用肖特基电容电压特性数值模拟法确定调制掺杂AlxGa1-xN/GaN异质结中的极化电荷

研究发展了用肖特基电容电压特性数值模拟确定调制掺杂Al_xGa_1-xN/GaN异质结中极化电荷的方法.在调制掺杂的Al_0.22Ga_0.78N/GaN异质结上制备了Pt肖特基接触,并对其进行了C-V测量.采用三维费米模型对调制掺杂的Al_0.22Ga_0.78N/GaN异质结上肖特基接触的C-V特性进行了数值模拟,分析了改变样品参数对C-V特性的影响.利用改变极化电荷、n-AlGaN 关键词： xGa_1-xN/GaN异质结')" href="#">Al_xGa_1-xN/GaN异质结 极化电荷 电容电压特性 数值模拟     

表面钝化前后Al0.22Ga0.78N/GaN异质结势垒层应变的高温特性

用高分辨X射线衍射仪(HRXRD)研究了表面钝化前后Al0.22Ga0.78N/GaN异质结势垒层应变的高温特性,温度变化范围从室温到813K.结果表明,对未钝化的异质结,当测试温度高于523K时,Al0.22Ga0.78N势垒层开始出现应变弛豫;钝化后,在Al0.22Ga0.78N势垒层中会产生一个附加的平面拉伸应变,并随着温度的增加,势垒层中的平面拉伸应变会呈现出一个初始的增加,接着应变将减小,对100nm厚的Al0.22Ga0.78N势垒层,应变只是轻微地减小,但对于50nm厚的Al0.22Ga0.78N势垒层,则出现了严重的应变弛豫现象.     

AlxGa1-xN/GaN异质结构中Al组分对二维电子气性质的影响

通过用数值计算方法自洽求解薛定谔方程和泊松方程，研究了Al组分对Al_xGa1-xN/GaN异质结构二维电子气性质的影响，给出了Al_xGa_{1-x< /sub>N/GaN异质结构二维电子气分布和面密度，导带能带偏移以及子带中电子分布随AlxGa 1-xN势垒层中Al组分的变化关系，并用AlxGa1-xN/GaN 异质结构自发极化与压电极化机理和能 关键词： x}Ga_1-xN/GaN异质结构')" href="#">Al_xGa_1-xN/GaN异质结构 二维电子气 自发极化 压电极化     

辐射感生应力弛豫对AlmGa1－mN/GaN HEMT电学特性的影响

基于电荷控制原理建立了辐射感生Al_mGa_1-mN势垒层应力弛豫对Al_mGa_1-mN/GaN HEMTs器件电学特性影响的解析模型，并进行了仿真分析.结果表明，对于高Al组分HEMTs器件，Al_mGa_1-mN势垒层中辐射感生的应力弛豫影响更为显著.辐射感生应力弛豫不但导致2DEG下降和阈值电压正向漂移，而且能够引起漏极输出电流的明显下降.辐射感生应力弛豫是赝配Al_mGa_1-mN/GaN HEMTs辐射损伤的重要机理之一. 关键词： mGa_1-mN/GaN')" href="#">Al_mGa_1-mN/GaN HEMT 辐射损伤 应力弛豫     

AlxGa1-xN/GaN双量子阱的结构和掺杂浓度对子带间跃迁波长和吸收系数的影响

用薛定谔方程和泊松方程自洽计算的方法研究了Al_0.75Ga_0.25N/GaN对称双量子阱(DQWs)中子带间跃迁(ISBT)的波长和吸收系数对中间耦合势垒高度、中间耦合势垒宽度、势阱宽度和势垒掺杂浓度的依赖关系.研究发现,第一奇序子带S_1ood与第二偶序子带S_2even ISBT波长随着中间耦合势垒高度的降低而变短.当中间耦合势垒高度高于0.62 eV时,S_{1odd< 关键词： 自洽 x}Ga_1-xN/GaN双量子阱')" href="#">Al_xGa_1-xN/GaN双量子阱 子带间跃迁     

