Compact Patch Antenna Array for 60 GHz Millimeter-Wave Broadband Applications

Wireless Personal Communications - In this study, a wide-band compact patch antenna array is developed for 60 GHz band applications. The antenna array consists of eight identical elements....     

60GHz 毫米波在芯片无线互连中的传播特性研究

研究了60GHz 毫米波在芯片无线互连特定场景下的电磁传播问题。应用完整电磁理论,以单极阵子为研究对象在收发天线正对、非正对两种情形中,对径向分量在完整电磁波中的作用进行理论分析及数值仿真。数值仿真结果表明:当收发天线间距小于3 倍波长时,径向分量对完整电磁波有一定的贡献;当收发天线间距大于3 倍波长时,可应用传统远场分析进行近似处理。此外,在HFSS 中对特定的芯片间无线互连场景进行了建模及电磁仿真:当天线两端到PCB 介质板的距离约小于0. 7 ~ 0. 8mm 时,PCB 介质板对电磁波的反射会对天线造成一定的频偏,该频偏随着天线到PCB 介质板的距离的增大而减小;当天线两端到PCB 介质板的距离约大于0. 7 ~ 0. 8mm 时,基本不会造成频偏。这为60GHz 毫米波在芯片间无线互连中的应用提供了电磁传播的理论依据。     

Measurements of Human Body Attenuation and Dual Polarized Diversity Gain for 38 GHz Millimeter-Wave Channel

Wireless Personal Communications - Due to the increasing demand for higher bandwidth in modern communication systems, conventional networks are continuously expanded with new technologies to...     

A Millimeter-Wave (23–32 GHz) Wideband BiCMOS Low-Noise Amplifier

This paper presents a 23–32 GHz wideband BiCMOS low-noise amplifier (LNA). The LNA utilizes coupled-resonators to provide a wideband load. To our knowledge, the proposed LNA achieves the widest bandwidth with minimum power consumption using 0.18 $mu$m BiCMOS technology in K-band. Analytical expressions for the wideband input matching, gain, noise figure and linearity are presented. The LNA is implemented using 0.18 $mu$m BiCMOS technology and occupies an area of 0.25 mm$^2$ . It achieves a voltage gain of 12 dB, 3-dB bandwidth of 9 GHz, noise figure between 4.5–6.3 dB, linearity higher than ${-}$6.4 dBm with a power consumption of 13 mW from a 1.5 V supply.      

Inter-BSs virtual private network for privacy and security enhanced 60 GHz radio-over-fiber system

A novel inter-basestations (inter-BSs) based virtual private network (VPN) for the privacy and security enhanced 60 GHz radio-over-fiber (RoF) system using optical code-division multiplexing (OCDM) is proposed and demonstrated experimentally. By establishing inter-BSs VPN overlaying the network structure of a 60 GHz RoF system, the express and private paths for the communication of end-users under different BSs can be offered. In order to effectively establish the inter-BSs VPN, the OCDM encoding/decoding technology is employed in the RoF system. In each BS, a 58 GHz millimeter-wave (MMW) is used as the inter-BSs VPN channel, while a 60 GHz MMW is used as the common central station (CS)–BSs communication channel. The optical carriers used for the downlink, uplink and VPN link transmissions are all simultaneously generated in a lightwave-centralized CS, by utilizing four-wave mixing (FWM) effect in a semiconductor optical amplifier (SOA). The obtained results properly verify the feasibility of our proposed configuration of the inter-BSs VPN in the 60 GHz RoF system.     

Circularly Polarized SIW DRA Fed by Ridge Gap Waveguide for 60 GHz Communications

Wireless Personal Communications - A compact planar dielectric resonator antenna (DRA) is designed based on the substrate integrated waveguide (SIW) technology for 60 GHz communications....     

Short-Range Wireless Communications for Next-Generation Networks: UWB, 60 GHz Millimeter-Wave WPAN, And ZigBee

This article presents standardization, regulation, and development issues associated with short-range wireless technologies for next-generation personal area networks (PAN). Ultra-wideband (UWB) and 60 GHz millimeter-wave communication technologies promise unprecedented short-range broadband wireless communication and are the harbingers of multigigabit wireless networks. Despite the huge potential for PAN, standardization and global spectrum regulations challenge the success of UWB. On the other hand, ZigBeetrade is expected to be a crucial short-range technology for low throughput and ultra low-power consumption networks. The current status and direction of future development of UWB, emerging 60 GHz millimeter-wave PAN, and low data rate ZigBee are described. This article also addresses wireless MAC protocol issues of 60 GHz multigigabit PAN.     

