Silicon-Based Integrated Optic Pressure Sensor Using Intermodal Interference between TM-Like and TE-Like Modes

In this paper, a silicon-based integrated optic pressure sensor using an intermodal interference between the fundamental TM-like and TE-like modes is described. The sensor consists of a micromachined rectangular diaphragm and a straight polystyrene optical waveguide passing over the diaphragm. Its sensitivity is theoretically known to be strongly dependent on the position of the waveguide over the diaphragm. To experimentally investigate such dependence, we fabricated a sensor with a 1.2 mm 2 10 mm 2 20 w m diaphragm, over which waveguides were placed at 50 w m intervals. The measured phase sensitivity was 98 mrad/kPa for the waveguide nearest to the diaphragm edge. The measurement was also carried out for the other waveguides. As theoretically expected, the largest sensitivity was obtained for the waveguide nearest to the edge.     

Integrated Optic Pressure Sensor Using Intermodal Interference between Two Mutual Orthogonal Guided-Modes

We theoretically and experimentally investigated fundamental characteristics of an integrated optic pressure sensor using intermodal interference between the lowest-order TM-like and TE-like modes. The sensor consists of a rectangular diaphragm and a straight single-mode waveguide along an edge of the diaphragm. Its operation is based on a difference of phase retardations produced in the two guided modes through the photoelastic effect. The sensor was fabricated by bonding two glass substrates together: a Corning 0211 glass 300 μMm thick to form a waveguide and a thick substrate with a 10 mm × 10 mm square hole to define the diaphragm. The fabricated sensor was successfully tested using a He-Ne laser at 633 nm. The halfwave pressure was measured to be 77 kPa which is almost double the theoretical estimate.     

Single-mode rib polymer waveguides and electro-optic polymer waveguide switches

Mode-matching and effective index methods are used to analyze single-mode operation of optical rib polymer waveguides. Their single-mode waveguiding conditions are determined. Single-mode rib waveguides fabricated from guest–host polyetherketone are presented. The estimated propagation loss of straight rib-waveguides is 0.7 dB/cm at 1.55 μm. Furthermore, by using the mode field-transfer matrix method, 2×2 and 4×4 polymer Mach–Zehnder interference switch operating at 1.55 μm wavelength has been designed based on optical multi-mode interference.     

A CdS-Si photodetector for integrated optics

Photodetectors based on nCdS-pSi heterojunctions and operated in both photovoltaic and photoconductive models, have been integrated with planar optical waveguides. The detector structure consisted of a 7059 glass waveguide which was terminated over the nCd-pSi junction. Prism couplers and directional coupling action between a ribbon fibre and the glass film have been used to launch light into the waveguides. A maximum responsivity of 1mV·μW^-1 was recorded at 633 nm with the diode operating in the photovoltaic mode and 0.06μA·μW^-1, corresponding to a quantum efficiency of 12%, in the photoconductive mode.     

Design and fabrication of compact 3-dB coupler in silicon-on-insulator

A novel compact 3-dB coupler is proposed and fabricated in silicon-on-insulator. The new coupler provides large output waveguide spacing of 125.0 μm with short device length of 867.0 μm and large cross-section of 6.0 × 4.0 μm. The device length can be remained essentially unchanged even when the output spacing is further enlarged to realize the complex applications in photonic integrated circuits. The fabricated device exhibits excess loss of 6.3 dB and low imbalance of 0.26 dB.     

Development of a 4–15 μm infrared GaAs hyperspectral QWIP imager

In the on-going evolution of GaAs quantum well infrared photodetectors (QWIPs) we have developed a four band, 640 × 512, 23 μm × 23 μm pixel array which we have subsequently integrated with a linear variable etalon (LVE) filter providing over 200 spectral bands across the 4–15.4 μm wavelength region. This effort was a collaboration between NASA’s Goddard Space Flight Center (GSFC), the Jet Propulsion Laboratory (JPL) and the Army Research Laboratory (ARL) sponsored by the Earth Science Technology Office of NASA. The QWIP array was fabricated by graded molecular beam epitaxial (MBE) growth that was specifically tailored to yield four distinct bands (FWHM): Band 1; 4.5–5.7 μm, Band 2; 8.5–10 μm, Band 3; 10–12 μm and Band 4; 13.3–14.8 μm. Each band occupies a swath that comprises 128 × 640 elements. The addition of the LVE (which is placed directly over the array) further divides the four “broad” bands into 209 separate spectral bands ranging in width from 0.02 μm at 5 μm to 0.05 μm at 15 μm. The detector is cooled by a mechanical cryocooler to 46 K. The camera system is a fully reflective, f/4.2, 3-mirror system with a 21° × 25° field of view. The project goals were: (1) develop the 4 band GaAs QWIP array; (2) develop the LVE and; (3) implement a mechanical cryocooler. This paper will describe the efforts and results of this undertaking with emphasis on the overall system characteristics.     

