Electrical properties and AC degradation characteristics of low voltage ZnO varistors doped with Nd2O3

The electrical properties and degradation characteristics of low voltage ZnO varistors were investigated as a function of Nd₂O₃ content. The varistor ceramics with 0.03 mol% Nd₂O₃ sintered at 1250 °C were far more densified than those with 0.06, 0.09 and 0.12 mol% Nd₂O₃. The addition of Nd₂O₃ to the low voltage ZnO varistors greatly improved the current–voltage characteristics; the nonlinear coefficient of varistors increase from 12.2 to 34.6 with increasing Nd₂O₃ content. The samples with 0.03 mol% Nd₂O₃ showed excellent stability due to high density and relatively good V–I characteristics, with the nonlinear coefficient of 22.5 and the leakage current of 9.6 μA. Their variation rate of varistor voltage and nonlinear coefficient and leakage current were −4.7%, −5.4%, 18.3%, respectively, under AC degradation stress (1.0 V_1 mA/125 °C/24 h).     

Giant dielectric permittivity and non-linear electrical behavior in CaCu3Ti4O12 varistors from the molten-salt synthesized powder

CaCu₃Ti₄O₁₂ (CCTO) powder has been prepared by a molten salt method using the NaCl–KCl mixture. Crystal structure and microstructure of the powder and the resulting ceramics have been characterized by using X-ray diffraction (XRD) and scanning electron microcopy (SEM). Impedance analyzer and current–voltage meter were employed to analyze dielectric and nonlinear (I–V) properties of the CCTO ceramics with different sintering durations and subsequent cooling rates. The values of dielectric permittivity and nonlinear coefficient of the quenched sample were found to be higher than those of the slowly cooled sample. More specifically, the cooling methods (quenching and furnace-cooling) have allowed to adjust; (?) the breakdown voltage within a rather low range of 0.3–4.4 kV cm⁻¹; (??) the nonlinear coefficient between 2 and 6 and (???) the giant dielectric permittivity for the ceramics within a range from 5000 to 20000. A double Schottky barrier can be evidenced from the linear behavior between the ln J and E^1/2 in grain boundary regions. The relationship between the electrical current density and the applied electrical field indicates that the potential barrier height Φ_B is holding time dependent.     

Sintering of glass-added BaZn1/3Nb2/3O3 ceramics

The complex perovskite oxide Ba(Zn_1/3Nb_2/3)O₃ (BZN) has been studied for its attractive dielectric properties which place this material interesting for applications as multilayer ceramics capacitors or hyperfrequency resonators. This material is sinterable at low temperature with combined glass phase–lithium salt additions, and exhibits, at 1 MHz very low dielectric losses combined with relatively high dielectric constant and a good stability of this later versus temperature. The 2 wt.% of ZnO–SiO₂–B₂O₃ glass phase and 1 wt.% of LiF-added BZN sample sintered at 900 °C exhibits a relative density higher than 95% and attractive dielectric properties: a dielectric constant ?_r of 39, low dielectrics losses (tan(δ) < 10⁻³) and a temperature coefficient of permittivity τ_? of 45 ppm/°C⁻¹. The 2 wt.% ZnO–SiO₂–B₂O₃ glass phase and 1 wt.% of B₂O₃-added BZN sintered at 930 °C exhibits also attractive dielectric properties (?_r = 38, tan(δ) < 10⁻³) and it is more interesting in terms of temperature coefficient of the permittivity (τ_? = −5 ppm/°C). Their good dielectric properties and their compatibility with Ag electrodes, make these ceramics suitable for L.T.C.C applications.     

Structure and dielectric characteristics of Ca(Fe1/2Ta1/2)O3 complex perovskite ceramics

Ca(Fe_1/2Ta_1/2)O₃ complex perovskite ceramics have been prepared and characterized in the crystal structure and microstructures, and the dielectric characteristics have been evaluated over a broad temperature and frequency range. There are two dielectric relaxations in low and high temperature ranges, respectively. Differing from the situation for Ba(Fe_1/2Ta_1/2)O₃, Sr(Fe_1/2Ta_1/2)O₃ and Ba(Fe_1/2Nb_1/2)O₃, O₂-annealing has little effect on the dielectric properties of Ca(Fe_1/2Ta_1/2)O₃, and the much lower dielectric constant and low loss are ascribed to the low concentration of Fe²⁺ according to the XPS measurements. The microwave dielectric properties (at 5.38 GHz) for Ca(Fe_1/2Ta_1/2)O₃ ceramics are obtained as: ?_r = 30.7, Qf = 3070 GHz.     

