Zr还原法制备高纯度Ti_4O_7及其电催化处理2,4-二氨基甲苯废水

基于Zr高温还原锐钛型TiO_2法,制备出了电催化材料Ti_4O_7,并用XRD和SEM技术对样品的组成、形貌进行了表征。结果表明,在氩气气氛下,反应温度为1 050℃,反应时间为8h,Zr和TiO_2的摩尔比为1∶3时可以得到较为纯净的Ti_4O_7。以自制Ti_4O_7/Ti电极为阳极,Pt电极为阴极,恒电流0.3A,电流密度为0.15A/cm2条件下电解处理2,4-二氨基甲苯(TDA)废水,结果表明,Ti_4O_7/Ti电极对TDA废水具有一定催化作用,反应180min,废水TDA去除率为62.0%,COD去除率为40.3%。     

碳热还原合成TiC粉末及相演变

以纳米TiO2/碳黑为原料,通过碳热还原法合成了粒度较小的微细TiC粉末.产物粉末的XRD研究表明,纳米TiO2碳热还原合成TiC的相演变顺序为:TiO2(Anatase)→TiO2(Rutile)→TinO2n-1(n≥3)→Ti2O3→Ti(C,0)→TiC.此外.根据反应率可将纳米TiO2碳热还原分为3个连续阶段:第一阶段为TiO2的碳热还原,产物为一系列中间钛氧化物TinO2n-1(n≥3),反应速率最慢;第二阶段主要为Ti2O3的碳化反应,产物为Ti(C,O),反应速率最快;第三阶段为Ti(C,O)与C的置换反应,产物为TiC,反应速率较快.     

700℃熔盐电解制备固态钛铁合金化合物

采用熔盐电解法,在700℃的NaCl-CaCl2熔盐体系中直接电解固态金属氧化物制备钛铁合金化合物,以固态Fe粉和TiO2粉混合物为阴极,石墨棒为阳极,刚玉坩埚电解槽,槽电压3.4 V.结果表明,Fle粉和TiO2粉被电解得到钛铁合金.本文对Fe和TiO2不同配比阴极进行了研究,发现不同铁含量的阴极产物不同,在前7 h内随着铁元素含量的增加电解反应速度提高.     

钙热还原法制备钛粉过程的研究

以颜料级TiO2、分析纯无水CaCl2和金属钙为原料,探索一种真空钙热还原制备金属钛粉的新方法,并借助XRD,SEM/EDS等设备对产物成分和钛粉进行表征。结果表明,添加的CaCl2可有效地减弱烧结影响并增大了气-固反应界面有助于还原反应。当CaCl2与TiO2比例为1∶4时,片状原料在1000℃下和钙蒸气充分反应6h,还原产物酸洗干燥后制备出低杂质含量的钛粉。粒度分布在10～20μm之间,粉末颗粒呈不规则形状,分布均匀且无大块团聚现象。     

熔盐电解法制备TiW合金

采用熔盐电解法直接由TiO2和WO3混合物电极制备了高W含量的TiW合金,并对电解中的电流变化、物相组成和组织演变进行了研究分析。在900℃和3.1 V的电解条件下,在熔融CaCl2熔盐中,以石墨为阳极、TiO2和WO3的混合物为阴极进行电解,采用SEM、EDS和XRD等方法对电解还原过程中的产物进行了分析。电解后可制得成分可控的钛钨合金,氧含量较低。     

开放体系下碳热还原法制备碳氮化钛粉末的研究

在开放体系下,采用碳热还原氮化的方法制备出了碳氮化钛粉末.结合TG、DSC、XRD、SEM等分析测试手段对开放体系下TiO2的碳热还原氮化的反应过程,以及该过程中的物相演变进行了研究.结果表明,随着温度的升高,反应过程中的物相演变遵循TiO2(anatase)→TiO2(rutile)→Ti4O7→Ti3O5→Ti(N,O)→Ti(C,N,O)→Ti(C,N)的顺序;1355℃时,对应着中间氧化物Ti3O5向立方相Ti(C,N,O)的转变,该过程在整个反应进程中转化速度最快;当,m(Ti):m(C)=1:2.7,氮气流量为500ml/min,1600℃下保温3h的情况下,可获得晶粒大小为40.9nm的TiC0.704N0.296粉末.     

