Y2O3、Ga2O3和B2O3共掺杂对ZnO压敏电阻微观结构和电气性能的影响

稀土元素的掺杂能显著提高ZnO压敏电阻的电压梯度(E_1mA),但却会导致泄漏电流的增加,从而致使ZnO压敏电阻的老化稳定性降低。为了解决稀土元素掺杂导致泄漏电流增加的问题,研究了Y₂O₃、Ga₂O₃和B₂O₃共掺杂对ZnO压敏电阻微观结构和电气性能的影响。掺杂的Y₂O₃通过钉扎效应能够显著抑制ZnO晶粒的生长提高样品的E_1mA。Ga₂O₃的掺杂则有助于提高晶界层的势垒高度(φ_b)、抑制泄漏电流密度(J_L)的增加。而B₂O₃的掺杂则有助于改善样品的液相烧结,避免具有高电阻率Y尖晶石相聚集现象的发生,传输通道的阻断有利于降低样品的J_L。此外,B₂O₃的掺杂能够促进ZnO晶粒与其他...     

ZnO压敏电阻微观结构参数与宏观电气性能的关联机制

ZnO压敏电阻是金属氧化物避雷器的核心部件,在抑制电力系统过电压方面发挥了重要的作用。随着特高压输电技术的发展,对ZnO压敏电阻的残压、通流容量等电气特性提出了更高的要求。该文从材料计算的角度出发,以基于Voronoi模型的ZnO压敏电阻优化计算模型为基础,计算研究了晶粒尺寸、尺寸不均匀度、晶粒电阻率等微观结构参数与多种宏观电气性能之间的关联机制,将多变量、多目标的最优化问题,极大地简化为仅包含三类优化变量、两类优化目标的最优化问题,并制定出具有针对性的优化策略和步骤,为ZnO压敏电阻性能的改进提供了重要理论依据,对高性能避雷器的设计制造具有重要意义。     

Y2O3掺杂ZnO-Bi2O3压敏瓷的显微组织和电性能

为了提高氧化锌压敏瓷的综合电性能,采用高能球磨制备Y2O3掺杂ZnO压敏瓷,通过扫描电镜和X射线衍射对其显微组织和相成分进行了分析,探讨了Y2O3对氧化锌压敏瓷电性能和显微组织影响机理。结果表明,Y2O3掺杂摩尔分数在0～1.00%时,压敏瓷的电位梯度为332～597V/mm,非线性系数为23.6～40.1,漏电流为0.06～0.90μA。当Y2O3掺杂摩尔分数为0.60%时氧化锌压敏瓷的综合电性能最好,压敏瓷电位梯度为482V/mm,非线性系数为35,漏电流为0.17μA。掺杂Y2O3使压敏瓷晶粒细化是由于Y2O3或者单独以Y2O3氧化物形式存在,钉扎在晶界,阻碍晶粒长大;或者与Bi2O3固溶形成含Y的富铋相,使Bi2O3促进晶粒生长的作用受到抑制。     

烧结温度对低压ZBCMTV压敏电阻性能的影响

采用固相反应法制备了低压ZnO-Bi2O3-Co2O3-MnCO3-TiO2-V2O5(ZBCMTV)压敏电阻,借助扫描电子显微镜、压敏电阻直流参数仪、阻抗分析仪等研究了烧结温度对压敏电阻的微结构、压敏性能和介电性能等的影响。结果表明,在较低烧结温度(980℃)下,ZBCMTV压敏电阻综合性能最好;晶粒发育比较完全,粒径大小较均一,平均粒径约13.9μm;压敏电压梯度为109.7 V/mm,漏电流密度最小为0.015μA/mm2,非线性系数最大为27.8。     

