Germanium-diffused waveguides in silicon for λ=1.3 μm andλ=1.55 μm with losses below 0.5 dB/cm

The authors present a simple technique for the fabrication of integrated optical channel waveguides that are prepared by indiffusion of an E-beam evaporated amorphous alloy of germanium and silicon into commercially available silicon with low dopant concentration, using only simple technological processes such as standard lithography, PVD, and diffusion. The waveguides are polarization independent and have waveguide losses as low as 0.3 dB/cm at wavelengths of λ=1.3 μm and λ=1.55 μm. The spot sizes are well suited for low-loss single-mode fiber device coupling, being on the order of a few microns in both horizontal and vertical directions     

Deep sea trial of 1.55 μm optical fibre submarine cable system

The first 6000 m deep sea trial of a 1.55 μm optical fibre submarine cable system was successfully conducted in the Pacific Ocean, near Torishima Island, in January 1988. By using 1.55 μm loss-minimised single-mode fibre cables and submerged fully monolithic Si-IC regenerators with DFB lasers, excellent transmission performances at 140, 280 and 565 Mbit/s were obtained through 150 km repeater spacings, respectively     

A three-dimensional optical photonic crystal

We report on the successful fabrication of a working three-dimensional (3D) crystal operating at optical wavelength λ. The minimum feature size of the 3D structure is 180 nm. The 3D crystal is free from defects over the entire 6-inch silicon wafer and has an absolute photonic bandgap (PBG) centered at λ~1.6 μm. Our data provides the first conclusive evidence for the existence of a complete 3D PBG in optical λ. This development will pave the way to tinier, cheaper, more effective waveguides, optical switches and lasers     

Intersubband transitions at 1.3 and 1.55 μm in a novel coupledInGaAs-AlAsSb double-quantum-well structure

We report the first observation of intersubband absorption at 1.3 μm in a coupled InGaAs-AlAsSb double-quantum-well structure lattice matched to InP substrate. The novel structure exhibits intersubband transitions concurrently at 1.3 and 1.55 μm due to the strong coupling of the intersubband states of the adjacent wells. A transient analysis of optical response in the multilevel conduction subband states for the designed structure indicates ultrafast optical switching behavior with a subpicosecond response     

Room temperature photonic crystal defect lasers at near-infraredwavelengths in InGaAsP

Room temperature lasing from optically pumped single defects in a two-dimensional (2-D) photonic bandgap (PBG) crystal is demonstrated. The high-Q optical microcavities are formed by etching a triangular array of air holes into a half-wavelength thick multiquantum-well waveguide. Defects in the 2-D photonic crystal are used to support highly localized optical modes with volumes ranging from 2 to 3 (λ/2n)³. Lithographic tuning of the air hole radius and the lattice spacing are used to match the cavity wavelength to the quantum-well gain peak, as well as to increase the cavity Q. The defect lasers were pumped with 10-30 ns pulses of 0.4-1% duty cycle. The threshold pump power was 1.5 mW (≈500 μW absorbed)     

A wide-bandwidth low-noise InGaAsP-InAlAs superlattice avalanchephotodiode with a flip-chip structure for wavelengths of 1.3 and 1.55μm

The authors reports the fabrication of a flip-chip InGaAsP-InAlAs superlattice avalanche photodiode using gas source molecular beam epitaxy. The incident light reaches the InGaAs photoabsorption layer through the InP substrate and an InGaAsP-InAlAs superlattice multiplication region which are transparent for wavelengths of 1.55 and 1.3 μm. The light reflection by the electrode enables the absorption layer to be as thin as 0.8 μm without significantly reducing the quantum efficiency. A maximum bandwidth of 17 GHz was obtained at a low multiplication factor because the transit time through the absorption layer is reduced     

High resolution OCDR using 1.55 μm supercontinuum source andquadrature spectral detection

A supercontinuum source is used with a static Michelson interferometer to perform high-resolution optical coherence-domain reflectometry (OCDR) at 1.55 μm. Quadrature spectral detection enables compensation for both the undesirable spectral shape of the source and for the dispersion in the system. A resolution of less than 5 μm in fibre (full width at half maximum) at 1.55 μm is obtained     

