Size-strength effects in sapphire and silicon nitride whiskers at 20° C

Tensile tests at 20° C have been carried out on seventy-three sapphire whiskers and on seventeen silicon nitride whiskers. The sapphire whiskers were of 0001, 1¯120, 10¯10, and 10¯11 orientations, while the silicon nitride whiskers were 0001, 11¯20, and 10¯13. Tensile strengths were in the range 45 to 1500 kg/mm², and deformation was found to be purely elastic. The tensile strength data have been analysed and fitted to empirical equations describing the effect of size on strength for different orientations. These empirical equations have been used to deduce possible fracture nucleation mechanisms. It is concluded that, in the case of 0001 sapphire whiskers, fracture nucleation may be due to dislocation pile-ups or interactions, while in the other cases a Griffith flaw mechanism is probably applicable.     

Microstructure and crystallographic texture of rolled polycrystalline Fe3Al

An imperfectly B₂ ordered Fe₃Al aggregate was cast, thermomechanically hot rolled and finally annealed at 870 K. Subsequently, the specimen was rolled at 800–830 K to a strain of 80%. The microstructure and the crystallographic texture of the rolled polycrystalline sample was investigated within the range =20–80%. The microstructure consisted of flat, elongated grains. In numerous grains straight slip lines were detected. Even after =80% recrystallization was not observed. The rolling texture of Fe₃Al considerably deviates from that of non-ordered body centered cubic (b.c.c.) alloys and pure b.c.c. metals. The {111}uvw texture fibre (7-fibre) was very pronounced, while the {hkl}110 fibre (-fibre) was very weak. The {112}110 orientation which represents the strongest texture component in non-ordered b.c.c. alloys did not occur at all. The textures are discussed in terms of the {110}111, {112}111, {112}111 and {123}111 slip systems. The contribution of crystallographic slip of the various types of potential slip systems was simulated by means of the Taylor theory.     

Anisotropy in the hardness and friction of calcium fluoride crystals

Anisotropy in the Knoop indentation hardness and the friction of diamond cones on calcium fluoride crystals has been investigated at experimental temperatures from 20 to 300° C. It is shown that the directions of minimum and maximum indentation hardness, on the (001) plane, are 110 and 100 respectively whilst the 1¯10 are harder than the 11¯2 directions on the (111) plane. Also, the sliding friction in the (001) plane is greatest in the 110 directions and least in the 100 and, on the (111) cleavage plane, [¯1¯12] sliding leads to higher friction than [11¯2]. The nature of anisotropy, for both hardness and friction measurements, does not change over the experimental temperature range covered in this work. Observations on the resultant deformation are made and these anisotropic properties are explained in terms of the effective resolved shear stresses developed on the {100} 011 primary slip systems at all experimental temperatures.     

The mechanical behaviour of cuprous oxide

The stress-strain behaviour under compresion at constant strain rate of single crystals (051 and 122) compression axis) and polycrystalline samples of cuprous oxide have been examined at room temperature and hydrostatic pressure up to 12 kb and at atmospheric pressure and high temperature up to 600° C. At high environmental pressure, plastic flow occurs at 6 kb. At high temperatures and one atmosphere, extensive plastic deformation was observed after 500° C. The resultant slip planes were of the {110} and {100} types. Transmission electron microscopy of thin foils prepared from deformed specimens shows that the Burgers' vectors of the glide dislocations are of the 111, 110 and 100 types.     

Electron diffraction study of superlattices and orientation variants in Ca3SrAl6SO16

Samples having the nominal composition of Ca₃SrAl₆SO₁₆ were sintered at 1380 °C and analysed by electron diffraction. The frequent appearances of forbidden and satellite reflections in this compound imply the presence of a number of basal and nonbasal superlattices so that the microstructure of this cement clinker was characterized by various superstructures including one-, two- and even three-dimensional superstructures along the 0 0 1, 1 1 0, 1 1 2, 1 1 4 or 2 2 1, 0 1 3 and 1 2 3 directions with repeat periods of two or three times of that of basic one, respectively, and intergrowth of these. Various domain structures with 90°, 120° and 48.2°, etc., orientation relationships were also detected in these superstructures and the total number of these orientation variants related to the symmetry elements lost in the process of phase transformation, can be predicted according to the conclusions of Van Tendeloo and Amerlinckx, or they are equal to the number of those unique planes in the matrix.     