Active semiconductor optical switches with blue-shifted channel waveguides

This paper presents a theoretical design study of active optical switches constructed from III-V semiconductor multiple-quantum-well waveguides. New designs are given for 4 × 4 matrix switches, 1 × 4 tree switches, and 4-delay optical transversal filters. The designs feature ∼ 0 dB insertion loss and ∼ 30 dB crosstalk isolation. Low injection currents are predicted because pumping is eliminated on ∼ 70 percent of the channel waveguide area by an induced-disorder treatment that blue-shifts the material's absorption edge. The active networks also feature etched facet reflectors that facilitate the dense packing of guides.     

Surface electromigration of metals on Si(001): In/Si(001)

The possibility of surface electromigration (SE) of metals of In, Ga, Sb and Ag on a very flat Si(001)2×1 substrate (single domain 2×1) was examined by SEM, μ-RHEED and μ-AES under UHV conditions. It was found that Ga, Sb and Ag show no SE on Si(001) surface even at DC annealing temperatures for the desorption of these metals. For In on Si(001), a very fast SE (8000 μm/min) towards the cathode side was found that suddenly sets in at 450°C DC annealing, which was related to a surface phase transition. μ-RHEED and μ-AES observation showed that the SE is related to an ordered 4×3-In phase together with two-dimensional In gas phase over the 4×3-In phase and an In-disordered phase at the front end of SE. Single domain 4×3-In phases were found to occur under sequences of In deposition and DC annealing which involve the In SE on Si(001).     

Analytical modeling of loss characteristics of a polymer arrayed waveguide grating multiplexer

Theoretical analysis is performed for the loss characteristics of a polymer arrayed waveguide grating (AWG) multiplexer around the central wavelength of 1.55 μm with the wavelength spacing of 1.6 nm. The total loss of the device includes the diffraction loss in the input and output (I/O) slab waveguides, bent loss caused by the AWG and I/O channels, leakage loss resulted from the high refractive index substrate, and propagation loss due to the absorption and scattering of the materials of the device. The effects of some structural parameters on the loss characteristics are investigated and discussed. The computed results show that when we select the core thickness as 4 μm, core width as 6 μm, pitch of adjacent waveguides as 15.5 μm, diffraction order as 50, the number of the arrayed waveguides as 91, that of the I/O channels as 17, confined layer thickness between the core and the substrate as 10 μm, distance between the focal point and the origin as 5500 μm, and central angle between the central waveguide and the x-axis (i.e. the vertical of the symmetrical line of the device) as 60°, the total loss of the device can be dropped to the range 3.79–7.93 dB.     

MBE grown type-II MWIR and LWIR superlattice photodiodes

We report on the status of GaSb/InAs type-II superlattice diodes grown and fabricated at the Jet Propulsion Laboratory designed for infrared absorption 2–5 μm and 8–12 μm bands. Recent LWIR devices have produced detectivities as high as 8 × 10¹⁰ Jones with a differential resistance–area product greater than 6 Ohm cm² at 80 K with a long wavelength cutoff of approximately 12 μm. The measured internal quantum efficiency of these front-side illuminated devices is close to 30% in the 10–11 μm range. MWIR devices have produced detectivities as high as 8 × 10¹³ Jones with a differential resistance–area product greater than 3 × 10⁷ Ohm cm² at 80 K with a long wavelength cutoff of approximately 3.7 μm. The measured internal quantum efficiency of these front-side illuminated MWIR devices is close to 40% in the 2–3 μm range at low temperature and increases to over 60% near room temperature.     

Uncooled microbolometer detector: Recent developments at Ulis

Uncooled infrared focal plane arrays are being developed for a wide range of thermal imaging applications. Therefore, to answer these markets, a 35 μm pixel-pitch uncooled IR detector technology has been developed enabling high performance 160 × 120 and 384 × 288 arrays production. Besides a wide-band version from uncooled 320 × 240/45 μm array has been also developed in order to address process control and more precisely industrial furnaces control. The ULIS amorphous silicon technology is well adapted to manufacture low cost detector in mass production. After some brief microbolometer technological background, we present the characterization of 35 μm pixel-pitch detector as well as the wide-band 320 × 240 infrared focal plane arrays with a pixel pitch of 45 μm. Information on the new 640 × 480 array with a pixel pitch of 25 μm is also presented.     

