小型化低相噪FBAR压控振荡器的研制

利用薄膜声体波谐振器(FBAR),结合GaAs异质结双极晶体管(HBT)工艺研制了一款小型化低相噪FBAR压控振荡器。将振荡三极管、偏置电路及隔离缓冲放大器集成到一个GaAs单片微波集成电路(MMIC)中,振荡管基极接薄膜电感形成负阻,发射极通过键合线与FBAR进行互连。将GaAs单片集成电路的大信号模型作为一个非线性器件,用探针台测试FBAR谐振器的单端口S参数,导入ADS软件进行谐波平衡法仿真和优化;通过电路制作和调试,达到了预期设计目标。该FBAR压控振荡器中心频率为2.44 GHz,调谐带宽15 MHz,单边带相位噪声达-110 dBc/Hz@10 kHz,与同频段同轴介质压控振荡器指标相当,但其尺寸更小,仅为5 mm×7 mm×2.35 mm。     

基于新颖调谐谐振器的低相噪VCO设计

介绍了一种采用新颖谐振器的低相位噪声窄带压控振荡器(VCO)的设计方法。该谐振器采用源与负载横向交叉耦合结构,形成一个传输零点,提高了谐振器的Q值。该谐振器通过弱耦合与变容二极管连接,从而实现电压控制滤波器通带中心频率调谐。利用该谐振器设计了一个窄带VCO,并在先进设计系统(ADS)软件里仿真验证。该VCO中心频率6.15 GHz,在调谐电压从0到15 V的范围内调谐带宽60 MHz,相位噪声在整个调谐范围内优于-132 dBc/Hz@1MHz,输出功率为8.4 dBm,功率平坦度±0.1 dBm。     

超高频(UHF)声振荡器

100—1500兆赫声表面波(SAW)振荡器是实用的,并能以延迟线或谐振器形式构成.非压电基片上的高次谐波声体波谐振器工作频率为1—10千兆赫,Q值优于石英.两种SAW途径和高次谐波体波谐振器彼此作了比较,并一起与UHF和微波应用的、由5兆赫标准晶体谐振器倍频的振荡器作了比较.UHF声振荡器减小了尺寸、重量、成本和功耗.     

FBAR技术的敏感应用与发展研究

薄膜声体波谐振器(FBAR)技术以其频率高,品质因数(Q)高,插入损耗低,与半导体集成电路(IC)工艺兼容等优良特性在无线通信领域获得了广泛应用。基于FBAR技术的传感器具有灵敏度高,体积小,线性度好及易于集成等特点,符合目前传感器的微型化、智能化、信息化的主流发展趋势。该文对FBAR传感器的研究现状、发展动向等方面进行了总结并对石英晶体微天平(QCM)、声表面波(SAW)和FBAR这几种声波质量传感器进行了比较。最后对FBAR传感器技术作了简要评述并讨论了FBAR传感器未来的发展趋势。     

自调谐VCO频段选择技术比较与设计

系统分析了自调谐的必要性和各种具有频段选择功能的LC VCO(电感电容压控振荡器)的特点,设计了一种可以应用于自调谐的LC VCO结构.该压控振荡器用5层金属0.25 μ m的标准CMOS工艺制造完成,测试结果表明,该压控振荡器在电源电压为2.7V时的功耗约为14mW,它具有约1 80MHz的调谐范围,在振荡中心频率为1.52GHz时的单边带相位噪声为-110dBc/Hz@1MHz.     

基于FBAR谐振器件的CMOS振荡电路特性比较

薄膜体声波谐振器(FBAR)是一种薄膜体声波谐振微机电系统(MEMS)器件,其与振荡电路相结合,可以将大气环境中的湿度、气压等信息转化为高频振荡信号,作为环境参数的度量。振荡电路是FBAR检测系统的关键,针对实际应用中FBAR品质因数较低,导致频率检测电路功耗大、相位噪声特性差的特点,比较了3种频率检测方案,包括现有的Pierce振荡器、环形振荡器,以及提出的改进交叉耦合振荡器。3种振荡器分别采用不同的方法来优化其关键技术指标,通过比对,为进一步的检测系统设计提供帮助。本文所采用的FBAR谐振器品质因数为205.5,采用SMIC 0.18 μm CMOS工艺设计振荡电路,所设计的3种振荡器功耗分别是26.3 mW,0.382 mW,4.32 mW,在1 MHz频偏时的相位噪声分别是-111 dBc/Hz,-152 dBc/Hz,-126 dBc/Hz,交叉耦合振荡器能满足高精确度的环境变量测量、交叉耦合结构要求。     

基于裸芯片覆膜的薄膜体声波滤波器

该文研制了一种空腔型的薄膜体声波谐振器(FBAR)滤波器裸芯片.利用FBAR一维Mason等效电路模型对谐振器进行设计,然后采用实际制作的谐振器模型形成阶梯型结构FBAR滤波器,利用ADS软件对FBAR滤波器裸芯片进行优化设计.仿真结果表明,FBAR滤波器裸芯片尺寸为1 mm×1 mm×0.4 mm,滤波器的中心频率为...     