基于双平行PM调制的60GHz光毫米波RoF系统研究

提出了一种采用相位调制器产生六倍频光载毫米波的RoF系统。该系统使用一个双平行相位调制器实现六倍频的调制,通过调节相位调制器的相位偏移量,产生出抑制一阶边带的光谱,耦合相减后得到三阶边带信号,在光电检测器中拍频,产生六倍于射频信号的光载毫米波。仿真结果表明,10GHz射频信号可以产生60GHz光载毫米波信号,5Gb/s的数据信号可在单模光纤中传输10km以上。     

Very low leakage InGaAs/InAlAs pHEMTs for broadband (300 MHz to 2 GHz) low-noise applications

This paper presents the design, fabrication and characterisation of InGaAs–InAlAs high electron mobility transistors (pHEMTs) suitable for low-frequency LNA designs. Very low levels of leakage, in the order of 0.05 A/cm², are demonstrated by the pHEMTs, which have enabled the implementation of large-geometry, low-noise devices. Transistors with gate widths ranging from 200 μm to 1.2 mm are demonstrated to operate up to frequencies of 30 GHz. These are extremely promising as LNA components for implementation in broadband low-frequency systems as the very low-noise resistance simplifies matching requirements. The levels of leakage observed in our transistors further support the potential of the InGaAs/InAlAs material system as an alternative to Si when the CMOS roadmap comes to an end.     

Tailoring of Electromagnetic Absorption in Substituted Hexaferrites from 8.2 GHz to 12.4 GHz

Journal of Electronic Materials - Microwave absorbers are an important topic of interest to mitigate electromagnetic interference. Here, we have investigated electromagnetic absorption properties...     

Measurements at 2.4, 3.4, 5.2, 28 and 60 GHz for Device-to-Device Wireless Communications

Wireless Personal Communications - Wireless communication networks with increased demand for higher speed in data transfer have paved way for device-to-device (D2D) wireless communications. This...     

Concurrent 60/94 GHz SIR Based Planar Antenna for 5G/MM-Wave Imaging Applications

The present research work aims towards the design of a stepped impedance resonator (SIR) based dual band antenna having resonant frequencies at millimeter wave: V band (center frequency: 60 GHz) and W band (center frequency: 94 GHz). The structure comprises of stepped impedance resonator (SIR) patch, two stepped section impedance matching network and a microstrip feedline. The fractional bandwidth of the proposed dual band antenna is 2.9 GHz (4.8%) and 6.25 GHz (6.6%) at 60 and 94 GHz, respectively. The far field polar plots show broadside radiation pattern having gain of 7.9 dBi at 60 GHz and 4.2 dBi at 94 GHz. Further, as a testimony of this concept, scaling principle was used and accordingly microwave scaled antenna was devised. The prototype scaled hardware results matched closely with the designed mm-wave antenna. Further, the proposed dual frequency antenna finds enormous applications towards development of pioneering millimeter wave systems like; 60 GHz is focused on multi gigabit WPAN communication and 94 GHz frequency is currently extensively used for millimeter wave imaging applications. The proposed design is very simple, conformal and easily extendable as an array for MMIC applications for compact frontend design.

     

Transmission of Multiple HD-TV Signals Over a Wired/Wireless Line Millimeter-Wave Link With 60 GHz

For the first time to our knowledge, we demonstrate a transmission of 37 channels a 64 quadratic-amplitude-modulation (QAM)-coded high-definition television (HD-TV) signal over a fiber-optic millimeter-wave link. The 60-GHz upconverter/downconverter is implemented based on a Gunn oscillator and a nonradiative dielectric waveguide. For the remote delivery of 37 channels of HD-TV signal through 20 km of single-mode fiber, we use a laser diode operating at 1554 nm and an electroabsorption modulator. We evaluate the performances of HD-TV by measuring error vector magnitude and confirm transmission qualities by observing video contents coded with moving picture expert group-2 (MPEG-2).     

用于77GHz毫米波雷达的模拟基带电路设计

实现了一个带宽和增益可配置、高线性度、低噪声的模拟基带电路,可应用于77 GHzCMOS毫米波雷达接收机.电路包括一个带宽可配置的5阶巴特沃斯低通滤波器模块、三个可编程增益放大器模块以及三个直流失调消除环路.增益范围为18～70 dB,增益步进为6 dB;带宽为200 kHz～2 MHz;噪声系数最小为24 dB;输出1-dB压缩点为5.1 dBm,在最高增益时,IIP3为-52dBm;功耗为14.6 mA@1 V.电路采用65 nm CMOS工艺实现,芯片面积为1.2×0.93 (mm2).     

