Mn掺杂ZnO纳米线的拉曼散射和光致发光特性

研究了不同Mn掺杂含量的ZnO纳米线在室温条件下的拉曼散射和光致发光性能,发现Mn掺杂入ZnO后引入了部分应力,在其拉曼光谱中表现出拉曼峰的位置发生偏移,Mn的掺杂含量越高,峰偏移得越明显.Mn的掺杂对ZnO纳米线的发光性能也有影响,尽管掺杂后仍保持有较为明显的紫外发光峰,但是,随着Mn含量的增加,紫外发光峰的强度降低,并且半峰宽逐渐增大.此外,Mn的掺杂明显地改变了ZnO紫外发光峰的位置.     

ZnO纳米锥光致发光性及印刷ZnO纳米锥场发射性能研究

利用物理热蒸发法制备大规模的蒲公英状的ZnO纳米锥,利用荧光光谱仪对ZnO纳米锥进行了光致发光性能测试.针对现有的丝网印刷碳纳米管(CNTs)薄膜需要各种后处理工艺后才能改善其场发射特性的问题,提出了一种不需任何后处理丝网印刷ZnO纳米锥的浆料配制工艺.用该工艺制备的丝网印刷ZnO纳米锥的场发射特性测试表明,ZnO纳米锥与制浆剂质量比为3∶5的薄膜的开启场强最低为2.25V/μm(电流密度为1μA/cm2),在4.6V/μm场强下,阳极荧光粉的发光点亮度高且分布均匀.说明该方法成本低,工艺简单,无需任何后处理,在ZnO纳米锥场发射显示器的制作中有很好的实际应用价值.     

梳状氧化锌纳米材料的制备及结构、性能的表征

通过纯锌粉蒸发，在600-650℃无催化条件下成功制备了高质量的梳状ZnO纳米结构。通过扫描电镜（SEM）及高分辨透射电镜（HRTEM）观察，所制备的梳状ZnO纳米结构具有两种典型形貌，且皆为单晶结构，分析表明其生长由气-固生长机理控制。室温光致发光谱显示，梳状ZnO纳米结构在385nm附近形成紫外发射峰；在以495nm为中心的范围内，形成较宽的绿光发射峰。     

Influence of thermal annealing on electrical and optical properties of Ga-doped ZnO thin films

Influence of thermal annealing on electrical properties of GZO films has been studied by means of Hall effect measurements and optical characterization based on Drude model analysis for transmission and reflection spectra. Electrical resistivity increased with increasing annealing temperature. Changes of electrical properties were compared between air and N₂ gas atmosphere. Thermal stability in the air was worse compared to the N₂ gas atmosphere. Annealing at rather high temperature caused decrease in the Hall mobility and increase in optical mobility. The difference between the Hall mobility and the optical mobility was attributed to carrier scattering at grain boundaries. Three kinds of deposition method, ion plating using DC arc discharge, DC magnetron sputtering, and RF power superimposed DC magnetron sputtering were compared in terms of the thermal stability.     

Influence of surface modification by 2-aminothiophenol on optoelectronics properties of ZnO nanoparticles

In this study, a precipitation method was used to synthesise ZnO nanoparticles using suitable precursors. An efficient surface modification method was proposed in order to reduce the agglomeration among synthesised small sized ZnO nanoparticles using 2-aminothiophenol as a capping agent. This article briefly investigated the effects of capping agent like 2-aminothiophenol on the optoelectronic properties of ZnO nanoparticles. The modified effectivity of 2-aminothiophenol has been examined on the nanosized ZnO nanoparticle for fluorescence and UV–visible (UV–vis) studies. The mechanism was studied for ZnO nanoparticles light emitting capability under different conditions. By facilitating the capping of ZnO with 2-aminothiophenol, fluorescence emission of the surface defects vanishes and ultraviolet (UV) emission increases. Surface capping by 2-aminothiophenol effectively covers most of the surface defects of ZnO and results in quenching of the visible region. The UV–vis absorption spectra of modified ZnO nanoparticles has been influenced by modified ZnO nanoparticles as a result of surface modification; where marked blue shift in absorption edge results. By surface modification of ZnO nanoparticles, change in optoelectronics properties has opened the new scope and possibilities to explore and fine tune the optical character of the modified ZnO for various optoelectronics applications such as UV laser.     