Evaluation of optical loss minima in thallium halide crystals

Fundamental optical losses in the highly transparent region for thallium halide KRS-6 and KRS-5 crystals were evaluated. The projected loss minima are 12 × 10^--⁴ dB/ km at 7.9 μm for KRS-6 and 7 × 10^--⁴ dB/km at 12.9 μm for KRS-5 crystals. The material dispersion becomes zero near 5.05 μm for KRS-6 and near 6.62 μm for KRS-5 crystals.     

Domain wall pinning in polycrystalline perovskite La0.7Sr0.3MnO3

Reversible and irreversible domain wall (DW) motions have been investigated in La_0.7Sr_0.3MnO₃ ceramic samples using frequency-response complex permeability with various amplitudes of AC field. We also examine the effects of temperature in the range from 293 to 368 K and transverse DC magnetic field with a maximum of 4.40×10⁵ A/m on the real part of permeability (μ′). Two relaxations corresponding to reversible wall motions and domain rotations occur in low and high frequency regions, respectively. The irreversible DW displacements can be activated as the amplitude larger than the pinning field of 3 A/m, leading to an increase in μ′. The μ′ obeys a Rayleigh law at the temperature below 343 K or under DC field of less than 4.22×10⁴ A/m. The Rayleigh constant η increases from 5.45×10⁻² to 1.54×10⁻¹ (A/m)⁻¹ as the temperature rises from 293 to 343 K, and η decreases from 5.58×10⁻² to 3.67×10⁻² (A/m)⁻¹ with increasing DC field from 1.99×10³ to 4.22×10⁴ A/m.     

Imaging biological specimens with the confocal scanning laser microscope/macroscope

A new confocal scanning laser microscope/macroscope (cslm/M) has recently been developed. It combines in one instrument the high resolution capability of a confocal scanning beam microscope for imaging small specimens, with good resolution confocal imaging of macroscopic specimens. Some of its main features include: (a) 0.25 μm lateral resolution in the microscope mode and 5 μm lateral resolution in the macroscope mode; (b) a field of view that can vary from 25 μm × 25 μm to 75,000 μm × 75,000 μm; (c) capability for acquiring large data sets from 512 × 512 pixels to 2048 × 2048 pixels; (d) 0.5 μm depth resolution in the microscope mode and 200 μm depth resolution in the macroscope mode.

In this work the cslm/M was used to image whole biological specimens (> 5 m diameter), including insects which are ideal specimens for the macroscope. Specimens require no preparation, unlike scanning electron microscope (SEM) specimens which require a conductive coating. The specimens described in this paper are too large to be imaged in their entirety by a scanning beam laser microscope, however they can be imaged by slower scanning stage microscopes. In the macroscope mode the cslm/M was used to acquire a large number (e.g. 20–40) of confocal image slices which were then used to reconstruct a three-dimensional image of the specimen. High resolution images were collected by the cslm/M by switching to the microscope mode where high numerical aperture (NA) objectives were used to image a small area of interest. Reflected-light and fluorescence images of plant and insect specimens are presented which demonstrate the morphological details obtained in various imaging modes. A process for three-dimensional visualization of the data is described and images are shown.     

Solvent detection using porous silicon optical waveguides

Since the first report on the use of porous silicon as an optical waveguide medium in 1995, significant development has been made towards the understanding and applicability of such material. Here, the introduction of solvents (acetone, methanol, and propan-2-ol) into the pores is shown to dramatically reduce the loss of the waveguides, in a reversible manner. Both the magnitude and duration of this effect are sensitive to the solvent introduced. In some waveguides, for example, the measured loss (at 0.633 μm) falls by as much as 34 dB cm⁻¹ on the introduction of acetone. Theoretical estimates of the effect of solvents on the interfacial scattering loss confirm this as the origin of the observed reductions. These results, combined with the fact that a substantial portion of the guided-mode field interacts with the solvent, indicate an enhanced sensitivity for sensor applications may be achievable.     