几种碳源对碳热还原氮化法制备Ti(C,N)粉末的影响

以纳米TiO2和不同碳源为原料,采用碳热还原氮化法,制备了Ti(C,N)粉末.通过X射线衍射分析、热分析、扫描电镜、化学成分分析等手段研究了TiO2碳热还原氮化过程的反应机理和不同碳源对制备碳氮化钛粉末的影响.结果表明,在TiO2碳热还原氮化过程中,前期主要为TiO2/C固-固反应,后期CO参与的气-固反应变为主要反应...     

还原氧化石墨烯/TiO_2纳米管复合材料的制备及其光电催化还原CO_2的研究

采用阳极氧化法制备二氧化钛(TiO_2)纳米管,采用改良Hummers氧化法-浓碱法制备还原氧化石墨烯(RGO),采用阳极电化学沉积法制得RGO/TiO_2纳米管复合材料,以复合材料为反应阴极,以铂片(Pt)为反应阳极,光电催化还原二氧化碳(CO_2)为乙醇。并对制得的RGO/TiO_2纳米管复合材料进行了表征。结果证明:采用阳极电化学沉积法施加20V电压反应6h可有效制得RGO/TiO_2纳米管复合材料;以2%(wt.,质量分数)碳酸氢钠(NaHCO_3)水溶液为电解液,在紫外灯照射下施加1.5V电压,反应温度为50℃,反应时间为1h条件下,CO_2被还原为乙醇,产量为185.08nmol/(h·cm~2)。     

等离子体辅助球磨活化对Al_2O_3+C合成AlN固-固反应的影响机制

利用介质阻挡放电等离子体辅助球磨和普通球磨分别对Al_2O_3+C混合物料进行活化,研究等离子体辅助球磨活化后Al_2O_3+C合成AlN的碳热还原反应机制。结果表明,等离子体辅助球磨30h的Al_2O_3+C,在N2气氛中1 400℃下保温4h,Al_2O_3即可全部转化为AlN,Al_2O_3+C的碳热还原反应符合固-固反应机制。相对于球磨活化单一的Al_2O_3粉末,等离子体辅助球磨Al_2O_3+C混合粉末可以缩短10h的球磨活化时间,这主要是由于在等离子体与球磨的协同作用下,有利于Al_2O_3与C形成适于固-固反应的均匀互溶的精细复合结构,使得反应扩散通道增加,平均扩散路径缩短,这在动力学方面大大促进了Al_2O_3+C的碳热还原反应,并促使反应按照固-固机制进行。     

氟盐-氧化物体系电解制备Al-Cu-Y合金的电极还原过程研究

采用Na_3AlF_6-AlF_3-LiF-MgF_2为基础电解质,Al_2O_3-CuO-Y_2O_3为原料的氟盐-氧化物体系熔盐电解制取Al-Cu-Y合金。重点通过循环伏安分析Y(Ⅲ)在阴极的电极还原过程,利用扫描电镜(SEM)及能谱(EDS)表征并对比分析热还原产物及电解产物的成分及物相组成。结果表明:AlF_3-NaF-5%LiF-5%MgF_2(质量分数,下同)(n(NaF)/n(AlF_3)=2.2)体系在温度1 208K、电压3.0V、阴极电流密度0.7A/cm~2、电解时间2h条件下能够制取Al-Cu-Y合金。Cu(Ⅱ)在碳质电极表面可一步直接还原为零价态Cu(0);Y(Ⅲ)不能在体系内直接还原为零价态Y,而是在预先形成的Al-Cu活性阴极表面还原并合金化,从而形成强化相Al_3Y,并与Al_2Cu强化相同时富集于铝基体相晶界。通过在熔盐底部的液态铝热还原CuO及Y_2O_3也可形成Al-Cu-Y合金,但铝基体相晶界富集AlCu相及AlY相,Cu及Y含量不易控制,且存在较多O、C杂质元素。     

