MnO2对Ba(Mg1/3Nb2/3)O3微观结构和微波介电性能的影响

研究了MnO2助烧剂对Ba(Mg1/3Nb2/3)O3陶瓷的微观结构和微波介电性能.MnO2可以有效地使Ba(Mg1/3Nb2/3)O3陶瓷的致密化温度由1550℃降低到1400℃左右.随MnO2掺量的增加,Ba(Mg1/3Nb2/3)O3陶瓷的12超晶格衍射峰的强度减弱,但是没有第二相出现.1400℃烧结4h陶瓷的晶粒尺寸在1.5μm左右.MnO2的掺入改善了Ba(Mg1/3Nb2/3)O3陶瓷的微波介电性能,MnO2掺量为1%mol的Ba(Mg1/3Nb2/3)O3陶瓷具有最好的微波介电性能εr≈31.5,Qf=68000,τf=3.11×10-5/℃,这可归功于陶瓷具有相当高的相对密度.     

低温烧结0.4CaTiO3-0.6Ca(Mg1/3Nb2/3)O3介电陶瓷的实验研究

对添加H3BO3-ZnO-R(BZR)玻璃实现0.4CaTiO3-0.6Ca(Mg1/3Nb2/3)O3(0.6CMNT)介质陶瓷的低温烧结进行了系统的研究。研究结果表明,在一定BZR玻璃添加量(1m%(质量分数)～5m%(质量分数),m是比例系数,且m>0)的条件下,陶瓷的最佳烧结温度均在950℃;在950℃烧结,BZR玻璃的添加量为2m%(质量分数)时,介电常数εr=47.26976,介电损耗tanδ=0.0098;BZR玻璃的添加量为3m%(质量分数)时,介电常数为εr=47.75029,介电损耗tanδ=0.0102。并且发现,添加适量的BZR玻璃,可以促进晶粒生长,但过量则会在烧结过程中产生过多的液相,且液相扩散严重,致使部分晶粒未能充分生长,而部分晶粒却异常长大,晶粒大小不均匀,影响陶瓷的介电性能。     

0.9BaTiO3-0.1Bi(Mg1/2Ti1/2)O3铁电薄膜制备及储能特性

电介质薄膜是通过介质极化方式存储静电能的一种材料,以其高功率密度和高充放电效率,在电子器件领域得到广泛应用。目前,储能密度较低和温度稳定性差仍是电介质储能薄膜的缺陷。本研究采用溶胶-凝胶法在Pt/Ti/SiO₂/Si衬底上制备了0.9BaTiO₃-0.1Bi(Ti_1/2Mg_1/2)O₃(0.9BT-0.1BMT)薄膜,通过引入BMT期望获得高储能密度及宽温度稳定性,并研究了退火温度对薄膜的相组成和微观形貌的影响。研究结果表明,退火温度过高会导致薄膜的致密性明显降低并伴随晶粒尺寸增大,750℃是最佳的退火温度。综合性能研究发现,1 kHz下,薄膜的室温介电常数为399,介电损耗为5.8%。薄膜在各测试频率下的介电温度稳定性满足X9R标准,△C/C_25℃≤±13.9%。通过Currie-Weiss关系计算得到薄膜的弛豫系数(Relaxor value)γ值为≈1.96,说明其具有明显的弛豫特性。储能特性研究显示,薄膜的室温储能密度W_rec...     

一种新型湿化学方法合成Ba(Mg1/3Ta2/3)O3纳米粉末的研究

介绍了一种工艺简便且成本较低的Ｂａ（Ｍｇ１／３Ｔａ２／３）Ｏ３（ＢＭＴ）纳米粉末的湿化学制 备方法．实验过程以Ｔａ２Ｏ５作为起始物，通过热碱反应与钽离子浓度控制法合成Ｔａ２Ｏ５·ｎＨ２Ｏ 胶体，然后与Ｂａ、Ｍｇ醋酸盐按化学计量比混合，经热处理制得ＢＭＴ纳米粉末．实验结果表 明该方法制备ＢＭＴ粉体所需的合成温度仅为８００℃；比传统固相反应法合成温度降低４００℃ 左右，平均粒径仅为７０ｎｍ此外所制得的纳米陶瓷材料具有较佳的低温烧结性能和微波介电 特性，比目前报道的醇盐系湿化学制备技术更具有实用性．     

Yb2O3的掺杂方式对Ba(Ti1-y)Zry)O3陶瓷介电性能的影响

在Ba(Ti1-yZry)O3中,Yb2O3的不同掺杂方式引起了材料性能的显著变化,采用Ba(Ti1-yZry)O3合成后Yb2O3的适量掺杂,陶瓷介温峰明显地移动,介电常数大幅度提高,获得了室温介电常数＞25000,1250℃左右烧成,符合Y5V标准的高介材料,合成后掺杂的Yb2O3,使材料介电常数提高,可能与施主掺杂引入的局域化电子有关,合成前掺杂Yb2O3的样品,介电常数较低,移峰效率偏小,可能是Yb的Ti位受主取代使施主引入的局域化电子得到补偿的结果。     

