Near room temperature giant negative and positive electrocaloric effects coexisting in lead–free BaZr0.2Ti0.8O3 relaxor ferroelectric films

BaZr_0.2Ti_0.8O₃ (BZT) relaxor ferroelectric (FE) films with tetragonal structure were deposited on Pt/TiO₂/SiO₂/Si(100) substrates via a sol-gel technique. A giant electrocaloric effect (ECE) was observed in the compact films with ΔT = 43.6 K and ΔS = 61.9 J/K kg at near room temperature of 366.5 K, which was attributed to the high breakdown electric field of E = 1010 kV/cm. Meanwhile, large negative ECE (ΔT = ? 5.2 K and ΔS = ? 8.8 J/K kg at room temperature of 305 K, ΔT = ? 5.1 K and ΔS = ? 7.2 J/K kg at near room temperature of 375 K) were achieved. The abnormal negative ECE is originated from structural transformation in relaxor ferroelectrics. The coexisting of giant negative and positive electrocaloric effects makes it more effective to realize the refrigeration during the application or removal of an electric field. The maximum electrocaloric coefficient (ζ_max = 0.043 K cm/kV) and refrigeration efficiency (COP = 35.18) of the films were obtained at near room temperature of 366.5 K. The giant electroelectric effect makes BZT films promising as lead-free materials for application in environment-friendly refrigeration equipment at near room temperature.     

Effects of Tb doping on structural and electrical properties of 47(Ba0.7Ca0.3)TiO3–0.53Ba(Zr0.2Ti0.8)O3 thin films at various annealing temperature by pulsed laser deposition

The ceramic thin films of 47(Ba_0.7Ca_0.3)TiO₃–0.53Ba(Zr_0.2Ti_0.8)O₃ (BCZT) + x (x = 0.2, 0.3, 0.4 and 0.5) mol% Tb were grown on Pt(111)/Si substrates with various annealing temperature by pulsed laser deposition. The XRD spectra confirm that Tb element can enhance the (l10) and (111) orientations in ceramic films. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) images show that Tb-doping can increase particle size effectively. The surface of Tb-doped film annealed at 800 ℃ is uniform and crack-free, and the average particle size and mean square roughness (RMS) are about 280 nm and 4.4 nm, respectively. Comparing with pure BCZT, the residual polarization (P_r) of 0.4 mol% Tb-doped film annealed at 800 ℃ increase from 3.6 to 9.8 μC/cm². Moreover, the leakage current density value of Tb doped films are one order of magnitude (5.33 × 10^?9?1.97 × 10^?8 A/cm² under 100 kV/cm) smaller than those of pure BCZT films (1.02 × 10^?7 A/cm²).     

Microwave dielectric properties of barium substituted screen printed CaBi2Nb2O9 ceramic thick films

In the present study, Aurivillius-structured Ba²⁺ substituted CaBi₂Nb₂O₉ (CBNO) ceramic powder was synthesized by co-precipitation method. The CBNO thick films were delineated by screen printing method on alumina substrates using co-precipitated ceramic powder. The overlay method was adopted to measure the microwave dielectric properties of prepared thick films. Single phase layered perovskite structure of the prepared thick films was confirmed by X-ray Diffraction. The effects of Ba²⁺ substitution on the surface morphology, bonding, and microwave dielectric properties of thick films were systematically presented. The maximum value of microwave dielectric constant for the CBNO thick films at 11.8 GHz is 15.6 for Ba²⁺=0.8 substitution. The shift in the stretching vibration modes of the Nb-O bond of NbO₆ octahedron in the Raman spectra with a substitution of Ba²⁺ in CBNO was observed. The substitution of Ba²⁺ on A-site of CBNO improves the microwave dielectric properties of prepared thick films. This work may provide a new approach to enhance the microwave dielectric performance of Aurivillius-structured ceramic thick films.     

