Effects of GaAs-spacer strain on vertical ordering of stacked InAs quantum dots in a GaAs matrix

Vertical ordering in stacked layers of InAs/GaAs quantum dots is currently the focus of scientific research because of its potential for optoelectronics applications. Transmission electron microscopy was applied to study InAs/GaAs stacked layers grown by molecular-beam-epitaxy with various thicknesses of GaAs spacer. Thickness dependencies of quantum dot size and their ordering were observed experimentally and, then, compared with the results of strain calculations based on the finite element method. The vertical ordering did occur when the thickness of the GaAs spacer was comparable with the dot height. The ordering was found to be associated with relatively large InAs dots on the first layer. Quantum dots tend to become larger in size and more regular in plane with increasing numbers of stacks. Our results suggest that the vertical ordering is not only affected by strain from the InAs dots on the lower layer, but by total strain configuration in the multi-stacked structure.     

Annealing behavior of InAs/GaAs quantum dot structures

We investigate the annealing behavior of InAs layers with different thicknesses in a GaAs matrix. The diffusion enhancement by strain, which is well established in strained quantum wells, occurs in InAs/GaAs quantum dots (QDs). A shift of the QD luminescence peak toward higher energies results from this enhanced diffusion. In the case of structures where a significant portion of the strain is relaxed by dislocations, the interdiffusion becomes negligible, and there is a propensity to generate additional dislocations. This results in a decrease of the QD luminescence intensity, and the QD peak energy is weakly affected.     

Electronic coupling and structural ordering of quantum dots using InAs quantum dot columns

In this article, recent investigations of vertically aligned quantum dot columns conducted at Stanford University are reviewed. The quantum dots are InAs in a matrix of GaAs. Both the quantum dots and quantum dot columns are formed through strain-induced islanding, without lithography. Two aspects of these columns are discussed. First, the electronic coupling of quantum dots within columns of up to ten quantum dots is demonstrated. The coupling is adjusted and improvements to a simple light-emitting diode are shown. Second, increased uniformity of a surface quantum dot layer is shown when a subsurface layer of these columns are used. The most impressive results occur when the columns contain a large number of islands. Reduced variations in average ensemble height and diameter, called size uniformity, and average nearest neighbor distances, called structural uniformity, are shown. A surface unit cell of islands is demonstrated and the lack of a surface lattice is discussed.     

Temperature dependent optical properties of self-organized InAs/GaAs quantum dots

We report photoluminescence (PL), time-resolved PL, and PL excitation experiments on InAs/GaAs quantum dots (QDs) of different size as a function of temperature. The results indicate that both the inhomogeneous properties of the ensemble and the intrinsic properties of single QDs are important in understanding the temperature-dependence of the optical properties. With increasing temperature, excitons are shown to assume a local equilibrium distribution between the localized QD states, whereas the formation of a position-independent Fermi-level is prevented by carrier-loss to the barrier dominating thermally stimulated lateral carrier transfer. The carrier capture rate is found to decrease with increasing temperature and, at room temperature, long escape-limited ground state lifetimes of some 10 ps are estimated. PL spectra excited resonantly in the ground state transition show matching ground state absorption and emission, indicating the intrinsic nature of exciton recombination in the QDs. Finally, the PL excitation spectra are shown to reveal size-selectively the QD absorption, demonstrating the quantum-size effect of the excited state splitting.     

Optical characterisation of MOVPE grown vertically correlated InAs/GaAs quantum dots

Structures with vertically correlated self-organised InAs quantum dots (QDs) in a GaAs matrix were grown by the low-pressure metal-organic vapour phase epitaxy (MOVPE) and characterised by different microscopic techniques. Photoluminescence in combination with photomodulated reflectance spectroscopy were applied for characterisation of QDs structures. We show that combination of both methods allows detecting optical transitions originating both from QDs and wetting (separation) layers, which can be than compared with those obtained from numerical simulations. On the basis of obtained results, we demonstrate that photoreflectance spectroscopy is an excellent tool for characterisation of QDs structures wetting layers and for identification of spacer thicknesses in vertically stacked QDs structures.     

InAs/GaAs量子点材料和激光器

介绍了近年来长波长InAsG/aAs量子点材料的生长、结构性质和量子点激光器的研究进展。     

InAs/GaAs自组装量子点结构的能带不连续量

为确定异质结界面带阶,结合光致发光(PL)谱和深能级瞬态谱(DLTS)测量结果,利用有效质量近似理论,计算得到了InAs/GaAs自组装量子点结构的能带不连续量,其中导带不连续量ΔEc＝0.97 eV,价带不连续量ΔEv＝0.14 eV.     

