基于激光背部辐照方法的小尺寸器件的单粒子效应特性

本文基于脉冲激光背部辐照试验方法,测试了小尺寸器件的单粒子翻转与闩锁特性,以克服高集成度器件日益增加的金属布线层对激光试验的影响。研究了SRAM器件存储的数据类型对器件单粒子翻转阈值与截面的影响特性。试验测试了深亚微米器件微闩锁效应的电流变化特征。建立了一种激光能量与重离子LET值对应关系的经验公式,用于评估小尺寸器件的等效激光LET值。此外,利用激光背部辐照试验方法,初步试验研究了90nmSOI工艺PowerPC微处理器的单粒子翻转特性。     

Thermal modeling of single event burnout failure in semiconductor power devices

Experimental investigations of single event burnout (SEB) of power devices due to heavy ion impacts have identified the conditions required to produce device failure. A key feature observed in the data is an anomalistic secondary rise in current occurring shortly after the ion strike. To verify these findings including the thermally induced secondary plateau, simulations have been performed on the model single event burnout. The new models include additional thermally dependent electrical components to capture thermally induced physical effects. Through the inclusion of analytic temperature models coupled with the electrical model, the electrical response is predicted with reasonable accuracy. The simulations provide order-of-magnitude estimates as well as prediction of phenomenological features such as the secondary rise in current. This work represents a first attempt to characterize thermal failure of power devices due to heavy ion impacts by including temperature dependent components that until now have not been modeled. The thermal model in the present work produces qualitative agreement with experiments on SEB that have been previously unexplained.     

Experimental research of heavy ion and proton induced single event effects for a Bi-CMOS technology DC/DC converter

This paper tested and analyzed heavy ion and proton induced single event effects (SEE) of a commercial DC/DC converter based on a 600 nm Bi-CMOS technology. Heavy ion induced single event transients (SET) testing has been carried out by using the Beijing HI-13 tandem accelerator at China Institute of Atomic Energy. Proton test has been carried out by using the Canadian TRIUMF proton accelerator. Both SET cross section versus linear energy transfer (LET) and proton energy has been measured. The main study conclusions are: (1) the DC/DC is both sensitive to heavy ion and proton radiations although at a pretty large feature size (600 nm), and threshold LET is about 0.06 MeV·mg/cm²; (2) heavy ion SET saturation cross section is about 5 magnitudes order larger than proton SET saturation cross section, which is consistent with the theory calculation result deduced by the RPP model and the proton nuclear reaction model; (3) on-orbit soft error rate (SER) prediction showed, on GEO orbit, proton induced SERs calculated by the heavy ion derived model are 4-5 times larger than those calculated by proton test data.     

基于TCAD模拟的buffer单粒子效应解析分析

半导体器件和集成电路的辐射效应,其本质就是电子空穴对的产生和复合、电荷的传输与收集、界面态和氧化层陷阱电荷积累等一系列的物理过程。这些物理过程会受到各种因素的影响,例如上拉补偿管的尺寸、重离子入射角度、器件的外延层浓度等。本文使用TCAD器件/电路混合模式仿真了这些关键变量对buffer电路单粒子效应的影响。     

运放和光耦的单粒子瞬态脉冲效应

利用脉冲激光模拟单粒子效应实验装置研究了通用运算放大器LM124J和光电耦合器HCPL5231的单粒子瞬态脉冲(SET)效应,获得了LM124J工作在电压跟随器模式下的瞬态脉冲波形参数与等效LET值的关系,甄别出该器件SET效应的敏感节点分布.初步分析了SET效应产生的机理.以HCPL5231为例,首次利用脉冲激光测试了光电耦合器的单粒子瞬态脉冲幅度、宽度与等效LET值的关系,并尝试测试了该光电耦合器的SET截面,实验结果与其他作者利用重离子加速器得到的数据符合较好,证实了脉冲激光测试器件单粒子效应的有效性.     

运放和光耦的单粒子瞬态脉冲效应

利用脉冲激光模拟单粒子效应实验装置研究了通用运算放大器LM124J和光电耦合器HCPL5231的单粒子瞬态脉冲（SET）效应,获得了LM124J工作在电压跟随器模式下的瞬态脉冲波形参数与等效LET值的关系,甄别出该器件SET效应的敏感节点分布.初步分析了SET效应产生的机理.以HCPL5231为例,首次利用脉冲激光测试了光电耦合器的单粒子瞬态脉冲幅度、宽度与等效LET值的关系,并尝试测试了该光电耦合器的SET截面,实验结果与其他作者利用重离子加速器得到的数据符合较好,证实了脉冲激光测试器件单粒子效应的有效性.     

