溅射功率对AZO／Cu／AZO多层薄膜结构与光电性能的影响

在玻璃衬底上利用磁控溅射法制备AZO／Cu／AZO多层薄膜,研究了溅射功率对AZO薄膜的微观结构和光电性能的影响。采用X射线衍射（XRD）仪、扫描电子显微镜（SEM）、紫外可见光谱仪（UVVis）等方法,对AZO薄膜的形貌结构、光电学性能进行了测试。结果表明：不同溅射功率下沉积的AZO薄膜均呈C轴择优取向,溅射功率对AZO／cu／AZO多层薄膜结构与光电性能有一定的影响。在溅射功率为120W、衬底温度为2500C、溅射气压为0．5Pa时薄膜的光透过率为75％,最低电阻率为2．2×10-4Ω·cm、结晶质量、表面形貌等得到明显改善。     

PET纤维基AZO透明导电薄膜溅射工艺参数的优化

室温下,结合正交实验表,用射频磁控溅射在涤纶(PET)非织造布基材上生长AZO(Al2O3:ZnO)纳米结构薄膜.采用四探针测量仪测试AZO薄膜的方块电阻,用原子力显微镜(AFM)分析薄膜微结构;通过正交分析法对实验L9(33)AZO薄膜的性能指标进行分析.实验结果表明:溅射厚度对AZO薄膜导电性能起主导作用,其次为氩气压强和溅射功率;同时,得出制备AZO薄膜的最佳工艺为:溅射功率150W、厚度100m和气压0.2Pa,该参数下样品的方块电阻为1.633×103Ω,AZO纳米颗粒的平均直径约为69.4nm.     

室温下射频磁控溅射制备ZnO:Al透明导电薄膜及其性能研究

采用射频磁控溅射技术,在室温下,以ZnO:Al2O3(2%Al2O3(质量比))为靶材,在石英玻璃基底上,采用不同工艺条件制备了ZnO:Al(AZO)薄膜。使用扫描电子显微镜观察了薄膜的表面形貌,X射线衍射分析了薄膜的结构,四探针测量仪得到薄膜的表面电阻,轮廓仪测量了薄膜厚度,并计算了电阻率,最后采用分光光度计测量了薄膜的透过率;研究了溅射功率、溅射气压与薄膜厚度对薄膜电阻率及透过率的影响。结果表明:所制备的AZO薄膜具有(002)择优取向,并且发现薄膜厚度对薄膜的光电性能有明显影响,溅射气压和溅射功率对薄膜电学性能有较大影响,但是对薄膜透过率影响不大。当功率为1kW、溅射气压0.052Pa、AZO薄膜厚度为250nm时,其电阻率为8.38×10-4Ω·cm,波长在550nm处透过率为89%,接近基底的本底透过率92%。当薄膜厚度为1125 nm时薄膜的电阻率降至最低(6.16×10-4Ω·cm)。     

CoTaZr薄膜的制备及结构研究

室温下采用直流磁控溅射法在玻璃基片上沉积CoTaZr薄膜。利用EDS、SEM、XRD等方法研究溅射气压、功率对CoTaZr薄膜成分、生长形貌和组织结构的影响。结果表明,溅射功率为96W时,沉积制备的薄膜成分随Ar气压变化不大,薄膜成分基本稳定。在溅射气压为2Pa、功率为96W时,成功制备出具有非晶+纳米晶结构的CoTaZr薄膜。在2Pa时,随着功率的增大,薄膜由1区、T区向3区转变;在96W时,随着气压的增大,薄膜由3区向T区或1区转变。     

基于神经网络的AZO薄膜制备工艺参数的正交优化设计

采用磁控溅射法制备AZO薄膜,研究和讨论了溅射功率、溅射时间和溅射气压3个工艺参数对AZO薄膜光学和电学性能的影响。采用正交优化设计,对3个工艺参数进行优化,测量了透射率和电阻率,以此作为薄膜光电性能的评价指标,通过极差值分析确定了制备薄膜的最佳工艺参数。影响薄膜透射率的最主要因素为溅射气压;影响电阻率的最主要因素为溅射时间。获得制备高透射率低电阻率的AZO薄膜的最佳工艺组合方案为溅射功率为400W、溅射时间为1000s、溅射气压为1.0Pa。将反馈型(BP)神经网络应用于磁控溅射AZO薄膜光学性能(可见光区的平均透射率)和电学性能(电阻率)的研究。输入样品数据对神经网络进行训练,建立AZO薄膜光电性能随溅射参数变化的预测模型。     

