微型填充式气相色谱柱的制备（英文）

为了分离永久性气体及低碳轻化合物,基于MEMS技术,研究制备了一种微型填充式的气相色谱柱。为了增加色谱柱的长度以及深宽比,色谱柱的沟道制备采用了激光刻蚀技术,这种技术可以方便的在玻璃基底上刻蚀出深沟道,这是其他化学腐蚀技术无法比拟的。研制的色谱柱其沟道横截面为1.2mm(深度)×0.6mm(宽度),深宽比为2∶1。实验结果表明,这种微型填充柱,具有较大的样品容量,能很好的实现CO和SO_2的分离。     

基于微机电系统技术的高性能集成型微富集器（英文）

由于大部分环境样品的浓度非常低,为了实现其直接检测,提出将一种集成化的微型富集器应用到色谱系统中。富集器可实现色谱系统的进样与样品富集,能将色谱仪的检测限提高1~2个数量级。设计的富集器采用了高容量4平行通道结构,沟道内填充了高吸附率的Tenax-TA吸附材料,来实现对环境样品中挥发性有机化合物组分的富集。此外,为了密闭热解吸过程中所释放的组分,在微型富集器后集成了微型阀。试验结果表明,研制的微型富集器取得了15倍以上的富集因子。而且,通过微阀的控制,色谱峰的拖尾和峰展宽得到了有效的控制。因此,该微型富集器可广泛应用到环境样品的快速检测中,提高各检测器对复杂环境的适应能力。     

基于微机电系统技术的高性能集成型微富集器

由于大部分环境样品的浓度非常低, 为了实现其直接检测, 提出将一种集成化的微型富集器应用到色谱系统中。富集器可实现色谱系统的进样与样品富集,能将色谱仪的检测限提高1~2个数量级。设计的富集器采用了高容量4平行通道结构,沟道内填充了高吸附率的Tenax-TA吸附材料,来实现对环境样品中挥发性有机化合物组分的富集。此外,为了密闭热解吸过程中所释放的组分,在微型富集器后集成了微型阀。试验结果表明,研制的微型富集器取得了15倍以上的富集因子。而且,通过微阀的控制,色谱峰的拖尾和峰展宽得到了有效的控制。因此,该微型富集器可广泛应用到环境样品的快速检测中,提高各检测器对复杂环境的适应能力。     

电共轭流体微型泵的实验研究（英文）

为了解决MEMS技术制备具有超厚、高深宽比电极结构的射流发生器中三角柱电极尖端部分出现的弧形缺陷以及脱模时缝隙电极易脱落等问题,提高射流发生器的制作质量以及电共轭流体微型泵的输出性能。结合理论分析与反复试验提出了一系列改进措施:优化涂胶、热处理、显影等工艺的参数以及缝隙电极的形状,采用新型KMPR光刻胶去除方法等。通过应用上述方法获得的射流发生器中,三角柱电极-缝隙电极对厚度约500μm,深宽比高,三角柱电极尖端结构完整,缝隙电极附着率有很大提高。同时,利用制备的射流发生器,设计、装配了电共轭流体微型泵的样机。     

电共轭流体微型泵的实验研究

为了解决MEMS技术制备具有超厚、高深宽比电极结构的射流发生器中三角柱电极尖端部分出现的弧形缺陷以及脱模时缝隙电极易脱落等问题,提高射流发生器的制作质量以及电共轭流体微型泵的输出性能。结合理论分析与反复试验提出了一系列改进措施:优化涂胶、热处理、显影等工艺的参数以及缝隙电极的形状,采用新型KMPR光刻胶去除方法等。通过应用上述方法获得的射流发生器中,三角柱电极-缝隙电极对厚度约500 m,深宽比高,三角柱电极尖端结构完整,缝隙电极附着率有很大提高。同时,利用制备的射流发生器,设计、装配了电共轭流体微型泵的样机。     

飞秒激光辅助刻蚀制备蓝宝石光栅(特邀)

