Charge recombination mechanism to explain the negative capacitance in dye-sensitized solar cells

Negative capacitance(NC) in dye-sensitized solar cells(DSCs) has been confirmed experimentally. In this work, the recombination behavior of carriers in DSC with semiconductor interface as a carrier's transport layer is explored theoretically in detail. Analytical results indicate that the recombination behavior of carriers could contribute to the NC of DSCs under small signal perturbation. Using this recombination capacitance we propose a novel equivalent circuit to completely explain the negative terminal capacitance. Further analysis based on the recombination complex impedance show that the NC is inversely proportional to frequency. In addition, analytical recombination resistance is composed by the alternating current(AC) recombination resistance(Rrac) and the direct current(DC) recombination resistance(Rrdc), which are caused by small-signal perturbation and the DC bias voltage, respectively. Both of two parts will decrease with increasing bias voltage.     

Negative capacitance phenomena depending on the wake-up effect in the ferroelectric Si:HfO2 film

Negative capacitance (NC) phenomena is recently suggested as a breakthrough that can lead to the improved transistor by decreasing the subthreshold swing. To understand the NC phenomena, we investigated the effects of the ferroelectric properties such as the remnant polarization depending on the switching cycles in Si-doped HfO₂ thin film capacitor. The ferroelectric properties were controlled by using the wake-up effect, in which the remnant polarization enhances as the number of switching cycles increase. The relation between the wake-up effect and the voltage drop region with the negative differential capacitance were elucidated. The dynamic hysteresis loops were fitted based on Landau-Khalatnikov equation, and the free energy as a function of polarization was obtained. The Landau coefficients showed that the double-well feature of the free energy becomes more apparent due to the wake-up. Based on the wake-up effect on NC phenomena, we show that the NC phenomena is well described by Landau-Ginzburg theory of ferroelectrics.     

HfO2基铁电场效应晶体管读写电路的单粒子翻转效应模拟

使用器件-电路仿真方法搭建了氧化铪基铁电场效应晶体管读写电路,研究了单粒子入射铁电场效应晶体管存储单元和外围灵敏放大器敏感节点后读写数据的变化情况,分析了读写数据波动的内在机制.结果表明:高能粒子入射该读写电路中的铁电存储单元漏极时,处于"0"状态的存储单元产生的电子空穴对在器件内部堆积,使得栅极的电场强度和铁电极化增大,而处于"1"状态的存储单元由于源极的电荷注入作用使得输出的瞬态脉冲电压信号有较大波动;高能粒子入射放大器灵敏节点时,产生的收集电流使处于读"0"状态的放大器开启,导致输出数据波动,但是其波动时间仅为0.4 ns,数据没有发生单粒子翻转能正常读出.两束高能粒子时间间隔0.5 ns先后作用铁电存储单元漏极,比单束高能粒子产生更大的输出数据信号波动,读写"1"状态的最终输出电压差变小.     

Marx调制器单元设计和叠加测试

基于单元器件的成功研制,介绍了Marx调制器单元充放电回路、电压和电流的实时监测以及控制系统和连锁保护等功能的设计和实现。对IGBT固态开关的静态、动态均压进行分析和模拟,采用RCD缓冲电路实现IGBT的动态均压;对控制系统改进和优化,设计了专用电源转换模块;分压电路和电流霍尔采样回路分别实现调制器单元电压和电流的检测;连锁保护功能由控制系统和继电器控制完成。所有部件按照电气标准设计在调制器单元支架上。经过测试的4个单元进行了叠加试验,4个单元总输出24 kV,各器件在高压试验中工作正常。     

相变前的热力学平衡态对铁电液晶排列的影响

本实验选用ZLI-3654型铁电液晶(FLC)以及SE-3140型取向剂制备FLC器件样品,通过改变FLC相变过程中的降温速率以及相变前的热力学平衡态来研究FLC相变前的热力学平衡态对FLC排列的影响,共进行了十组实验.实验后,将FLC器件静态对比度进行比较,得出手性向列相到近晶A相(N^*-SmA)相变前的热力学平衡态对FLC实现均匀排列起着极其重要的作用的结论.实验结果表明:器件的静态对比度可高达620 ∶1, N^*-SmA相变前的热力学平衡态有利于形成高对比 关键词： 铁电液晶 降温速率 热力学平衡态 高对比度     

New insight into the parasitic bipolar amplification effect in single event transient production

In this paper, a new method is proposed to study the mechanism of charge collection in single event transient (SET) production in 90 nm bulk complementary metal oxide semiconductor (CMOS) technology. We find that different from the case in the pMOSFET, the parasitic bipolar amplification effect (bipolar effect) in the balanced inverter does not exist in the nMOSFET after the ion striking. The influence of the substrate process on the bipolar effect is also studied in the pMOSFET. We find that the bipolar effect can be effectively mitigated by a buried deep P⁺-well layer and can be removed by a buried SO₂ layer.     

