共查询到19条相似文献,搜索用时 109 毫秒
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本文叙述了国际上电子束曝光技术的发展趋势,分析了我国电子束曝光技术的发展现状,回顾了电子部四十八所电子束曝光技术的进展及其在微电子器件制造中成功的应用。 相似文献
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Ⅰ线光致抗蚀剂可以同时实用电子束和光学系统曝光,在50kV加速电压下,其曝光剂量为50-100μC/cm^2,曝光后在0.7%NaOH溶液内显影1分钟。其灵敏度比PMMA快5倍,分辩率为0.5μm。采用两方法制备CaAsPHEMT:一种用Ⅰ线光致抗蚀剂,对源、漏及栅全部都采用电子束曝光,制备了0.5μm栅长的GaAs PHEMT;另一种将源、漏及栅分割成两部分,其中精细部分由电子束曝光,其余部分由光学系统曝光,用这种方法制备了0.25μm栅长的GaAs PHEMT。Ⅰ 相似文献
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在研究液体抗蚀剂受力分析的基础上,对液体抗蚀荆的甩胶原理,甩胶后抗蚀剂的液面形状、抗蚀剂涂层厚度与抗蚀剂黏度和马达转速之间的关系等进行了研究。结果表明,涂层表面形状为平面;随着马达转速的增加,涂层厚度逐渐减小;而随着抗蚀剂黏度的增大,涂层厚度却逐渐增大。在此基础上,以Epoxy618为液体抗蚀剂进行了甩胶实验,得出了不同黏度下的转速.厚度曲线,验证了研究结果的正确性。最后给出了3μm厚的液体抗蚀剂Epoxy618经SDS—Ⅱ型电子束曝光机曝光后固化所得线条的JXA-8800R电子探针图。 相似文献
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<正>由于大规模集成电路集成度与微波半导体器件使用频率的提高,使得这类器件在制造时,要求刻蚀出亚微米的线条。一般的远紫外光学曝光技术已很难满足这一要求,因而高分辨率的电子束曝光技术及软X射线曝光技术得到了广泛的重视和研究。当前国际上已研制出刻蚀精度高达0.02μm的线条,并可制备高分辨率掩模版及直接在芯片上刻蚀的高分辨率电子束曝光机。运用直线电子加速器产生软X射线的曝光方法也可以制备这类器件。 相似文献
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Pochay Phillip Wise Kensall D. Allard Lawrence F. Rutledge Lester T. 《IEEE transactions on bio-medical engineering》1979,(4):199-206
A multielectrode probe structure is described in which several thin-film metal electrodes are defined on the outer surface of a glass micropipette using electron-beam lithography. Electrode geometries are controlled to within one micron, resulting in electrode recording characteristics which are extremely well matched. Recording sites are 5 , um wide rings spaced 100 , um apart in depth. Analysis and characterization show the structure to be capable of accurately recording tissue potentials with a minimum of tissue damage. Use of these probes in current source-density (CSD) analysis of extraceliular current flow is described. 相似文献
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电子束曝光的Morte Carlo模拟 总被引:3,自引:0,他引:3
建立一个更为严格地描述电子散射过程的物理模型,运用Monte Carlo方法模拟高斯分布电子束在靶体PMMA-衬底中的散射过程,研究不同曝光条件对沉积能密度的影响,获得的沉积能分布规律是:有利于降低邻近效应的高束能、薄胶层,提高曝光分辩率。 相似文献
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电子束曝光中电子散射模型的优化 总被引:5,自引:1,他引:4
提出了在0.1 keV~30 keV能量范围内进行电子束曝光Monte Carlo模拟的分段散射模型优化方案.在该方案中,对所有的弹性散射均采用精确的Mott弹性散射截面.而对非弹性散射,当能量处于E0≤10 keV,10 keV<E0≤20 keV和E0>20 keV时,分别采用了Jov修正的Bethe公式、通常的Bethe公式和相对论效应修正的Bethe公式来计算总能量损失率;当E0≤20 keV和E0>20 keV时,分别采用了Grvzinskv截面和Moller截面计算离散的能量损失率.发现模拟结果与实验结果很好地吻合,这比采用单一的散射模型和不考虑二次电子的Bethe公式得到的模拟结果更加符合实际的电子散射过程,其精度更高. 相似文献
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Monte Carlo方法模拟低能电子束曝光电子散射轨迹 总被引:11,自引:5,他引:6
建立了一个适用于描述低能电子散射的物理模型 ,利用 Monte Carlo方法对低能电子在多元多层介质中的散射过程进行模拟 .低能电子弹性散射采用较严格的 Mott截面描述 ,为了节约机时 ,利用查表与线性插值方法获得 Mott截面值 ;低能电子非弹性散射能量损失采用 Joy修正的 Bethe公式计算 ,并对其加以改进 ,引入多元介质平均电离电位、平均原子序数、平均原子量概念 ,利用线性插值方法给出光刻胶 PMMA对应的 k值 .对电子穿越多层介质提出一种新的边界处理方法 .在此基础上运用 Monte Carlo方法模拟高斯分布低能电子束在 PMMA-衬底中的复杂散射过程 . 相似文献
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Feiran Wang Jonathan H. Gosling Gustavo F. Trindade Graham A. Rance Oleg Makarovsky Nathan D. Cottam Zakhar Kudrynskyi Alexander G. Balanov Mark T. Greenaway Ricky D. Wildman Richard Hague Christopher Tuck T. Mark Fromhold Lyudmila Turyanska 《Advanced functional materials》2021,31(5):2007478
2D materials have unique structural and electronic properties with potential for transformative device applications. However, such devices are usually bespoke structures made by sequential deposition of exfoliated 2D layers. There is a need for scalable manufacturing techniques capable of producing high-quality large-area devices comprising multiple 2D materials. Additive manufacturing with inks containing 2D material flakes is a promising solution. Inkjet-printed devices incorporating 2D materials have been demonstrated, however there is a need for greater understanding of quantum transport phenomena as well as their structural properties. Experimental and theoretical studies of inkjet-printed graphene structures are presented. Detailed electrical and structural characterization is reported and explained by comparison with transport modeling that include inter-flake quantum tunneling transport and percolation dynamics. The results reveal that the electrical properties are strongly influenced by the flakes packing fraction and by complex meandering electron trajectories, which traverse several printed layers. Controlling these trajectories is essential for printing high-quality devices that exploit the properties of 2D materials. Inkjet-printed graphene is used to make a field effect transistor and Ohmic contacts on an InSe phototransistor. This is the first time that inkjet-printed graphene has successfully replaced single layer graphene as a contact material for 2D metal chalcogenides. 相似文献
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电子束曝光高斯分布束斑的Monte Carlo模拟 总被引:4,自引:1,他引:3
经地严格论证,提出一种计算简便,易于软件实现的电子束束斑直径定义方法,在此基础上运用Monte Carlo方法对高斯分布电子束斑进行模拟,给出模拟电子数分别为5000,20000,50000,100000时的模拟结果。 相似文献
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A new method for determining proximity parameters α,β,and η in electron-beam lithography is introduced on the assumption that the point exposure spread function is composed of two Gaussians.A single line is used as test pattern to determine proximity effect parameters and the normalization approach is adopted in experimental data transaction in order to eliminate the need of measuring exposure clearing dose of the resist.Furthermore,the parameters acquired by this method are successfully used for proximity effect correction in electron-beam lithography on the same experimental conditions. 相似文献