Effect of annealing on the structural and optical properties of non-coated and silica-coated ZnS:Mn nanoparticles

The Mn²⁺-doped ZnS nanoparticles stabilized by sodium citrate were synthesized through a simple chemical route. Using the ZnS:Mn nanoparticles as seeds, the silica-coated ZnS:Mn nanocomposites were formed in isopropanol by the controlled hydrolysis of tetraethyl orthosilicate. The photoluminescence spectra confirmed that the Mn²⁺ ions were incorporated into the ZnS nanoparticles. The annealing effect on the structural and optical properties of these particles was studied over a range of 100–400 °C. The results of X-ray diffraction and photoluminescence showed that the silica shell not only improved the thermal stability but also resisted the lattice-deformation and oxidation of the particles. The thermal analysis further confirmed that the non-coated ZnS:Mn nanoparticles were unstable beyond 200 °C.     

氧化锌薄膜的p型掺杂及光学和电学性质研究

为了实现氧化锌薄膜的p型掺杂,从而制备氧化锌同质p-n结,采用化学气相沉积法,以二水合醋酸锌为前驱,醋酸铵为氮源,在氧气氛下制备了氮掺杂的p型氧化锌薄膜.利用X射线光电子能谱和X射线衍射分析,表征了氧化锌薄膜的化学成分.通过霍尔效应测量证实了薄膜的p型导电特性.探讨了制备过程中温度、压强、源物质等条件对反应产物的影响,研究了薄膜的光学和电学特性,得到了p型氧化锌薄膜的吸收光谱和光致发光光谱,以及氧化锌p-n结的伏安特性曲线.     

Effect of annealing on the morphology and properties of ZnS:Mn nanoparticles/PVP nanofibers

As one kind of new optoelectronic materials, ZnS:Mn nanoparticles/PVP composite nanofibers are prepared by the electrospinning technique successfully. SEM, XRD, FT-IR spectroscopy, photoluminescence and TEM measurements are employed in the study. By the method of annealing, the effect on the morphology and properties of the composite nanofibers is studied. After annealing treatment, the separating state of the nanofibers is improved obviously, ZnS:Mn nanoparticles are well dispersed in the nanofiber, the PL peak originated from ⁴T₁→⁶A₁ transition of Mn ions shifts from 605 nm to 599 nm. The existence of orange emission peaks confirms that ZnS:Mn nanoparticles are formed in the fibers.     

Electrical and optical properties of ZnO:Mn thin films grown by MOCVD

Diluted magnetic semiconductor epitaxial thin films of Zn_1 − xMn_xO have been grown on c-sapphire by the MOCVD technique. Variations of a and c lattice parameters follow Vegard's law and attest to the incorporation of substitutional Mn²⁺ ions. Carrier concentration (n-type) and electron mobility were studied versus temperature for different concentrations of manganese. Incorporation of manganese leads to the opening of the band gap, observed as a blue shift in energy regarding pure ZnO.     

Influence of doping concentration on the properties of ZnO:Mn thin films by sol-gel method

Thin films of Mn-doped ZnO with different doping concentration (0.8, 1, 3, 5 at%) were prepared on Pt/Ti/SiO₂/Si substrates by using sol-gel method. The effects of the doping concentration on the structural properties, electrical characteristics and element binding energy in films were investigated. X-ray diffraction (XRD) results showed that the c-axis orientation of ZnO films was affected by Mn²⁺ content. Current-voltage (I-V) measurements indicated that resistivities of ZnO films were observably enhanced by dopant of Mn²⁺ and the resistivities value increased with a doping level up to 5 at% Mn. X-ray photoelectron spectroscopy (XPS) patterns suggested that the binding energies of O1s and ZnL₃M₄₅M₄₅ were affected by the content of Mn²⁺.     