基于石墨烯/铟砷量子点/砷化镓异质结新型光电探测器

研究了一种石墨烯/铟砷量子点/砷化镓界面形成的异质结探测器的暗电流特性以及光电响应性质.虽然石墨烯具有很高的电子迁移率,但受限于较低的光子吸收率,使其在光电探测领域的应用受到了限制.而半导体量子点具有量子效率高,光吸收能力强等独特优点.于是利用石墨烯-砷化铟量子点-砷化镓异质结结构制备了一种新型光电探测器.并对该探测器的响应率、I-V特性曲线、暗电流特性、探测率、开关比等关键性能进行了研究.其在637 nm入射光情况下的响应率、探测率以及开关比可分别达到为17. 0 m A/W、2. 3×10~(10)cm Hz~(1/2)W~(-1)和1×10~3.而当入射光为近红外波段的940纳米时,响应率进一步增加到了207 m A/W.同时,还证实了该器件的暗电流、肖特基势垒高度和理想因子对温度的都具有较高的依赖性都较强.     

Stable Temperature Characteristics of InAs／GaAs Quantum Dots at Long Wavelength Emission

The time-resolved photoluminescence and steady photoluminescence (TRPL and PL) spectra on self-assembled InAs/GaAs quantum dots (QDs) are investigated. By depositing GaAs/InAs short period superlattices (SLs), 1. 48μm emission is obtained at room temperature. Temperature dependent PL measurements show that the PL intensity of the emission is very steady. It decays only to half as the temperature increases from 15 K to room temperature, while at the same time, the intensity of the other emission decreases by a factor of 5 orders of magnitude. These two emissions are attributed to large-size QDs and short period superlattices (SLs), respectively. Large-size QDs are easier to capture and confine carriers, which benefits the lifetime of PL, and therefore makes the emission intensity insensitive to the temperature.     

InAs/GaAs多层堆垛量子点激光器的激射特性

利用固态源分子束外延技术，按S-K模式生长出五层堆垛InAs/GaAs量子点（QD）微结构材料. 用这种QD材料制成的激光器，内光学损耗为2.1cm-1，透明电流密度为15±10 A/cm2. 对于条宽100μm，腔长2.4mm的激光器（腔面未经镀膜处理），室温下基态激射的波长为108μm，阈值电流密度为144A/cm2，连续波光功率输出达2.67W（双面），外量子效率为63%，特征温度为320K. 研究了QD激光器翟激射特性，并对结果作了讨论.     

Temperature dependence of InAs/GaAs quantum dots solar photovoltaic devices

This paper presents the temperature dependence measurements characterisation of several InAs/GaAs quantum dots （QDs） solar cell devices. The devices with cylindrical geometry were fabricated and characterised on-wafer under 20 suns in a temperature range from 300°K to 430°K. The temperature dependence parameters such as open circuit voltage, short circuit density current, fill factor and efficiency are studied in detail. The increase of temperature produces an enhancement of the short circuit current. However, the open circuit voltage is degraded because the temperature increases the recombination phenomena involved, as well as reducing the effective band gap of the semiconductor.     

Structural and infrared absorption properties of self-organized InGaAs/GaAs quantum dots multilayers

Self-organized InGaAs/GaAs quantum dots (QDs) stacked multilayers have been prepared by solid source molecular beam epitaxy. Cross-sectional transmission electron microscopy shows that the InGaAs QDs are nearly perfectly vertically aligned in the growth direction [100]. The filtering effect on the QDs distribution is found to be the dominant mechanism leading to vertical alignment and a highly uniform size distribution. Moreover, we observe a distinct infrared absorption from the sample in the range of 8.6–10.7 μm. This indicates the potential of QDs multilayer structure for use as infrared photodetector.     

