Tapered polymer single-mode waveguides for mode transformation

This paper presents a tapered polymer waveguide structure for coupling light between optical waveguides with differing geometries. Optical fibers, lasers, and other photonic integrated circuit components can be coupled with tapered waveguides. The polymer waveguide performs a mode transformation between different mode shapes and sizes. For example, the mode transformation can be from an elliptical laser diode mode to that of a circular optical fiber mode. The input and output of a tapered waveguide structure are analyzed, for the case of laser to fiber coupling, in order to determine the effect of misalignments on the coupling efficiency. Adiabaticity in waveguide propagation is discussed. The fabrication of our polymer waveguides is also described     

Study of Semiconductor Laser Diode with Circularly Symmetric Waveguide

A semiconductor laser diode with circularly symmetric waveguide is proposed, its property is studied by scalar finite-difference time-domain method (SFD-TDM). The results show coupling loss between the semiconductor laser diode and single mode fiber is reduced effectively, the minimum coupling loss is 0.7 dB.     

Blue-light generation by frequency doubling of a laser diode in aperiodically domain-inverted LiTaO3 waveguide

The authors report quasi-phase matched second-harmonic generation by frequency doubling of a laser diode in LiTaO₃ having a first-order periodically domain-inverted region and proton-exchanged channel waveguide. A deep domain-inverted region and a low-loss channel waveguide with strong confinement are formed by using proton-exchange and quick heat treatment techniques. Utilizing this structure, a high normalized conversion efficiency of 157%/W is obtained with a Ti:Al₂O₃ laser. Using a temperature-controlled laser diode and AR coating on the input and output facet of the waveguide, the laser diode maintains single-mode oscillation without any mode hopping. Consequently, 1.1 mW of blue light is obtained at a wavelength of 436.5 nm     

Asymmetric output characteristics in 1.3-μm spot-size convertedlaser diodes

A spot-size converted laser diode (SSC-LD) with a vertically tapered passive waveguide structure was fabricated by butt-joint-built-in (BJB) coupling and selective area metal organic chemical vapor deposition growth. A high coupling efficiency exceeding 50% and 1-dB alignment tolerance of ±2.5 μm were obtained at a distance of 20 μm between a flat-end single-mode fiber and the SSC-LD. Experimental results show that the asymmetric output property can be described by the radiation mode added to the guide mode and spatial hole-burning in the active region     

Off-axis launching into a fibre-optical waveguide

The launching efficiency is calculated for the HE11 mode in an optical-fibre waveguide excited by an off-axis Gaussian laser beam. The dependence of the launching efficiency on small displacements of the fibre is discussed, and possible methods of easing the problem of positional alignment are suggested. Some recent experimental work is described.     

AlInGaAs/AlGaAs strained quantum-well ridge waveguide lasers grownby metalorganic chemical vapor deposition

AlInGaAs/AlGaAs strained quantum-well ridge waveguide diode lasers with an emission wavelength of 890 nm are presented. These devices exhibit both single spatial and longitudinal mode operation up to 30 mW of optical output power. A CW threshold current of 13 mA was obtained for a 5-μm-wide ridge waveguide having a cavity length of 500 μm. The differential quantum efficiency was 52%. The lateral and perpendicular far-field radiation patterns (FWHM) from the laser were 6° and 51°, respectively. Reliability testing on uncoated gain-guided lasers made from the same wafer showed no sudden death failures and degradation rates as low as 4.6%/kh     

980 nm渐变双波导激光二极管及其光电性能研究

为了提高980 nm激光二极管的光电性能,设计了Al组分内波导正向和外波导反向线性渐变的新型非对称双波导激光二极管。采用一维漂移扩散模型为理论基础,对新结构和传统结构进行了仿真模拟,并对比分析了两者的光电性能。光场分布表明,新结构通过改变波导折射率分布,减少了高阶模式数量,改善了基模的单模特性。能带排列表明,新型非对称双波导结构显著提高了电子和空穴泄漏的势垒,阻挡了载流子泄漏,增强了有源区的载流子限制能力,从而降低了有源区载流子浓度,提高了器件的内量子效率。与传统波导结构对比分析表明,新型非对称双波导结构激光二极管的阈值电流下降了27.65%,工作电压降低了15.24%。在注入电流为5 A时,输出功率达到5.36 W,电光转换效率达到78.06%。设计的新型波导结构提高了980 nm激光二极管的光电性能,对研发高性能激光二极管具有重要的理论指导意义。     

