Preparation and optical properties of Nb-NbN multilayer films as solar selective absorptive coatings

Based on the cermet double layer structure, Nb-NbN multi-layer films for solar selective coatings were deposited by direct current reactive magnetron sputtering. The Nb/Nb-NbN/Al2O3 trilayered structure was deposited on a stainless steel (SS) substrate by using a single niobium target. The expected components were adjusted by changing the gas flowing ratios of Ar: N2. The Al2O3 antireflective layer on the top of the film was produced by r. f. magnetron sputtering using Al2O3 ceramic target. A solar absorptivity of 0.94 and a normal emissivity of 0.16 at room temperature have been achieved for the coating. Thermal vacuum aging to the samples was carried out at 350 and 500 ℃ for 1 h. The results show a good thermal stability. Microstructure and its dependence on temperature of the Nb, NbN and Nb-NbN single layers were investigated, respectively.     

PREPARATION AND SURFACE CHARACTERIZATION OF TiO_2 THIN FILMS ON GLASS BY MAGNETRON SPUTTERING METHOD

1. IntroductionTiOz thin films have excellent properties sucl1 as l1igh ref1actitre il1dex, outstal1diugoptical tra11sl11ittallce, high dielectric constant and physical chemical stabilityll'2]. Recently',the TiO2 thi1l films have drawn more attel1tions oll photocatalysis, optical coating, al1dsolar cell fab.ication[3'4l. In this work we deposited Ti thin film on glass substrate b}-nlagl1etroll sputterillg lllethod and allllealing Ti tl1in fi1l11 to fOrlll TiO2 tl1ill fi1m.2. ExperimelltalT…     

贵金属靶材相关中国专利分析

贵金属靶材在半导体集成电路、显示器、电子部件反射膜、光学记录媒体、磁记录材料、玻璃功能薄膜、装饰首饰等领域有广泛的应用,本文通过检索贵金属靶材相关中国专利,总结了贵金属靶材专利的种类分布、热点技术、应用领域等,揭示了贵金属靶材领域的研究和知识产权保护方向。     

Microstructure, mechanical and electrochemical properties evaluation of pulsed DC reactive magnetron sputtered nanostructured Cr-Zr-N and Cr-Zr-Si-N thin films

Cr-Zr-Si-N thin films with various Zr contents were deposited by a bipolar asymmetric pulsed DC reactive magnetron sputtering system. In addition, a Cr-Zr-N film without Si addition was fabricated as a reference. The influence of Zr on the constitution, microstructure, mechanical, tribological and electrochemical properties of Cr-Zr-Si-N films was investigated. The microstructure of thin films was determined by a glancing angle X-ray diffractometer (GA-XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM), respectively. A nanoindenter, a Vickers micro hardness tester and pin-on-disk wear tests were adopted to evaluate the hardness, toughness and tribological properties of thin films, respectively. The electrochemical properties of thin films were also evaluated in 3.5 wt.% NaCl aqueous solution. In case of the Cr-Zr-Si-N films, the Si content was fixed around 6-8 at.% and various Zr contents ranging from 0.5 to 13.6 at.% were achieved by changing the Zr target power density. In comparison to the Cr-Zr-N reference film, the addition of ~ 7.0 at.% Si in Cr-Zr-Si-N films resulted in a refined columnar structure and enhanced mechanical and anti-corrosion properties. A lattice constant expansion of these films was observed with increasing Zr content. A nanostructured thin film with around 5-10 nm grain size was obtained in case of a Cr-13.6 at.% Zr-6.8 at.% Si-N film. In general, the hardness, plastic deformation resistance and corrosion resistance increased also with increasing Zr content in the Cr-Zr-Si-N films. The Cr-Zr-Si-N film containing 13.6 at.% Zr exhibited a combination of high hardness, good mechanical properties, adequate tribological performance and excellent corrosion resistance in this study.     