A 340–380 GHz Integrated CB-CPW-to-Waveguide Transition for Sub Millimeter-Wave MMIC Packaging

In this letter, a rectangular waveguide to conductor backed-coplanar waveguide electromagnetic transition suitable of operating at sub-millimeter wave frequencies is demonstrated. The dipole based transition is fabricated using InP monolithic microwave integrated circuit technology. The compact transition eliminates wire-bonding problems (return loss and insertion loss) and is suitable for direct integration of sub-millimeter wave monolithic integrated circuits. Measured transition loss of $sim$ 1 dB has been achieved in the frequency range of 340 to 380 GHz.      

Compact Bioinspired Antenna for WLAN 5 GHz Application

Wireless Personal Communications - This paper presents the development of a compact monopole antenna bioinspired in the Opuntia ficus-indica plant-shape, generated by Gielis formula, built in...     

Propagation Loss Measurement of Wireless Body Area Network at 2.4 GHz and 3.35 GHz Bands

The main purpose of this work is to measure and analyze the propagation loss of the Wireless Body Area Network (WBAN) in frequency and time domain at two frequency bands, namely 2.4 GHz band with 80 MHz bandwidth and 3.35 GHz band with 500 MHz bandwidth. Four different scenarios (front to front, front to back, front to off-body node and back to off-body node) using many antenna´s locations on the body are used to investigate the channel response (path loss) of WBAN. It is found that the front to front channels and the front to off-body node channels have a low fading. The front to back channels and the back to off-body node channels have a high fading that can be approximated by the Distorted Rayleigh fading. Thus the WBAN range for the front to off-body node scenario is more than the range of the back to off-body node scenario.

     

SBT (Sense Before Transmit) Based LTE Licenced Assisted Access for 5 GHz Unlicensed Spectrum

Utilization of unlicensed spectrum under licensed assisted access ensuring fair co-existence with Wi-Fi networks is a good solution to address immense usage of mobile data. Radio communication operation of LTE in unlicensed frequency band is referred as LTE-unlicensed (LTE-U) or LTE-licensed assisted access. In this paper, we consider a HGNW in which coverage area of Wireless-Fidelity (Wi-Fi)’s Access Point is integrated within the LTE-U small base station’s cellular network coverage area. To overcome the disadvantages of existing LTE-U technics like carrier sense adaptive transmission and listen before talk, we proposed a new methodology i.e., sense before transmit in this paper by adopting a transmit power control mechanisms using reciprocity theorem based on the channel state information to assign the secondary carriers in the uplink as well as in the downlink directions in the unlicensed spectrum to carry the traffic. In our proposal, LTE-U users are allowed to use the unlicensed spectrum provided that the interference produced at Wi-Fi users due to LTE-U activities is remained below a certain threshold. We evaluated the performance of proposed network model in terms of outage probability and achievable throughputs.

     

IEEE 802.11 aj （45GHz）： A New Very High Throughput Millimeter-Wave WLAN System

This paper presents an overview of a new very high throughput millimeter- wave WLAN system operating at 45 GHz band. We begin by reviewing standards process of IEEE 802.11aj （45GHz）. Then the frequency spectrum allocation at 45 GHz band is introduced. Next, the channel measurement and mod-eling is given. Specifically, the millimeter-wave MIMO for physical layer enhancement is given in detail.     

Highly ordered C60 films on epitaxial Fe/MgO(0 0 1) surfaces for organic spintronics

Hybrid interfaces between ferromagnetic surfaces and carbon-based molecules play an important role in organic spintronics. The fabrication of devices with well defined interfaces remains challenging, however, hampering microscopic understanding of their operation mechanisms. We have studied the crystallinity and molecular ordering of C₆₀ films on epitaxial Fe/MgO(0 0 1) surfaces, using X-ray diffraction and scanning tunneling microscopy (STM). Both techniques confirm that fcc molecular C₆₀ films with a (1 1 1)-texture can be fabricated on epitaxial bcc-Fe(0 0 1) surfaces at elevated growth temperatures (100–130 °C). STM measurements show that C₆₀ monolayers deposited at 130 °C are highly ordered, exhibiting quasi-hexagonal arrangements on the Fe(0 0 1) surface oriented along the [1 0 0] and [0 1 0] directions. The mismatch between the surface lattice of the monolayer and the bulk fcc C₆₀ lattice prevents epitaxial overgrowth of multilayers.