室温下射频磁控溅射制备ZnO∶Al透明导电薄膜及其性能研究

采用射频磁控溅射技术,在室温下,以ZnO∶Al203(2％Al2O3(质量比))为靶材,在石英玻璃基底上,采用不同工艺条件制备了ZnO∶Al(AzO)薄膜.使用扫描电子显微镜观察了薄膜的表面形貌,X射线衍射分析了薄膜的结构,四探针测量仪得到薄膜的表面电阻,轮廓仪测量了薄膜厚度,并计算了电阻率,最后采用分光光度计测量了薄膜的透过率;研究了溅射功率、溅射气压与薄膜厚度对薄膜电阻率及透过率的影响.结果表明:所制备的AZO薄膜具有(002)择优取向,并且发现薄膜厚度对薄膜的光电性能有明显影响,溅射气压和溅射功率对薄膜电学性能有较大影响,但是对薄膜透过率影响不大.当功率为1kW、溅射气压0.052 Pa、AZO薄膜厚度为250nm时,其电阻率为8.38×10-4Ω·cm,波长在550 nm处透过率为89％,接近基底的本底透过率92％.当薄膜厚度为1125 nm时薄膜的电阻率降至最低(6.16×10-4 Ω·cm).     

射频溅射工艺参数对AZO薄膜结构和性能的影响

采用射频磁控溅射法制备了掺铝氧化锌(AZO)薄膜,研究了衬底温度及溅射工作压强对沉积薄膜的晶体结构、表面形貌及电学性能的影响。结果显示,随衬底温度增加,薄膜的结晶结构发生显著变化,而溅射工作气压增加主要影响沉积薄膜(103)面与(002)面的相对强度。薄膜的表面形貌受温度影响严重,而气压对形貌的影响相对较小。衬底温度增加,薄膜的电阻率急剧降低,迁移率和载流子浓度都显著增加,而工作气压增加则导致电阻率先减小后增大。     

MgO(001)基片上沉积Ni-Mn-Ga薄膜相变行为和磁性能研究

采用室温沉积高温退火的方式在单晶MgO(001)基片上制备了具有马氏体相变的铁磁Ni-Mn-Ga薄膜。沉积态薄膜呈柱状晶结构,高温退火后柱状晶的晶界变得模糊。溅射气压为0.5Pa和0.2Pa的薄膜的马氏体相变起始温度分别为290K和332K,溅射气压改变了薄膜成分,进而改变了相变温度。根据300K测得的磁化曲线,退火后溅射气压为0.5Pa和0.2Pa的薄膜分别显示出软磁和硬磁特性,这与M-T曲线的结果是相符的。室温下,0.5Pa薄膜的磁畴形貌呈现出迷宫状;而0.2Pa样品则显现出马氏体的浮凸,与它的磁畴形貌直接关联。     

直流溅射工艺参数对Mo薄膜结构及电性能的影响

采用直流磁控溅射法在SLG衬底上沉积Mo薄膜,对不同溅射功率和溅射工作气压下沉积的薄膜进行X射线衍射、SEM(扫描电子显微镜)、电阻率测试,讨论了工艺参数对沉积Mo薄膜相结构、表面微观形貌、薄膜沉积速率和电学性能的影响。结果表明,随着溅射功率的增加,薄膜的结晶性能变好,沉积速率提高,在沉积功率范围内薄膜均匀致密,表面无空隙,电阻率较低;随着溅射工作气压增加,薄膜结晶性能变差,沉积速率先增加后降低,在沉积工作气压范围内,薄膜致密;随气压降低,电阻率急剧减小。因此,较高的溅射功率和较低的工作气压沉积的Mo薄膜更适合作CIGS薄膜太阳电池的BC层(背接触层)。     

