LED光源在矿井工作面照明灯中的应用

对目前我国煤矿用灯作了简单的介绍,指出了煤矿用灯的发展方向应为节能、本质安全型;阐述了采煤工作面本质安全型LED照明灯应该具备的条件,分析了LED的发光机理.通过光谱分析,得出了LED在实际照明应用中散热的重要性;介绍了LED灯的一次散热方法及二次散热方法;对LED灯隔爆兼本安驱动电路作了设计并对小功率LED灯进行了合理的排列,结果表明隔爆兼本质安全型LED照明灯在采煤工作面是完全可以应用并具备广泛发展前景的.     

选择离线LED驱动器拓扑的挑战

在考虑使用LED驱动器将AC输入电胍转换为用于LED负载的恒定电流源的拓扑时,将LED应用分为三种功率水半是有帮助的：（1）低功率应用：要求输入低于20W,例如灯条、R灯和白炽灯的替换品;（2）中等功率应用：输入最高为50W,例如天花板筒灯和L灯：（3）高功率应用：要求输入高于50W,例如标牌灯或街灯。     

大功率LED照明灯有限元热设计与高效系统开发

随着LED亮度要求的不断提高,LED的温度分布和采用的散热手段对LED的可靠性有很大影响。利用ANSYS软件对LED照明的散热问题进行了详细的模拟计算。基于100 WLED实验和模拟结果的一致性,分析比较了不同结构和加载方式对200 WLED温度分布的影响。采用增加散热片个数及其长度、Al锭厚度、灯头的直径等因素,对LED的散热进行了优化设计,结合基于VC++的二次开发系统,较好实现了LED热模拟分析。研究发现LED照明灯的传热方向主要是轴向,轴向散热设计可提高LED开发效率;点阵排列LED灯的温度分布呈现一定的温度梯度;在基于实验验证的模拟可以较好实现不同功率的LED灯散热设计。模拟分析为LED的散热方案优化设计提供了有效的参考依据和手段。     

一种高功率LED射灯的散热设计与实验研究

以一款MR16 LED射灯为模型,采用ANSYS有限元软件进行热分析。以散热器翅片保持60℃为标准,通过实验与仿真相结合的方法,分析了LED射灯的热流功率、散热器基座厚度、LED芯片间距、对流面积对整个系统散热性能的影响。结果表明,散热器对流面积是影响灯具散热性能的最重要因素;对一定的散热器,存在一个有效的最大芯片输入功率。现有MR16 LED射灯的散热器最大散热功率只能达到2.5 W左右,要使散热功率增大并且发挥散热器最佳性能,必须增加散热器的对流面积。对该结构散热器散热性能的定量研究对今后高功率LED灯具的生产具有一定的指导意义。     

大功率LED封装有限元热分析

介绍了有限元软件在大功率LED封装热分析中的应用,对一种多层陶瓷金属(MLCMP)封装结构的LED进行了热模拟分析,比较了不同热沉材料的散热性能,模拟了输入功率以及强制空气冷却条件对芯片温度的影响.结果表明当达到热稳态平衡时,芯片上的温度最高,透镜顶部表面的温度最低,当输入功率达到3 W时,芯片温度超过了150℃,强制空冷能显著改善器件的散热性能.     

基于LED照明灯具的散热片设计与分析

新一代大功率白光LED光源具有很多优点,如节能、环保、寿命长等,但大功率LED的散热也是一个至关重要的问题。如果LED散热问题解决不好,LED灯具工作一段时间后就会输出光功率减小,芯片加速老化,工作寿命缩短。文章从LED散热问题着手,详细介绍了目前广泛商用的大功率LED器件结构及导热途径、所用散热基片的特点,以及LED所用的散热片设计和计算方法。另外介绍了一种大功率LED在散热片上不同位置温度变化的测试结果,并推导出用于计算LED器件散热的有效公式。     

功率型倒装结构LED系统热模拟及热阻分析

为了了解功率型倒装结构LED系统各部分热阻,找出LED系统散热关键,对功率型倒装结构LED系统进行了有限元热模拟,同时结合传热学基本原理分析了各部分的热阻.结果表明,LED系统中凸点,Si-submount管壳和散热体的自身热阻较小,而芯片、粘结剂、散热体-环境的热阻较大,占系统热阻主要部分.因此优化设计芯片与散热体,选取导热率高的粘结剂,可以有效降低LED系统的热阻,成为LED系统散热设计的关键.     

功率型倒装结构LED系统热模拟及热阻分析

为了了解功率型倒装结构LED系统各部分热阻,找出LED系统散热关键,对功率型倒装结构LED系统进行了有限元热模拟,同时结合传热学基本原理分析了各部分的热阻.结果表明,LED系统中凸点,Si-submount管壳和散热体的自身热阻较小,而芯片、粘结剂、散热体-环境的热阻较大,占系统热阻主要部分.因此优化设计芯片与散热体,选取导热率高的粘结剂,可以有效降低LED系统的热阻,成为LED系统散热设计的关键.     

大功率LED灯散热性能研究

在对散热性能对大功率LED灯性能的影响进行分析的基础上,探讨了影响大功率LED灯散热性能的相关因素,并以具体的对象设计了大功率LED灯的结构参数。     

基于平板热管的大功率LED散热系统模拟及优化

为解决大功率LED的散热问题,设计了平板热管散热器来实现LED芯片的高效散热。通过Flotherm模拟软件,对大功率LED在自然对流条件下的散热情况进行了三维数值模拟。通过平板热管与常规铜、铝散热基板对比,发现平板热管有效降低了大功率功率LED的结温和热阻,使得LED温度分布更为均匀。此外,还研究了平板热管LED散热系统在不同芯片功率下的热性能,并对四种不同排布方式的LED平板热管散热系统进行了优化,发现阵列分布其温度分布最为均匀,结温最低,是较优的排布方式。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.