Microstructures and dielectric properties of spark plasma sintered Ba0.4Sr0.6TiO3/CaCu3Ti4O12 composite ceramics

(1 − x)Ba_0.4Sr_0.6TiO₃/xCaCu₃Ti₄O₁₂ composite ceramics were prepared by spark plasma sintering. Sintering behavior, microstructures and dielectric properties of the composite ceramics were investigated by XRD, SEM, EDS and dielectric spectrometer. Dense composite ceramics consisting of Ba_0.4Sr_0.6TiO₃ phase and CaCu₃Ti₄O₁₂ phase were prepared at 800 °C for 0 min. The dielectric loss of the composite ceramic decreased with increasing amount of Ba_0.4Sr_0.6TiO₃, and the high dielectric constant were retained. Moreover, the better temperature stability of dielectric constant was obtained. These improvements of dielectric characteristics have great scientific significance for potential application.     

Microwave dielectric properties of SnO2-doped CaSiO3 ceramics

SnO₂-doped CaSiO₃ ceramics were successfully synthesized by a solid-state method. Effects of different SnO₂ additions on the sintering behavior, microstructure and dielectric properties of Ca(Sn_1−xSi_x)O₃ (x=0.5–1.0) ceramics have been investigated. SnO₂ improved the densification process and expanded the sintering temperature range effectively. Moreover, Sn⁴⁺ substituting for Si⁴⁺ sites leads to the emergence of Ca₃SnSi₂O₉ phase, which has a positive effect on the dielectric properties of CaO–SiO₂–SnO₂ materials, especially the Qf value. The Ca(Sn_0.1Si_0.9)O₃ ceramics sintered at 1375 °C possessed good microwave dielectric properties: ε_r =7.92, Qf =58,000 GHz and τ_f=−42 ppm/°C. The Ca(Sn_0.4Si_0.6)O₃ ceramics sintered at 1450 °C also exhibited good microwave dielectric properties of ε_r=9.27, Qf=63,000 GHz, and τ_f=−52 ppm/°C. Thus, they are promising candidate materials for millimeter-wave devices.     

Enhanced stability in CO2 of Ta doped BaCe0.9Y0.1O3−δ electrolyte for intermediate temperature SOFCs

The influence of Ta concentration on the stability of BaCe_0.9−xTa_xY_0.1O_3−δ (where x=0.01, 0.03 and 0.05) powders and sintered samples in CO₂, their microstructure and electrical properties were investigated. The ceramic powders were synthesized by the method of solid state reaction, uniaxially pressed and sintered at 1550 °C to form dense electrolyte pellets. A significant stability in CO₂ indicated by the X-ray analysis performed was observed for the samples with x≥0.03. The electrical conductivities determined by impedance measurements in the temperature range of 550–750 °C and in various atmospheres (dry argon, wet argon and wet hydrogen) increased with temperature but decreased with Ta concentration. The highest conductivities were observed in the wet hydrogen atmosphere, followed by those in wet argon, while the lowest were obtained in the dry argon atmosphere for each dopant concentration. The composition with Ta content of 3 mol% showed satisfactory characteristics: good resistance to CO₂ in extreme testing conditions, while a somewhat reduced electrical conductivity is still comparable with that of BaCe_0.9Y_0.1O_3−δ.     

Cr2O3 doping in ZnO–0.5 mol% V2O5 varistor ceramics

The effects of the amount of Cr₂O₃ (0.5–4 mol%) on the microstructure and the electrical properties have been studied in a binary ZnO–0.5 mol% V₂O₅ system. The microstructure of the samples consists mainly of ZnO grains with ZnCr₂O₄ and α-Zn₃(VO₄)₂ as the minority secondary phases. The addition of Cr₂O₃ is found to be effective in controlling the abnormal ZnO grain growth often found in V₂O₅-doped ZnO ceramic system, and a more uniform microstructure can be obtained. The varistor performance is also improved as observed from the increase in the non-linear coefficient α of the Cr₂O₃-doped ZnO–V₂O₅ samples. The α value is found to increase with the amount of Cr₂O₃ for up to 3 mol% Cr₂O₃ content. Further increase in Cr₂O₃ is found to cause a decrease in the α value. The highest α value of 28.9 is obtained for the ZnO–0.5 mol% V₂O₅–3 mol% Cr₂O₃ sample.     