InAs/GaAs量子点中间带太阳电池的理论研究与优化

从荧光粉散射机理分析了LED器件色角向分布不均匀的形成原因,提出了一种利用逐点步进光学设计方法,实现了不同入射角度内蓝光光程相等的远荧光粉层结构。应用该方法设计了使用不同折射率载体的LED远荧光粉层光学结构。模拟结果显示,应用所设计的光学形状的远荧光粉层结构,相比传统平面荧光粉层结构,75°方向光斑边缘与中心法线方向色差du′v′从0.05降低到0.01左右,色温偏移降低了43%~98%不等,有效改善了白光LED远程荧光粉封装结构的色度均匀性。该设计不需要增加或改变封装工艺手段,工业生产实现简单,额外成本很少,具有较强的实际应用价值。 更多还原     

Tuning of electronic states in self-assembled InAs quantum dots using an ion implantation technique

We report the tunability of up to 150 meV of the ground state transition of self-assembled InAs quantum dots (QDs) using Mn ion implantation and subsequent annealing. Because of the exciton localization in the quantum dots, the photoluminescence efficiency (T=12K) of the quantum dot transition remains at 80% of its original value after implantation with a Mn dose of 1×10¹³ cm⁻²ions. Strong luminescence still remains at room temperature. At a high implantation dose (1×10¹⁵ cm⁻²) and rapid thermal annealing (700°C for 60s) about 25% of the QD luminescence intensity is recovered at T=12K.     

InAs/GaAs量子点中间带太阳电池的理论研究与优化

基于InAs/GaAs量子点中间带太阳电池(QD-IBSC)结构和载流子漂移扩散理论建立了计算电流密度与静电势的数学模型,从理论上分析了量子点中间带太阳电池的电压电流特性,定量讨论了量子点层厚度、温度以及n型掺杂对电压电流特性的影响.模拟结果表明:在i层厚度取400 nm时转化效率达到最大值14.01％;温度会对量子点中间带太阳电池的电压电流特性产生影响,温度在300～350 K范围内,开路电压Voc随温度的升高而明显减小,短路电流Jsc几乎不变;对i区进行n型掺杂会抑制量子点层发挥作用.     

室温全电可操作的InAs/GaAs量子点存储器

报道基于高电子迁移率晶体管(HEMT)结构的InAs/GaAs量子点存储器,它既可以在室温下工作,又可以完全由栅极电压来控制其存储状态.在室温下通过对InAs/GaAs量子点存储器的延滞回线、偏压降温C-V等特性的实时测试,证明了其存储机理是由量子点层的深能级引起的,而并非是由量子点本征能级的充、放电所造成的.     

室温全电可操作的InAs/GaAs量子点存储器

报道基于高电子迁移率晶体管(HEMT)结构的InAs/GaAs量子点存储器,它既可以在室温下工作,又可以完全由栅极电压来控制其存储状态.在室温下通过对InAs/GaAs量子点存储器的延滞回线、偏压降温C-V等特性的实时测试,证明了其存储机理是由量子点层的深能级引起的,而并非是由量子点本征能级的充、放电所造成的.     

Effects of growth interruption on the evolution of InAs/InP self-assembled quantum dots

We investigated the change in the structural and optical properties of InAs/InP quantum structures during growth interruption (GI) for various times and under various atmospheres in metalorganic chemical vapor deposition. Under AsH₃ + H₂ atmosphere, the mass transport for the 2D-to-3D transition was observed during the GI. Photoluminescence peaks from both quantum dots (QDs) and quantum wells were observed from the premature QD samples. The fully developed QDs showed the two distinct temperature regimes in the PL peak position, full width at half maximum (FWHM) and wavelength-integrated peak intensity. The two characteristic activation energies were obtained from the InAs/InP QDs: ∼10 meV for intra-dot excitation and 90 ∼ 110 meV for the excitation out of the dots, respectively. It was also observed that the QD evolution kinetics could be suppressed in PH₃ + H₂ and H₂ atmospheres. The proper control of GI time and atmosphere might be a useful tool to further improve the properties of QDs.     

Electron beam pre-patterning for site-control of self-assembled InAs quantum dots on Inp surfaces

A site control technique for individual InAs quantum dots (QDs) formed by self-assembling has been developed, using scanning electron microscope (SEM) assisted nano-deposition and metal organic vapor phase epitaxy (MOVPE). In a first step we characterize a device with randomly distributed InAs QDs on InP, using resonant tunneling and transmission electron microscopy (TEM). Secondly, we use nano-scale deposits, created at the focal point of the electron beam on an InP based heterostructure, as “nano growth masks”. Growth of a thin InP layer produces nano-holes above the deposits. The deposits are removed by oxygen plasma etching. When InAs is supplied on this surface, QDs are self-assembled at the hole sites, while no InAs dots are observed in the flat surface region. A vertical single electron tunneling device is proposed, using the developed technique.