共查询到19条相似文献,搜索用时 78 毫秒
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氢原子在Cat-CVD法制备多晶硅薄膜中的作用 总被引:4,自引:4,他引:0
采用钨丝催化化学气相沉积(Cat—CVD)方法制备多晶硅(p-Si)薄膜,研究氢气稀释率(FR(H2)/(FR(H2) FR(SiH4))对制备多晶硅薄膜的影响。XRD和喇曼光谱分析分别显示(111)面取向的多晶硅峰及喇曼频移为520cm^-1多晶硅峰的强度随氢气稀释率的增加而增强,由喇曼光谱计算的结晶度也有同样的趋势。通过分析测试结果得出,氢原子以表面脱氢、刻蚀弱的Si—Si键.及进入晶格内部进行深度脱氢等方式改善薄膜材料的结晶度。 相似文献
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采用催化化学气相沉积法(Cat-CVD)制备多晶硅(p-Si)薄膜的初期会形成一层比较厚的非晶硅(a-Si)孕育层。这层孕育层作为p-Si的前驱生长物,给p-Si的晶化提供晶核,同时这层薄膜又存在较多的缺陷,严重影响了p-Si器件的性能。文章采用p-Si的间断生长,对预先沉积的a-Si孕育层进行数分钟的氢原子刻蚀,目的是刻蚀掉有严重缺陷的Si—Si键,保留与晶体硅匹配的Si—Si键,促进晶核形成,抑制孕育层的再生长。经XRD和SEM测试发现,间断p-Si的生长,经若干分钟的H原子处理后多晶硅很快就形成,结晶取向在(111)面上最强,晶粒尺寸平均为80nm。而传统方法连续生长20min的硅薄膜经XRD测试未出现多晶硅特征峰。结果表明,用Cat-CVD制备p-Si薄膜,间断生长过程,用氢原子处理预先沉积的一层a-Si孕育层,可以抑制孕育层的生长,提高了p-Si薄膜的晶化速率。 相似文献
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对低压化学气相沉积(LPCVD)制备多晶硅薄膜的生长工艺与钝化性能进行研究,重点分析了沉积温度、硅烷体积流量和沉积时间对薄膜生长和钝化性能的影响。在590~635℃沉积温度内,多晶硅薄膜生长速率与沉积温度近似呈线性关系,钝化性能随着沉积温度的增加先变优再变差;在250~1 150 cm3/min硅烷体积流量内,多晶硅薄膜的生长速率与硅烷体积流量基本呈线性关系,当硅烷体积流量为1 150 cm3/min时,钝化性能明显变差;随着多晶硅薄膜厚度增加,钝化性能先变优后稳定。使用优化后的工艺制备多晶硅薄膜样品并对其进行测试,测试结果表明样品的隐性开路电压为749 mV,饱和电流密度为1.46 fA/cm2,钝化性能最佳。 相似文献
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Cat-CVD法制备硅薄膜及在TFT中的应用进展 总被引:1,自引:1,他引:0
目前有源平板显示领域主要采用PECVD法制备TFT用硅薄膜,但是由于PECVD中等离子对Si薄膜的损伤以及淀积薄膜的温度很高的缺点,使其在制备高迁移率TFT的应用中受到了限制。新出现的催化化学气相淀积法(Cat-CVD)与PECVD法相比,具有淀积速率高、原料气体利用效率高、衬底温度低、生长的薄膜致密、电学特性好等优点,将更有希望成为TFT用硅薄膜制备的新技术。文章对Cat-CVD法的工作机理及其在TFT中的应用进展进行了详细总结,归纳了各种催化丝材料,并对当前Cat-CVD技术研究中的不足及其以后的研究发展进行了讨论。 相似文献
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介绍了热壁低压化学气相淀积(HWLPCVD)多晶硅簿膜的结构,电子,光学和腐蚀性能。 相似文献
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化学气相沉积(CVD))金刚石薄膜优异的光学性能在近几年得到了广泛的重视,关于它的研究也在近几年取得了较大的突破。综述了CVD金刚石薄膜的光学性能,着重从成核、生长和后期处理三个方面对光学级CVD金刚石薄膜的制备进行了讨论,并对今后的研究作了展望。 相似文献
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利用激光化学气相沉积(LCVD)方法,以钛金属有机化合物为前驱体,以O2为反应气体,在激光功率PL为0~200 w、基板预热温度为400~700℃的条件下,制备出了金红石型TiO2薄膜和金红石型与锐钛矿型混合TiO2薄膜.研究表明,激光功率和基板预热温度对所沉积的TiO2薄膜的物相组成、截面组织,表面形貌和薄膜生长速度均有着显著的影响. 相似文献
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The techniques of initiated chemical vapor deposition (iCVD) and oxidative chemical vapor deposition (oCVD) enable the fabrication of chemically well‐defined thin polymeric films on complex objects with micro‐ and nano‐scale features. By depositing polymers from the vapor phase, many wetting and solution effects are avoided, and conformal films can be created. In iCVD, a variant of hot filament CVD, the deposition rate is enhanced and chemical functionalities of the polymers' constituents are maintained by including a thermally labile initiator in the feed stream. Due to the low energy required when using an initiator, delicate substrates can be coated. In oCVD, infusible, electrically conductive films are formed directly on the substrate of interest as the oxidant and monomer are introduced into the reactor simultaneously. This Feature Article provides an overview of the work that has been done to develop iCVD and oCVD into platform technologies. Relevant background, fundamentals, and applications will be discussed. 相似文献
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Simultaneous improvement of mechanical properties and lowering of the dielectric constant occur when films grown from the cyclic monomer tetravinyltetramethylcyclotetrasiloxane (V4D4) via initiated chemical vapor deposition (iCVD) are thermally cured in air. Clear signatures from silsesquioxane cage structures in the annealed films appear in the Fourier transform IR (1140 cm?1) and Raman (1117 cm?1) spectra. The iCVD method consumes an order of magnitude lower power density than the traditional plasma‐enhanced CVD, thus preserving the precursor's delicate ring structure and organic substituents in the as‐deposited films. The high degree of structural retention in the as‐deposited film allows for the beneficial formation of intrinsically porous silsesquioxane cages upon annealing in air. Complete oxidation of the silicon creates ‘Q’ groups, which impart greater hardness and modulus to the films by increasing the average connectivity number of the film matrix beyond the percolation of rigidity. The removal of labile hydrocarbon moieties allows for the oxidation of the as‐deposited film while simultaneously inducing porosity. This combination of events avoids the typical trade‐off between improved mechanical properties and higher dielectric constants. Films annealed at 410 °C have a dielectric constant of 2.15, and a hardness and modulus of 0.78 and 5.4 GPa, respectively. The solvent‐less and low‐energy nature of iCVD make it attractive from an environmental safety and health perspective. 相似文献