Enhanced dielectric and energy-storage properties in ZnO-doped 0.9(0.94Na0.5Bi0.5TiO3−0.06BaTiO3)−0.1NaNbO3 ceramics

[0.9(0.94Na_0.5Bi_0.5TiO₃?0.06BaTiO₃)?0.1NaNbO₃]-xZnO (NBT-BT-NN-xZnO, x=0, 0.5 wt%, 1.0 wt%, 1.5 wt%, and 2.0 wt%) ferroelectric ceramics were fabricated using a conventional solid-state reaction method. The effects of ZnO content on dielectric, energy-storage and discharge properties were systematically investigated. Dielectric constant and difference between maximum and remanent polarization were significantly improved by ZnO doping. Dielectric constant of NBT-BT-NN-1.0-wt% ZnO was 3218 at 1 kHz and room temperature, i.e. one time bigger than that of pure NBT-BT-NN ceramic. As a consequence, a maximum energy-storage density of 1.27 J/cm³ with a corresponding efficiency of 67% was obtained in NBT-BT-NN-1.0-wt% ZnO ceramic. Moreover, its pulsed discharge energy density was 1.17 J/cm³, and 90% of which could be released in less than 300 ns. Therefore, ZnO doped NBT-BT-NN ceramic with a large energy-storage density and short release time could be a potential candidate for applications in high energy-storage capacitors.     

Effect of composition and grain size on dielectric,ferroelectric and induced strain behavior of PLZT/ZrO2 composites

Lead lanthanum zirconate titanate ceramics (PLZT) are well known for their excellent dielectric, piezoelectric and ferroelectric properties. In this study, PLZT 9/70/30, 9/65/35 and 9/60/40 ceramics were prepared by vibro-milling mixed-oxide method. All compositions of powders were uniaxial pressed in pellets and sintered at the temperatures of 1200–1275 °C with various soaking times of 2, 4 and 6 h. The X-ray diffraction (XRD) patterns confirmed that all the PLZT samples had perovskite structure with ZrO₂ as a second phase and PLZT/ZrO₂ composite structure was formed. Dielectric behavior at the frequency of 1 kHz showed broad peak indicating relaxor ferroelectric behavior and the difference of the temperature at maximum dielectric at different frequencies increased when Zr:Ti ratio increased. Polarization with electric field (P-E loop) at room temperature showed that when Zr:Ti ratio increased, the coercive field decreased resulting from crystal structure change from tetragonal to rhombohedral. Induced strain with electric field depended on microstructure where the value of S_max/E_max tended to decrease with increasing grain size. It can be concluded that dielectric and ferroelectric behavior predominantly depended on composition of PLZT ceramics and induced strain behavior predominantly depended on grain size of PLZT ceramics.     

Synthesis and electrical properties of lead-free piezoelectric Bi0.5Na0.5TiO3 thin films prepared by Sol-Gel method

Lead-free Bi_0.5Na_0.5TiO₃ (BNT) piezoelectric thin films were deposited on Pt/TiO_x/SiO₂/Si substrates by Sol-Gel method. A dense and well crystallized thin film with a perovskite phase was obtained by annealing the film at 700 °C in a rapid thermal processing system. The relative dielectric constant and loss tangent at 12 kHz, of BNT thin film with 350 nm thickness, were 425 and 0.07, respectively. Ferroelectric hysteresis measurements indicated a remnant polarization value of 9 μC/cm² and a coercive field of 90 kV/cm. Piezoelectric measurements at the macroscopic level were also performed: a piezoelectric coefficient (d_33effmax) of 47 pm/V at E = 190 kV/cm was obtained. The piezoresponse force microscopy data confirmed that BNT thin films present ferroelectric and piezoelectric behavior at the nanoscale level.     

Structural,microstructural, ferroelectric and photoluminescent properties of praseodymium modified Ba0.98Ca0.02Zr0.02Ti0.98O3 ceramics