Al0.22Ga0.78N/GaN二维电子气中的弱局域和反弱局域效应

通过磁输运测量研究了Al_0.22Ga_0.78N/GaN二维电子气的电子相干散射中的弱局域和反弱局域化现象.在外加弱磁场的情况下，该系统表现出正-负磁阻的变化，说明在Al_0.22Ga_0.78N/GaN异质结中存在晶体场引起的电子自旋-轨道散射.同时讨论了二维电子气中不同的散射时间对温度的依赖关系，实验得到的非弹性散射时间与温度成反比，表明非弹性散射机理主要来源于小能量转移的电子-电子散射. 关键词： 二维电子气 弱局域 磁阻     

p型GaN/Al0.35Ga0.65N/GaN应变量子阱中二维空穴气的研究

对Ga面p型GaN/Al_0.35Ga_0.65N/GaN应变异质结构中形成的二维空穴气(2DHG)进行了研究.首先基于半导体-绝缘体-半导体异质结构模型确定了应变异质中的临界厚度，然后自洽求解薛定谔方程和泊松方程，计算了当中间势垒层AlGaN处于完全应变状态和半应变状态两种条件下，顶层GaN及中间层AlGaN厚度的变化对2DHG分布的影响.计算结果表明，势垒层AlGaN和顶层GaN的应变状态和厚度对极化引起的2DHG面密度及分布有重要影响.在此基础上制备了p型GaN/Al_0.35Ga_0.65N/GaN应变量子阱结构肖特基器件，并通过器件的C-V测试证实了异质结处2DHG的存在.器件响应光谱的测试结果表明，由于p型GaN/Al_0.35Ga_0.65N/GaN量子阱中强烈的极化作用和Stark效应使得器件零偏压和反向偏压时的响应光谱都向短波方向移动了10 nm，在零偏压下器件在280 nm处的峰值响应为0.022 A/W，在反向偏压为1 V时，峰值响应达到0.19 A/W，已经接近理论值. 关键词： AlGaN 二维空穴气 极化效应     

Al2O3绝缘层的AlGaN/GaN MOSHEMT器件研究

在研制AlGaN/GaN HEMT器件的基础上,采用ALD法制备了Al₂O₃ AlGaN/GaN MOSHEMT器件.通过X射线光电子能谱测试表明在AlGaN/GaN异质结材料上成功淀积了Al₂O₃薄膜.根据对HEMT和MOSHEMT器件肖特基电容、器件输出以及转移特性的测试进行分析发现：所制备的Al₂O₃薄膜与AlGaN外延层间界面态密度较小,因而MOSHEMT器件呈现出较 关键词： 2O₃')" href="#">Al₂O₃ ALD GaN MOSHEMT     

Al0.6Ga0.4N/GaN/Al0.3Ga0.7N/Al0.6Ga0.4N量子阱中的Rashba自旋劈裂

正如人们所知, 可以通过电场或者设计非对称的半导体异质结构来调控体系的结构反演不对称性(SIA)和Rashba自旋劈裂. 本文研究了Al_0.6Ga_0.4N/GaN/Al_0.3Ga_0.7N/Al_0.6Ga_0.4N量子阱中第一子带的Rashba 系数和Rashba自旋劈裂随Al_0.3Ga_0.7N插入层(右阱)的厚度w_s以及外加电场的变化关系, 其中GaN层(左阱)的厚度为40-w_s Å. 发现随着w_s的增加, 第一子带的Rashba系数和Rashba自旋劈裂首先增加, 然后在w_s>20 Å 时它们迅速减小, 但是w_s>30 Å时Rashba自旋劈裂减小得更快, 因为此时k_f也迅速减小. 阱层对Rashba系数的贡献最大, 界面的贡献次之且随w_s变化不是太明显, 垒层的贡献相对比较小. 然后, 我们假w_s=20 Å, 发现外加电场可以很大程度上调制该体系的Rashba系数和Rashba自旋劈裂, 当外加电场的方向同极化电场方向相同(相反)时, 它们随着外加电场的增加而增加(减小). 当外加电场从-1.5×10⁸ V·m^-1到1.5×10⁸ V· m^-1变化时, Rashba系数随着外加电场的改变而近似线性变化, Rashba自旋劈裂先增加得很快, 然后近似线性增加, 最后缓慢增加. 研究结果表明可以通过改变GaN层和Al_0.3Ga_0.7N层的相对厚度以及外加电场来调节Al_0.6Ga_0.4N/GaN/Al_0.3Ga_0.7N/Al_0.6Ga_0.4N量子阱中的Rashba 系数和Rashba自旋劈裂, 这对于设计自旋电子学器件有些启示.     

