纳米硅薄膜太阳能电池的绒面结构研究

通过对比NaOH/乙二醇和NaOH/异丙醇两种体系的优劣,进行不同腐蚀时间和温度下的绒面制备试验,得到了优化的绒面制备工艺和绒面纳米硅薄膜太阳能电池。结果表明:衬底具有完整规则的"金字塔"结构,反射率为11.02%。制备的绒面纳米硅薄膜太阳能电池在标准条件(AM1.5,辐照强度0.1W/cm2,(25±1)℃)下测试,其性能参数为:S为1cm2,Voc为528mV,Isc为28.8mA,η为7.2%。相比较于无绒面结构电池,η提高了2.4%。     

高效率聚合物薄膜太阳能电池

本文评述了一种新发明的基于光合作用原理的太阳能电池发电概念。这种太阳能电池具有低的成本和高的理论转换效率。     

薄膜太阳能电池发展趋势

第九届国际光电学及工程技术研讨会于1996年11月11日至15日在日本宫崎县召开,太阳能发电低成本制造技术成为会上热点话题,其中引人关注的是材料成本低的薄膜太阳能电池,美国USSC和日本三洋电机公司采用非晶体Si膜制成的太阳能电池,光劣化后转换效率竟高达10％左右。 将太阳能电池置于屋顶供给家庭电力,显示出住户使用太阳能发电系统市场不断扩大的光明前景。 日本能源厅为了鼓励认购太阳能电池实行补助措     

CIGS薄膜太阳能电池结构分析

阐述了影响铜铟镓硒(CIGS)薄膜太阳能电池性能和效率的技术因素,包括CIGS半导体材料的晶体结构、电池的结构组成、衬底材料的选择以及CIGS薄膜的Na掺杂等。分析了多元共蒸发法、硒化法沉积CIGS吸收层以及化学水浴法沉积Cd S缓冲层的具体工艺和特征,介绍了柔性CIGS薄膜太阳能电池的卷对卷技术,最后就CIGS薄膜太阳能电池的研发与商业化生产中遇到的挑战及解决方法进行了分析与归纳。     

提高薄膜太阳能电池光谱响应的光学结构设计

光吸收效率是提高薄膜太阳能电池的光电转换效率的关键,通过增加入射光在太阳能电池中的光程的方法提升电池的吸收效率。采用有限元法对薄膜太阳能电池进行参数和结构优化。首先设计了一维具有分布式布拉格反射器性能,波长范围在400~800nm的的光子晶体DBR结构作为电池的背反射,与单纯的PIN结构的太阳能电池相比,使光吸收效率和光谱响应分别提升了38%和45%,并在此基础上,在DBR表面刻蚀光栅作为薄膜硅太阳能电池的背底反射器。仿真结果表明:通过利用DBR的高反射性和光栅的衍射作用,在400~1 000nm光谱范围内,进一步提高了太阳能电池的光吸收效率和光谱响应,通过与单纯PIN太阳能电池相比较,光吸收率和光谱响应分别提升了61.6%,和85.4%。     

纳米薄膜太阳能电池

介绍了纳米薄膜太阳能电池的基本原理与分类,比较了纳米薄膜太阳能电池与传统固态结太阳能电池的优劣,得出了虽然目前纳米薄膜太阳能电池转换效率还无法与传统固态结太阳能电池相比,但由于其制造成本低廉、工艺简单、光子吸收效率高等潜在优势,极具应用前景的结论。     

友达光电开始量产太阳能电池模块

中国台湾地区友达光电（AUO）在“PV EXPO2010第三届国际太阳能电池展”上展出了2009年底已经开始量产的转换效率为13．2％的多晶硅太阳能电池模块，最大输出功率为220W。此外，该公司还正在开发转换效率为14．66％的多晶硅太阳能电池模块和转换效率为14．7～15．05％的单晶硅太阳能电池模块。     

提高薄膜太阳能电池的效率

降低硅太阳能电池成本的方法之一是尽量减少高质量硅材料的使用量,如薄膜太阳能电池。不过这种太阳能电池的效率只达到了约11-12%。研究人员们正在寻求提升其效率的方法。最近取得突破的技术有     

High efficiency triple junction thin film silicon solar cells with optimized electrical structure

We report on improving the performance of pin‐type a‐Si:H/a‐SiGe:H/µc‐Si:H triple‐junction solar cells and corresponding single‐junction solar cells in this paper. Based on wet‐etching sputtered aluminum‐doped zinc oxide (ZnO:Al) substrates with optimized surface morphologies and photo‐electrical material properties, after adjusting individual single‐junction solar cells utilized in triple‐junction solar cells with various optimization techniques, we pay close attention to the optimization of tunnel recombination junctions (TRJs). By means of the optimization of individual a‐Si:H/a‐SiGe:H and a‐SiGe:H/µc‐Si:H double‐junction solar cells, we compensated for the open circuit voltage (V_oc) loss at the a‐Si:H/a‐SiGe:H TRJ by adopting a p‐type µc‐Si:H layer with a low activation energy. By combining the optimized single‐junction solar cells and top/middle, middle/bottom TRJs with little electrical losses, an initial efficiency of 15.06% was achieved for pin‐type a‐Si:H/a‐SiGe:H/µc‐Si:H triple‐junction solar cells. Copyright © 2014 John Wiley & Sons, Ltd.     