High-performance 1.6 μm single-epitaxy top-emitting VCSEL

The first single-epitaxy top-emitting vertical-cavity surface-emitting laser emitting in the 1.55-1.61 μm wavelength region is reported. CW operation is achieved up to 55°C with an optical power of 0.45 mW obtained at 25°C. Error free transmission by these lasers at 2.5 Gbit/s is obtained over 50 km of singlemode fibre without the need for optical amplification     

Dual mirror and resonant cavity operating at 1.3 and 1.55 μm

A GaAs/AlAs Bragg mirror with two reflectivity bands centred at 1.3 and 1.55 μm is reported. High reflectivity is achieved in both bands and good agreement is observed between measured and simulated reflectivities. A microcavity structure is proposed that is resonant at both wavelengths. Such structures can be used to enhance the absorption or emission of signals at the two wavelengths     

Embedded HIMOS(R) flash memory in 0.35 μm and 0.25 μm CMOStechnologies

In this paper, the performance and reliability characteristics of the 0.35 μm/0.25 μm High Injection MOS (HIMIOS(R)) technology is described in detail. This flash EEPROM technology relies on source-side injection for programming and Fowler-Nordheim tunneling for erasing, and has been successfully implemented in a 1 Mbit memory array embedded in a 0.35 μm CMOS technology, adding only about 30% to the processing cost of digital CMOS. Due to its triple gate structure, the HIMOS(R) cell exhibits a high degree of flexibility and scalability. A fast programming operation (10 μs) at 3.3 V supply voltage is combined with an endurance of well over 100000 program/erase cycles, immunity to all possible disturb effects and a retention time that largely exceeds 100 years at 125°C. Furthermore, the cell has been scaled to a 0.25 μm version, which is a laterally scaled version with the same operating voltages and tunnel oxide thickness. The use of secondary impact ionization is investigated as well and proves to be very promising for future generations when the supply voltage is scaled below 2.5 V     

Wafer-bonded 1.55 μm vertical cavity laser arrays for wavelengthdivision multiplexing

The first electrically pumped 1.55 μm multiple wavelength VCSEL array is demonstrated. The wafer bonded array consists of four channels operating between 1509 and 1524 nm. Multiple wavelengths were defined using an etched intracavity superlattice prior to bonding. Threshold currents of 0.9 mA and peak output powers of 0.45 mW were measured     

Ultrafast two-photon nonlinearities in CdSe near 1.5 μm studiedby interferometric autocorrelation

We have used interferometric autocorrelation measurements to study the femtosecond nonlinear optical properties of bulk CdSe crystals in the wavelength region just above the half gap wavelength of 1.42 μm. Between 1.42 and 1.55 μm, we measured an ultrafast third-order nonlinearity with nonlinear refractive index n₂=1.3×10 ^-13 cm²/W^-1. Detailed modeling of the autocorrelations revealed the influence of higher order effects due to free carriers generated by nonlinear absorption. We find that CdSe is an interesting alternative material to AlGaAs for applications in this technologically important wavelength region     

Chromatic dispersion measurement in 1.55 μm narrow-band regionusing a tunable external-cavity laser

Measurement of the chromatic dispersion of an 80.6-km-long, concatenated, dispersion-shifted, single-mode fiber (DSF) with a tunable 1.55-μm external-cavity laser diode, using the phase-shift technique at 1.55 μm over 80-nm bandwidth, is discussed. It is shown that the technique does not need intricate curve-fitting equations or a large number of laser sources with specified wavelengths. As a result, the measurement configuration and procedure are relatively simple. The technique is useful for measuring the chromatic dispersion of future advanced fibers such as dispersion flattened fibers with various refractive index profiles     

Generation of high-power femtosecond pulses near 1.5 μm using acolor-center laser system

The authors have developed a high-power F-center laser system capable of generating femtosecond pulses with energies exceeding 50 pJ at wavelengths near 1.5 μm. Short pulses (140 fs) from an additive-pulse mode-locked NaCl laser are amplified in a multipass NaCl amplifier at kilohertz repetition rates. The system can generate peak powers approaching 500 MW, with wavelengths tunable from 1.52 to 1.64 μm. The amplified pulses are used to generate a continuum in various solid media without optical damage. The continuum generated in BaF₂ is extremely broad, extending from below 400 nm to 3.5 μm. Construction and operating details are discussed as well as the system's utility for femtosecond measurements in the infrared and high-power experiments     