考虑微观特性的ZnO压敏电阻计算模拟模型

电力设备的绝缘水平建立在避雷器的过电压保护水平基础之上。ZnO压敏电阻具有优良的非线性电压-电流特性和浪涌能量吸收能力,被广泛用作电力系统避雷器的核心元件。ZnO压敏电阻的电气特性由其复杂的微结构和晶界特性决定。该文以Voronoi网络模型为基础,建立ZnO压敏电阻的微观结构模型。采用考虑晶间旁路效应的晶界分区模型,建立求解氧化锌压敏电阻宏观电气性能的大规模非线性电阻网络方程。针对难以采用常规牛顿迭代方法求解的问题,提出基于分段线性化和差分重构的快速求解优化算法,计算结果误差指标在10-3数量级以下。采用模型计算得到了尖晶石含量、晶粒尺寸不均匀度以及气孔率等微观结构参数对ZnO压敏电阻宏观电气性能的影响规律。     

ZnO压敏电阻在8/20μs脉冲电流作用下的动态伏安特性分析

测量及分析了ZnO压敏电阻在8/20μs脉冲电流作用下的动态伏安特性。ZnO压敏电阻的动态伏安特性曲线显示,电流上升曲线与电流下降曲线不重合,电流上升过程对应的电压高于电流下降过程对应的电压。分析认为,这种现象与ZnO压敏电阻在脉冲电压作用下的转移特性有关,并应用空穴诱导隧道击穿理论解释了这一现象产生的机制。     

B2O3掺杂对直流ZnO压敏电阻老化特性的影响

ZnO压敏电阻是避雷器的核心部件,其性能的好坏直接影响着避雷器的电气性能。因此,该文致力于通过B₂O₃的掺杂以改善直流ZnO压敏电阻的非线性和高荷电率下的老化稳定性,并利用扫描电子显微镜（SEM）、X射线衍射（XRD）和电容-电压（C-V）等特性测试研究B₂O₃掺杂对直流ZnO压敏电阻的微观结构和电气特性的影响。然后,在115℃、0.95E_1mA的条件下对直流ZnO压敏电阻进行1000h的直流加速老化试验,以验证其在高荷电率下的老化稳定性。试验结果表明,B₂O₃的掺杂提高了晶界层的势垒高度,改善了直流ZnO压敏电阻的非线性特性,并降低了其在高荷电率下的老化系数。     

Y2O3掺杂对钛酸锶钡陶瓷材料介电-温度及电阻率-温度特性的影响

钛酸钡基电介质陶瓷因具有良好的介电和正温度系数特性已被广泛应用于科技、工业以及日常生活中,在新兴领域的需求下,开发具有低居里温度和高常温电阻率特性的电介质陶瓷材料具有重要意义。因此,采用固相法制备了不同掺杂浓度氧化钇(Y₂O₃)的钛酸锶钡(Ba_0.7Sr_0.3TiO₃,BST),正温度系数(positive temperature coefficient,PTC)陶瓷材料,通过X射线衍射和扫描电镜测试了试样的理化特性,利用宽频介电谱仪和电阻率–温度测量系统分别获得了试样的介电–温度特性和电阻率–温度特性,并构建了四象限模型分析钇(Y)对材料介电–温度特性和电阻率–温度特性的影响机理。研究表明：随Y₂O₃含量的增大,介电常数和居里温度均呈先增大后减小的趋势,而常温电阻率呈现相反的变化趋势。0.0008 mol的Y₂O₃掺杂可大幅提高BST材料相对介电常数(>10⁵)...     