Densification and grain growth of CuO-doped Pr6O11 varistors

The effect of CuO doping on the microstructure and electrical properties of Pr₆O₁₁ varistors was investigated. Samples were prepared by conventional ceramic techniques, and were sintered at 1150 °C in air for 2 h. The microstructure was investigated by scanning electron microscopy (SEM). The phases and chemical composition were analyzed by X-ray diffraction (XRD) and energy dispersive spectroscopy (EDS). The results indicated that CuO can promote the densification of the Pr₆O₁₁-based varistors to 95.8% of the theoretical density. CuO forms a solid solution with Pr₆O₁₁ up to 0.5 mol%, above which Pr₂CuO₄ precipitates in the grain boundary. From the I–V measurements, minor CuO doping can improve the nonlinear electrical properties. A further increase in CuO content induces a reduction in the nonlinear electrical properties due to the consumption of absorbed oxygen on the grain surfaces.     

Structure and electrical properties of Ca0.28Ba0.72Nb2O6 ceramics with addition of rare earth oxides (CeO2, La2O3)

Ca_0.28Ba_0.72Nb₂O₆ (CBN28) ceramics with addition of CeO₂ and La₂O₃, were prepared by the conventional ceramic fabrication technique. XRD results showed that the single tungsten bronze structure of CBN28 was not changed by adding CeO₂ or La₂O₃. SEM results indicated that both CeO₂ and La₂O₃ dopants were effective in inhibiting the grain growth and suppressing the anisotropic growth behavior in tungsten bronze structure. It was also found that both two kinds of dopants had remarkable effects on the dielectric and ferroelectric properties of CBN28 ceramics. Compared with CBN28 ceramics, the dielectric constant around room temperature ε_r, dielectric loss tan δ, the degree of diffuseness γ and coercive field E_c were all ameliorated when doping proper amount of CeO₂ or La₂O₃. The comprehensive electric performance was obtained in CBN28–0.3 wt% CeO₂ and CBN28–0.4 wt% La₂O₃ ceramics. Besides, the underlying mechanism for variations of the electrical properties due to different dopants was explained in this work.     

Effects of CaSiO3 addition on sintering behavior and microwave dielectric properties of Al2O3 ceramics

The effects of CaSiO₃ addition on the sintering behavior and microwave dielectric properties of Al₂O₃ ceramics have been investigated. The addition of CaSiO₃ into Al₂O₃ ceramics resulted in the emergence of Ca₂Al₂SiO₇ and CaAl₂Si₂O₈, which acting as liquid sintering aids can effectively lower the sintering temperature of Al₂O₃ ceramic. The Q × f value of Al₂O₃-CaSiO₃ ceramics decreased with the CaSiO₃ addition increasing because of the lower Q × f value of Ca₂Al₂SiO₇ and CaAl₂Si₂O₈. Compared with the pure CaSiO₃ ceramic, the Al₂O₃-CaSiO₃ ceramic with 20 wt% CaSiO₃ addition possessed good dielectric properties of ?_r = 9.36 and Q × f = 13,678 GHz at the similar sintering temperature.     

Effect of Bi2O3 and B2O3 additives on the sintering temperature, microstructure, and microwave dielectric properties for Sm(Mg0.5Ti0.5)O3 ceramics

The microwave dielectric properties of Sm(Mg_0.5Ti_0.5)O₃ incorporated with various amount of Bi₂O₃ and B₂O₃ additives have been investigated systematically. In this study, both Bi₂O₃ and B₂O₃ additives acting as a sintering aid can effectively lower the sintering temperature from 1550 °C to 1300 °C. The ionic radius of Bi³⁺ for a coordination number of 6 is 0.103 nm, whereas the ionic radius of B³⁺ is 0.027 nm. Clearly, the ionic radius of Bi³⁺ is greatly larger than one of B³⁺, which resulted in the specimens incorporated with Bi₂O₃ having larger lattice parameters and cell volume than those incorporated with B₂O₃. The experimental results show that no second phase was observed throughout the entire experiments. Depending on the interfacial tension, the liquid phase may penetrate the grain boundaries completely, in which case the grains will be separated from one another by a thin layer as shown in Sm(Mg_0.5Ti_0.5)O₃ ceramics incorporated with Bi₂O₃. Whereas, in Sm(Mg_0.5Ti_0.5)O₃ ceramics incorporated with B₂O₃, the volume fraction of liquid is high, the grains may dissolve into the liquid phase, and rapidly rearrange, in which case contact points between agglomerates will be dissolved due to their higher solubility in the liquid, leading plate-like shape microstructure.A dielectric constant (?_r) of 29.3, a high Q × f value of 26,335 GHz (at 8.84 GHz), and a τ_f of −32.5 ppm/°C can be obtained for Sm(Mg_0.5Ti_0.5)O₃ ceramics incorporated with 10 mol% Bi₂O₃ sintered at 1300 °C. While Sm(Mg_0.5Ti_0.5)O₃ ceramics incorporated with 5 mol% B₂O₃ can effectively lower temperature coefficient of resonant frequency, which value is −21.6 ppm/°C. The Sm(Mg_0.5Ti_0.5)O₃ ceramic incorporated with heavily Bi₂O₃ and B₂O₃ additives exhibits a substantial reduction in temperature (∼250 °C) and compatible dielectric properties in comparison with that of an un-doped one. This implied that this ceramic is suitable for miniaturization in the application of dielectric resonators and filters by being appropriately incorporated with a sintering aid.     