掺Mn硅酸锌薄膜中微量氧化锌对发光强度的影响

利用溶胶-凝胶法结合高温热处理在硅衬底上制备了掺Mn硅酸锌薄膜，用XRD、SEM、UV-Vis吸收谱和PL谱测试了样品的结晶性能与光学性能，并分析了热处理温度对掺Mn硅酸锌薄膜的结晶性能和光学性能的影响．实验结果发现，ZnO的适量存在对掺Mn薄膜的发光有增强作用．进一步的分析认为，这一现象的机理可由G．G．Qin提出的量子约束-发光中心（QCLC）模型进行解释，ZnO中受激发的电子和空穴通过隧穿效应到达硅酸锌基体中复合发光，从而增强发光强度．     

ZnO纳米棒阵列、纳米片及其发光和光催化特性

首先通过溶胶-凝胶法在Si片基底上制备1层ZnO纳米薄膜,作为纳米棒的晶种层,然后利用金属浴沉积法在ZnO纳米薄膜基础上制备择优取向的ZnO纳米棒阵列,最后通过水热法二次成核结晶形成纳米片。研究证明,ZnO纳米棒阵列和纳米片均沿着c轴取向。在Cu2+抑制极性面生长的作用下,形成的ZnO纳米片结构均匀,分布面积广,单片ZnO纳米片的厚度约为8 nm,面积呈平方微米级,较大的有40μm2左右。ZnO纳米结构的生长取向对其物理化学性能具有重要影响。高度沿c轴取向的ZnO纳米棒有利于紫外光发射和激光器的发展,但极性面的缩小不利于光催化反应。     

Ge掺杂ZnO薄膜光学特性的研究

采用射频磁控共溅射法在硅基片上沉积了Ge掺杂ZnO薄膜,所制备的样品具有强蓝光发射和弱黄光发射.通过分析Ge掺入量和退火温度对发光谱的影响,并与相同条件下所沉积的纯ZnO薄膜的发光特性进行比较,结果表明,蓝光发射可能与Ge杂质形成的施主能级有关,弱黄峰可能源于Ge替代Zn空位形成的杂质能级到价带的跃迁复合.     

Cu掺杂ZnO的光致发光光谱

ZnO是宽禁带半导体,室温下禁带宽度为3.37eV,激子束缚能高达60meV,是制备光电器件的优选材料。然而,p型掺杂仍是亟待解决的问题。ⅠB元素Cu被认为在ZnO中产生受主能级,可以实现ZnO的p型掺杂。综述了各种制备方法、制备条件和激发条件下得到的Cu掺杂ZnO薄膜、纳米线和纳米棒的光致发光谱和机理,总结出Cu掺杂ZnO光致发光谱的带边发射会因为Cu的掺杂强度降低,或出现发射中心红移等现象。可见光区域由于Cu掺杂会产生新的蓝光、绿光和橙光发射峰,蓝光发射峰可能与Cu2+-Cu+跃迁或VZn和Zni有关;绿光发射峰可能与Cu杂质或VO-VZn跃迁有关,Cu掺杂还可能引入非辐射复合的点缺陷中心;橙光发射峰则可能由于Cu杂质受主能级向深施主能级跃迁而产生。     

Ni2+掺杂ZnO薄膜及粉体的结构和发光性能研究

采用激光脉冲沉积法,用XeCl准分子激光器在Si (100)基片、真空和5Pa氧气气氛下制备了Ni2+(0.8％(原子分数))掺杂的呈六角纤锌矿结构的ZnO薄膜.氧气气氛下制备的薄膜沿(002)取向生长,表面比较平整,平均颗粒尺寸为80nm.真空条件下制备的薄膜出现Zn2SiO4杂相,平均颗粒尺寸为150nm.和真空条件下制备的薄膜相比,氧气气氛下制备的薄膜具有较强的ZnO本征发光,在425nm附近出现由于填隙Zn缺陷引起的较宽的蓝光发光带,并且在482nm处出现了由于氧空位和氧间隙间的转换引起的较强的蓝光发光峰,同时由于氧缺陷引起的449nm附近的蓝光发光峰强度明显降低.     

基于氧化铝模板的有序ZnO纳米棒的合成及光学特性研究

利用高度有序的多孔氧化铝膜作为模板,使用简单的热蒸发Zn粉的方法,成功地制备出高度有序的ZnO纳米棒束,该方法克服了制备有序纳米结构通常需要的催化剂或复杂的合成过程.利用扫描电镜、透射电镜和X射线衍射研究了样品的形貌及其结构特性,其结果表明模板表面所制备的ZnO纳米棒具有更好的有序度和结晶质量,从而推断出模板表面有序ZnO纳米棒的形成应该同模板表面局域化负电荷的存在有关.同Si基片上所形成无序纳米棒的光致发光谱相比,模板表面所形成的有序ZnO纳米棒束具有更强的紫外峰,表明有序的ZnO纳米棒具有更好的结晶质量和光学特性.     