Deformation and recrystallization textures of copper single crystals and bicrystals

Recrystallization textures in rolled copper specimens have been investigated so as to elucidate the mechanisms of cube texture formation. The specimens are single crystals with the orientations corresponding to the main components of the rolled textures, such as {112}111,{110}112, etc. and bicrystals consisting of such oriented crystals. The cube texture was not observed in any single crystal specimens, but observed in only two bicrystal specimens with {112}/111{100}001 and {110}112/{100}001 orientations. The formation of cube texture seems to require the existence of a cube oriented region in the deformed state, and the favourable oriented matrix to allow the growth of such nuclei.     

Cathodoluminescence of Cd4SiS6 , Cd4SiSe6 , and Si-Doped CdS, CdSe, and CdTe Crystals

CdS, CdSe, and CdTe single crystals were vapor-phase-doped with the corresponding silicon chalcogenides under nearly equilibrium conditions. Cathodoluminescence studies revealed that the Si dopant produced new luminescence centers in the crystals. The cathodoluminescence spectra of Cd₄SiS₆and Cd₄SiSe₆crystals were measured. Metastable, sphalerite CdSSi and CdSeSi films were grown under highly nonequilibrium conditions. The maximum of edge emission in their spectra was redshifted as compared to the stable materials. The CdSSi and CdSeSi crystals were shown to be photosensitive.     

Dislocations in extruded Co-49.3at% Al

Polycrystalline Co-49.3at% Al which had been extruded at 1505 K was examined using transmission electron microscopy. Diffraction contrast analysis showed that b = 100 as well as b = 111 dislocations contribute to elevated temperature deformation in CoAl. Therefore, it was concluded that sufficient slip systems exist in CoAl to allow for general plasticity in the absence of diffusional mechanisms. Since no examples of b = 110 dislocations were found, the importance of 110{1¯10} slip in CoAl at 1505 K is unclear. Dislocations of the type b = 001 were observed on both {110} and {100} planes while b = 111 dislocations were observed on {1¯10} planes.     

A transmission-electron-microscopy study of a face-centred-cubic phase in an Al-Li-Cu-Mg-Zr alloy

Icosahedral T₂ phases can form either by solid-state precipitation or during solidification in Al-Li-Cu-Mg alloys. The T₂ phase forming during solidification can transform to an R phase at high annealing temperatures. The T₂ phase forming by solid-state precipitation coexists with the Y phase, which has a face-centred cubic (f.c.c.) structure with lattice parameter a2.0 nm and can form microtwins with the twin plane of (111). The orientation relationships between the C phase and the T₂ phase are: i¯5Y0 1 1, Y1 1 3; i¯3Y1 1 1, Y1 2 3, Y1 1 5; Y2 3 5; i2Y0 1 1, Y1 1 1, Y1 1 2, Y1 1 3, Y1 1 5.     

Relationship between deposition and recrystallization textures of copper and chromium electrodeposits

The 100, 111 and 110 textures of copper electrodeposits obtained from copper sulfate baths changed to the 100, 100 and textures, respectively, after recrystallization. The textures of chromium electrodeposits obtained from the standard Sargent bath remained unchanged after recrystallization. The results are in agreement with the prediction of the strain energy release maximization model, in which the recrystallized grains orient themselves so that their minimum elastic modulus direction can be parallel to the absolute maximum internal stress direction due to dislocations in the non-recrystallized grains.     

Deformation of single crystals of gallium arsenide

Deformation of single crystals of gallium arsenide is reported in bend and tension up to 1000° C whilst maintaining stoichiometry in an arsenic atmosphere. Surface defects and impurity segregation are shown to be dislocation sources. The dislocation density is low enough, however, to show large yield drops which are analysed in detail. Strains of 39% are possible. The activation energy for dislocation movement is increased by heat-treatment owing to an increase in point defect population.Electron microscopy shows that the predominant slip systems are {111} 110 and the majority of dislocations have b=a/2 110, the axes lying along 110 and 112 directions. Sub-cell formation occurs with sub-boundaries lying along 110 directions.     

Transport Properties of TlInSe2〈Ln〉 (Ln = Eu, Sm, Yb)

The electrical conductivity and Hall coefficient of TlInSe₂Ln (Ln = Eu, Yb, Sm) were measured between 300 and 900 K. The results were used to determine the band gap, ionization energy of impurities, conductivity type, and Hall mobility of charge carriers in TlInSe₂Ln. The temperature at which the Hall coefficient changes sign is shown to increase with doping level.     