Effect of HfO2 content on the microstructure and piezoelectric properties of (Bi0.5Na0.5)0.94Ba0.06TiO3 lead-free ceramics

(Bi_0.5Na_0.5)_0.94Ba_0.06TiO₃–xHfO₂ [BNBT–xHfO₂] lead-free ceramics were prepared using the conventional solid-state reaction method. Effects of HfO₂ content on their microstructures and electrical properties were systematically studied. A pure perovskite phase was observed in all the ceramics with x=0–0.07 wt%. Adding optimum HfO₂ content can induce dense microstructures and improve their piezoelectric properties, and a high depolarization temperature was also obtained. The ceramics with x=0.03 wt% possess optimum electrical properties (i.e., d₃₃~168 pC/N, k_p~32.1%, Q_m~130, ε_r~715, tan δ~0.026, and T_d~106 °C, showing that HfO₂-modified BNBT ceramics are promising materials for piezoelectric applications.     

Effect of La-doping on the properties of CaCu3Ti4O12 dielectric ceramics

Nano-size Ca_1−χLa_2χ/3Cu₃Ti₄O₁₂ (χ = 0.00, 0.05, 0.10, 0.15 and 0.20) precursor powders were prepared via the sol–gel method and the citrate auto-ignition route and then processed into micro-crystal Ca_1−χLa_2χ/3Cu₃Ti₄O₁₂ ceramics under heat treatment. Characterization of the as-obtained ceramics with XRD and SEM showed an average grain sizes of ∼1–2 μm, indicating La³⁺ amount to have little impact on grain size. The room-temperature dielectric constant of the Ca_1−χLa_2χ/3Cu₃Ti₄O₁₂ ceramics sintered at 1000 °C was of the order of 10³–10⁴ despite the variation of χ values. Compared with CaCu₃Ti₄O₁₂, La³⁺-doped CaCu₃Ti₄O₁₂ showed a flatter dielectric constant curve related to frequency. It was found that the loss tangent of the Ca_1−χLa_2χ/3Cu₃Ti₄O₁₂ ceramics was less than 0.20 in ∼600–10⁵ Hz region, which rapidly decreased to a minimum value of 0.03 by La³⁺doping with χ = 0.05. Our measurement of the ceramics conductivities (σ) also indicated that the appropriate introduction of La³⁺ into CaCu₃Ti₄O₁₂ would distinctly result in its dielectric properties.     

Effects of Al2O3 addition on the sintering behavior and microwave dielectric properties of CaSiO3 ceramics

The effects of Al₂O₃ addition on the densification, structure and microwave dielectric properties of CaSiO₃ ceramics have been investigated. The Al₂O₃ addition results in the presence of two distinct phases, e.g. Ca₂Al₂SiO₇ and CaAl₂Si₂O₈, which can restrict the growth of CaSiO₃ grains by surrounding their boundaries and also improve the bulk density of CaSiO₃-Al₂O₃ ceramics. However, excessive addition (≥2 wt%) of Al₂O₃ undermines the microwave dielectric properties of the title ceramics since the derived phases of Ca₂Al₂SiO₇ and CaAl₂Si₂O₈ have poor quality factor. The optimum amount of Al₂O₃ addition is found to be 1 wt%, and the derived CaSiO₃-Al₂O₃ ceramic sintered at 1250 °C presents improved microwave dielectric properties of ?_r = 6.66 and Q × f = 24,626 GHz, which is much better than those of pure CaSiO₃ ceramic sintered at 1340 °C (Q × f = 13,109 GHz).     

