高效微带线聚合物电光调制器的研制

设计、制作并测试了1.55 m 光波长的微带线行波电极电光调制器。如果聚合物材料的电光系数33=30 pm/V,中心电极L 为20 mm,设计的调制器性能参数半波电压为6.70 V。用自主合成的发色团分子组成二阶非线性光学聚合物材料做为芯层制作的聚合物调制器,对调制器的各项性能参数进行了直流、低频和微波性能的测试,采用不同极化方法,在1.55 m 波长上测得低频半波电压分别为10.5 V(电晕极化)和4.9 V(接触极化),折算得芯层材料的电光系数分别为21 pm/V 和45 pm/V。测得消光比为24 dB。用矢量网络分析仪测试电极系统的微波性能,S 参数反映了此电极系统具有低的微波传输损耗和反射损耗。     

用于微波光子系统的铌酸锂集成电光调制器研究

设计和制作了一种高速铌酸锂电光调制器。波导采用双Y定向耦合器型结构以提高线性度,同时能够提高工艺容差;电极采用CPW行波电极结构。通过分析比较不同相速匹配程度及微波损耗程度对电极系统带宽的影响,选择合适的设计参数及工艺参数,制作的调制器样品插入损耗为3dB,开关消光比为34dB,偏置电极半波电压为7V,行波电极半波电压为5.5V,电反射小于-10dB,6dB调制带宽约18GHz,可实现0～18GHz模拟调制。     

聚合物偶极子天线型光纤电场传感器

设计并初步成功制作了聚合物光纤电场传感器.假设聚合物材料的电光系数r13=10 pm/V,设计的两种电场传感器的半波电场Eπ=36.2和15.8 kV/m.用自制的二阶非线性光学聚合物BPAN-NT作为聚合物光纤电场传感器的芯层材料,制作了电光调制器.用反应离子刻蚀的方法制作脊形光波导,通过电晕极化使芯层具有电光效应,...     

GaAs三波导耦合Mach—Zehnder干涉型强度调制器

本文报道了一种GaAs n~-/n~+脊型M-Z波导调制器,这种调制器用三波导耦合器作为分束器和干涉器。运用GaAs的电光特性,在λ=1.15μm下测量,得到半波电压14V,调制深度大于95％,3dB带宽大于1GHz的调制特性。     

160GHz带宽LiNbO3电光调制器微波损耗的限制

本文通过模拟LiNbO3电光调制器的电传输特性,提出了厚电极共面波导（CPW）行波电极微波损耗的经验公式,在此基础上研究了带宽为160GHz的调制器的微波损耗因素。结果表明,辐射损耗将占重要地位,而且小的电极尺寸更易实现宽带调制。     

基于SU-8材料的无源-有源集成式电光开关设计与制备

对基于SU-8紫外负性光刻胶的无源-有源集成 式电光开关进行了系统的研究。 首先用物理掺杂的方法制备出价格 低廉、性能良好的主客掺杂型电光材料DR1/SU-8,反射法测量其电光系数约为11. 5pm/V@1310nm。为减小器件的插入损耗, 设计了有源芯层为DR1/SU-8、无源芯层为SU-8的倒脊形混合集成式波导结构。制作完 CPW行波电极后,对器件进行接 触极化。实验测得开关的上升时间和下降时间分别为5.6μs和5.2μs,插入损耗为13.8dB,与只用DR1/SU-8作为波导芯层的 器件相比,插入损耗减小了约2.8dB。实验结果表明,这种无源-有 源集成式电光波导有效地减小了器件的插入损耗,为制备 低损耗的电光器件和单片多功能集成器件奠定了一定的基础。     

LiNbO_3薄膜光波导及其应用(一)

本文对集成光学中制作平面光波导用的LiNbO_3薄膜制备及其光参数的测量方法进行了介绍。RF二极管溅射沉积的LiNbO_3单晶薄膜的寻常光及非寻常光折射率高达:n_0=2.32±0.02;n_e=2.18±0.04(He-Ne激光)。用LiNbO_3膜可制作出光传输损耗不超过1dB/cm(He-Ne激光)的薄膜光波导。用外扩散LiNbO_3平面光波导可制作出高效率、宽带的电光相位调制器。其调制率η与电压之比为0.13V~(-1),50Ω负载时最大带宽为3.2GHz。η=1rad时,每单位带宽的调制功率为0.19mW/MHz。另外,用内扩散工艺制作的Ti:LiNbO_3光波导可制作出集成声光调制器。与块体型声光双稳态器件相比,其体积尺寸以及功耗要小得多。最后,对迄今为止获得的研究结果进行了简要的讨论分析。     