利用飞秒激光辅助刻蚀技术,在蓝宝石表面实现了周期、占空比及高度可调的光栅结构。解决了飞秒激光加工硬脆材料时表面质量较差、碎屑堆积导致的加工精度降低和难以制备深结构的问题。蓝宝石光栅结构的粗糙度从78 nm(激光直写后)降低到了7 nm(干法刻蚀后),实现了周期为800 nm光栅,以及深宽比为4的蓝宝石微结构的制备。飞秒激光辅助刻蚀技术能够制备蓝宝石表面高平滑光栅,并对光栅各级次衍射效率进行提升。     

基于光刻工艺的阶跃滤光片式微型分光器件研制

为了消除机械掩模的尺寸限制和阴影效应,采用基于光刻掩膜的组合刻蚀法来制备阶跃滤光片,并成功地实现了16×1通道阶跃滤光片式微型分光器件的制备,该分光器件中滤光片单元的宽度只有90 μm,总体尺寸不到2 mm.各滤光片通道分布在632.4 nm到739.6 nm之间,带宽均小于2.9 nm,透过率均高于70%.这样的阶跃滤光片最小单元尺寸可达微米量级,阴影效应可减小到微米甚至亚微米量级,与电荷耦合器件(CCD)完全匹配,可以作为微型分光器件来构建应用于空间等领域的微型光谱系统,从而促进相应光谱仪器的微型化.     

Mn掺杂Pb(In_(1/2)Nb_(1/2))O_3-Pb(Mg_(1/3)Nb_(2/3))O_3-PbTiO_3单晶微米尺度压电阵列的制备与铁电畴结构研究

超声探头是高端医学超声诊疗设备的核心元件,由弛豫型铁电单晶制备的新型压电器件可显著提高其性能.由于高阵元密度阵列技术与微机电系统迅速发展,传统切割填充法刀缝过宽,难以降低阵元尺寸,无法提高阵元密度,更不利于高分辨率及高频率的应用需求.采用紫外光刻-深反应离子刻蚀工艺的微机械制备方法,可以降低缝宽、提升阵列密度.制备了基于新型、高性能弛豫铁电单晶—Mn离子掺杂0.3Pb(In_(1/2)Nb_(1/2))O_3-0.4Pb(Mg_(1/3)Nb_(2/3))O_3-0.3PbTiO_3 (Mn-PIMNT)的微米尺度压电阵列.研究了紫外光刻工艺参数、深反应离子刻蚀工艺参数对压电阵列形貌的影响规律,得到了不同沟道深度与不同压电阵元形状的形成机制以及Mn-PIMNT单晶的刻蚀速率与天线功率、偏置功率及刻蚀气体比例之间的关系规律.得到压电阵列阵元尺寸小于10μm,沟槽深度大于20μm,沟槽宽度小于5μm,侧壁角度高于87°.通过压电力显微镜研究了微米尺度压电阵元的铁电畴结构及电场效应调控.与传统切割填充法相比,本文的加工方法不存在刀缝过宽,可确保单晶晶向,促进了高频率压电单晶复合材料、高密度超声换能器阵列以及新型压电微机械系统的发展.     

气相色谱法测定环境空气中三甲胺

采用4%聚乙二醇(PEG)-20M 1%KOH和GXD-401为固定相,2m×3mm玻璃填充柱分离三甲胺,FID检测.结果表明:在柱温140℃,进样口温度180℃,检测器温度180℃,氮流量30mL·min-1时,平均回收率为100.13%,相对标准偏差为3.0%.该方法有较高灵敏度和良好的线性关系.     