The ‘x’ wt% (x = 0, 0.02, 0.04 and 0.06) Pr₆O₁₁ modified Ba_0.98Ca_0.02Zr_0.02Ti_0.98O₃ (BCZT – x Pr) piezoelectric ceramics have been fabricated by the solid state reaction method with sintering at 1450 °C (x = 0) and 1350 °C (0.02 ≤ x ≤ 0.06) for 2 h. The impact of Pr concentration on the structural, microstructural, photoluminescence and ferroelectric properties has been systematically investigated. The x-ray diffraction (XRD) patterns revealed the co-existence of tetragonal and orthorhombic phases at room temperature upto x = 0.04 Pr concentration. The grain size was found to decrease upto x = 0.04 Pr content. Room temperature Raman spectroscopy results were consistent with the XRD results. The photoluminescence (PL) spectra showed significant emissions consisting of strong blue (489 nm), green (528 nm) and red (649 nm) wavelengths. The emission intensities of PL spectrum were strongly Pr concentration dependent and a maximum value was obtained for 0.04 Pr modified BCZT ceramic. Further, a large remnant polarization (2P_r ~ 13 µC/cm²) and low coercive field (E_C ~ 22 V/cm) were obtained for BCZT – 0.04 Pr ceramic. The crystal structure and microstructure affect the photoluminescence and ferroelectric properties. Such properties of 0.04 Pr modified BCZT ceramic make it the potential candidate for novel integrated and multifunctional devices.     

Polarization-induced electro resistance and magneto resistance in La0.67Ca0.33MnO3/BaTiO3 composite film

La_0.67Ca_0.33MnO₃/BaTiO₃ composite films have been grown on Nb-doped SrTiO₃ substrates by the sol–gel method. The magnetic and ferroelectric properties in the composite films are investigated. A three-state memory is formed by applying a vertical electric field across the La_0.67Ca_0.33MnO₃/BaTiO₃ heterostructure, this behavior is attributed to the polarization-mediated resistive switching effect. In addition, the transport properties of La_0.67Ca_0.33MnO₃ thin film can be modulated by an external magnetic field, a 10.3 K shift of the metal insulator transition temperature is obtained with the change of applied magnetic field from 0 T to 6 T. Consequently, in La_0.67Ca_0.33MnO₃/BaTiO₃ heterostructure, the resistance behavior can be modulated by piezoelectric effect, ferroelectric polarization and magnetic field simultaneously.     

Enhanced electrocaloric effect and energy-storage performance in PBLZT films with various Ba2+ content

(100)-oriented Pb_(0.90−x)Ba_xLa_0.10Zr_0.90Ti_0.10O₃ (x=0, 0.02, 0.05 and 0.11) antiferroelectric thick films were deposited on LaNiO₃/Si (100) substrates by the sol-gel process. The influences of Ba²⁺ content on the dielectric properties, electrocaloric effect (ECE), energy-storage performance and leakage current were systematically investigated. With Ba²⁺ content increasing, the temperature (T_m) corresponding to the maximum dielectric constant of the thick films was decreased, while their diffuseness was increased. The maximum ECE ∆T=18.1 °C was obtained in the thick film with x=0.05 at room temperature under ∆E=700 kV/cm. The maximum energy storage density of 42.3 J/cm³ and the corresponding efficiency of 68% was achieved in the film with x=0.11, companied by a power density of 0.53 MW/cm³, due to its high breakdown strength. In addition, a small leakage current density (<10⁻⁵ A/cm²) were attained in these films at room temperature. In conclusion, we believe that this kind of antiferroelctric thick film is a potential candidate for applications in solid cooling devices and the energy-storage systems.     

Controlling microstructure and film growth of relaxor-ferroelectric thin films for high break-down strength and energy-storage performance

The relaxor ferroelectric Pb_0.9La_0.1(Zr_0.52Ti_0.48)O₃ (PLZT) thin films were deposited using pulsed laser deposition, and their microstructures, break-down field strengths and energy storage performances were investigated as a function of the buffer layer and electrode. A large recoverable energy-storage density (U_reco) of 23.2 J/cm³ and high energy-storage efficiency (η) of 91.6% obtained in the epitaxial PLZT film grown on SrRuO₃/SrTiO₃/Si are much higher than those in the textured PLZT film (U_reco = 21.9 J/cm³, η = 87.8%) on SrRuO₃/Ca₂Nb₃O₁₀-nanosheet/Si and the polycrystalline PLZT film (U_reco = 17.6 J/cm³, η = 82.6%) on Pt/Ti/SiO₂/Si, under the same condition of 1500 kV/cm and 1 kHz, due to the slim polarization loop and significant antiferroelectric-like behavior. Owing to the high break-down strength (BDS) of 2500 kV/cm, a giant U_reco value of 40.2 J/cm³ was obtained for the epitaxial PLZT film, in which U_reco values of 28.4 J/cm³ (at BDS of 2000 kV/cm) and 20.2 J/cm³ (at BDS of 1700 kV/cm), respectively, were obtained in the textured and polycrystalline PLZT films. The excellent fatigue-free properties and high thermal stability were also observed in these films.     