压力下应变异质结中施主杂质态的Stark效应

对应变GaN/Al_xGa_1-xN异质结系统,考虑理想界面突变势垒,引入简化相干势近似,采用变分法讨论了流体静压力下外界电场对束缚于界面附近的浅杂质态结合能的影响.对GaN为衬底的闪锌矿应变异质结,分别计算了(001)和(111)取向时杂质态的结合能随压力、杂质位置、电场强度以及组分的变化关系.结果表明,杂质态结合能随流体静压力呈近线性变化.电场对杂质态的Stark效应则随杂质位置不同而呈现谱线蓝、红移动.此外,还讨论了在不同压力情况下,Al组分对杂质结合能的影响.当杂质处于GaN材料中且距界面较远时,Al组分的增加使电子的二维特性增强,从而使结合能增大,且压力加剧增幅的增加;当杂质处于Al_xGa_1-xN材料中,Al组分的增加削弱了杂质与电子间的库仑相互作用,故而结合能降低. 关键词： xGa_1-xN异质结')" href="#">GaN/Al_xGa_1-xN异质结 杂质态 压力 Stark效应     

蓝宝石衬底上GaN/AlxGa1-xN超晶格插入层对AlxGa1-xN外延薄膜应变及缺陷密度的影响

室温300K下,由于Al_xGa_1-xN的带隙宽度可以从GaN的3.42eV到AlN的6.2eV之间变化,所以Al_xGa_1-xN是紫外光探测器和深紫外LED所必需的外延材料.高质量高铝组分Al_xGa_1-xN材料生长的一大困难就是Al_xGa_1-xN与常用的蓝宝石衬底之间大的晶格失配和热失配.因而采用MOCVD在GaN/蓝宝石上生长的Al_xGa_1-xN薄膜由于受张应力作用非常容易发生龟裂.GaN/Al_xGa_1-xN超晶格插入层技术是释放应力和减少Al_xGa_1-xN薄膜中缺陷的有效方法.研究了GaN/Al_xGa_1-xN超晶格插入层对GaN/蓝宝石上Al_xGa_1-xN外延薄膜应变状态和缺陷密度的影响.通过拉曼散射探测声子频率从而得到材料中的残余应力是一种简便常用的方法,Al_xGa_1-xN外延薄膜的应变状态可通过拉曼光谱测量得到.Al_xGa_1-xN外延薄膜的缺陷密度通过测量X射线衍射得到.对于具有相同阱垒厚度的超晶格,例如4nm/4nm,5nm/5nm,8nm/8nm的GaN/Al_0.3Ga_0.7N超晶格,研究发现随着超晶格周期厚度的增加Al_xGa_1-xN外延薄膜缺陷密度降低,Al_xGa_1-xN外延薄膜处于张应变状态,且5nm/5nmGaN/Al_0.3Ga_0.7N超晶格插入层Al_xGa_1-xN外延薄膜的张应变最小.在保持5nm阱宽不变的情况下,将垒宽增大到8nm,即十个周期的5nm/8nmGaN/Al_0.3Ga_0.7N超晶格插入层使Al_xGa_1-xN外延层应变状态由张应变变为压应变.由X射线衍射结果计算了Al_xGa_1-xN外延薄膜的刃型位错和螺型位错密度,结果表明超晶格插入层对螺型位错和刃型位错都有一定的抑制效果.透射电镜图像表明超晶格插入层使位错发生合并、转向或是使位错终止,且5nm/8nmGaN/Al_0.3Ga_0.7N超晶格插入层导致Al_xGa_1-xN外延薄膜中的刃型位错倾斜30°左右,释放一部分压应变.     