A NEW CONCEPT TOWARD INDUSTRIALIZATION OF Cu-Ⅲ-Ⅳ2 THIN FILM SOLAR CELLS AND SOME PRELIMINARY EXPERIMENT RESULTS

A new concept of full vacuum manufacturing for Cu-Ⅲ-Ⅳ2 thin-film solar cells has been discussed Cu-Ⅲ-Ⅳ2 thin-film solar cells manufactured using full in-line reactive sputtering will result in lower cost than that of the conventional method with CdS layer fabricated with chemical bath deposition (CBS) method. Using reactive sputtering process with organometallic gases, the compositions and electronic properties of Cu-Ⅲ-Ⅳ2 thin-film can be fine-tuned and precisely controlled, n-type Cu-Ⅲ-Ⅳ2 film and ZnS suffer layer can also be deposited using the in-line sputtering instead of using the CdS layer. The environmental pollution problems arising from using CdS can be eliminated and the ultimate goal of full in-line process development can then be realized. Some preliminary experimental results on a modal solar cell fabricated by the new technique in the new concept have been presented.     

A NEW CONCEPT TOWARD INDUSTRIALIZATION OF Cu-III-VI_2 THIN FILM SOLAR CELLS AND SOME PRELIMINARY EXPERIMENT RESULTS

1.IntroductionA fterm ore than tw o decades'extensive w ork,the ultim ate solutionsusing thin film solarcellsforterrestrialapplicationshave em erged m oredefinitely.Itisgenerally believed thatthe PV m odulesm adeofa-Si:H w illdom inate thecurrentm arketso…     

溅射气压对AlN薄膜纳米结构和纳米力学性能的影响

研究在不同气压下,运用射频磁控溅射法在Si（100）上沉积氮化铝（AlN）薄膜,并使用XRD、SEM、AFM、XPS和纳米压痕等表征手段研究薄膜的性质。XRD结果表明,在低压下有利于沉积c轴取向的薄膜,而在高气压下有利于（100）面的生长。SEM和AFM结果表明,随着气压的升高,沉积速率和表面粗糙度均减小而表面粗糙度则增加。XPS结果表明,降低气压有利于减少薄膜中的氧含量,从而使制备的薄膜成分更接近其化学计量比。通过测试AlN薄膜的纳米力学性能表明,在0.30 Pa下制备的薄膜具有最大的硬度和弹性模量。     

Microstructure and optical properties of TiO2 thin films deposited at different oxygen flow rates

To research the influence of oxygen flow rate on the structural and optical properties of TiO₂ thin film, TiO₂ films on glass were deposited by reactive magnetron sputtering. The microstructure and optical properties were measured by X-ray diffractometry, AFM and UV-VIS transmittance spectroscopy, respectively. The results show that the films deposited at oxygen flow rate of 10 mL/min has the lowest roughness and the highest transmittance. The absorption angle shifts to longer wavelengths as oxygen flow rates increase from 5 to 10 mL/min, then to shorter ones as the oxygen flow rate increase from 10 to 30 mL/min. The band gap is 3.38 eV, which is nearly constant in the experiment. For the TiO₂ thin films deposited at 10 mL/min of oxyge flow rate, there are nano-crystalline structures, which are suitable for anti-reflection (AR) coating in the solar cells structure system.     

热处理及SmCo磁性层对TbDyFe薄膜磁致伸缩性能的影响

研究了SmCo薄膜的复合及热处理对TbDyFe薄膜磁性及磁致伸缩性能的影响。XRD分析表明制备态的TbDyFe薄膜为非晶态，在450℃退火后，样品仍保持非晶态结构。退火处理减少了薄膜的垂直各向异性，并且退火热应力有利薄膜的易磁化轴转向膜面，从而提高了薄膜的磁导率和TbDyFe薄膜低场下的磁致伸缩值。磁控溅射的SmCo薄膜有良好的软磁性能，它的复合也能有效地增强TbDyFe薄膜的低场磁致伸缩性能。     