Dependence of nitriding degree of Ti surface by non-LTE nitrogen plasma on various plasma parameters

Experiments of plasma nitriding of titanium are carried out by two plasma sources. One is a microwave discharge plasma source under several Torr, and the other is a nitrogen arc jet generated under atmospheric pressure followed by rapid expansion into a gas wind tunnel. The relationship between the surface density of nitrogen atoms in the α-Ti and various plasma parameters is systematically studied. For the microwave nitrogen plasma, it is found that the effect of the vibration temperature is the most essential for the surface nitriding, whereas the effect of electron temperature, density and rotation temperature is less remarkable. It is also found that the higher vibration temperature of the microwave discharge nitrogen plasma makes the target temperature higher, and consequently, the surface density of atomic nitrogen remarkably increased. However, the effect of target temperature is less remarkable for the arc jet nitrogen plasma.     

Titanium and Titanium Alloys—From Raw Material to Semi‐finished Products

With a total of 0.6 %, titanium ranks fourth among metals, behind iron, aluminum, and magnesium, and ninth among all elements in the Earth’s crust. However, even today it has not yet lost the air of an exotic and expensive material. The majority of titanium is used as oxide (about 95 %) in the paint industry as whitener or filler material. Not many people are aware of the fact that titanium as oxide is part of everyday life, e.g., in toothpaste, white paint, sun blockers, etc. The main reason behind the late use of titanium as a metal is the difficult and costly reduction of oxide to metal.     

Failure of titanium condenser tube

Failure investigation was carried out on a titanium condenser tube that suffered from a large size perforation. The environment at the shell side is hydrocarbon with low pressure steam, while it is seawater at the tube side. The tube was totally plugged with alkaline scale, consisting of calcium carbonate and calcium sulfate. The investigation revealed that in the initial stages of fouling, the titanium tube suffered from erosion–corrosion damage due to the presence of turbulent flow conditions and suspended solids. On the other hand, when the tube became totally fouled, overheating occurred, leading to growth of the oxide film on the internal tube surface. However, the titanium oxide film cracked due to the pressure exerted by the growing scale inside the tube, leading to thin lip rupture.     

钛与钢及钛复合钢板的焊接性研究(Ⅰ)

分析了钛钢直接熔焊的焊接特点,焊缝的组织和相组成,论述了钛钢熔焊焊缝脆裂的机理,提出了钛钢焊接的途径。     

Titanium diffusion in gold thin films

In the present study, diffusion phenomena in titanium/gold (Ti/Au) thin films occurring at temperatures ranging between 200 and 400 °C are investigated.The motivation is twofold: the first objective is to characterize Ti diffusion into Au layer as an effect of different heat-treatments. The second goal is to prove that the implementation of a thin titanium nitride (TiN) layer between Ti and Au can remarkably reduce Ti diffusion.It is observed that Ti atoms can fully diffuse through polycrystalline Au thin films (260 nm thick) already at temperatures as a low as 250 °C. Starting from secondary ion mass spectroscopy data, the overall diffusion activation energy ΔE = 0.66 eV and the corresponding pre-exponential factor D₀ = 5 × 10^− 11 cm²/s are determined. As for the grain boundary diffusivity, both the activation energy range 0.54 < ΔE_gb < 0.66 eV and the pre-exponential factor s₀D_gb0 = 1.14 × 10^− 8 cm²/s are obtained. Finally, it is observed that the insertion of a thin TiN layer (40 nm) between gold and titanium acts as an effective diffusion barrier up to 400 °C.     

