共查询到18条相似文献,搜索用时 62 毫秒
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光学邻近校正改善亚微米光刻图形质量 总被引:3,自引:0,他引:3
论述了近年来光学邻近校正技术的进展,讨论了各种行之有效的改善光刻图形质量的校正方法,并分析了邻近效应校正是未来光刻技术中的地位和作用。 相似文献
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成品率驱动的光刻校正技术 总被引:1,自引:0,他引:1
光刻校正技术已成为超深亚微米下集成电路设计和制光刻校正技术的基本原理以及在IC设计中使用这些技术需要注意的问题,为可制造性设计提供有价值的指导. 相似文献
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A new method for determining proximity parameters α,β,and η in electron-beam lithography is introduced on the assumption that the point exposure spread function is composed of two Gaussians.A single line is used as test pattern to determine proximity effect parameters and the normalization approach is adopted in experimental data transaction in order to eliminate the need of measuring exposure clearing dose of the resist.Furthermore,the parameters acquired by this method are successfully used for proximity effect correction in electron-beam lithography on the same experimental conditions. 相似文献
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Jong Rak Park Hyun Su Kim Jin‐Tae Kim Moon‐Gyu Sung Won‐Il Cho Ji‐Hyun Choi Sung‐Woon Choi 《ETRI Journal》2005,27(2):188-194
We report on the improvement of critical dimension (CD) linearity on a photomask by applying the concept of process proximity correction to a laser lithographic process used for the fabrication of photomasks. Rule‐based laser process proximity correction (LPC) was performed using an automated optical proximity correction tool and we obtained dramatic improvement of CD linearity on a photomask. A study on model‐based LPC was executed using a two‐Gaussian kernel function and we extracted model parameters for the laser lithographic process by fitting the model‐predicted CD linearity data with measured ones. Model‐predicted bias values of isolated space (I/S), arrayed contact (A/C) and isolated contact (I/C) were in good agreement with those obtained by the nonlinear curve‐fitting method used for the rule‐based LPC. 相似文献
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