Alloy disorder scattering limited mobility of two-dimensional electron gas in the quaternary AlInGaN/GaN heterojunctions

Nitride heterojunction field effect transistors (HFETs) with quaternary AlInGaN barrier layers have achieved remarkable successes in recent years based on highly improved mobility of the two-dimensional electron gases (2DEGs) and greatly changed AlInGaN compositions. To investigate the influence of the AlInGaN composition on the 2DEG mobility, the quaternary alloy disorder (ADO) scattering to 2DEGs in AlInGaN/GaN heterojunctions is modeled using virtual crystal approximation. The calculated mobility as a function of AlInGaN alloy composition is shown to be a triangular-scarf-like curved surface for both cases of fixed thickness of AlInGaN layer and fixed 2DEG density. Though the two mobility surfaces are quite different in shape, both of them manifest the smooth transition of the strength of ADO scattering from quaternary AlInGaN to ternary AlGaN or AlInN. Some useful principles to estimate the mobility change with the Al(In,Ga)N composition in Al(In,Ga)N/GaN heterojunctions with a fixed 2DEG density are given. The comparison between some highest Hall mobility data reported for Al_xGa_1−xN/GaN heterojunctions (x=0.06~0.2) at very low temperature (0.3~13 K) and the calculated 2DEG mobility considering ADO scattering and interface roughness scattering verifies the influence of ADO scattering. Moreover, the room temperature Hall mobility data of Al(In,Ga)N/AlN/GaN heterojunctions with ADO scattering eliminated are summarized from literatures. The data show continuous dependence on Hall electron density but independence of the Al(In,Ga)N composition, which also supports our theoretical results. The feasibility of quaternary AlInGaN barrier layer in high conductivity nitride HFET structures is demonstrated.     

Si调制掺杂AlGaN/GaN异质结磁阻拍频现象

在低温（15K—25K）和强磁场（0—10T）条件下，对二维电子气占据两个子带的Si调制掺杂AlGaN/GaN异质结构进行磁输运测量.在一定温度范围内观察到磁阻拍频现象.根据Sander等人和Raikh等人给出的磁阻振荡的具体表达式，拟合实验结果表明磁阻拍频是由第一子带S dH振荡和磁致子带间散射引起的磁阻振荡导致的. 关键词： AlGaN/GaN异质结构 SdH振荡 磁致子带间散射 磁阻拍频     

纳米铝热剂Al/SiO_2层状结构铝热反应的分子动力学模拟

利用分子动力学模拟方法和反应力场势函数研究了Al/SiO_2层状纳米体系的铝热反应,模拟了在不同初始温度下(600,700,800,900,1000和1100 K)绝热反应的结构变化和能量性质,发现Al/SiO_2体系的铝热反应是自加热的氧化还原反应,当初始温度为900和1000 K时,Al经历了熔化前的一个临界状态,与SiO_2的铝热反应比较活跃,系统温度随着反应时间的增加不断升高,当初始温度为600,700,800和1100 K时,初始温度越高,在Al和SiO_2界面形成的Al-O层越薄,系统发生铝热反应达到的最终绝热温度越高,所用的时间(有效反应时间τ)越短,即界面扩散阻挡层的厚度对铝热反应的自加热速率产生了影响,初始温度为600,700,800,1100K时的自加热速率分别为3.4,3.5,4.7和5.4K/p8.A1/SiO_2体系的铝热反应析出了Si单质,与实验结果相符合。     

新型复合盖层延伸波长InGaAs红外探测器结构优化设计

设计并模拟计算了延伸波长至2.6 μm的复合盖层材料PIN结构In_0.82Ga_0.18As红外探测器,即PNN型盖层、PIN结构的In_0.82Ga_0.18As红外探测器。研究了不同厚度及载流子浓度的PNN盖层对探测器性能的影响。研究结果表明:在In_0.82Al_0.18As厚度为200 nm且载流子浓度为2E18、InAs_0.6P_0.4 厚度为50 nm且载流子浓度为2E17、In_0.82Ga_0.18As厚度为50 nm且载流子浓度为2E16时,探测器表现出最佳的性能。与传统PIN结构探测器相比,其相对光谱响应度仅降低10%,暗电流降低了1个数量级。计算分析了不同工作温度下的暗电流,结果显示:在120~250 K时,暗电流主要为缺陷隧穿电流;在250~300 K时,暗电流主要为带间隧穿电流;当温度大于300 K时,暗电流主要为产生-复合电流和扩散电流。     