Texture study of two molybdenum shaped charge liners by neutron diffraction

The textures of two different conical shaped liners, fabricated by the same forging processes from arc-cast and powder-sintered ingots, were investigated by using neutron-diffraction measurements and three-dimensional orientation-distribution-function (ODF) analysis. The major textures of both liners could be described by the (1 1 1) uv w and (1 0 0) u v w type. The two liners had essentially identical texture at the 8 cm position (measured from the base of the cone) with strong sheet-type texture components, i.e. (1 1 1) ¯1 0 1, (1 1 1) ¯1 1 0 and (1 0 0) 0 1 1. However, the dominant textures at the 3 cm positions were 1 1 1 and 1 0 0 fibre textures with the fibre axes oriented parallel to the normal direction in both liners. A strong cube texture was observed at the 3 cm position of the arc-cast liner but it was not observed for the powder-sintered liner. The arc-cast liner had a generally higher degree of texture than the powder-sintered liner.     

Photosensitive Centers in CdTe〈Ge〉, CdTe〈Sn〉, and CdTe〈Pb〉

The spectral and temperature dependences of photoconductivity in CdTePb crystals under band-gap and combined excitation were studied at photon energies in the range 0.53–1.7 eV and temperatures from 80 to 300 K. The high photosensitivity of the crystals and the observed IR and temperature quenching of photoconductivity indicate that, just as in CdTeGe and CdTeSn, the recombination processes in CdTePb are dominated by deep centers with drastically different capture cross sections for electrons and holes. Some parameters of the centers are determined. The results suggest that the likely defect species responsible for the high photosensitivity of CdTePb is an acceptor complex consisting of a Cd vacancy and a metal (Ge, Sn, Pb) ion on the Cd site: (V ^2– _CdM⁺)^–/0.     

Atom positions in the R-phase unit cell in TiNi shape memory alloy

A crystallographic analysis of the atom positions in the unit cell of the R-phase of the TiNi shape memory alloy has been performed. In addition to a homogeneous shape change the atoms are found to shuffle in the [111]_B2 and –211_B2 directions during the B2 to R-phase transformation. The origin of these shuffles is found to be a complex interaction between 1101–10 transverse acoustic and 111 longitudinal acoustic soft phonon modes.     

Observation of dislocations and subboundaries in the optically active crystal Bi12GeO20 with reflection birefringence topography

The birefringence topography of a Bi₁₂GeO₂₀ single crystal which has a strong natural optical activity is presented. The natural optical activity of the crystal may be completely compensated by reflection polarised light microscopy so that the birefringence images of dislocations and subboundaries are observed. The Burgers' vectors of dislocations were found to be of the types 1/2 1 1 1, 1 0 0 and 1 1 0 and dislocations which form subboundaries are also of these types.     

The plastic behaviour of 〈100〉 and 〈111〉 textured polycrystalline metals during simultaneous torsion and extension

On the basis of computer-calculated yield functions, the work hardening of 100 textured Cu-0.64 at % Co-0.48 at % Si and 111 textured polycrystalline copper wires were studied by simultaneous torsion and extension and by pure extension. Representing the work hardening by resolved shear stress-resolved shear strain curves, the rate of hardening is significantly lower for torsion than for pure extension. This behaviour is explained by the operation of different slip systems activated in the two modes of deformation. In the 100 textured Cu-Co-Si wires, heterogeneous plastic deformation was observed beyond about 80% shear strain.     

Microstructures associated with stress relaxation around indentations in Y and Nd based melt textured ceramic superconductors

Microstructures associated with room temperature indentation subsequently annealed at 450°C have been analyzed by TEM in Y and Nd based melt textured ceramic superconductors. It is shown that stress relaxation around indentations occurs by the nucleation of stacking faults with R = 1/6031 displacement vector in Y based material. Differently relaxation occurs in NdBaCuO by the nucleation of perfect dislocations with 100 Burgers vectors which can be locally dissociated. A model is proposed to explain these microstructures and is related to the difference in energies of stacking faults with R = 1/6031 displacement vector in these compounds.     

Thermally Stimulated Currents in Si〈P,Au〉: Exponential Heating Profile

The equations of thermally stimulated currents were derived for an exponential heating profile. The applicability of this approach was checked using experimental data for SiP,Au. The ionization energies of two trap levels in SiP,Au were determined to be 0.25 and 0.40 eV.     

Etching of MgO crystals in acids: surface micromorphology

Several etchants based on simple acids are proposed for revealing dislocations on {100}, {110} and {111} faces of MgO single crystals. Some acids under different etching conditions are shown to produce etch pyramids at decorated dislocations, while etch hillocks, spherulites and dendrites are formed under different conditions. With increasing concentration of H₂SO₄, 110 pits, circular pits, 100 pits, 110 pyramids as well as 100 pits, dendrites and spherulites, and hillocks are formed in that order. Etching characteristics of other acids also showed a more or less identical trend. The observations are interpreted with the assumption that with increasing concentration of acid, an effective undersaturation and later supersaturation is developed very close to the dissolving crystal face. The chemistry of the dissolution process is also discussed.