Computer model of a superluminescent LED with lateral confinement

We present a computer simulation of a strip-geometry superluminescent light emitting diode (SLD). One end of the strip waveguide has a finite reflectivity while the reflectivity vanishes at the other end because it is assumed that the strip waveguide terminates in a high-loss region. The gain of the structure is computed from the drive current and several intrinsic device parameters; gain saturation is taken into account. We discuss the dependence of the light power coupled into a fiber from an InGaAsP SLD at 1.3 μm as a function of the driving current, the reflectivity of one end of the strip waveguide, its numerical aperture (NA), and its length and width. A considerable improvement in power coupling efficiency can be realized when the waveguide NA equals the fiber NA or, in the absence of lateral confinement, when the fiber NA is much larger than the half-width to length ratio (times the refractive index) of the strip waveguide. Previous analyses have ignored lateral waveguiding effects.     

High-efficiency coupling of laser diodes in tapered proton-exchanged waveguides

Low-loss coupling between a laser diode and a tapered waveguide fabricated by selective area proton-exchange in LiNbO/sub 3/ is reported. The effectiveness of this waveguide is demonstrated by generating 12.3 mW of second harmonic blue light pulse by Cerenkov radiation.<>     

Hybrid integration of a laser diode and high-silica multimode optical channel waveguide on silicon

An InGaAsP laser diode with 1.34 ?m wavelength and a high-silica multimode optical waveguide were integrated on a common Si substrate using an alignment guide, which is formed simultaneously with the waveguide, for laser diode mounting. The laser-waveguide coupling efficiency was 30%.     

高功率980nm非对称宽波导半导体激光器设计

设计了980nm非对称宽波导InGaAs/InGaAsP量子阱激光器,并在结构中插入电流阻挡层,有效地阻止载流子的泄露。用LASTIP软件对980nm非对称宽波导量子阱激光器进行理论模拟,与传统的980nm对称宽波导量子阱激光器相比,非对称宽波导量子阱激光器波导和量子阱之间有更小的能带差,非对称宽波导结构具有更低的阈值电流,更高的斜效率以及更低的阻抗,所以带有电流阻挡层的980nm非对称宽波导InGaAs/InGaAsP量子阱激光器有更高的光电转换效率和输出功率。     

1.3μm波段单横模大功率输出量子点激光器

为了制备大功率、单横模输出的量子点激光器,对有源多模干涉波导结构进行了研究。通过优化器件结构设计,采用1×1型有源多模干涉波导结构,以均匀多层InAs/InGaAs/GaAs量子点材料作为有源区,制备了1.3μm波段的有源多模干涉结构量子点激光器。连续电流注入条件下的测试结果表明,与传统的均匀波导结构器件相比,有源多模干涉结构器件具有更低的串联电阻和更好的散热性能;在连续电流为0.5A的小注入情况下,器件的输出功率可达114mW、中心波长为1332nm。结果表明,有源多模干涉结构器件是制备大功率、单横模输出光发射器件的一种有效的器件结构。     

激光二极管端面抽运Tm:YAG激光器

研究了输出波长为2.018μm的激光二极管(LD)抽运Tm∶YAG激光器。通过准三能级系统的速率方程,分析了激光系统的抽运阈值和斜率效率。同时,利用ABCD矩阵分析了平凹腔和双凹腔的腔型稳定条件和模式匹配情况。实验时采用785 nm的光纤耦合半导体激光器为抽运源,当采用平凹直腔,Tm∶YAG晶体为5℃时,获得了4.04 W的连续激光输出,激光器斜率效率为35.4%,光-光转换效率为26.4%。实验比较了不同晶体温度下Tm∶YAG激光器的阈值、功率和效率。实验结果与理论分析基本吻合。此外,还研究了激光器腔型对激光输出功率和效率的影响。     

Dependence of Ti-diffused Er:LiNbO3 laser efficiency onwaveguide fabrication parameters and pump wavelength