二维硅基三角形气孔光子晶体的带隙分析

研究了以硅为背景介质周期性排列的等边三角形气孔构成的三角晶格二维光子晶体,把平面波展开法用于光子晶体能带结构的数值研究,分别改变等边三角形气孔边长、晶格常数和晶格基元旋转角度,研究带隙变化规律。研究结果表明:三角形气孔边长、晶格常数和晶格基元旋转角度的适当改变可以使光子晶体出现完全带隙,优化结构参数给出了一个完全带隙。     

Reflection-type optical waveguide switch with bow-tie electrode

Based on the total internal reflection and the plasma dispersion effect of SiGe alloy, an intersectional rib optical waveguide switch with bow-tie electrode has been proposed and fabricated for operating wavelengths of 1.3 and 1.55 μm. The thickness of the SiGe layer is 2.6 μm and the width is 9 μm. The branch angle of the switch is 2° and the bow-tie angle is 1.5°. The crosstalks are -19.6 dB for 1.3 μm and -21.8 dB for 1.55 μm. At both wavelengths, the extinction ratio is larger than 38.5 dB and the insertion loss is less than 1.70 dB. The switching time is about 180 ns     

Technology challenges for integration near and below 0.1 μm

Technology challenges for silicon integrated circuits with a design rule of 0.1 μm and below are addressed. We begin by reviewing the state-of-the-art CMOS technology at 0.25 μm currently in development, covering a logic-oriented processes and dynamic random access memory (DRAM) processes. CMOS transistor structures are compared by introducing a figure of merit. We then examine scaling guidelines for 0.1 μm which has started to deviate for optimized performance from the classical theory of constant-field scaling. This highlights the problem of nontrivial subthreshold current associated with the scaled-down CMOS with low threshold voltages. Interconnect issues are then considered to assess the performance of microprocessors in 0.1 μm technology. 0.1 μm technology will enable a microprocessor which runs at 1000 MHz with 500 million transistors. Challenges below 0.1 μm are then addressed. New transistor and circuit possibilities such as silicon on insulator (SOI), dynamic-threshold (DT) MOSFET, and back-gate input MOS (BMOS) are discussed. Two problems below 0.1 μm are highlighted. They are threshold voltage control and pattern printing. It is pointed out that the threshold voltage variations due to doping fluctuations is a limiting factor for scaling CMOS transistors for high performance. The problem with lithography below 0.1 μm is the low throughput for a single probe. The use of massively parallel scanning probe assemblies working over the entire wafer is suggested to overcome the problem of low throughput     

MOVPE growth of a monolithic VCSEL at 1.56 μm in theInGaAlAs-InAlAs system lattice matched to InP

The first demonstration of a one-step-growth vertical-cavity surface-emitting laser (VCSEL) at 1.56 μm by low-pressure metal-organic vapor phase epitaxy in the InGaAlAs (λ_gap=1.43 μm)-InAlAs system lattice matched to InP is presented. The VCSEL's threshold current density was 7.5 kA/cm² and pulsed lasing had been obtained up to +55°C for 45-μm diameter proton implanted devices. This material system represents a high potential for continuous-wave VCSELs at 1.55-μm wavelength using a simple approach for large-scale industrial production     

Small turn-on delay time in 1.3 μm InAsP/InP strained doublequantum-well lasers with very-low threshold current

It is demonstrated for the first time that compressively strained InAsP/InP double quantum-well (DQW) lasers emitting at 1.3 μm performed a very small turn-on delay time by a significant reduction in threshold current. Lasers with 200 μm cavity length and high reflection coating achieved both very low threshold current of 1.8 mA and a small turn-on delay time (200 ps) even under a bias-less 30 mA pulse current. An additional power penalty was simulated, and it was shown that these small-delay and low-threshold performances are suitable for high-speed optical parallel data transmitters in computer networks     

1.3 μm fluoride fibre laser

Laser action has been achieved in the 1.33-1.34 μm range using an Nd³⁺-doped fluorozirconate glass multimode fibre. These operating wavelengths are the closest to the important telecommunications channel at 1.3 μm of any reported for a glass laser