The effect of different methods to add nitrogen to titanium alloys on the properties of titanium nitride clad layers

In this investigation, titanium nitride (TiN) reinforcements are synthesized in situ on the surface of Ti–6Al–4V substrates with gas tungsten arc welding (GTAW) process by different methods to add nitrogen, nitrogen gas or TiN powder, to titanium alloys. The results showed that if nitrogen gas was added to titanium alloys, the TiN phase would be formed. But if TiN powder was added to titanium alloys, TiN + TiN_x dual phases would be presented. The results of the dry sliding wear test revealed that the wear performance of the Ti–6Al–4V alloy specimen coated with TiN or TiN + TiN_x clad layers were much better than that of the pure Ti–6Al–4V alloy specimen. Furthermore, the evolution of the microstructure during cooling was elucidated and the relationship among the wear behavior of the clad layer, microstructures, and microhardness was determined.     

真空钙热还原法制备金属钛粉的研究

在真空炉中(30~40 Pa)1273 K下,将物料放入螺纹密封的石墨坩埚中进行不同时间下的还原反应。本文采用热力学分析及X射线衍射、扫描电子显微镜及能量弥散X射线谱等方法与手段,系统研究了金属钙(Ca)与反应器中的氧气(O2)、氮气(N2)、二氧化钛(TiO2)的反应和还原时间及还原产物的预处理对得到金属钛粉(Ti)的影响。通过热力学研究,在温度低于钙的熔点(1115 K)时,密封容器内的O2与Ca的反应及N2与Ca的反应满足反应发生的热力学条件。当温度达到1273K时,Ca的饱和蒸气压p*≈p系,有利于整个气固反应进行。实验研究表明,在还原反应发生前,反应器内的O2,N2与Ca反应完全。将在1273 K下还原时间为4 h得到的还原产物在酸洗前真空挥发处理还原产物表面大量的Ca时,金属单质Ti再次被氧化成低价氧化物,最终得不到金属Ti粉。将反应时间延长至6 h时,酸洗过滤后得到形状不规则、纯度达到98.64%的Ti粉。     

Effect of Ar gas pressure on growth, structure, and mechanical properties of sputtered Ti, Al, TiAl, and Ti3Al films

Single layers of Ti, Al, TiAl and Ti₃Al were sputter deposited on to 2″ oxidized Si 111 wafers and 7059 Corning Glass to study the effect of film thickness, temperature, and sputtering gas pressure on the mechanical and physical properties. In the present investigation, sputtering gas pressure was varied from 2 mT to 10 mT. The film thickness was varied from 1000 Å to 2 μm. The as-deposited Ti, Al and Ti₃Al films are well crystallized over the entire thickness range. Ti and Ti₃Al films show preferred orientation in the 0002 direction. On the other hand, Al films are random polycrystalline. TiAl films are nearly amorphous for all the thicknesses under consideration. TiAl films show formation of Ti (Al) solid solution phase with increasing Ar pressure. All the materials under consideration, show average film stress to be independent of thickness for thicker films. The nature of the stress (compressive or tensile) depends upon working gas pressure, sputtering power and the target material used. A definite trend is observed in the film stress as a function of Ar gas pressure. Both power and gas pressure influence the energetic bombardment of ions/atoms which in turn influence the average film stress. The nature of the intrinsic stress is explained by the atomic peening model. The Young's modulus of thin films is calculated by using the slope of the stress-temperature plots. The E values seem to change with deposition conditions, however, there is no obvious trend between the sputtering gas pressure and the Young's modulus of these thin films.     

Fabrication of TiO2-based transparent conducting oxide on glass and polyimide substrates

We report on preparation and properties of anatase Nb-doped TiO₂ transparent conducting oxide films on glass and polyimide substrates. Amorphous Ti_0.96Nb_0.04O₂ films were deposited at room temperature by using sputtering, and were then crystallized through annealing under reducing atmosphere. Use of a seed layer substantially improved the crystallinity and resistivity (ρ) of the films. We attained ρ = 9.2 × 10^− 4 Ω cm and transmittance of ~ 70% in the visible region on glass by annealing at 300 °C in vacuum. The minimum ρ of 7.0 × 10^− 4 Ω cm was obtained by 400 °C annealing in pure H₂.