Influence of oxygen atmosphere annealing on the thermal stability of Mn1.2Co1.5Ni0.3O4±δ ceramic films fabricated by RF magnetron sputtering

This paper presents the optimal atmosphere annealing conditions for Mn_1.2Co_1.5Ni_0.3O_4±δ ceramic thin films fabricated by the RF magnetron sputtering method. The microstructure and oxygen distribution, together with electrical properties, are combined and applied for determining thermal stability. All of the Mn_1.2Co_1.5Ni_0.3O_4±δ films, which are annealed at various oxygen atmosphere from 1 × 10^?3 to 1 × 10⁵ Pa, exhibit a negative temperature coefficient characteristic and show a poly-crystalline spinel structure. The film which annealed at 10 Pa with the most uniform and most dense surface morphology has the minimum resistivity compared to the others. It is characterized by the highest Mn³⁺ and Mn⁴⁺ pair content, which gives the highest carrier concentration of ceramic films. Combined with the aging test at 125 °C for 500 h, the films annealed at 10 Pa have the minimum resistance drift (ΔR/R₀ = 2.35%), which is mainly affected by the oxygen vacancy concentration. This demonstrates that the film thermistors annealed in a hypoxia state will never be stable. This is because there will be several oxidation reactions leading to a continuous generation of cationic vacancies during high temperature aging. The present results will open a way to design desired stable negative temperature coefficient thermistors by adjusting the annealing oxygen atmosphere of films.     

High tunability in (1 1 0)-oriented BaZr0.2Ti0.8O3 (BTZ) lead-free thin films fabricated by pulsed laser deposition

Using a pulsed laser deposition method the BaZr_0.2Ti_0.8 O₃ (BTZ) lead–free thin films with a thickness of ~250 nm were grown on FTO, ITO and Pt–Si substrates, respectively. The analysis results of microstructural, dielectric properties and leakage current reveal that the thin films deposited on Pt–Si substrates are oriented growth along the (1 1 0) direction and exhibit the optimal performance characteristics. Calculations of figure of merit (FoM) and dielectric tunability display a maximum value of ~42.8 and ~68.5% at E = 400 kV/cm at room temperature, respectively. The excellent tunable properties, high dielectric constant (~635@ 100 kHz) and low leakage current density of (9.3 × 10^–8 A/cm² at 400 kV/cm) make the (1 1 0)–oriented BaZr_0.2Ti_0.8 O₃ thin film to be an attractive material for applications of tunable devices.     

Effects of Nd3+-substitution for Bi-site on the leakage current,ferroelectric and dielectric properties of Na0.5Bi0.5TiO3 thin films

Perovskite Na_0.5(Bi_1?xNd_x)_0.5TiO₃ (x = 0, 0.01, 0.03, 0.05; xNd: NBT) ferroelectric films were synthesized on indium tin oxide (ITO)/glass substrates via chemical solution deposition. Structural characterization shows the similar phase-pure perovskite structures in all the films and gradually decreased grain sizes with Nd³⁺ doping amount increasing. For all the films, the leakage behaviors are dominant by the Ohmic conduction in low electric field region and interface-limited Fowler-Nordheim tunneling mechanism in high electric field region. Additionally, the space-charge-limited conduction is involved in 0.03Nd: NBT sample. Compared with the sample of x = 0, the resistivity can be improved through Nd³⁺-substitution in NBT. Enhanced ferroelectricity can be obtained from the dynamic polarization-electric field test, and the reversible domains switching in film can be confirmed by static dielectric constant-electric field measurement. Especially, the 0.03Nd: NBT possesses optimal electrical performances with a large remanent polarization (P_r = 26.7 μC/cm²) and a high dielectric tunability (19.6% at 100 kHz).     

