自组织量子点的量子态光学探测(英文)

半导体量子点主要包括在真空中外延生长的自组织量子点和在溶液中采用化学方法合成的胶体量子点,由于量子限制效应所导致的分立能级结构使得它们通常被称为"人工原子"。和自然原子不同,半导体量子点的能级结构强烈依赖于其尺寸和形状,这样就提供了更为灵活的方法来控制固体材料中的光与材料的相互作用。近年来,许多类原子的量子光学现象(包括量子干涉、Rabi振荡和Mollow荧光)都已经在单个的自组织量子点中揭示出来。与此形成对比的是,上述所有的类原子量子光学特性目前还没有在单个的胶体量子点中观察得到。在本文中,我们将侧重于介绍我们科研组以及我们和别的科研组合作对单个自组织量子点的单量子态在光学探测和相干控制方面完成的一系列工作。对单个的胶体量子点,我们认为量子相干特性的测量和控制将在新近合成的非荧光闪烁或荧光闪烁得到抑制的材料体系中得以实现。     

各向异性量子点单光子发射的高偏振度特性

研究了线偏振脉冲光场激发下,单个各向异性InGaAs量子点的高偏振光发射. 给出其偏振因子与两个正交本征态之间的交叉弛豫之间的关系式. 分析表明，交叉弛豫随激发场强度增大，并导致偏振因子随激发场入射脉冲面积减小. 关键词： 量子点 单光子发射 偏振度     

微腔增强发射的半导体量子点单光子源

单光子源是实现量子密匙分配、线性光学量子计算的基本单元。作者回顾了单光子源在量子信息科学发展中的作用,讨论了光子的统计特性,分析了具有类似原子二能级结构的半导体量子点作为单光子发射源的特点,介绍了微腔与二能级系统的耦合以及微腔量子电动力学基本原理。在弱耦合区,Purcell效应导致微腔中量子点激子复合寿命降低,因此可用微腔来改善量子点单光子发射效率。文章总结了近年来在半导体微腔增强量子点单光子发射领域的进展,探讨了分布式布拉格反射微腔、柱状微腔和光子晶体微腔等结构对改善半导体量子点单光子发射和收集效率、光子极化以及光子全同性等方面的作用,并对未来半导体量子点单光子源的发展进行了展望。     

InAs/GaAs量子点1.3 μm单光子发射特性

采用双层耦合量子点的分子束外延生长技术生长了InAs/GaAs量子点样品,把量子点的发光波长成功地拓展到1.3 μm.采用光刻的工艺制备了直径为3 μm的柱状微腔,提高了量子点荧光的提取效率.在低温5 K下,测量得到量子点激子的荧光寿命约为1 ns;单量子点荧光二阶关联函数为0.015,显示单量子点荧光具有非常好的单光子特性;利用迈克耳孙干涉装置测量得到单光子的相干时间为22 ps,对应的谱线半高全宽度为30 μeV,且荧光谱线的线型为非均匀展宽的高斯线型.     

电子自旋辅助实现光子偏振态的量子纠缠浓缩

量子纠缠浓缩可以将非最大的纠缠态转变为最大纠缠态,提高量子通信的安全性.本文基于圆偏振光和量子点-腔系统的相互作用,用一个单光子作为连接远距离纠缠光子对的桥梁,在理想条件下实现了光子偏振纠缠态的浓缩.计算结果显示,这个纠缠浓缩方案在考虑耦合强度和腔泄漏的情况下也可以保持较高的保真度,而且不需要知道部分纠缠态的初始信息,也不必重复执行纠缠浓缩过程.这不仅提高了量子纠缠浓缩的安全性,也有助于通过消耗最少的量子资源来实现高效的量子信息处理.     