Low temperature cofiring and compatibility with silver electrode of ZnO-SnO2-TiO2-Nb2O5 ceramics with BaCu(B2O5) addition

The effect of BaCu(B₂O₅) (BCB) addition on the sintering temperature and microwave dielectric properties of 2.5ZnO-0.2SnO₂-4.8TiO₂-2.5Nb₂O₅ (ZSTN) has been investigated by the solid-state ceramic route. X-ray diffraction and scanning electron microscopy techniques were used to analysis the structure and microstructure. The microwave dielectric properties were measured by the resonance method. It was found that the addition of BCB can effectively lower the sintering temperature from 1100 °C to 900 °C, and improves the microwave dielectric properties of ZSTN ceramics. The BCB doped ZSTN ceramics can be compatible with Ag electrode, which makes it a promising ceramic for LTCC technology application.     

Electrical properties of Pr6O11-doped WO3 capacitor–varistor ceramics

The microstructure and electrical properties of Pr₆O₁₁-doped WO₃ ceramics were investigated. Results showed that the breakdown voltage of doped samples was lower than that of the undoped. The dielectric constant of doped samples was higher than that of the undoped, and the high dielectric constant made Pr₆O₁₁-doped WO₃ ceramics to be applicable as a kind of capacitor–varistor materials. A small content of Pr₆O₁₁ could significantly improve nonlinear properties of the samples. The WO₃–0.03 mol% Pr₆O₁₁ obtained a large nonlinear coefficient of 3.8, a low breakdown voltage of 8.8 V/mm, and a high dielectric constant of 7.69 × 10⁴ at 1 kHz. The defects theory was introduced to explain the nonlinear electrical behavior of Pr₆O₁₁-doped WO₃ ceramics.     

Effect of Bi2O3 additives on sintering and microwave dielectric behavior of La(Mg0.5Ti0.5)O3 ceramics

Bi₂O₃ was selected as liquid phase sintering aid to lower the sintering temperature of La(Mg_0.5Ti_0.5)O₃ ceramics. The sintering temperature of La(Mg_0.5Ti_0.5)O₃ ceramics is generally high, about 1600 °C. However, the sintering temperature was significantly lowered about 275 °C from 1600 °C to 1325 °C by incorporating in 15 mol% Bi₂O₃ and revealed the optimum microwave dielectric properties of dielectric constant (?_r) value of 40.1, a quality factor (Q × f) value of 60,231 GHz, and the temperature coefficient (τ_f) value of 70.1 ppm/°C. During all addition ranges, the relative dielectric constants (?_r) were different and ranged from 32.0 to 41.9, the quality factors (Q × f) were distributed in the range of 928–60,231 GHz, and the temperature coefficient (τ_f) varies from 0.3 ppm/°C to 70.3 ppm/°C. Noticeably, a nearly zero τ_f can be found for doping 5 mol% Bi₂O₃ sintering at 1325 °C. It implies that nearly zero τ_f can be achieved by appropriately adjusting the amount of Bi₂O₃ additions and sintering temperature for La(Mg_0.5Ti_0.5)O₃ ceramics.     

Structure,dielectric and piezoelectric properties of Ba0.90Ca0.10Ti1−xSnxO3 lead-free ceramics

Lead-free piezoelectric ceramics Ba_0.90Ca_0.10Ti_1−xSn_xO₃ have been prepared by a conventional ceramic fabrication technique and the effects of Sn⁴⁺ on the structure, dielectric and piezoelectric properties of the ceramics have been investigated. All the ceramics exhibit a pure perovskite structure. After the substitution of Sn⁴⁺, the crystal structure of ceramics is transformed gradually from a tetragonal to an orthorhombic phase, and becomes a pseudo-cubic phase at x≥0.14. The substitution also decreases the Curie temperature greatly from 138 °C at x=0 to 33 °C at x=0.12, and shifts the orthorhombic–tetragonal phase transition to higher temperatures. Coexistence of the orthorhombic and tetragonal phases is formed in the ceramic at x=0.10, leading to significant improvements in the piezoelectric properties: d₃₃=521 pC/N and k_p=45.5%. Our results also reveal that the ceramics sintered at higher temperatures contain larger grains, and thus exhibit more noticeable tetragonal–orthorhombic phase transition and enhanced ferroelectric and piezoelectric properties.