不同类型冲击电流对ZnO压敏电阻老化的影响研究

为了比较不同类型冲击电流对氧化锌（ZnO）压敏电阻直流老化的影响,将相同类型的ZnO压敏电阻样品分别开展2 ms方波（峰值为2 kA）耐受试验和4/10μs冲击电流（峰值为100 kA）试验。实验结果表明,在1～3轮（3～9次）的冲击耐受下,2 ms方波对ZnO压敏电阻的老化特性能起到一定优化作用,而4/10μs大电流冲击则使得ZnO压敏电阻老化特性持续劣化。利用扫描电子显微镜（SEM）、光谱仪、数字源表研究其微观结构以及电气性能参数变化。结合实验结果分析原因,4/10μs冲击电流对ZnO压敏电阻的损伤程度大于2 ms方波冲击电流的损伤程度,更容易引起ZnO压敏电阻的老化,在1～3轮（3～9次）2 ms方波耐受下,可以改善压敏电阻老化特性,其原因在于冲击电流产生热效应使构成晶界势垒亚稳定成分填隙锌离子在晶界发生反应而降低其浓度,得到比冲击前更稳定的晶界结,从而提高了其老化特性。     

Li2O·Al2O3·SiO2复相陶瓷的研制

以石英砂、氧化铝为主要原料,聚乙烯醇(PVA)为粘结剂,掺杂Li2CO3制备了锂辉石陶瓷。通过TG-DSC、XRD、SEM研究了样品的烧结制度、物相组成和显微结构,并测定了样品的体积密度和力学性能。结果表明:Li2CO3含量为10%时,在1 150℃烧结温度下,锂辉石固溶体的晶相含量高,主晶相为Li2O.Al2O.34SiO2,体积密度为2.18 g/cm3,抗压强度为586 MPa,其结构均匀致密且力学性能最优。     

ZnO压敏电阻片的应用研究进展

本文针对1000kV交流系统和±800kV直流系统中各种避雷器对安全可靠性、重量轻、体积小型化的要求,总结了国内外竞相开展的提高ZnO压敏电阻片电位梯度和能量吸收能力的研究开发工作。综述分析了国内外用于交直流系统避雷器的高电位梯度、大能量吸收能力的新型ZnO压敏电阻片的研究开发和应用进展,总结了提高ZnO压敏电阻片电位梯度(达4.0kV/cm)和能量吸收能力(达300J/cm3)的主要途径。     

Sintering and dielectric properties of Al2O3 ceramics doped by TiO2 and CuO

The effects of CuO and TiO₂ additives on the microstructure and microwave dielectric properties of Al₂O₃ ceramics were investigated. Al₂O₃ ceramics with CuO and TiO₂ additions can be well sintered to achieve 93∼98% theoretical densities below 1,360 °C due to Ti₄Cu₂O liquid phase sintering effect. The Qf values decreased with increasing CuO and TiO₂ content, due to the formation of the second phase Ti₄Cu₂O. However, the varying behaviors of the dielectric constant (ɛ _r ) and temperature coefficients (τ _f ) were associated with phase constitutions, as a result of the change of CuO and TiO₂content. The τ _f can be shifted close to 0 ppm/°C by controlling the content of CuO and TiO₂. The specimens with 0.5 wt.% CuO and 7 wt.% TiO₂ sintered at 1,360 °C for 4 h showed ɛ _r of 11.8, Qf value of 30,000 GHz, and τ _f of −7 ppm/°C.     

The Electrical and Defect Properties of Bi3Zn2Sb3O14 Pyrochlore: A Grain-Boundary Phase in ZnO-Based Varistors

The electrical conductivity of Bi₃Zn₂Sb₃O₁₄ pyrochlore was studied as a function of temperature and partial pressure of oxygen. Conductivity measurements by ac complex impedance analysis and ionic transference number measurements show this pyrochlore to be a mixed ionic-electronic conductor with an energy band gap of 3.15 ± 0.9 eV. A defect model in which Frenkel defects on the oxygen lattice are dominant is confirmed. Enthalpies of reduction, oxidation and the sum of oxygen vacancy formation and migration were found to be 4.82 ± 0.8 eV, 1.48 ± 1.0 eV and 1.67 ± 1.0 eV respectively.     