溅射气压对ZnO透明导电薄膜光电性能的影响

采用射频磁控溅射方法,在普通玻璃上制备了具有高度c轴取向的ZnO薄膜,研究了溅射气压(0.2～1.5 Pa)对ZnO薄膜的微观结构和光电性能的影响.AFM、XRD、UV-Vis分光光度计及四探针法研究表明:随着溅射气压的增大,ZnO薄膜沿c轴方向的结晶质量提高,晶粒细化,薄膜表面更加致密,晶粒大小更加均匀;ZnO薄膜在400～900nm范围内的平均透过率均高于85%,其中在0.5～1.5 Pa范围内其透过率高于90%;样品在高纯氮气气氛中经350 ℃,300 s退火后,电阻率最低达到10-2 Ω-cm量级.     

氧氩流量比对溅射氧化钒薄膜结构和光学性能的影响

采用射频反应磁控溅射方法制备氧化钒(VOx)薄膜,对样品的沉积速率、物相结构、表面形貌和可见光波段的透过率进行表征,研究了在沉积气压一定的情况下,氧氩流量比对氧化钒薄膜结构和光学性能的影响。结果表明,改变氧氩流量比可明显改变薄膜结构,随着氧气比例的增加,沉积速率下降,薄膜表面出现了颗粒结构,颗粒尺寸具有增大的趋势,光透过率增大。     

功率对磁控溅射TbDyFe薄膜磁致伸缩性能的影响

采用直流磁控溅射工艺制备TbDyFe磁致伸缩薄膜，通过考察薄膜成分及其微结构，分析研究了溅射功率对薄膜磁致伸缩性能的影响。结果表明，同一薄膜内部成分相当均一，但不同溅射功率条件下的薄膜成分相异。溅射功率较低，薄膜内部微柱状体结构导致了磁各向异性的产生，磁致伸缩性能下降；溅射功率提高到120W，微柱状体结构消失，薄膜内部趋于均一连续，磁致伸缩性能较好。     

A NEW CONCEPT TOWARD INDUSTRIALIZATION OF Cu-Ⅲ-Ⅵ2 THIN FILM SOLAR CELLS AND SOME PRELIMINARY EXPERIMENT RESULTS

A new concept of full vacuum manufacturing for Cu-Ⅲ-Ⅳ2 thin-film solar cells has been discussed. Cu-Ⅲ-Ⅳ2 thin-film solar cells manufactured using full in-line reactive sputtering will result in lower cost than that of the conventional method with CdS layer fabricated with chemical bath deposition (CBS) method. Using reactive sputtering process with organometallic gases, the compositions and electronic properties of Cu-Ⅲ-Ⅳ2 thin-film can be fine-tuned and precisely controlled. n-type Cu-Ⅲ-Ⅳ2 film and ZnS suffer layer can also be deposited using the in-line sputtering instead of using the CdS layer. The environmental pollution problems arising from using CdS can be eliminated and the ultimate goal of full in-line process development can then be realized. Some preliminary experimental results on a modal solar cell fabricated by the new technique in the new concept have been presented.     

掺铝氧化锌薄膜的红外性能及机制

采用中频交流磁控溅射氧化锌铝(ZnO 2％Al2O3)陶瓷靶材的方法制备了掺铝氧化锌ZAO(ZnO：Al)薄膜．利用红外光谱仪测试了薄膜的红外反射性能,研究了薄膜厚度、基体温度和氩气压力对ZAO薄膜红外反射性能的影响规律,确定了制备具有高红外反射率的ZAO薄膜的工艺参数．     

Co/C与Co-Pt/C膜的微结构研究

利用磁控溅射方法制备Co/C和Co-Pt/C薄膜.用X射线衍射谱(XRD)和透射电子显微镜(TEM)测量样品结构和微观形貌.对Co/C和Co-Pt/C晶粒的大小进行计算,表明Co/C颗粒膜Co是以团簇的形式镶嵌在C层中的,面心立方(fcc)COPt3和面心四方(fct)Copt两个稳定有序相在Co-Pt/C薄膜中很好地...     