水热前驱体法制备钙钛矿相Pb(Ni1/3Nb2/3)O3(PNN)

以五氧化二铌(Nb2O5)为原材料通过络合反应合成了铌的前驱体溶液,并与醋酸铅(Pb(Ac)2),醋酸镍(Ni(Ac)2)混合,于200℃水热条件下进行预反应.水热预产物经进一步煅烧,成功获得了纯钙钛矿相PNN粉体.采用XRD和Raman分析,研究了水热时间,溶液pH值,煅烧温度等条件对PNN粉体相结构的影响,分析了粉体的相结构变化规律.结果表明,经过水热处理的粉体,在900℃煅烧后,形成具有钙钛矿结构PNN,特别是通过调整制备工艺,得到纯相的PNN粉体.     

Sm2O3掺杂(Ba0.7Ca0.3)TiO3-Ba(Zr0.2Ti0.8)O3无铅压电陶瓷的制备与性能

采用固相合成法制备了Sm2O3掺杂的(Ba0.7Ca0.3)TiO3-Ba(Zr0.2Ti0.8)O3(BCZT)无铅压电陶瓷.借助XRD、SEM等手段对该陶瓷的显微结构与电性能进行了研究.结果表明,Sm2O3的掺杂降低了BCZT无铅压电陶瓷的烧结温度并使居里温度点Tc从85℃提高到95℃.当Sm2O3掺杂量为0.02wt%～0.1wt%时,样品具有典型ABO3型钙钛矿结构.Sm2O3掺杂量为0.02wt%时,所得陶瓷样品具有最优综合电性能,其压电常数d33、机电耦合系数kp、机械品质因子Qm、介电损耗tanδ和介电常数εr分别为590 pC/N、0.52、43、1.3%和3372.     

(1-x)Pb(Fe2/3W1/3)O3-xPb(Mg1/2W1/2)O3多铁性材料的有序结构及磁性能

以无机盐为前驱体,利用溶胶-凝胶法固溶合成了(1-x)Pb(Fe2/3W1/3)O3-xPb(Mg1/2W1/2)O3多铁性固溶体.XRD分析表明,在0≤x≤1.0的掺杂范围内,700℃煅烧所得产物都具有钙钛矿结构;x=0时得到的纯Pb(Fe2/3W1/3)O3为长程无序结构,x=1.0时可获得完全有序的纯Pb(Mg1/2W1/2)O3相,其单胞为Pb(Fe2/3W1/3)O3单胞的2倍;当0相似文献   

一种新型湿化学方法合成Ba(Mg1/3Ta2/3)O3纳米粉末的研究

介绍了一种工艺简便且成本较低的Ba(Mg1/3Ta2/3)O3(BMT)纳米粉末的湿化学制备方法.实验过程以Ta2O5作为起始物,通过热碱反应与钽离子浓度控制法合成Ta2O5@nH2O胶体,然后与Ba、Mg醋酸盐按化学计量比混合,经热处理制得BMT纳米粉末.实验结果表明该方法制备BMT粉体所需的合成温度仅为800℃,比传统固相反应法合成温度降低400℃左右,平均粒径仅为70nm.此外所制得的纳米陶瓷材料具有较佳的低温烧结性能和微波介电特性,比目前报道的醇盐系湿化学制备技术更具有实用性.     

La(Mg1/2Ti1/2)O3粉末的EDTA凝胶燃烧法合成研究

利用EDTA凝胶燃烧方法直接合成了单相的La(Mg1/2Ti1/2)O3粉末.通过调整La(NO3)3,Mg(NO3)2·6H2O,Ti(OC4H9)4和EDTA的溶液的pH值,获得了透明的凝胶.在250℃加热时,凝胶燃烧,直接转化为含少量炭化物的La(Mg1/2Ti1/2)O3粉末.利用XRD、FT-IR,SEM和激光粒径分析等技术表征了获得的粉末.     

Synthesis, structure and dielectric properties of a rare earth double perovskite oxide Ba2CeTaO6

A rare earth double perovskite oxide barium cerium tantalate, Ba₂CeTaO₆ (BCT) is synthesized by solid-state reaction. The X-ray diffraction pattern of the sample at room temperature (25 °C) shows monoclinic structure, with the lattice parameters, a = 9.78 Å, b = 9.02 Å and c = 4.27 Å and β = 93.8°. A scanning electron micrograph shows the formation of grains with average size ∼ 2 μm. Impedance spectroscopy is applied to investigate the ac electrical properties of BCT in a temperature range from 303 to 673 K and in a frequency range from 100 Hz to 1 MHz. Complex-impedance-plane plots show grain contribution for BCT. The frequency-dependent electrical data are analyzed in the framework of the conductivity and modulus formalisms. The frequency-dependent conductivity spectra follow a power law. The conductivity at 110 Hz varies from 3.5 × 10⁻⁷ S m⁻¹ to 1.2 × 10⁻² S m⁻¹ with increasing temperature from 303 to 673 K, respectively. The scaling behaviour of M″ and Z″ suggest that the relaxation describes the same mechanism at various temperatures.     