Limiting efficiencies of second-harmonic generation and cascaded χ processes in quadratically nonlinear photonic nanowires

Quadratically nonlinear waveguides with subwavelength core dimensions are shown to provide limiting efficiencies of second-harmonic generation and three-wave mixing, as well as cascaded χ⁽²⁾ nonlinear-optical interactions. Small-core waveguides made of high-χ⁽²⁾ materials, such as gallium arsenide and indium phosphide, are shown to allow anomalous dispersion to be achieved within the range of wavelengths from 1.3 to 2.0 μm, with the wavelength of zero group-velocity dispersion controlled by the size of the waveguide core.     

Implementation of photomasks for guided wave optical components by a step-and-repeat process

The fabrication of photomasks for integrated optical (i.o.) components presents the particular difficulty of an extreme aspect ratio. It is shown that this problem can often be solved by a synthesizing procedure using a photorepeater. This method is demonstrated for two different versions of i.o. directional couplers (total length 20 mm, width of waveguides 3 μ, width of coupling gap between waveguides 3 μ). Single characteristic parts of the masks, which are composed on the reticle, are joined together by a step-and-repeat process. Residual imperfections of junctions can be neglected for diffused waveguides. Further advantages of the method (constant width of the waveguide and of the separating gap along the total length) are explained. Finally, the i.o. directional couplers produced are examined, and some of their characteristic parameters are described.     

640 × 512 pixel narrow-band, four-band, and broad-band quantum well infrared photodetector focal plane arrays

A 9 μm cutoff 640 × 512 pixel hand-held quantum well infrared photodetector (QWIP) camera has been demonstrated with excellent imagery. A noise equivalent differential temperature (NEDT) of 10.6 mK is expected at a 65 K operating temperature with f/2 optics at a 300 K background. This focal plane array has shown background limited performance at a 72 K operating temperature with the same optics and background conditions. In this paper, we discuss the development of this very sensitive long-wavelength infrared camera based on a GaAs/AlGaAs QWIP focal plane array and its performance in quantum efficiency, NEDT, uniformity, and operability. In the second section of this paper, we discuss the first demonstration of a monolithic spatially separated four-band 640 × 512 pixel QWIP focal plane array and its performance. The four spectral bands cover 4–5.5, 8.5–10, 10–12, and 13.5–15 μm spectral regions with 640 × 128 pixels in each band. In the last section, we discuss the array performance of a 640 × 512 pixel broad-band (10–16 μm full-width at half-maximum) QWIP focal plane.     

Development of a 1K × 1K, 8–12 μm QWIP array

In the on-going evolution of GaAs quantum well infrared photodetectors (QWIPs) we have developed a 1,024 × 1,024 (1K × 1K), 8–12  μm infrared focal plane array (FPA). This 1 megapixel detector array is a hybrid using an L3/Cincinnati Electronics silicon readout integrated circuit (ROIC) bump bonded to a GaAs QWIP array fabricated jointly by engineers at the Goddard Space Flight Center (GSFC) and the Army Research Laboratory (ARL). We have integrated the 1K × 1K array into an SE-IR based imaging camera system and performed tests over the 50–80 K temperature range achieving BLIP performance at an operating temperature of 57 K. The GaAs array is relatively easy to fabricate once the superlattice structure of the quantum wells has been defined and grown. The overall arrays costs are currently dominated by the costs associated with the silicon readout since the GaAs array fabrication is based on high yield, well-established GaAs processing capabilities. One of the advantages of GaAs QWIP technology is the ability to fabricate arrays in a fashion similar to and compatible with silicon IC technology. The designer’s ability to easily select the spectral response of the material from 3 μm to beyond 15 μm is the result of the success of band-gap engineering and the Army Research Lab is a leader in this area. In this paper we will present the first results of our 1K × 1K QWIP array development including fabrication methodology, test data and imaging capabilities.     

Near-infrared absorptions of monomethylhydrazine

The peak absorption coefficients for two near-infrared absorptions of monomethylhydrazine, CH₃-N₂H₃, (MMH) were measured. Absorption bands located at 1.524 μm (6560 cm^-1), 1.557 μm (6423 cm^-1), and 1.583 μm (6316 cm^-1) are assigned to the υ = 2 overtones of the infrared N-H stretching fundamentals at 3317, 3245 and 3177 cm^-1. An absorption band located at 1.04 μm (9620±100 cm^-1) is assigned to the υ = 3 overtone of one of these fundamentals. The peak absorption coefficients (₁₀) at 1.524 μm (6560±20 cm^-1) and 1.04 μm (9620±100 cm^-1) are 31 × 10^-3 and 0.97 × 10^-3 (cm atm)^-1, respectively. Uncertainties in these coefficients were estimated to be less than ±20% due primarily to uncertainties in the partial vapor pressure of MMH.