Effect of substrate bias on negative bias temperature instability of ultra-deep sub-micro p-channel metal--oxide--semiconductor field-effect transistors

The effect of substrate bias on the degradation during applying a negative bias temperature (NBT) stress is studied in this paper. With a smaller gate voltage stress applied, the degradation of negative bias temperature instability (NBTI) is enhanced, and there comes forth an inflexion point. The degradation pace turns larger when the substrate bias is higher than the inflexion point. The substrate hot holes can be injected into oxide and generate additional oxide traps, inducing an inflexion phenomenon. When a constant substrate bias stress is applied, as the gate voltage stress increases, an inflexion comes into being also. The higher gate voltage causes the electrons to tunnel into the substrate from the poly, thereby generating the electron--hole pairs by impact ionization. The holes generated by impact ionization and the holes from the substrate all can be accelerated to high energies by the substrate bias. More additional oxide traps can be produced, and correspondingly, the degradation is strengthened by the substrate bias. The results of the alternate stress experiment show that the interface traps generated by the hot holes cannot be annealed, which is different from those generated by common holes.     

The influence of the chiral terphenylate on the tilt angle in pyrimidine ferroelectric mixtures

Pyrimidine multicomponent mixture used as a base for the preparation of ferroelectric liquid crystalline mixtures after doping with chiral dopants was tested in the aim of establishing the tilt angle dependence on the concentration of chiral dopant. The compounds being components of this mixture were doped with the same chiral dopant to check the influence of their structure on the tilt angle of ferroelectric mixtures.     

Heat transfer enhancement in MOSFET mounted on different FR4 substrates by thermal transient measurement

Miniaturization of electronic package leads to high heat density and heat accumulation in electronics device, resulting in short life time and premature failure of the device. Junction temperature and thermal resistance are the critical parameters that determine the thermal management and reliability in electronics cooling. Metal oxide field effect transistor (MOSFET) is an important semiconductor device for light emitting diode-integrated circuit (LED IC) driver application, and thermal management in MOSFET is a major challenge. In this study, investigations on thermal performance of MOSFET are performed for evaluating the junction temperature and thermal resistance. Suitable modifications in FR4 substrates are proposed by introducing thermal vias and copper layer coating to improve the thermal performance of MOSFET. Experiments are conducted using thermal transient tester (T3ster) at 2.0 A input current and ambient temperature varying from 25 ℃to 75 °C. The thermal parameters are measured for three proposed designs: FR4 with circular thermal vias, FR4 with single strip of copper layer and embedded vias, and FR4 with I-shaped copper layer, and compared with that of plain FR4 substrate. From the experimental results, FR4_I-shaped shows promising results by 33.71% reduction in junction temperature and 54.19% reduction in thermal resistance. For elevated temperature, the relative increases in junction temperature and thermal resistance are lower for FR4_I-shaped than those for other substrates considered. The introduction of thermal vias and copper layer plays a significant role in thermal performance.     

Actions of negative bias temperature instability (NBTI) and hot carriers in ultra-deep submicron p-channel metal——oxide——semiconductor field-effect transistors (PMOSFETs)

Hot carrier injection (HCI) at high temperatures and different values of gate bias V_g has been performed in order to study the actions of negative bias temperature instability (NBTI) and hot carriers. Hot-carrier-stress-induced damage at V_g=V_d, where V_d is the voltage of the transistor drain, increases as temperature rises, contrary to conventional hot carrier behaviour, which is identified as being related to the NBTI. A comparison between the actions of NBTI and hot carriers at low and high gate voltages shows that the damage behaviours are quite different: the low gate voltage stress results in an increase in transconductance, while the NBTI-dominated high gate voltage and high temperature stress causes a decrease in transconductance. It is concluded that this can be a major source of hot carrier damage at elevated temperatures and high gate voltage stressing of p-channel metal--oxide--semiconductor field-effect transistors (PMOSFETs). We demonstrate a novel mode of NBTI-enhanced hot carrier degradation in PMOSFETs. A novel method to decouple the actions of NBTI from that of hot carriers is also presented.     

Role of shape of hole in transmission and negative refractive index of sandwiched metamaterials

Transmission and negative refractive index （NRI） of metal-dielectric-metal （MDM） sandwiched metamaterial perfo- rated with four kinds of shapes of holes are numerically studied. Results indicate that positions of all transmission peaks of these kinds of holes are sensitive to the shape of the hole. Under the same conditions, the circular hole can obtain the maximum NRI and the rectangular hole can obtain the maximum frequency bandwidth of NRI. Moreover, the figure of merit （FOM） of the circular hole is the maximum too. As a result, we can obtain a higher NRI and FOM metamaterial by drilling circular hole arrays on MDM metamaterial.     

"RLC串联电路暂态过程的研究"实验中电容系统误差的测量与修正

在"RLC串联电路暂态过程的研究"实验中,由于示波器两测量探头间电容和电容箱"零电容"的存在,导致阻尼振荡周期的理论计算值与实验值之间可能产生非常大的误差.本文通过测量上述两类电容,对周期的理论计算值进行了修正,使之与实验值的相对误差明显减小.     