功率VDMOS器件的SEB致SEGR效应研究

功率VDMOS器件是航天器电源系统配套的核心元器件之一,在重粒子辐射下会发生单粒子烧毁(SEB)和单粒子栅穿(SEGR)效应,严重影响航天器的在轨安全运行。本文在深入分析其单粒子损伤机制及微观过程的基础上,发现了功率VDMOS器件在重粒子辐射下存在SEBIGR效应,并在TCAD软件和¹⁸¹Ta粒子辐射试验中进行了验证。引起该效应的物理机制是,重粒子触发寄生三极管,产生瞬时大电流,使得硅晶格温度升高,高温引起栅介质层本征击穿电压降低,继而触发SEGR效应。SEBIGR效应的发现为深入分析功率MOSFET器件的单粒子辐射效应奠定了理论基础。     

国产中高压抗辐照功率MOSFET单粒子效应

功率金属-氧化物半导体场效应晶体管(MOSFET)空间使用时易遭受重离子轰击产生单粒子效应(单粒子烧毁和单粒子栅穿)。本文对国产新型中、高压(额定电压250 V,500 V)抗辐照功率MOSFET的单粒子辐射效应进行了研究,并采取了有针对性的加固措施,使器件的抗单粒子能力显著提升。结果表明：对250 V KW2型功率MOSFET器件进行Bi粒子辐照,在栅压等于0 V时,安全工作的漏极电压达到250 V;对500 V KW5型功率MOSFET器件进行Xe粒子辐照,在栅压等于0 V时,安全工作的漏极电压达到400 V,并且当栅压为-15 V时,安全工作的漏极电压也达到400 V,说明国产中、高压功率MOSFET器件有较好的抗单粒子能力。     

基于TCAD的SRAM单粒子效应研究

针对40 nm体硅工艺利用TCAD(Technology Computer Aided Design)对关键NMOS进行3D建模,采用混合仿真模型对SRAM单粒子效应进行模拟仿真.通过改变重离子LET(Linear Energy Transfer)值、入射位置和入射角度,分析了其对单粒子效应的影响.实验结果表明40 nm工艺下单粒子效应各参数的变化与传统工艺一致.最后,基于R-C简化混合仿真模型,相比于混合仿真模型其电压、电流等参数具有较好一致性,验证了该模型对SRAM单粒子效应模拟的有效性.     

The radiation sensitivity mapping of ICs using an IR pulsed laser system

Recent results obtained with a pulsed nanosecond IR laser system to automatically test single event latch-up effects in laboratory are presented. In particular, the capabilities of this system to perform detailed mapping for ICs sensitivity to radiation are discussed. Two VLSI ASIC circuits were used for sensitivity mapping. The results are compared with those obtained in heavy ion tests at GSI (Darmstad, Germany).     

高速A/D转换器单粒子效应实时评估系统和方法研究

提出了一种在线实时检测评估高速A/D转换器(ADC)的单粒子效应的测试方法。基于该方法搭建了部分模块可复用的单粒子效应测试评估系统。系统由时钟生成模块、待测ADC模块、D/A转换器(DAC)转换输出模块、FPGA控制模块与上位机模块构成。对待测ADC模块进行重构,可完成对不同ADC器件的测试评估,提升了模块可复用性和测试效率。该系统通过监测电源引脚的电流变化、ADC内部寄存器值翻转情况、经过高速DAC转换输出的模拟波形,可实时测试评估ADC器件的单粒子锁定(SEL)、单粒子翻转(SEU)、单粒子瞬态(SET)、单粒子功能中断(SEFI)等效应。基于该系统对自主研发的具有JESD204B接口的12位2.6 GS/s高速ADC进行了单粒子效应试验。试验分析表明,该系统能准确高效评估高速ADC器件的单粒子效应。     

槽栅功率MOSFET单粒子微剂量效应电荷沉积模型

重离子会在槽栅功率MOSFET器件中引起电压电流特性漂移,即单粒子微剂量效应。为表征该效应,本文提出了一个电荷沉积模型。该模型可用来计算重离子轰击氧化层后引起的电荷沉积及电荷输运过程。应用本模型计算了单个Xe离子在二氧化硅/硅界面沉积的空穴正电荷。通过将该计算结果导入Sentaurus仿真软件中,模拟了单个Xe离子轰击槽栅MOSFET后引起的电压电流曲线漂移。模拟结果与相关实验结果一致。最后,应用本模型研究了不同参数对槽栅功率MOSFET单粒子微剂量效应的影响。     

一种高温单粒子效应测试系统的设计与实现

航天器件在空间环境中存在着单粒子效应,根据研究可知高温会提升单粒子效应的敏感性,因此为了更好地评估器件的抗辐射性能,有必要建立一套高温单粒子效应测试系统.通过建立高温单粒子效应测试系统,选择ASIC和SRAM进行高温测试实验,完成了电路高温下的单粒子效应检测,证明了温度提升单粒子效应敏感性的事实.     