薄膜太阳能电池的研究进展

薄膜太阳能电池是缓解能源危机的新型光伏器件。评述了薄膜太阳能电池的优缺点,主要介绍了薄膜硅太阳能电池、多元化合物薄膜太阳能电池和有机薄膜太阳能电池的研究现状,总结了它们各自在价格成本、光电转换效率及对环境影响等方面的特点,并对其发展趋势进行了展望。     

TCOs for nip thin film silicon solar cells

Substrate configuration allows for the deposition of thin film silicon (Si) solar cells on non‐transparent substrates such as plastic sheets or metallic foils. In this work, we develop processes compatible with low T_g plastics. The amorphous Si (a‐Si:H) and microcrystalline Si (µc‐Si:H) films are deposited by plasma enhanced chemical vapour deposition, at very high excitation frequencies (VHF‐PECVD). We investigate the optical behaviour of single and triple junction devices prepared with different back and front contacts. The back contact consists either of a 2D periodic grid with moderate slope, or of low pressure CVD (LP‐CVD) ZnO with random pyramids of various sizes. The front contacts are either a 70 nm thick, nominally flat ITO or a rough 2 µm thick LP‐CVD ZnO. We observe that, for a‐Si:H, the cell performance depends critically on the combination of thin flat or thick rough front TCOs and the back contact. Indeed, for a‐Si:H, a thick LP‐CVD ZnO front contact provides more light trapping on the 2D periodic substrate. Then, we investigate the influence of the thick and thin TCOs in conjunction with thick absorbers (µc‐Si:H). Because of the different nature of the optical systems (thick against thin absorber layer), the antireflection effect of ITO becomes more effective and the structure with the flat TCO provides as much light trapping as the rough LP‐CVD ZnO. Finally, the conformality of the layers is investigated and guidelines are given to understand the effectiveness of the light trapping in devices deposited on periodic gratings. Copyright © 2008 John Wiley & Sons, Ltd.     

Modeling of current-voltage characteristics of thin film solar cells

An analytical model is developed to study the current-voltage characteristics of thin film solar cells by incorporating exponential photon absorption, carrier trapping and carrier drift in the absorber layer. An analytical expression for the external voltage dependent photocurrent is derived by solving the continuity equation for both electrons and holes assuming the electric field remains uniform in the absorber layer. The analytical results are verified with the numerical self-consistent solution of the steady-state continuity equations and the Poisson’s equation. The overall load current is calculated considering the actual solar spectrum. It is found that the solar cell efficiency critically depends on the transport properties of the carriers that drift towards the bottom contact. The recombination current dominates over the ideal diode current in CdTe based solar cells. The theoretical model is fitted with the published experimental data on various thin film solar cells and shows a very good agreement.     

Photocurrent enhancement in thin film amorphous silicon solar cells with silver nanoparticles

Silver nanoparticles embedded in a dielectric material have strong scattering properties under light illumination, due to localized surface plasmons. This effect is a potential way to achieve light trapping in thin‐film solar cells. In this paper we study light scattering properties of nanoparticles on glass and ZnO, and on silver coated with ZnO, which represent the back reflector of a solar cell. We find that large nanoparticles embedded in the dielectric at the back contact of amorphous silicon solar cells lead to a remarkable increase in short circuit current of 20% compared to co‐deposited cells without nanoparticles. This increase is strongly correlated with the enhanced cell absorption in the long wavelengths and is attributed to localized surface plasmons. We also discuss the electrical properties of the cells. Copyright © 2010 John Wiley & Sons, Ltd.     

非晶硅薄膜太阳能电池应用开发新进展

非晶硅（ａ－Ｓｉ）薄膜太阳能电池是取之不尽的洁净能源－太阳能的光电元（组）件。文章详述了ａ－Ｓｉ薄膜太阳能电池的工艺优势，市场开发状况，可能应用领域，存在问题和展望。     

Experimental and simulation study of thin film silicon solar cells with intermediate reflector

Optical and electrical simulations were carried out for thin film silicon solar tandem cells with intermediate reflector layer (IRL) between top and bottom cell and compared with experimental external quantum efficiency and current voltage characteristics results. Reference data were collected from a series of tandem cells with different thicknesses of the top cell absorber layer (160–240 nm), the bottom cell absorber layer (1750–2100 nm), and the transparent conductive oxides based IRL (10–80 nm). It turned out that for capturing correctly the influence of the IRL on the light management as a function of the IRL thickness, the conventional semicoherent approach is not sufficient. Whereas the optical properties of a very thin IRL are governed by interference effects that are best calculated using a fully coherent model, increasingly thicker IRL show a more and more incoherent behavior. By taking into account, the interface morphology and angular light distribution within the cell stack an algorithm for the effective IRL reflectivity was proposed that explains the experimental findings very well. The consecutive electrical simulations were carried out with the device simulator ASA. The dependence of short circuit current density j_sc and fill factor FF on the thickness d_IRL of the IRL is in qualitative agreement between simulation and experiment showing coincident extrema in j_sc(d_IRL) and FF(d_IRL) at the current matching point. Copyright © 2013 John Wiley & Sons, Ltd.