高K栅介质HfSixOy薄膜的制备工艺与结构分析

采用射频磁控溅射法制备HfSi_xO_y薄膜,系统研究工艺参数对HfSi_xO_y薄膜沉积速率的影响规律.对沉积态和退火HfO_2和HfSi_xO_y薄膜的结构进行了对比分析.结果表明:HfSi_xO_y薄膜的沉积速率随射频功率、Ar气体流量和粘贴Si面积的增大而增大,随溅射气压的增大而减小.衬底未加热时,制备的HfSi_xO_y和HfO_2薄膜均呈非晶态,随着衬底加热温度的上升,HfO_2薄膜呈多晶态,而HfSi_xO_y薄膜呈非晶态.HfSi_xO_y薄膜在800℃退火后仍呈非晶态,而HfO_2薄膜在400℃退火后已明显晶化,这表明HfSi_xO_y薄膜具有较高的热稳定性.     

近等原子比TiNi合金薄膜的组织及相变动态观察

采用磁控溅射法制备TiNi非晶薄膜。通过X射线衍射（XRD）、透射电子显微镜（TEn）等方法研究了TiNi合．金薄膜的组织形貌、电子衍射花样，并对其相变过程进行了动态观察。结果表明：态薄膜为非晶态，对其在515℃进行1h的晶化处理后，薄膜中析出了TiNi3相；晶化处理后的TiNi合金薄膜加热到100℃时，薄膜中R相和马氏体相以切变方式完全转变为奥氏体；当冷却至室温时，是以R相、马氏体相以及少量的奥氏体相存在。其加热过程中的相劐顶序为：马氏体相→R相→奥氏体相。冷却过程中的相变顺序为：奥氏体相→R相→马氏体相。     

反应溅射制备AlN薄膜中沉积速率的研究

通过对浅射过程中辉光放电现象及薄膜沉积速率的研究，发现随着氮浓度的增大，靶面上形成一层不稳定的AlN层，由于AlN的溅射速率远小于Al，从而使薄膜的沉积速率显著下降。同时还研究了其它溅射参数对薄膜沉积速率的影响。结果表明：随靶基距的增大靶功率的减小，不同程度引起沉积速率的下降；随着溅射气压的增大，最初沉积速率不断增大，当溅射气压增大到一定程度时，沉积速率达到最大值，之后随溅射气 压的增大，又不断减小。     

氮化铜薄膜制备中氮气比例对其结构及微观力学性能的影响

采用射频磁控溅射方法在玻璃基底上制备氮化铜薄膜,研究了氮氩混合气体中的氮气比例对薄膜择优生长取向、表面晶粒尺寸和微观力学性能的影响。结果表明:低氮气比例时,薄膜的纳米力学性能比较差;随着氮气比例的增加,氮化铜薄膜的择优生长晶面从(111)晶面转变为(100)晶面,晶粒尺寸变小,显微硬度增加,弹性模量则是先增加,后减小。     

OPTICAL CHARACTERIZATION OF TiO2 THIN FILM ON SILICON SUBSTRATE DEPOSITED BY DC REACTIVE MAGNETRON SPUTTERING

1.IntroductionTiO2thin film hasattracted considerable attention in recentyears,due to itshigh refractive index,high transparency in the visibleand near-infrared w avelength region,high dielectricconstant,w ide bandgap,high w earresistance and stability,etc.These m ake itsuitable foruses as solarcells[1-3],protectiveantireflection film s[4],photocatalytic detoxification of polluted w ater[5],electrochom ic devices[6],self-cleaning and antifogging film s[7]and so on.A tpresent,m any differenttec…