The mode size, effective pump area, and coupling efficiency as function of initial Ti-stripe width W, diffusion temperature T, and initial Ti-stripe thickness H in c-cut Ti-diffused Er:LiNbO₃ waveguide laser have been studied theoretically, taking into account optical pumping λ_p=1.477 μm and 0.98 μm. The main features of the mode sizes in terms of these diffusion parameters were collected and, as compared with the experimental results, a qualitative agreement has been achieved. The effective pump areas exhibit both significant initial Ti-stripe width and diffusion temperature dependence, especially for W>9 μm and T>1050°C, whereas the initial Ti-stripe thickness can hardly give influence when pumping with λ_p=0.98 μm radiation. On the other hand, coupling efficiency is approximately unchanged with values 0.76-0.78 for λ_p=1.477 μm and 0.8-0.85 for λ _p=0.98 μm, indicating that there are no optimized values of these parameters to increase slope efficiency through coupling efficiency. Moreover, the 0.98 μm pumping reveal lower threshold and higher coupling efficiency than 1.477-μm pumping. Finally, the appropriate waveguide fabrication parameters were proposed for the fabrication of a more efficient laser     

Spatially singlemode broad-area semiconductor laser with planar external cavity

A broad-area laser diode combined with a planar external waveguide cavity operates in the fundamental mode and reshapes the output emission into a circular 15/spl deg/ beam. A 500 /spl mu/m-long by 40 /spl mu/m-wide laser diode with uncoated facets coupled with the uncoated ModeReShaper (MRS) planar chip has a coupling efficiency of /spl sim/40% and stabilised the fundamental mode at drive currents up to three-times threshold.     

Simulation of structural design with high coupling efficiency in external cavity semiconductor laser

For external cavity semiconductor lasers(ECSLs),high coupling efficiency is critical to reducing the linewidth.In this paper,the coupling efficiency between the laser diode and the waveguide grating has been improved,with proposals for its improvement presented,including adding spot-size conversion(SSC)and using a silicon-on-insulator(SOI)waveguide.The results indicate an increase of coupling efficiency from 41.5%to 93.1%,which exhibits an improvement of approximately 51.6%over conventional schemes.The relationship between coupling efficiency and SOI waveguide structures is mainly concerned in this article.These findings provide a new way for the future research of the narrow linewidth of ECSL.     

1.55-/spl mu/m spot-size converter integrated laser diode with conventional buried-heterostructure laser process

A 1.55-/spl mu/m spot-size converter integrated laser diode is demonstrated with conventional buried-heterostructure laser process. For the spot-size converter, we employed a double-waveguide structure in which a ridge-based passive waveguide was incorporated. The passive waveguide was optically combined with a laterally tapered active waveguide to control mode size. The threshold current was measured to be 5 mA together with high slope efficiency of 0.45 W/A. The beam divergence angles in the horizontal and vertical directions were as small as 9.0/spl deg/ and 7.8/spl deg/, respectively.     

1.3 μm multiquantum well decoupled confinement heterostructure(MQW-DCH) laser diodes

A 1.3-μm multi-quantum-well decoupled confinement heterostructure (MQW-DCH) laser diode has been developed. This structure introduces internal barriers between the active quantum wells and the optical waveguide. It is thus possible to have, at the same time, deep quantum wells to prevent carrier leakage and a strong optical waveguide with a high confinement factor. The barrier parameters have been optimized using numerical modeling tools, and the DCH laser diode has been built using chemical beam epitaxy. The broad-area transparency current density is 140 A-cm^-2, the internal efficiency is 0.83, the waveguide loss is 5 cm^-1. and T₀ = 62 K. Ridge waveguide laser diodes have a room temperature threshold of 8 mA and an efficiency of 0.32 mW/mA     

Slab-coupled 1.3-μm semiconductor laser with single-spatiallarge-diameter mode

A high brightness semiconductor diode laser structure, which utilizes a slab-coupled optical waveguide region to achieve several potentially important advances in performance, is proposed and experimentally demonstrated using a simple rib waveguide in an InGaAsP-InP quantum-well structure operating at 1.3-μm wavelength. These lasers operate in a large low-aspect-ratio lowest-order spatial mode, which can be butt coupled to a single-mode fiber with high coupling efficiency     

半导体激光器的光谱及参数测量

半导体激光器的输出光谱,反映了激光器本身的基本工作特性。本文从实验上研究了半导体激光器的输出光谱特性随偏置电流而变化的关系,并对其进行了理论分析。在此基础上,进一步测得了半导体激光器的热阻,增益峰值波长和纵模波长对载流子密度的相对变化率等基本参量。