Reduction of charge trapping in HfO2 film on a Ge substrate by trimethylaluminum pretreatment

Trimethylaluminum pretreatment prior to HfO₂ deposition is introduced for native oxide reduction. It is identified that the trimethylaluminum pretreatment could effectively reduce native oxide, which is transformed to an aluminum oxide interfacial layer. Formation of the thin aluminum oxide layer suppresses Ge diffusion into HfO₂, reducing hysteresis in the ca‐ pacitance–voltage curve. Moreover, the device reliability of the trimethylaluminum pretreated sample is improved in a constant current stress test. This work indicates that trimethylaluminum pretreatment is an effective in‐situ method for the gate dielectric stack formation to reduce charge trapping in the HfO₂ film on a Ge substrate. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Effect of crystallization on the reliability of unipolar resistive-switching in HfO2-based dielectrics

The electroforming and unipolar resistive switching characteristics of as-deposited and annealed HfO₂ and Hf_0.6Si_0.4O₂ films are reported. The reliability of HfO₂ devices is shown to be significantly degraded by annealing at 600 °C, during which the film is observed to crystallize. In contrast, the characteristics of Hf_0.6Si_0.4O₂ devices subjected to the same annealing conditions are found to be unchanged, consistent with the fact that the films remain amorphous. These differences are attributed to the presence of grain boundaries and can have important implications for the use of HfO₂ in ReRAM applications.     

克尔介质中脉冲宽度对瞬态热光非线性效应的影响

在纳秒时域，研究了激光脉冲宽度变化对克尔介质中瞬态热光非 线性效应的影响.通过不同脉冲宽度τp下得到的二硫化碳 苯胺黑溶液的Z_scan实验结果，对瞬态热光非线性效应和光克尔效应的共存过程进行了分析 .随着脉冲宽度的增加，观察到了热光非线性效应从瞬态到稳态变化过程和Z_scan峰谷特性 的转变.同时，从声波的传播方程和光波的非线性传播方程出发，用数值计算方法模拟了这 一非线性过程，结果表明数值模拟结果和实验结果是相符的. 关键词： 瞬态热光非线性效应 脉冲宽度 Z_scan 克尔效应     

Influence of negative ion resputtering on Al-doped ZnO thin films prepared by mid-frequency magnetron sputtering

Al-doped ZnO (AZO) films were deposited on glass substrates by mid-frequency magnetron sputtering with a ceramic ZnO:Al₂O₃ (98 wt%:2 wt%) target. The origin of the high resistivity of the films at the substrate position facing the erosion area of the target was investigated. The results indicate a preferential resputtering of Zn atoms caused by the negative ions, which leads to an increase of the oxygen/metal ratio in the films. Then more Al oxides form and result in the decrease of Al_Zn (the main donor in the films) concentration in the films. Thus the free carrier concentration decreases badly. This is the main mechanism responsible for the high resistivity.     

Large negative dispersion in dual-concentric-core photonic crystal fiber with hybrid cladding structure based on complete leaky mode coupling

Considering the optical stability of solution, the sugar-solution is infused into the outer core ring of dual-concentric-core photonic crystal fiber (DCCPCF). The influences of structure parameters and solution concentration on the phase and loss matching are comprehensively analyzed. By choosing the appropriate outer core mode to completely couple with the inner core fundamental mode, the large negative dispersion PCF around 1.55 μm is designed, which has the dispersion value of − 39,500 ps/km/nm as well as bandwidth of 7.4 nm and effective mode area of 28.3 μm². The designed PCF with hybrid cladding structure can effectively compensate the positive dispersion of conventional single mode fiber, and suppress the system perturbation caused by a series of nonlinear effects. Considering the mode field mismatching between the DCCPCF and the tapered fiber, the calculated connection loss around 1.55 μm is below 3 dB. In addition, the equivalent propagation constants of two leaky modes are deduced from the coupled-mode theory, and the complete mode coupling case can be well predicted by comparing the real and imaginary parts of propagation constants.     

Raman studies of phase transitions in ferroelectric [C2H5NH3]2ZnCl4

The present paper accounted for the synthesis, differential scanning calorimetric and vibrational spectroscopy of [C₂H₅NH₃]₂ZnCl₄grown at room temperature. Differential scanning calorimetric (DSC) disclosed five phase transitions at T₁=231 K, T₂=234 K, T₃=237 K, T₄=247 K and T₅=312 K. The temperature dependence of the dielectric constant at different temperatures proved that this compound is ferroelectric below 238 K. Raman spectra as function temperature have been used to characterize these transitions and their nature, which indicates a change of the some peak near the transitions phase. The analysis of the wavenumber and the line width based on the order–disorder model allowed to obtain information relative to the thermal coefficient and the activation energy near the transitions phase.