High Temperature Characterization of Electrical Barriers in ZnO Varistors*

Two main models have been proposed to describe the potential barriers in ZnO varistors: the surface oxidation and the surface states. It has been difficult to decide which of them better corresponds to the experimental observations. High temperature electrical characterization of these materials is an important tool to understand the formation of the electrical barriers. In this work, using literature data describing ZnO varistor characteristics at high temperature, up to 1153°C, we calculate the energy position of the equilibrium Fermi level at the grain boundary interface, and found that this parameter decreases with the increase of temperature, and for temperatures higher than 700°C it stays close to the ZnO band gap without crossing it. This behavior shows that the interface never presents a p-type character, a starting point to develop the surface states model. On the other hand, 700°C is a temperature too low for the surface oxidation mechanism to be operative. It is then proposed that, during cooling down to 700°C, the interface Fermi level stays close to the middle of the band gap due to the adsorption and subsequent reaction of oxygen with ZnO surfaces/grain boundaries. For lower temperatures, when the interface Fermi level separates from the middle of the band gap, it is proposed that it follows the variation of the bulk Fermi level, which in turn is caused by shallow donors in ZnO. A calculation assuming a reduced electroneutrality condition, gave a donor density of 3 × 10¹⁷ cm^-3, which corresponds approximately to the density of carriers in the material for temperatures down to room temperature. This value is in a good agreement with those available in the literature. Knowing both the bulk and the interface Fermi levels, it is then possible to calculate the barrier height at any temperature, and it is observed that it is almost constant from room temperature up to 400°C, with a value of 0.8 eV, and than decreases monotonously up to 1153°C. Taking these values, it is possible to calculate the variation of the low voltage conductivity with temperature, and it is found that, apart from the variation between room temperature and 400°C, with no special significance, the decrease of the barrier height from 400°–1153°C induces an extra change of the conductivity from which a fictitious activation energy of 1.5 eV is obtained. Therefore, these two energies are not related to shallow and deep donors in ZnO grains.     

(V2O5,Ta2O5)双掺杂的WO3陶瓷的电学行为研究

用电子陶瓷工艺制备(V2O5,Ta2O5)双掺杂的WO3电子陶瓷,研究了(V2O5,Ta2O5)双掺杂对WO3陶瓷的微观结构与电学行为的影响。X射线衍射结果表明,(V2O5,Ta2O5)双掺杂能明显抑制WO3中三斜相的形成,使WO3陶瓷单相化。I-V特性测试表明,掺杂V2O5和Ta2O5后,陶瓷的压敏电压明显增大,非线性系数显著减小。     

The Role of Oxygen Vacancies on the Microstructure Development and on the Electrical Properties of SnO<Subscript>2</Subscript>-Based Varistors

Variations on the microstructure development and on the electrical properties of SnO₂-based varistors are discussed on the basis of the oxygen vacancies created or annihilated by the presence of different additives. Electron paramagnetic resonance (EPR) analysis of sintered samples evidenced a substantial increase in the paramagnetic oxygen vacancies concentration when Nb₂O₅ is added to the SnO₂ Co₃O₄ system. On the other hand, the observed diminution in the concentration of such species after the addition of Fe₂O₃ indicates solid solution formation. The quantification of paramagnetic oxygen vacancies allowed to confirm the proposed substitutions taking place in the lattice during sintering. These findings are supported by scanning electron microscopy, by density measurements and by current density versus electric field curves. The characterization of secondary phases through EDS assisted SEM and TEM is also reported in this work.     

烧结温度对Li0.35Zn0.3Fe2.35O4铁氧体微结构和磁性能的影响

用氧化物法制备了Li0.35Zn0.3Fe2.35O4铁氧体材料,研究了烧结温度对材料微结构和磁性能的影响.结果表明,烧结温度越高,晶粒越大,矫顽力Hc越小.适宜的烧结温度可以提高密度db、饱和磁化强度Ms和降低铁磁共振线宽△H.在烧结温度为1160℃时,可以制备出高Ms、高Br/Bs,低Hc及低△H的LiZn铁氧体材料.