Dielectric properties and high-temperature dielectric relaxation of Ba3Ti4Nb4O21 ceramic

A₃B₈O₂₁ hexagonal perovskite-like Ba₃Ti₄Nb₄O₂₁ ceramics were synthesized by a conventional solid-state reaction technique, which exhibit high dielectric constant at room temperature. A high-temperature dielectric relaxation was observed in frequency range from 40 Hz to 1 MHz above the Curie temperature. The real and imaginary parts of the impedance (Z′ and Z″) as functions of frequency indicate the presence of two relaxation processes at high temperatures, which are attributed to grain and grain boundary responses. The conductivities of both grain and grain boundary obey the Arrhenius law with activation energies of 1.04 eV and 1.27 eV, respectively. The dielectric relaxation processes are related to the oxygen vacancies inside the ceramic, indicating that the Q × f value of Ba₃Nb₄Ti₄O₂₁ might be improved via eliminating oxygen vacancies.     

Influence of Fabrication Parameters on the Phase Formation and Dielectric Properties of CaCu3Ti4O12 Ceramics

The giant dielectric permittivity materials CaCu 3 Ti 4 O 12(CCTO) were synthesized by conventional solid-state reaction techniques.X-ray diffraction and Raman scattering for the powder indicate that the powder calcined at 950 C for 12 h has been completely transformed into the purer CCTO phase.Furthermore,the morphology and size of the grains of the ceramics sintered at 1090 C in the dwell time range from 0 to 26 h were observed by scanning electron microscopy(SEM).Dielectric properties of the polycrystalline CCTO ceramics were characterized in a broad frequency range(100 Hz-1 MHz) and at a temperature ranged from 300 to 500 K.The longer sintering time may lead to more defect structures and the enhanced conductivity,also leads to substantial improvements in permittivity.Grain size and density differences were not large enough to account for the enhancement in dielectric permittivity.Based on the observations,it is believed that the primary factor affecting dielectric behavior is the development of internal defects.The CCTO ceramics sintered at 1090 C for 15 h exhibit lower dielectric loss(～0.05) near room temperature,and the dielectric relaxation behavior above 1 kHz was observed to follow the Arrhenius law.The activation energy(E a) of 0.65 eV indicates that the doubly ionized oxygen vacancies in the grain boundaries are responsible for the dielectric relaxation of the CCTO ceramics.     

The ionic conductivity and dielectric properties of Ba1−xSnxF2 solid solutions prepared by mechanochemical milling

Solid solutions of Ba_1−xSn_xF₂ fluoride ion conductors, with x = 0.1–0.4, have been synthesized by the mechanochemical milling technique for the first time. All of the prepared materials crystallize in the cubic fluorite-type structure, which indicates that the solid solution can be synthesized in the studied composition range by the mechanochemical milling technique at ambient temperature and pressure. The ionic conduction of the investigated materials has been studied by impedance spectroscopy. The ionic conductivity increased considerably, by up to six orders of magnitude compared to pure un-milled BaF₂, with increasing SnF₂ content. From the analysis of the conductivity spectra of the investigated materials it is found that the concentration of mobile fluoride ions is independent of temperature with almost the same values for the investigated materials. The present results suggest that the enhanced mobility of mobile ions is the origin of the higher ionic conductivity. The dielectric properties and the associated relaxation phenomena of the current materials are also described.     

Effect of Sn4+ B-Site Substitution on the Microstructure and Dielectric Properties of Ba(Mg1/3Ta2/3)O3 Microwave Ceramics

1.IntroductionRecent progress of microwave telecommunication de-mands the development and application of a variety ofmicrowave dielectric materials.The materials with highdielectric constant(ε),high quality factor(Q)and smalltemperature coefficient of resonant frequency(TCF)haveattracted the greatest interest of researchers.The com-pounds Ba(B'1/3B"2/3)O3(B'=Mg,Zn,Ni,etc.B"=Ta,Nb,etc.)with complex perovskite structure exhibit veryhigh Q value at microwave frequencies greaterthan10GHz.…     