低增益变化宽线性范围低噪声压控振荡器设计

应用TSMC 0.18μm CMOS工艺设计了一款低调谐增益变化,恒定调谐曲线间隔,恒定输出摆幅的低功耗低噪声宽带压控振荡器(Voltage Controlled Oscillator,VCO).本振荡器的振荡频率覆盖1.153~1.911GHz(49.5%)范围,相邻调谐曲线的覆盖范围大于50%,调谐增益变化范围为45.5~52.7MHz/V(13.7%),相邻调谐曲线间距变化范围为43.2~45.9MHz(5.9%),VCO输出波形的峰峰值为694~715mV(3%),调谐曲线的线性范围为0.2~1.6V(1.4V).在1.8V的电源电压下,VCO在中心频率1.53GHz处耗电电流为3.2mA,相位噪声在1MHz频偏处为-130.5dBc/Hz,FOM值为-186.5dBc/Hz.     

PLL-FM调制器用弹性表面波谐振式压控振荡器

如果使用弹性表面波谐振器组成压控振荡器,在100MHz～UHF频带的频率范围内无需倍频、调谐,就能实现设备体积小、电路简单,而且还有功耗小于弹性表面波延迟线压控振荡器的特点。本文提出把弹性表面波谐振式压控振荡器(SAWR—VCO)当作调制器的VCO使用,并进一步分析了用于锁相环(PLL)时的调制灵敏度、失真系数。还通过实验对分析结果进行了验证,同时明确了SAWR—VC的性能。最后介绍了用SAWR—VCO组成PLL调制器,做汽车电话系统移动机的调制电路具有的良好特性。     

一个2.4 GHz CMOS LC压控振荡器的设计

采用单层多晶6层金属(1P6M)的0.18μm标准CMOS工艺,设计了一个2.4 GHz电感电容压控振荡器(LC tank VCO)。该压控振荡器的电路结构选用互补交叉耦合型。测试结果表明,在VCO的输入参考频率为1 MHz,工作电压1.8 V时,工作电流为5.5 mA,频率调谐范围2.1~2.8 GHz。     

单晶LN BAW谐振器有限元仿真研究

利用离子注入剥离法(CIS)制备的铌酸锂(LN)压电薄膜可用于制备体声波(BAW)器件,近年来备受关注。滤波器的指标与谐振器的性能密切相关,但基于LN单晶薄膜的BAW谐振器,对其结构的仿真优化还未有较深入的报道。该文以LN单晶薄膜为核心压电层材料,构建了固态反射型(SMR)单晶薄膜谐振器有限元仿真模型,对其压电层厚度和布喇格反射层厚度进行了设计,并重点针对谐振器上电极的台阶结构进行了二维模型仿真,为高频LN BAW滤波器的制备提供了理论依据。     

U-band shield suspended-stripline Gunn DRO and VCO

A millimeter-wave IC dielectric resonator oscillator (DRO) is proposed. Equations that give the resonant frequency of the dielectric resonator DR in suspended stripline (SSL) are derived. A U-band voltage-controlled oscillator (VCO) with varactor tuning also has been developed. The Gunn diode and varactor used in both of the oscillators are commercially available packaged devices. Restrictions on the performance of the oscillators imposed by packaged and mounted networks and the self-characteristics of the solid-state devices have been analyzed. An electronic tuning range greater than 1000 MHz with an output power exceeding 15 dBm across the bandwidth in the 53-GHz region has been realized for the SSL VCO. An SSL DRO with an output power of more than 17 dBm and a mechanical tuning range of 1.5 GHz in the 54-GHz region has been achieved     

Transformer-Based Dual-Mode Voltage-Controlled Oscillators

In this brief, we propose to use a transformer-based resonator to build a dual-mode oscillator, e.g., a system capable of oscillating at two different frequencies without recurring to switched inductors, switched capacitors, or varactors. The behavior of the resonator configured as a one-port and a two-port network is studied analytically, and the dependence of the quality factor on the design parameters is thoroughly explored. These results, combined with the use of traditional frequency tuning techniques, are applied to the design of a wide-band voltage-controlled oscillator (VCO) that covers the frequency range 3.6-7.8 GHz. The performance of the designed VCO, implemented in a digital 0.13-mum CMOS technology, has been studied by transistor-level and 2.5D electromagnetic simulation (Agilent Momentum). A typical phase noise performance at 1-MHz offset of -104 dBc/Hz has been predicted, while the power consumption ranges from 1 to 8 mW, depending on the VCO configuration     