脉冲激发三能级体系半导体量子点的单光子发射效率

研究了脉冲激发下单个半导体量子点中单光子发射的统计特性.在旋转波近似条件下，由系统粒子数演化主方程并结合量子回归理论推导了二阶相关函数的运动方程，利用此方程讨论了二阶相关函数随输入脉冲面积的关系.在窄脉冲宽度的脉冲激发下，单光子的发射概率p和效率η都随着强度的增强而产生振荡.研究表明，采用窄脉冲宽度，当输入脉冲面积在π附近时可以得到较高的单光子发射效率. 关键词： 半导体量子点 单光子发射 三能级系统     

半导体InAs量子点单光子发射器件

文章概述了量子点单光子源的研究现状,综述了微腔量子点耦合单光子发射器件制备中关键的低密度InAs量子点外延技术,单量子点单光子发射二阶关联函数HBT检测方法,分布布拉格反馈微腔结构的制备以及实现液氮温度下电驱动微腔量子点单光子发射器件等研究结果.     

基于量子点相干光学谱的马约拉纳费米子探测

研究了半导体纳米线/超导体复合结构中的马约拉纳费米子的存在情况,提出一种用相干光学谱探测马约拉纳费米子的全光学方法.将一束较强的泵浦激光和一束较弱的探测激光同时作用于半导体量子点,由系统的哈密顿量导出半导体量子点的相干光学谱.数值模拟结果表明,相干光学谱中呈现出由半导体量子点与马约拉纳费米子耦合诱导的明确的马约拉纳费米子迹象.半导体量子点与马约拉纳费米子之间的无接触性,避免了探测中杂质信号的引入.半导体量子点与马约拉纳费米子间的耦合强度和探测吸收谱中两尖峰之间的分裂宽度呈正比,可通过测量分裂宽度获得耦合强度,为耦合强度的确定提供了直观的测量方法.     

半导体自组织量子点量子发光机理与器件

介绍了自组织量子点单光子发光机理及器件研究进展.主要内容包括：半导体液滴自催化外延GaAs纳米线中InAs量子点和GaAs量子点的单光子发光效应、自组织InAs/GaAs量子点与分布布拉格平面微腔耦合结构的单光子发光效应和器件制备,单量子点发光的共振荧光测量方法、量子点单光子参量下转换实现的纠缠光子发射、单光子的量子存储效应以及量子点单光子发光的光纤耦合输出芯片制备等.     

1.3μm GaAs基量子点垂直腔面发射激光器结构设计与分析

结合垂直腔面发射激光器（VCSEL）原理以及量子点增益特点，计算了不同结构VCSEL的腔内损耗和量子点的模式增益.分析了激光器阈值特性以及氧化限制层对光损耗的影响.设计了含 氧化限制层的13μm量子点VCSEL结构. 关键词： 量子点 垂直腔面发射激光器 增益     

Single photon sources with single semiconductor quantum dots

In t.his contribution, we briefly recall the basic concepts of quantum optics and properties of semicon- ductor quantum clot. （QD） which a.re necessary to the nnderstanding of the physics of single-photon generation with single QDs. Firstly, we address the theory of quantmn emitter-cavity system, the fluorescence and optical properties of semiconductor QDs, and the photon statistics as well as opti- cal properties of the QDs. We then review the localizatioll of single semiconductor QDs in quantum confined optical microcavity systems to achieve their overall optical properties and perfornances in terms of strong coupling regime, elfieiency, directionality, and polarization control. Furthermore, we will discuss the recenl, progress on the fabrication of single photon sources, and various a.pproaehes for embedding single QDs into mieroca,vities or photonic crystal nanoeavities and show how to ex- tend the wavelength range. We focus in part;icular on new generations of electrically driven QD single photon source leading to high repetition rates, efficiencies at elevated temperature operation. Besides strong eoupling regime, and high collection new development;s of room temperature sin- gle photon emission in the strong coupling regime are reviewed. The generation of indistinguishable photons and remaining challenges for pract ical single-photon sources are also discussed.     