Sn掺杂ZnO半导体纳米线的制备、表征及光学性能

采用化学气相沉积法获得了Sn掺杂含量约为2.4%(原子分数)的Sn掺杂ZnO半导体纳米线。X射线衍射结果表明,Sn的掺杂并没有改变ZnO的纤锌矿结构。掺杂纳米线的室温光致发光光谱在409.2nm和498.0nm处出现了蓝绿光发光峰。探讨了其发光机制,认为前者可能来源于从导带到Zn空位形成的浅受主能级的跃迁以及从氧空位形成的浅施主能级到价带的跃迁;而后者来源于从氧空位形成的浅施主能级到锌空位浅受主能级的跃迁。     

反应源温度对ZnO纳米线阵列定向性及发光性能的影响

以Au薄膜为催化剂、ZnO与碳混合粉末为反应源,采用碳热还原法在单晶Si衬底上制备了ZnO纳米线阵列.通过扫描电子显微镜( SEM)、X射线衍射仪(XRD)、荧光分光光度计对样品的表征,研究了反应源温度对ZnO纳米线阵列的定向性和光致发光性能的影响.样品在源温度920℃条件下沿(002)方向择优生长,定向性最好,温度过低不利于ZnO纳米线阵列密集生长,而温度过高导致Zn原子二次蒸发,因而也不利于纳米线阵列的定向和择优生长;样品在源温度880℃有最强的近紫外带边发射,表明温度过高和过低都不利于ZnO晶体结构的优化;由于ZnO纳米线在缺氧氛围下生长,氧空位是缺陷存在的主要形式,因此所有样品都有较强的绿光发射.温度升高导致纳米线生长速度提高而增加了氧空位缺陷数量,从而使样品绿峰强度增强并在源温度920℃时达最大值,但温度的进一步升高可导致ZnO纳米线表面Zn元素的蒸发而降低氧空位缺陷的数量,从而抑制绿峰强度.     

溶胶-凝胶法制备ZnO薄膜及其性能研究

使用溶胶-凝胶法在P型Si(100)衬底上成功地制备了具有c轴择优取向性和高可见光透射率的多晶ZnO薄膜.通过XRD、SEM以及PL光谱等分析,表明:所制备的是结晶良好的ZnO薄膜,表面均匀致密,薄膜晶粒尺寸大约在15～60 nm,颗粒平均直径大约为38nm.由透射谱可知,制备的ZnO薄膜在可见光区域内薄膜的平均透射率在85%以上;由光致发光谱可知,室温下可观察到显著的紫外光发射,说明具有较好的光学性质.     

Structural, optical and magnetic properties of Co-doped ZnO nanorods with hidden secondary phases

Co-doped ZnO nanorods (composition: Zn(0.955)Co(0.045)O) were grown by a simple surfactant-assisted hydrothermal technique. The morphological, structural, optical and magnetic properties of the as-prepared nanorods were investigated by means of scanning electron microscopy, high-resolution transmission electron microscopy, x-ray diffraction, x-ray photoelectron spectroscopy, micro-Raman spectroscopy, micro-cathodoluminescence, and vibrating sample magnetometry (VSM). The results showed that the sample had rod-like morphology and that the preferential growth direction was along the c axis. While Co was successfully doped into the ZnO wurtzite lattice structure as revealed by several characterization techniques, hidden secondary phases of Zn(y)Co(3-y)O(4) (0≤y≤1) were also clearly detected by the micro-Raman spectroscopic technique. We propose that the predominant diffusion-limited Ostwald ripening crystal growth mechanism under the hydrothermal coarsening yielded such phase segregation. VSM results showed that the nanorods displayed relatively weak room-temperature ferromagnetism. We suggest that the origin of the ferromagnetism is probably due to the presence of the mixed cation valence of Co via a d-d double-exchange mechanism rather than the real doping effect. It is essential to control the crystal growth mechanism and defect states associated with the ferromagnetism in order to realize the intrinsic diluted magnetic semiconductors.