Line-edge roughness induced single event transient variation in SOI FinFETs

The impact of process induced variation on the response of SOI FinFET to heavy ion irradiation is studied through 3-D TCAD simulation for the first time. When FinFET biased at OFF state configuration (V_gs=0, V_ds=V_dd) is struck by a heavy ion, the drain collects ionizing charges under the electric field and a current pulse (single event transient, SET) is consequently formed. The results reveal that with the presence of line-edge roughness (LER), which is one of the major variation sources in nano-scale FinFETs, the device-to-device variation in terms of SET is observed. In this study, three types of LER are considered: type A has symmetric fin edges, type B has irrelevant fin edges and type C has parallel fin edges. The results show that type A devices have the largest SET variation while type C devices have the smallest variation. Further, the impact of the two main LER parameters, correlation length and root mean square amplitude, on SET variation is discussed as well. The results indicate that variation may be a concern in radiation effects with the down scaling of feature size.     

SiGe HBT单粒子瞬态TCAD仿真研究

借助于TACD数值仿真,对具有交叉指状结构的锗硅异质结双极型晶体管(SiGeHBT)中由重离子辐射诱导的单粒子瞬态(SET)效应展开了详细的研究.首先分析了重离子辐射诱导的电势和场强的变化,阐明了SiGe HBT中单粒子瞬态机制.然后,通过对比重离子入射至器件不同位置时各电极的瞬态电流和感生电荷的收集情况,确定了集电极/衬底(CS)结及附近区域为SiGe HBT单粒子瞬态的敏感区域.结果表明相对于集电极和衬底的电荷收集,基极和发射极收集的电荷可忽略不计.此外,各电极的瞬态电流和电荷收集还具有明显的位置依赖性.上述结果可为SiGe HBT单粒子效应的抗辐射加固提供有力的指导依据.     

Heavy ion induced electrical property degradation in sub-100 nm bulk silicon MOS devices

The radiation response of 90 nm bulk silicon MOS devices after heavy ion irradiation is experimentally investigated. Due to the random strike of the incident particle, different degradation behaviors of bulk silicon MOS devices are observed. The drain current and maximum transconductance degrade as a result of the displacement damage in the channel induced by heavy ion strike. The off-state leakage current degradation and threshold voltage shift are also observed after heavy ion irradiation. The results suggest that the radiation induced damage of sub-100 nm MOS devices caused by heavy ion irradiation should be paid attention.     

65 nm体硅工艺NMOS中单粒子多瞬态效应的研究

针对NMOS场效应晶体管由重离子辐射诱导发生的单粒子多瞬态现象,参考65 nm体硅CMOS的单粒子瞬态效应的试验数据,采用TCAD仿真手段,搭建了65 nm体硅NMOS晶体管的TCAD模型,并进一步对无加固结构、保护环结构、保护漏结构以及保护环加保护漏结构的抗单粒子瞬态效应的机理和能力进行仿真分析。结果表明,NMOS器件的源结和保护环结构的抗单粒子多瞬态效应的效果更加明显。     

基于25 nm FinFET结构的SRAM单粒子效应研究

对基于25 nm FinFET结构的SRAM单粒子效应进行研究。使用Synopsys Sentaurus TCAD仿真软件进行器件工艺校准,并对独立3D FinFET器件以及包含FinFET器件和HSpice模型的混合电路(如6管SRAM单元)进行单粒子瞬态仿真。通过改变重粒子入射条件,分析影响瞬态电流峰值、脉宽、漏极翻转阈值等参数的因素。研究发现,混合模型中,FinFET结构器件的漏极翻转阈值为0.023 MeV·cm²/mg,对未来基于FinFET结构的器件及电路结构的加固提出了更高的要求。     

The Investigation on Single Event Function Failure for DC/DC Converters with Three Single Terminal Topological Structures

Heavy ion radiation experiments have been done to DC/DC converters with different topological structures for space applications.The test results were analyzed about the function failure of three topological structures caused by single event effects.The relationship between the function failure and the input supply voltage,the output load current and the topological structure of the module were discussed.Based on the analysis of the variation relationship among the source/drain terminal voltage of MOSFETs and the input voltage and the output load,the sensitivity factors associated with the function failure caused by single event effects were discussed.A new analysis on single event function failure of DC/DC converter based on different topologies has been presented,which can be applied to radiation hardened design and space application.     

一种MCU的测试解决方案

对MCU进行测试时,如何高效生成测试向量是测试的难点.文章以8位MCU STC12C5410AD为例,详细地介绍了通过使用仿真环境,以C语言编写功能测试程序,完成芯片寄存器控制和主要逻辑单元运算,然后使用集成电路测试系统直接生成测试向量的解决方案.使用此解决方案,可根据测试要求,在较短时间内开发出MCU测试程序,节约测试开发成本.