量子点单光子源的光纤耦合

半导体量子点在低温下产生谱线细锐的激子发光可制备单光子源.光纤耦合可避免低温共聚焦装置扫描定位和振动影响,是实现单光子源即插即用和组件化的关键技术.在耦合工艺上,基于微区定位标记发展出拉锥光纤与光子晶体腔或波导侧向耦合、大数值孔径锥形端面光纤与量子点样片垂直耦合等技术;然而,上述工艺需要多维度精密调节以避免柔软光纤的畸形弯曲实现对准和高效耦合.陶瓷插针或石英V槽封装的光纤无弯曲且具有大平滑端面,只要与单量子点样片对准贴合就可保证垂直收光, V槽封装的排式光纤还可通过盲对粘合避免扫描对准,耦合简单.本文在前期排式光纤粘合少对数分布Bragg反射镜(distributed Bragg reflector, DBR)微柱样片实现单光子输出基础上,经理论模拟采用多对数DBR腔提升样片垂直出光和光纤收光效率,使光纤输出单光子计数率大大提升.     

Self quenched quantum dot avalanche photodetector for mid-infrared single photon detection

In this paper a single photon detector with operating wavelength of 6 μm is proposed and its performance characteristics are studied. Intersubband absorption of single photons in quantum dot layers leads to creation of photoelectrons which are injected to multiplication region and under above breakdown condition a large output pulse is generated. The detector is designed for self quenching operation in which an additional layer called transient carrier buffer (TCB) is used for trapping of backward avalanche generated holes at the interface of TCB and charge layer. The accumulated holes impose an additional charge in such a way that the voltage across the multiplication region drops and the output is quenched. A model is developed to analyze the performance of detector and results of simulation predict detection efficiency about 12% at T = 150 K. Also the quenching and recovering performance of detector is studied and results show that both higher temperatures and higher bias improve dynamics of detector. However higher temperatures result in higher dark count rate.     

Internal cancellation of spikes using two avalanche photodiodes in series for single photon detection

<正>We propose a method of improving the performance of InGaAs/InP avalanche photodiodes by using two avalanche photodiodes in series as single photon detectors for 1550-nm wavelength.In this method,the raw single photon avalanche signals are not attenuated,thus a high signal-to-noise ratio can be obtained compared with the existing results.The performance of the scheme is investigated and the ratio of the dark count rate to the detection efficiency is obtained to be 1.3×10~(-4) at 213 K.     

相互作用量子点的自旋相关输运

介绍了与磁性电极耦合的量子点的近藤共振、单电子能级自旋劈裂、磁化和线性电导等物理性质．研究结果显示，当磁性电极磁矩取向相同的时候，线性电导在低温下呈现双峰结构．而近藤共振和单电子能级的自旋劈裂都可以通过电极的内部磁化强度来控制，可以用来产生自旋阀效应．     

Theoretical study of photon emission from single quantum dot emitter coupled to surface plasmons

Motivated by the recent pioneering advances on nanoscale plasmonics and also nanophotonics technology based on the surface plasmons (SPs), in this work, we give a master equation model in the Lindblad form and investigate the quantum optical properties of single quantum dot (QD) emitter coupled to the SPs of a metallic nanowire. Our main results demonstrate the QD luminescence results of photon emission show three distinctive regimes depending on the distance between QD and metallic nanowire, which elucidates a crossover passing from being metallic dissipative for much smaller emitter-nanowire distances to surface plasmon (SP) emission for larger separations at the vicinity of plasmonic metallic nanowire. Besides, our results also indicate that, for both the resonant case and the detuning case, through measuring QD emitter luminescence spectra and second-order correlation functions, the information about the QD emitter coupling to the SPs of the dissipative metallic nanowire can be extracted. This theoretical study will serve as an introduction to understanding the nanoplasmonic imaging spectroscopy and pave a new way to realize the quantum information devices.     

激子自旋弛豫对简并量子点发射光子对纠缠度的影响

利用粒子数运动方程和量子回归理论，计算了单个半导体量子点双激子体系脉冲激发下粒子在各能级间辐射跃迁的二阶交叉相关函数以及系统发射光子对的偏振密度矩阵.分析了激子态能级简并量子点体系发射光子对偏振纠缠特性，讨论了纠缠度随激子态间自旋弛豫的变化关系.研究表明，激子自旋弛豫会破坏该系统发射光子对的纠缠度. 关键词： 纠缠光子对 半导体量子点 二阶相关函数