射频磁控反应溅射制备Al2O3薄膜的工艺研究

采用射频磁控反应溅射法,以高纯Al为靶材,高纯O2为反应气体,在不锈钢和单晶Si基片上成功地制备了氧化铝(Al2O3)薄膜,并对氧化铝薄膜的沉积速率、结构和表面形貌进行了研究.结果表明,沉积速率随着射频功率的增大先几乎呈线性增大而后缓慢增大;随着溅射气压的增加,沉积速率先增大,在一定气压时达到峰值后继续随气压增大而减小,同时随着靶基距的增大而减小;随着氧气流量的不断增加,靶面溅射的物质从金属态过渡到氧化物态,沉积速率也随之不断降低.X射线衍射图谱表明薄膜结构为非晶态;用原子力显微镜对薄膜表面形貌观察,薄膜微结构为柱状.     

利用脉冲直流磁控溅射制备ZnO:Al薄膜的研究

利用中频脉冲直流磁控溅射法制备了平面ZnO:Al(AZO)透明导电薄膜,研究了沉积压力、衬底温度和溅射功率对AZO薄膜光电性能、薄膜稳定性的影响.结果表明:在较低沉积压力、衬底温度及溅射功率下,可获得具有低电阻率、高透过率、高稳定性的AZO薄膜.     

Ar Pressure Dependence of the Properties of Molybdenum-doped ZnO Films Grown by RF Magnetron Sputtering

Transparent conducting oxide film of molybdenum-doped zinc oxide （MZO） with high transparency and relatively low resistivity was prepared by RF （radio frequency） magnetron sputtering at room temperature. The structural, electrical, and optical properties of the films deposited under different Ar pressure were investigated.XRD （X-ray diffraction） patterns show that the nature of the films is polycrystalline with a hexagonal structure and a preferred orientation along the c-axis. The resistivity increases as Ar pressure increases. The lowest range exceeds 88% for all the samples. The optical band gap decreases from 3.27 to 3.15 eV with increasing Ar pressure from 0.6 to 3.0 Pa.     

Effects of sputtering pressure and Al buffer layer thickness on properties of AZO films grown by rf magnetron sputtering

Transparent and conductive Al-doped (2 wt.%) zinc oxide (AZO) films were deposited on inexpensive soda-lime glass substrates by using rf magnetron sputtering at room temperature. This study analyzed the effects of argon sputtering pressure, which varied in the range from 0.46 to 2.0 Pa, on the morphological, electrical and optical properties of AZO films. The only (0 0 2) diffraction peak of the film were observed at 2θ～34.45°, exhibiting that the AZO films had hexagonal ZnO wurtzite structure, and a preferred orientation with the c-axis perpendicular to the substrate. By applying a very thin aluminum buffer layer with the thickness of 2 nm, findings show that the electrical resistivity was 9.46 × 10⁻⁴ Ω-cm, and the average optical transmittance in the visible part of the spectra was approximately 81%. Furthermore, as for 10 nm thick buffer layer, the electrical resistivity was lower, but the transmittance was decreased.     

磁控溅射制备镁镓共掺氧化锌透明半导体薄膜及其性能研究

以MgO∶Ga_2O_3∶ZnO(2%∶2%∶96%,质量分数)陶瓷靶作为溅射源,采用磁控溅射技术在石英玻璃衬底上制备了镁镓共掺氧化锌(MGZO)透明半导体薄膜。采用XRD、SEM、霍尔效应仪和分光光度计对MGZO薄膜进行测试表征,研究了溅射压强对MGZO薄膜晶体结构、电学性质和光学性能的影响。结果表明:所有MGZO薄膜均为六角纤锌矿结构并具有(002)择优取向生长特性,溅射压强对薄膜晶体结构和光电性能有明显影响,但几乎不影响其直接光学能隙(3.41~3.44eV)。当溅射压强为3.5Pa时,MGZO薄膜的结晶质量最好、张应力最小(8.29×10-2 GPa)、电阻率最低(1.62×10-3Ω·cm)、可见光区平均透过率最高(87.8%)、品质因数最大(4.76×103Ω~(-1)·cm~(-1)),具有最好的光电综合性能。     