The phase formation process of Bi0.5(Na0.8K0.2)0.5TiO3 thin films prepared using the sol-gel method

Lead-free Bi_0.5(Na_0.8K_0.2)_0.5TiO₃ (abbreviated as BNKT) thin films were grown on Pt(111)/Ti/SiO₂/Si substrates using a sol-gel/spin coating technique and were then annealed at different temperatures (350 °C, 550 °C, 750 °C and 850 °C). Analysis of the XRD patterns and FT-IR spectra were used to determine the main reactions and the phase formation process of BNKT thin films during the sol-gel process. The results show that the dielectric constant of the thin films attains a maximum at a set temperature and then decreases at higher annealing temperatures, which can be attributed to phase formation and transformation. Moreover, the morphologies of the BNKT thin films improve with the increase in grain size and the formation of distinct grain boundaries. Furthermore, through increasing the pH of the precursor solutions, the size of the sol-gel colloidal particles increases slightly and the grains formed from the corresponding solutions tend to be small and uniform.     

Low-temperature-sintered Bi0.5Na0.5TiO3-based lead-free ferroelectric ceramics with good piezoelectric properties

Li₂CO₃ has been used as a sintering aid for fabricating lead-free ferroelectric ceramic 0.93(Bi_0.5Na_0.5TiO₃)-0.07BaTiO₃. A small amount (0.5 wt%) of it can effectively lower the sintering temperature of the ceramic from 1200 °C to 980 °C. Unlike other low temperature-sintered ferroelectric ceramics, the ceramic retains its good dielectric and piezoelectric properties, giving a high dielectric constant (1570), low dielectric loss (4.8%) and large piezoelectric coefficient (180 pC/N). The “depolarization” temperature is also increased to 100 °C and the thermal stability of piezoelectricity is improved. Our results reveal that oxygen vacancies generated from the diffusion of the sintering aid into the lattices are crucial for realizing the low temperature sintering. Owing to the low sintering temperature and good dielectric and piezoelectric properties, the ceramics, especially of multilayered structure, should have great potential for practical applications.     

Thickness dependent growth and ferroelectric/dielectric properties of phase-pure 0.65Pb(Mg1/3Nb2/3)O3-0.35PbTiO3 thin film derived from a modified sol-gel process

Annealing parameter and thickness are two significant factors affecting microstructure and electrical performance of sol-gel derived 0.65Pb(Mg_1/3Nb_2/3)O₃?0.35PbTiO₃ (0.65PMN-0.35PT) thin film. In this paper, various durations are firstly selected for the investigations on annealing parameter of 0.65PMN-0.35PT thin film. Enhanced insulating and ferroelectric properties can be obtained for the film annealed for 1 min due to its phase-pure and homogeneous perovskite structure. Based on this, a series of 0.65PMN-0.35PT thin films with various thicknesses by modifying deposition layer are synthesized annealed for 1 min and the effects of thickness on crystalline, insulating, ferroelectric and dielectric properties are characterized. It reveals that thickness-dependent behavior can be noticed for 0.65PMN-0.35PT thin film with the results that the 8-layered film possesses a relative large remanent polarization (P_r) of 23.34 μC/cm², and reduced leakage current density of 10^?9 A/cm² with low dissipation factor (tanδ) of 0.03 can be achieved for the 14-layered film.     

Hierarchical Li4Ti5O12 nanosheet arrays anchoring on carbon fiber cloth as ultra-stable free-standing anode of Li-ion battery

A flexible, free-standing composite anode with Li₄Ti₅O₁₂ nanosheet arrays anchoring on plain-weaved carbon fiber cloth (LTO@CC) is prepared by a hydrothermal and post-annealing process assisted by a TiO₂ seed layer. The LTO@CC anode free from polymeric binder and conducting agent exhibited much higher lithium storage capacity and cycling stability than the conventional slurry-processed electrode using the dandelion-like Li₄Ti₅O₁₂ microspheres prepared by the same hydrothermal process. A high specific capacity of 128.8 mA h g^?1 was obtained at a current rate of 30 C (1 C = 175 mA g^?1), and almost negligible capacity loses was observed when the cell was cycled at 10, 20 and 30 C each for 100 cycles. The carbon fiber matrix contributed to Li storage at low current rate, but the LTO nanosheet arrays have played the dominant role on the excellent rate capability. The improved electrochemical performance can be attributed to the synergetic effect between the hierarchical Li₄Ti₅O₁₂ nanosheet arrays and the carbon fiber matrix, which integrated short Li⁺ diffusion length, three-dimensional conductive architecture and well preserved structural integrity during the high rate and repeated charge-discharge measurements.     