全封装的薄膜铌酸锂电光调制器（特邀）

高速电光调制器是宽带光通信网络和微波光子系统中的关键元器件之一。相对于体材料铌酸锂而言,薄膜铌酸锂材料由于其较强的光场限制能力,在构建小尺寸、宽带、低半波电压的高性能电光调制芯片上有独特的优势。文章基于薄膜铌酸锂材料研制了一种3 dB带宽不低于50 GHz的电光调制芯片,并采用光纤与波导水平端面耦合的光学封装方案和基于1.85 mm同轴接头的射频封装方案,实现了全封装的薄膜铌酸锂电光调制器。测量结果表明,封装后器件的光学插入损耗小于等于5 dB,3 dB带宽大于等于40 GHz,射频半波电压小于等于3 V@1 GHz。     

电光双向强度调制器的隔离度研究

设计和制作了应用于微波全双工收发系统的马赫-曾德尔型电光双向强度调制器。根据电光调制器中电信号对光信号的调制叠加原理,通过计算和仿真,分析了因调制电极设计电场与实际电场分布差异导致的器件隔离度劣化。通过对比不同调制电极结构的分析设计和仿真优化结果,得到3.5GHz以上频段隔离度优于-30dB的电光双向强度调制器设计结构。制备出的电光双向强度调制器在5~17GHz范围内隔离度优于-30dB。     

基于光子晶体纳米梁腔的反射壁下载型电光调制器

随着光通信产业和光互联技术的高速发展，具有高调制速率且易集成的小尺寸电光调制器件研究越来越重要。提出了一种以硅绝缘体(SOI)材料为基底的光子晶体纳米梁腔(PCNC)反射壁下载型电光调制器。信号光经过主线波导后首先被锥形波导耦合进一维光子晶体纳米梁腔中，然后进入下载波导并输出。优化主线波导与下载波导中反射圆孔的位置与个数，可以提高器件的整体透射率。纳米梁腔采用圆孔形渐变孔径，使得光束更好地被束缚在腔内。同时，在纳米梁腔两侧引入掺杂以形成PN结，施加较低偏压以改变纳米梁腔的谐振波长，从而实现工作波长光信号的“通”“断”调制。运用三维时域有限差分(3D-FDTD)法对调制器的光学特性和电学性能进行仿真分析。结果表明，该电光调制器可以实现波长为1550.01 nm的光信号调制，调制电压仅为1.2 V，插入损耗为0.2 dB，消光比为24 dB，面积仅为54μm²，调制速率为8.7 GHz，调制带宽为122 GHz，调制速率下的能耗仅为4.17 pJ/bit。所提出的电光调制器结构紧凑，性能优异，有望应用于高速大容量光通信系统和集成硅光子技术等领域。     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks     

Call for Papers—Feature Topic,Vol.12,No.7,2015

正Information Centric Networking Information-Centric Networking(ICN) is an emerging direction in Future Internet architecture research,gaining significant tractions among academia and industry.Aiming to replace the conventional host-to-host communication model by a data-centric model,ICN treats data content as the first     

JOURNAL OF ELECTRONICS(CHINA)

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NEXT GENERATION WIRELESS NETWORKS–ESPECIALLY THE USE OF MILLI-MICROWAVE BANDS

The global bandwidth shortage of wireless communications has motivated the exploration of the naillimeter wave （ram-wave） frequency spectrum for the next generation wireless communications. Recent advances in RF CMOS technology and high speed baseband signal processing technologies have enabled tile extensive research and development of turn-wave wireless communications. The multi gigabit per second data rate of ram-wave system will lead to applications in many important scenarios, such as WPAN, WLAN,back-haul for cellular system. And the frequency bands include 28 GHz, 38 GHz, 45GHz, 60GHz, E-BAND and even beyond 100 GHz. The propagation and the imitation of the RF circuits design in these frequency bands make the directional antennas be inevitable for mm-wave communications.