氨基甲酸酯类农药残留的加压毛细管电色谱法测定

采用加压毛细管电色谱 -紫外检测法 ,建立了速灭威、克百威和残杀威三种氨基甲酸酯类农药的同时分离检测方法。采用反相 C18毛细管电色谱柱 (3μm,2 0 0 mm× 75 μm I.D.) ,以乙腈∶ PBS(5 mmol/ L,p H6 .5 0 ) =30∶ 70 (V/ V)为流动相 ,检测波长 2 2 0 nm,流速 10 0 μL/ min,柱压 6 .9MPa,在电色谱柱末端施加10 .0 k V负电 ,三种物质在 10 min内基线分离。该法用于蔬菜中速灭威、克百威和残杀威的残留分析研究 ,效果令人满意     

Wafer-level manufacturing technology of glass microlenses

In high-tech products, there is an increasing demand to integrate glass lenses into complex micro systems. Especially in the lighting industry LEDs and laser diodes used for automotive applications require encapsulated micro lenses. To enable low-cost production, manufacturing of micro lenses on wafer level base using a replication technology is a key technology. This requires accurate forming of thousands of lenses with a diameter of 1–2 mm on a 200 mm wafer compliant with mass production. The article will discuss the technical aspects of a lens manufacturing replication process and the challenges, which need to be solved: choice of an appropriate master for replication, thermally robust interlayer coating, choice of replica glass, bonding and separation procedure. A promising approach for the master substrate material is based on a lens structured high-quality glass wafer with high melting point covered by a coating layer of amorphous silicon or germanium. This layer serves as an interlayer for the glass bonding process. Low pressure chemical vapor deposition and plasma enhanced chemical vapor deposition processes allow a deposition of layer coatings with different hydrogen and doping content influencing their chemical and physical behavior. A time reduced molding process using a float glass enables the formation of high quality lenses while preserving the recyclability of the mother substrate. The challenge is the separation of the replica from the master mold. An overview of chemical methods based on optimized etching of coating layer through small channels will be given and the impact of glass etching on surface roughness is discussed.     

大面积高深宽比硅微通道板阵列制作

利用光辅助电化学刻蚀方法,在厚度为425μm的5英寸硅片上,制作成深宽比达50以上的微通道板阵列结构.理论分析了影响微孔阵列形貌形成的关键因素,并结合实验条件,通过调整刻蚀电压值和根据莱曼模型修正实验电流值得到理想的孔壁形貌.结果表明,相比于目前在硅基上制作高深宽微结构的几种技术,光辅助电化学刻蚀方法能够实现孔壁光滑、面积大和深宽比高的微通道板阵列结构的低成本制作.     

Characterisation of PMMA microfluidic channels and devices fabricated by hot embossing and sealed by direct bonding

In this study we fabricated a silicon-based stamp with various microchannel arrays, and demonstrated successful replication of the stamp micro-structure on poly methyl methacrylate (PMMA) substrates. We used maskless UV lithography for the production of the micro-structured stamp. Thermal imprint lithography was used to fabricate microfeatured fluidic platforms on PMMA substrates, as well as to bond PMMA lids on the fluidic platforms. The microfeature in the silicon-based (silicon wafer coated with SU-8) stamp includes microchannel arrays of approximately 30 μm in depth and 5 mm in width. We produced various channels without pillars, as well as with SU-8 pillars in the range of 50–100 μm wide and 6 μm in height. PMMA discs of 1 mm thickness were utilized as the molding substrate. We found 10 kN applied force and 100 °C embossing temperature were optimum for transferring the micro-structure to the PMMA substrate.     

Surface enhanced spectroscopy with gold nanostructures on silicon and glass substrates

We compared the surface enhanced spectroscopy signal arising from dye molecules (methylene blue, crystal violet and octadecylrhodamine B) deposited on gold nanostructures fabricated onto two kinds of substrates: silicon wafer or glass. For any molecule and excitation wavelength, the observed signal was always higher on glass compared to silicon. This experimental result is confirmed by Finite-Difference Time Domain calculations: the enhancement in the electric field is much higher with gold nanoparticles on glass than on silicon, even if a thin oxide layer is present. These results clearly demonstrate that the nature of the substrate, independently of metallic nanoparticles, is important for the preparation of highly efficient SERS nanostructures.     