Dielectric relaxation in complex perovskite oxide In(Ni1/2Zr1/2)O3

The dielectric study of indium nickel zirconate, In(Ni_1/2Zr_1/2)O₃ (INZ) synthesized by solid state reaction technique is performed in a frequency range from 500 Hz to 1 MHz and in a temperature range from 303 to 493 K. The X-ray diffraction analysis shows that the compound is monoclinic. A relaxation is observed in the entire temperature range as a gradual decrease in ?′(ω) and as a broad peak in ?″(ω) in the frequency dependent real and imaginary parts of dielectric constant, respectively. The frequency dependent electrical data are analyzed in the framework of conductivity and electric modulus formalisms. The frequencies corresponding to the maxima of the imaginary electric modulus at various temperatures are found to obey an Arrhenius law with activation energy of 0.66 eV. The Cole-Cole model is used to study the dielectric relaxation of INZ. The scaling behaviour of imaginary part of electric modulus suggests that the relaxation describes the same mechanism at various temperatures. The frequency dependent conductivity spectra follow the universal power law.     

AC Conductivity and Dielectric Relaxation Behavior of Sol-gel BaxSr1-xTiO3 Thin Films

BaxSr1-xTiO3 sol-gel thin films with x=0.5, 0.7 and 0.8 have been fabricated as Al/BST/Pt capacitor. The AC conductivity and dielectric properties over a frequency rang of 10 Hz and 1 MHz have been studied in order to explore the ion dynamics and relaxation mechanisms in the films. The frequency dependent conductivity plots show three regions of conduction processes. Dielectric results show that ε at low frequencies increases as Sr content decreases, whereas at high frequencies, it shows opposite variation, which is attributed to the dipole dynamics. The electric modulus plots reveal the relaxation peaks which are not observed in the ε plots and the contribution of the grains, grain boundaries and electrode to the relaxation mechanisms.     

Structural and dielectric properties of A(Fe1/2Ta1/2)O3 [A = Ba, Sr, Ca]

The complex perovskite oxide barium iron tantalate (BFT), BaFe_1/2Ta_1/2O₃, strontium iron tantalate (SFT), SrFe_1/2Ta_1/2O₃ and calcium iron tantalate (CFT), CaFe_1/2Ta_1/2O₃ are synthesized by a solid-state reaction technique. Rietveld refinement of the X-ray diffraction data of the samples shows that BFT and SFT crystallize in cubic structure, with lattice parameter a = 4.06 Å for BFT and 3.959 Å for SFT, whereas CFT crystallizes in orthorhombic structure having lattice parameters a = 5.443 Å, b = 5.542 Å and c = 7.757 Å. Fourier transform infrared spectra show two primary phonon modes of the samples at around 450 cm⁻¹ and 620 cm⁻¹. The compounds show significant frequency dispersion in its dielectric properties. The complex impedance plane plots of the samples show that the relaxation (conduction) mechanism in these materials is purely a bulk effect arising from the semiconductive grains. The relaxation mechanism of the samples is modelled by Cole-Cole equation. The frequency dependent conductivity spectra are found to follow the power law.     

Dielectric relaxation of NdMnO3 nanoparticles

The neodymium manganate (NdMnO₃) nanoparticles are synthesized by the sol–gel process. The phase formation and particle size of the sample are determined by X-ray diffraction analysis and transmission electron microscopy. The band gap of the material is obtained by UV–visible absorption spectroscopy using Tauc relation. Dielectric properties of the sample have been investigated in the frequency range from 42 Hz to 1 MHz and in the temperature range from 303 K to 573 K. The dielectric relaxation peaks are observed in the frequency dependent dielectric loss spectra. The Cole–Cole model is used to explain the dielectric relaxation mechanism of the material. The complex impedance plane plot confirms the existence of both the grain and grain-boundary contribution to the relaxation. The temperature dependence of both grain and grain-boundary resistances follow the Arrhenius law with the activation energy of 0.427 and 0.431 eV respectively. The frequency-dependent conductivity spectra follow the power law.     

Structural and Dielectric Properties of ZnO Added (Na_(1/2)Bi_(1/2))TiO_3 Ceramics

Structural and dielectric properties of polycrystalline samples of lead-free(1-x)(Na1/2Bi1/2)TiO3-xZnO,prepared using a high-temperature solid-state reaction method,were investigated in the composition range of 0≤x≤0.10.Rietveld analyses of X-ray diffraction data indicated the formation of a single-phase hexagonal structure with R3c symmetry.Williamson-Hall approach was applied to estimate the apparent particle size and lattice strain of the compounds.Temperature dependence of dielectric constant showed that the addition of ZnO to(Na1/2Bi1/2)TiO3 shifted the phase transition temperature towards higher side,a property favourable for practical applications of these ceramics.Further,temperature dependent permittivity data provided low temperature coefficient of capacitance(TCC <8%) up to 100 ℃.Furthermore,a decrease in the value of dielectric loss with an increase in ZnO content was observed.