Molecular dynamics study of Li3N

We report the results of molecular dynamics calculations of Li₃N with 600 ions in the temperature region 150 to 900 K. It is shown that the long range migration of Li ions between Li₂N layers and the ring-like motion of Li ions in a Li₂N layer occur frequently at high temperatures.     

Temperature‐dependent electroluminescence intensity in green and blue (In,Ga)N multiple‐quantum‐well diodes

The electroluminescence (EL) intensity has been investigated of green and blue (In,Ga)N multiple‐quantum‐well diodes grown on c ‐plane sapphire over a wide temperature range and as a function of current between 0.01 mA and 10 mA. The EL intensity of the green diode with p‐(Al,Ga)N electron blocking layer does not show low‐temperature quenching, especially at low injection levels, previously observed for the blue (In,Ga)N quantum‐well diodes. This finding rules out possi‐ bilities that the freeze‐out of holes at deep Mg acceptor levels and the failure of hole injections through the p‐(Al,Ga)N layer are directly responsible for the EL quenching at temperatures below 100 K. Variations of the EL efficiency with current level suggest that capture/escape efficiencies of injected carriers by the wells play an important role for the determination of EL external quantum efficiency. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Deformation mechanisms of ultra-thin Al layers in Al/SiC nanolaminates as a function of thickness and temperature

The mechanical properties of Al/SiC nanolaminates with layer thicknesses between 10 and 100 nm were studied by nanoindentation in the temperature range 25 to 100 °C. The strength of the Al layers as a function of the layer thickness and temperature was obtained from the hardness of the nanolaminates by an inverse methodology based on the numerical simulation of the nanoindentation tests by means of the finite element method. The room temperature yield stress of the Al layers showed a large ‘the thinner, the stronger’ effect, which depended not only on the layer thickness but also on the microstructure, which changed with the Al layer thickness. The yield stress of the Al layers at ambient temperature was compatible with a deformation mechanism controlled by the interaction of dislocations with grain boundaries for the thicker layers (>50 nm), while confined layer slip appeared to be dominant for layers below 50 nm. There was a dramatic reduction in the Al yield stress with temperature, which increased as the Al layer thickness decreased, and led to an inverse size effect at 100 °C. This behavior was compatible with plastic deformation mechanisms controlled by grain boundary and interface diffusion at 100 °C, which limit the strength of the ultra-thin Al layers.     

Spin polarized La0.7Sr0.3MnO3 thin films on silicon

La_0.7Sr_0.3MnO₃ polycrystalline manganite thin films were grown on silicon (Si) substrates covered by SiO_x amorphous native oxide. Curie temperatures of about 325 K were achieved for 70-nm-thick films. Strong room temperature XMCD signal was detected indicating high spin polarization at the surface. Cross-sectional TEM images show sharp interface between SiO_x and manganite without signature of chemical reaction at the interface. Unusual sharp splitting of the manganite film was observed: on the top of a transition layer characterized by low crystalline order, a magnetically robust layer is formed.     

PREPARATION OF a-AXIS ORIENTED YBa2Cu3Ox THIN FILMS

The a-axis oriented YBa₂Cu₃O_x(YBCO) thin films could be grown on (100) SrTiO₃(STO) substrates with STO buffer layers by dc and rf magnetron sputtering either by low-ering the deposition temperature, or by using a self-template technique. For the latter, the resistivity of the thin film at 290K along the substrate [001] direction is about four times larger than that in the [010] direction. The zero resistance temperatures T_c0 are 89 K in both directions. So high quality a-axis oriented YBCO thin films can be prepared by the self-template technique. Also the T_c0 increase monotonously with the reduction of the thickness of the YBCO seed layer.