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Preferred crystallographic orientation (texture) in thin films of technologically important materials frequently has a strong effect on the properties of these films and is important for stable surface properties. The deposition of organized molecular films of a poly‐perfluorodecylacrylate, poly‐(1H,1H,2H,2H‐perfluorodecyl acrylate) (p‐PFDA), by initiated chemical vapor deposition (iCVD) is described. The tendency of p‐PFDA to crystallize in a smectic B phase has been reported in films prepared from solution but not for those using a CVD technique. The degree of crystallinity and the preferred orientation of the perfluoro side chains, either parallel or perpendicular to the surface, are controlled by tuning the CVD process parameters (i.e., initiator to monomer flow rate ratio, filament temperature, and substrate temperature). Films with no observable X‐ray diffraction patterns are also achieved. The observed differences in crystal texture strongly impact the observed water contact angles (150° to 130°, advancing) and corresponding hysteresis behavior. Low hysteresis (<7°) is associated with high crystallinity, particularly when the orientation of the crystallites resulted in the perfluoro side groups being oriented parallel to the surface. The latter texture resulted in smoother film than the texture with the chains oriented perpendicular to the surface and this can be very advantageous for applications in which relatively smooth but still crystalline films are needed. 相似文献
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Yuan Zhou Kasun Fernando Juanyong Wan Fangze Liu Shreetu Shrestha Jeremy Tisdale Chris J. Sheehan Andrew C. Jones Sergei Tretiak Hsinhan Tsai Huihui Huang Wanyi Nie 《Advanced functional materials》2021,31(23):2101058
The chemical vapor deposition (CVD) method is a dry approach that can produce high quality crystals and thin films at large scale which can be easily adapted by industry. In this work, CVD technology is employed to grow high quality, large size all-inorganic cesium lead bromide perovskite crystalline film for the first time. The obtained films have millimeter size crystalline domains with high phase purity. The growth kinetics are examined in detail by optical microscopy and X-ray diffraction. The deposition rate and growth temperature are found to be the key parameters allowing to achieve large scale crystal growth. The large crystalline grains exhibit exceptional optical properties including negligible Stokes shift and uniform photoluminescence over a large scale. This suggests a high degree of crystallinity free from internal strain or defects. A lateral diode within one large crystalline grain is further fabricated and significant photo-generated voltage and short circuit current are observed, suggesting highly efficient carrier transport and collections without scattering within the grain. This demonstration suggests that the CVD grown all-inorganic perovskite thin films enable a promising fabrication route suitable for photovoltaic or photo-detector applications. 相似文献
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A series of poly(oligothienylene vinylenes) (PTmVs, m = 2–4) with a varying number of consecutively bound thienylene rings are successfully prepared in thin films by chemical vapor deposition polymerization (CVDP) using the corresponding bis(halomethyl)thiophenes as starting materials. The chemical and electronic structures are studied spectroscopically and also by cyclic voltammetry. Top‐gate field‐effect transistors are fabricated by two consecutive CVDP cycles of PTmV and poly(p‐xylylene) followed by the deposition of a Au gate electrode. In the case of a PT3V active layer, a field‐effect mobility value of 0.5 × 10–4 cm2 V–1 s–1 is obtained. 相似文献