Deposition of Al-doped ZnO films on polyethylene naphthalate substrate with radio frequency magnetron sputtering

100 nm Al-doped ZnO (AZO) thin films were deposited on polyethylene naphthalate (PEN) substrates with radio frequency magnetron sputtering using 2 wt.% Al-doped ZnO target at various deposition conditions including sputtering power, target to substrate distance, working pressure and substrate temperature. When the sputtering power, target to substrate distance and working pressure were decreased, the resistivity was decreased due to the improvement of crystallinity with larger grain size. As the substrate temperature was increased from 25 to 120 °C, AZO films showed lower electrical resistivity and better optical transmittance due to the significant improvement of the crystallinity. 2 wt.% Al-doped ZnO films deposited on glass and PEN substrates at sputtering power of 25 W, target to substrate distance of 6.8 cm, working pressure of 0.4 Pa and substrate temperature of 120 °C showed the lowest resistivity (5.12 × 10^− 3 Ω cm on PEN substrate, 3.85 × 10^− 3 Ω cm on glass substrate) and high average transmittance (> 90% in both substrates). AZO films deposited on PEN substrate showed similar electrical and optical properties like AZO films deposited on glass substrates.     

溅射功率对ZnO：Si透明导电薄膜性能的影响

采用直流磁控溅射法在室温玻璃基片上制备出了掺硅氧化锌（ZnO：Si）透明导电薄膜,研究了溅射功率对ZnO：Si薄膜结构、形貌、光学及电学性能的影响,实验结果表明,溅射功率对ZnO：Si薄膜的生长速率、结晶质量及电学性能有很大影响,而对其光学性能影响不大。实验制备的ZnO：LSi薄膜为六方纤锌矿结构的多晶薄膜,且具有垂直于基片方向的c轴择优取向。当溅射功率从45W增加到105W时,薄膜的晶化程度提高、晶粒尺寸增大,薄膜的电阻率减小;当溅射功率为105W时,薄膜的电阻率达到最小值3．83~104n·cm,其可见光透过率为94．41％。实验制备的ZnO：Si薄膜可以用作薄膜太阳能电池和液晶显示器的透明电极。     

氢化及沉积温度对掺铝ZnO透明导电薄膜性能影响

采用射频磁控溅射方法在玻璃衬底上制备了掺铝ZnO透明导电薄膜(AZO)。为了降低AZO薄膜的电阻率, 采用在溅射气氛中通入一定比例H₂的方法对AZO薄膜进行氢化处理, 并研究了溅射气氛中H₂含量及衬底温度对AZO薄膜氢化效果的影响。结果表明: 在低温条件下, 氢化处理能有效降低AZO薄膜的电阻率; 在衬底温度为100℃的低温条件下, 通过调节溅射气氛中H₂的比例, 制备了电阻率为6.0×10^-4 Ω·cm的高质量氢化AZO薄膜, 该电阻值低于同等条件下未氢化AZO薄膜电阻值的1/3; 但随着衬底温度的升高, 氢化处理对薄膜电学性能的改善效果逐渐减弱。     

Reactive DC Magnetron Sputtering Deposition of Copper Nitride Thin Film

Copper nitride thin film was deposited on glass substrates by reactive DC （direct current） magnetron sputtering at a 0.5 Pa N2 partial pressure and different substrate temperatures. The as-prepared film, characterized with X-Ray diffraction, atomic force microscopy, and X-ray photoelectron spectroscopy measurements, showed a composed structure of Cu3N crystallites with anti-ReO3 structure and a slight oxidation of the resulted film.The crystal structure and growth rate of Cu3N films were affected strongly by substrate temperature. The preferred crystalline orientation of Cu3N films were （111） and （200） at RT, 100℃. These peaks decayed at 200℃ and 300℃ only Cu （111） peak was noticed. Growth of Cu3N films at 100℃ is the optimum substrate temperature for producing high-quality （111） Cu3N films. The deposition rate of Cu3N films estimated to be in range of 18-30 nm/min increased while the resistivity and the microhardness of Cu3N films decreased when the temperature of glass substrate increased.