Switched inductor dual-band CMOS cross-coupled VCO

This letter proposes a high-performance CMOS dual-band voltage-controlled oscillator (VCO). The VCO consists of two cross-coupled VCOs coupled by a pair of switched inductors or LC resonators to vary the resonator’s inductance. A pair of nMOSFET is used to switch high- and low-frequency bands. The VCO operates at the high-band using low resonator’s inductance and the VCO operates at the low-band using large inductance. The proposed VCO has been implemented with the TSMC 0.18 μm 1P6M CMOS technology and it can generate differential signals in the frequency range of 5.6–6.66 GHz and 4.13–4.75 and it also has comparable high output voltage swings at both low and high-frequency bands. The die area of the dual-band VCO is 0.84 × 1.1 mm². At the supply voltage of 0.75 V, the high (low)-band figure of merit is ?193.6 (?192.3) dBc/Hz.     

LC voltage controlled oscillator in 0.18-μm RF CMOS

An integrated low-phase-noise voltage-controlled oscillator(VCO) has been designed and fabricated in SMIC 0.18μm RF CMOS technology.The circuit employs an optimally designed LC resonator and a differential cross-coupling amplifier acts as a negative resistor to compensate the energy loss of the resonator.To extend the frequency tuning range,a three-bit binary-weighted switched capacitor array is used in the circuit.The testing result indicates that the VCO achieves a tuning range of 60%from 1.92 to 3.35 GHz.The phase noise of the VCO is -117.8 dBc/Hz at 1 MHz offset from the carrier frequency of 2.4 GHz.It draws 5.6 mA current from a 1.8 V supply.The VCO integrated circuit occupies a die area of 600×900μm~2.It can be used in the IEEE802.11 b based wireless local network receiver.     

Fundamental-Mode Pierce Oscillators Utilizing Bulk-Acoustic-Wave Resonators in the 250-- 300MHz Range (Short Papers)

Fundamental-mode Pierce oscillators in the 250-300-MHz range have been realized utilizing a unique form of a bulk-acoustic-wave (BAW) resonator. Phase noise greater than -100 dBc/Hz (1-kHz offset) has been extrapolated from data collected on oscillators operating at -22 and -24 dBm. Higher power levels to +6 dBm have been achieved. A linear-model design was used. The circuit topology used and resonator fabrication technique shows great promise for the creation of MMIC circuits in the 200-MHz-2-GHz range.     

A small dielectric TEM mode resonator with a crossing slot and itsapplication to a cellular radio VCO

A small TEM-mode dielectric resonator which features a crossing slot on the outer ground conductor plane is presented. The slot, functioning as a short-ended stub line serially inserted into the transmission line, can tune the resonant frequency down. The resonant frequency in a stripline resonator structure is rigorously analyzed by a method based on the spectral domain approach and the equivalent circuit is derived. This resonator is used in a cellular radio VCO with a varactor connected across the slot. The performance of the VCO in the 900-MHZ cellular band is described     

基于基片集成波导谐振器的压控振荡器设计

设计了一种基于基片集成波导谐振器的X波段压控振荡器。首先分析了串联反馈式振荡器以及基片集成波导谐振器的理论,然后在高频电磁仿真软件ADS中进行仿真和设计,并通过将变容管合理地引入谐振器,实现了电调谐的目的。最终设计完成了一个工作于X波段的基片集成波导压控振荡器。此压控振荡器与传统的介质压控振荡器(DRO)相比,具有稳定性高、平面化以及成本低的优点。由于采用了ADS中的联合仿真功能进行振荡器的设计,仿真结果的准确性得到了提高,减小了实物的调试工作量。测试结果为:工作频率为7 GHz,调谐范围为30 MHz,输出功率≥7 dBm,谐波抑制度≥22 dBc,相位噪声优于-106 dBc/Hz@100 kHz。     

A 1.0 V differential VCO in 0.13 μm CMOS technology

A differential complementary LC voltage controlled oscillator(VCO) with high Q on-chip inductor is presented.The parallel resonator of the VCO consists of inversion-mode MOS(I-MOS) capacitors and an on-chip inductor.The resonator Q factor is mainly limited by the on-chip inductor.It is optimized by designing a single turn inductor that has a simulated Q factor of about 35 at 6 GHz.The proposed VCO is implemented in the SMIC 0.13μm 1P8M MMRF CMOS process,and the chip area is 1.0×0.8 mm~2.The free-running frequency is from 5.73 to 6.35 GHz.When oscillating at 6.35 GHz,the current consumption is 2.55 mA from a supply voltage of 1.0 V and the measured phase noise at 1 MHz offset is -120.14 dBc/Hz.The figure of merit of the proposed VCO is -192.13 dBc/Hz.