Tetragonal Er3+-doped (K0.48Na0.48Li0.04)(Nb0.96Bi0.04)O3: Lead-free ferroelectric transparent ceramics with electrical and optical multifunctional performances

The lead-free Er³⁺-doped (K_0.48Na_0.48Li_0.04)(Nb_0.96Bi_0.04)O₃ (KNLNB-Er-x) ceramics were fabricated by conventional pressureless sintering. They possess a tetragonal perovskite phase with dense microstructure. High transmittances of the ceramics are obtained both in the visible and infrared regions. The optical band gap energies of them are 3.07–3.11 eV, close to other KNN-based materials. The relaxor-like characteristics, good dielectric, ferroelectric and piezoelectric properties of the ceramics have been obtained. The up-conversion photoluminescence spectra have been studied and obvious color-tunable emissions have been observed by modulating temperature. The fluorescence intensity ratio (FIR) value based on green emissions at 533 and 555 nm in the temperature ranging from 300 to 750 K have been investigated, giving the maximum sensitivity of ~ 0.0038 K^?1. Furthermore, the FIR technique opens up a method to detect the Curie temperature of the ceramics. Owing to both optical and electrical properties, the KNLNB-Er-x transparent ceramics could be a promising candidate in the application of color-tunable solid-state lightings, optical temperature sensors, and electrical-optical coupling devices.     

Synthesis and oxidation behavior of (Mo0.97Nb0.03)(Si0.97Al0.03)2 ceramic

(Mo_0.97Nb_0.03)(Si_0.97Al_0.03)₂ ceramic was synthesized by self-propagating high-temperature synthesis using commercial elemental powders, and then dense monolithic ceramic was prepared via vacuum hot pressing. The oxidation behavior of the bulk ceramic was investigated at 500 °C and 1200 °C. At 500 °C, due to the preferential oxidation of Nb-rich phase and the formation of uniform oxidation layer, the oxidation rate of (Mo_0.97Nb_0.03)(Si_0.97Al_0.03)₂ is lower than pure MoSi₂. At 1200 °C, (Mo_0.97Nb_0.03)(Si_0.97Al_0.03)₂ shows better oxidation resistance than MoSi₂, owing to the uniform complex oxide layer with SiO₂, Al₂O₃ and Nb₂O₅ formed on the surface of the prepared ceramic.     

Controlling metal-insulator transition in (010)-VO2/(0001)-Al2O3 epitaxial thin film through surface morphological engineering

Surface morphological control of the metal-insulator transition behaviors of VO₂ epitaxial thin films is achieved by annealing substrates of (0001)-Al₂O₃ single crystals. The well-defined terraces of the (0001)-Al₂O₃ substrates are formed by annealing in air at 1200 °C. Correspondingly, the surface roughness dramatically decreases in the VO₂ epitaxial thin films on the annealed substrates, compared with that on the unannealed substrates. The order of magnitude of the resistivity change ratio (~ 10²) of annealed samples across the metal-insulator transition (MIT) decreases by a factor of one, compared with that (~ 10³) in unannealed samples. This result is ascribed to grain size effect in the VO₂ epitaxial thin films. Moreover, the MIT temperature is reduced in the annealed samples with various thickness, compared with the unannealed ones. A reduction of 14.4 K of the MIT temperature is observed in the thinnest VO₂ films on the annealed substrates, compared with the unannealed samples. This behavior results from a compressive strain along the V-V atom chains in the annealed samples, which modifies the orbital occupancy of the V⁴⁺ ions. While increasing the film thickness, the MIT change ratio keeps on the order of magnitude 10², and the MIT temperatures of the VO₂ films on the annealed substrates becomes closer and closer to those of the unannealed samples due to the weakened substrate effect. This work suggests a promising approach to decrease the MIT temperature and still maintain a moderate change ratio for the MIT, potentially enabling room-temperature electronic devices based on VO₂ thin films.