快速响应SOI马赫曾德热光调制器

给出了Y分支MZI热光调制器的模型,实验研制了基于SOI(silicon-on-insulator)的MZI热光调制器,调制器的消光比为-16.5dB,开关的上升时间为10μs,下降时间为20μs,相应的功耗为0.39W.     

SOI热光调制器

设计和制作了多模干涉马赫曾德型热光调制器.通过合理选择SOI光波导的埋层和包层的厚度,使制作出的调制器有良好的综合性能.调制器调制深度为91%,功耗为0.35W,调制速度约为27μs.减小多模干涉耦合器的设计误差和提高刻蚀均匀性可以改善调制器的性能.     

基于悬浮波导的低功耗聚合物热光开关

设计制备了一种低功耗的马赫-曾德尔干涉仪(MZI)型聚合物热光开关器件,为降低开关的功耗,将器件加热区的调制臂波导设计成悬浮波导,从而抑制波导芯区处热量向硅衬底的扩散。模拟结果显示,相比于传统波导结构的热光开关,悬浮波导结构可以明显减少热扩散。利用半导体工艺成功制备了具有悬浮波导结构的热光开关器件,在1550 nm工作波长下,热光开关的功耗为9.3 mW,消光比为21 dB,开关的上升和下降时间分别为392μs和697μs。     

SOI热光调制器

设计和制作了多模干涉马赫曾德型热光调制器.通过合理选择SOI光波导的埋层和包层的厚度,使制作出的调制器有良好的综合性能.调制器调制深度为91% ,功耗为0 .35 W,调制速度约为2 7μs.减小多模干涉耦合器的设计误差和提高刻蚀均匀性可以改善调制器的性能     

低功耗聚合物MZI结构热光开关研究

设计并制作了一种基于马赫-曾德尔干涉仪(MZI)结构的低功耗聚合物热光开关。聚合物材料具有低热导率和高热光系数的优点,可以有效降低热光器件的功耗。在Si O2衬底上,采用热光系数较大的Norland紫外固化胶(NOA73)作为波导芯层,聚甲基丙烯酸甲酯和甲基丙烯酸环氧丙酯的共聚物[P(MMA-GMA)]作为波导的上包层,设计了热光开关器件,并对光场和热场进行了模拟,采用传统的半导体工艺完成了热光开关器件的制备。器件的测试结果表明,在1550 nm工作波长下,热光开关器件的消光比为20.2 d B,驱动功率仅为9.14 m W,开关的上升时间为174μs,下降时间为292μs。     

8×8重排无阻塞型SOI热光波导开关阵列

设计并制作了一种重排无阻塞型的8×8SOI热光波导开关阵列。开关单元采用了MMI—MZI结构的2×2光开关。整个器件的开关时间约为2μs。器件中开关单元功耗小于240mw。消光比在17-22dB范围内变化。功耗和开关速度都明显优于SiO2基和聚合物基的开关阵列。     

一种新型基于石英的热光型光开关

一种采用基于石英的平面光波回路技术（PLC）制造的热光型光开关正越来越引起关注，它具有低耦合损耗、高稳定性及适于大规模集成等优点。首先描述了采用热光相移器构成马赫-曾德于涉仪（MZI）结构的热光型光开关，然后讨论2×2MZI热光型开关的工作原理及基本特性，最后介绍了由2×2MZI热光型开关单元构成的大规模光开关阵列以及一种采用悬梁式结构热光相移器的低功率消耗的光开关。     

低功率消耗、响应快速的SOI基可变光学衰减器

采用绝缘体上Si(SOI)材料制作了马赫-曾德干涉型(MZI)SOI热光可变光学衰减器(VOA),利用隔热槽有效降低器件的功率消耗,提高响应速度。在1510～1610nm波长范围内动态调节范围可达到0～29dB。与未加隔热槽的相同结构光学衰减器相比,器件插入损耗和调制深度不受影响。最大衰减(29dB)时功率消耗由360mW降低为130mW,器件响应速度提高1倍,响应时间由大于100μs降为小于50μs。     

利用Mach-Zehnder干涉仪检测环形谐振腔传输曲线的方法

环形谐振腔已经广泛应用于激光器的反馈腔、光学硅基调制器、光开关以及温度、压力和转动传感器,并且显示了其在光延时和光存储方面的潜力.Mach-Zehnder干涉仪(MZI)因其体积小、结构简单、灵敏度高等特点,被广泛应用于光纤传感等领域.利用MZI结构,可以实现对光纤环形谐振腔的传输曲线的测量.通过传输线模型,建立了环形...     

利用FN振荡电流估计金属-氧化物-半导体场效应管Si-SiO_2界面宽度

利用聚合物材料研制出热光 Mach- Zehnder(MZ)型干涉调制器 ,单位相移为 1.5 3π/ (cm·℃ ) ,产生 π相移所需功率为 12 m W.热光开关的响应时间为 1.2 m s,消光比为 16 d B,接近实用水平 .并且讨论了热光相移在多种光电子器件中的应用     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks     

Call for Papers—Feature Topic,Vol.12,No.7,2015

正Information Centric Networking Information-Centric Networking(ICN) is an emerging direction in Future Internet architecture research,gaining significant tractions among academia and industry.Aiming to replace the conventional host-to-host communication model by a data-centric model,ICN treats data content as the first     

JOURNAL OF ELECTRONICS(CHINA)

正~~     

NEXT GENERATION WIRELESS NETWORKS–ESPECIALLY THE USE OF MILLI-MICROWAVE BANDS

The global bandwidth shortage of wireless communications has motivated the exploration of the naillimeter wave （ram-wave） frequency spectrum for the next generation wireless communications. Recent advances in RF CMOS technology and high speed baseband signal processing technologies have enabled tile extensive research and development of turn-wave wireless communications. The multi gigabit per second data rate of ram-wave system will lead to applications in many important scenarios, such as WPAN, WLAN,back-haul for cellular system. And the frequency bands include 28 GHz, 38 GHz, 45GHz, 60GHz, E-BAND and even beyond 100 GHz. The propagation and the imitation of the RF circuits design in these frequency bands make the directional antennas be inevitable for mm-wave communications.