistance between the tungsten probe and the copper foil is approximately 100 mΩ, and becomes stable at an overdrive of 45 μm. However, the contact resistance increases with an increasing number of contacts. In general, the probe should be removed for cleaning following 30,000 contacts to ensure that a contact resistance of less than 1 Ω is maintained.