硬X射线相位光栅的设计与研制

针对在普通实验室和医院实现40—100keVX射线相衬成像的需求,考虑到成像系统参数、X射线源空间相干特性及光栅衍射效率,设计出硅基相位光栅结构参数.利用我们已发展的光助电化学刻蚀技术研制出直径为5英寸的相位光栅,其空间周期为5.6μm,线宽为2.8μm,深度为40—70μm.在理论分析的基础上,通过提高硅片两端有效工作电压和修正Lehmann电流密度公式,解决了实际刻蚀过程中出现的钻蚀问题.由实验结果可知,本方案对制作大面积高精度相位光栅十分有效。     

A Flip-Chip AlGaInP LED with GaN/Sapphire Transparent Substrate Fabricated by Direct Wafer Bonding

A red-light AIGalnP light emitting diode （LED） is fabricated by using direct wafer bonding technology. Taking N-GaN wafer as the transparent substrate, the red-light LED is flip-chiped onto a structured silicon submount. Electronic luminance （EL） test reveals that the luminance flux is 130% higher than that of the conventional LED made from the same LED wafer. Current-voltage （I- V） measurement indicates that the bonding processes do not impact the electrical property of AIGalnP LED in the small voltage region （V 〈 1.5 V）. In the large voltage region （V 〉 1.5 V）, the I-V characteristic exhibits space-charge-limited currents characteristic due to the p-GaAs/n-GaN bonding interface.     

SOI大截面单模脊形X型分支波导的研制

报道了硅片直接键合（ＳＤＢ）ＳＯＩ大截面单模脊形互型分支波导的研制．对于波长为１．３μｍ的光，在θ＝２°小分支角时，这种分支波导的通道串音小于－２０ｄＢ，辐射损耗小于０．３ｄＢ．直通传输损耗小于０．８５ｄＢ／ｃｍ．     

微剪切应力传感器的加工工艺

提出了一种感测单元不直接接触流场的微剪切应力传感器结构,详细阐述了其感测单元MEMS制作工艺。采用热氧化硅掩膜方法解决了硅深刻蚀的选择比问题;优化后的硅深刻蚀工艺参数:刻蚀功率1600 W、低频(LF)功率100 W,SF6流量360 cm3/min,C4F8流量300 cm3/min,O2流量300 cm3/min。采用Cr/Au掩膜,30 ℃恒温低浓度HF溶液解决了玻璃浅槽腐蚀深度控制问题;喷淋腐蚀和基片旋转等措施提高了玻璃浅槽腐蚀表面质量。采用上述MEMS工艺制作了微剪切应力传感器样品,样品测试结果表明:弹性悬梁长度和宽度误差均在2 m以内、玻璃浅槽深度误差在0.03 m以内、静态电容误差在0.2 pF以内,满足了设计要求。     

Large-aperture focusing of x rays with micropore optics using dry etching of silicon wafers

Large-aperture focusing of Al K(α) 1.49 keV x-ray photons using micropore optics made from a dry-etched 4 in. (100 mm) silicon wafer is demonstrated. Sidewalls of the micropores are smoothed with high-temperature annealing to work as x-ray mirrors. The wafer is bent to a spherical shape to collect parallel x rays into a focus. Our result supports that this new type of optics allows for the manufacturing of ultralight-weight and high-performance x-ray imaging optics with large apertures at low cost.     

ns脉冲激光对K9玻璃的破坏实验

采用高速PIN光电探测器和高带宽的数字存储示波器,实时检测透射光脉冲和散射光脉冲的变化特征,并将之用作材料破坏的光学判据,测量得到K9玻璃在1.06μm纳秒脉冲激光作用下的能量损伤阈值约18mJ,相应的能量密度阈值为1.0kJ/cm2。通过分析透射光脉冲和散射光脉冲的特征,给出了材料的破坏时刻,并推断出K9玻璃所能承受的极限光强为1015W/m2。研究了能量透过率与泵浦能量的关系,并初步探讨了透明材料的破坏机理。结果表明:在多纵模激光的作用下,透明光学材料破坏是电离击穿与自聚焦效应综合作用的结果。