共查询到20条相似文献,搜索用时 31 毫秒
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《Applied Superconductivity, IEEE Transactions on》2008,18(3):1692-1697
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通过Matlab/Simulink软件搭建三相异步电动机模型,对其过载、堵转、短路、定子匝间短路等典型故障进行仿真分析,给出定子电流的变化特征,为以电流为判据的电动机保护装置设计提供理论依据。 相似文献
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Introduction of higher dc system voltage distribution networks, such as the 42-V PowerNet in future passenger vehicles appears to be an unavoidable consequence of meeting the increasing future electrical power demand. Higher voltage electrical distribution networks in vehicles force considerable component and system changes regarding electrical safety and reliability. In the event of an arc fault, e.g., when a wire is pinched or cut, or disengaged terminals under load etc., the resulting current may be significantly lower than the trip current of the protection devices such as fuses and circuit breakers. In these cases either the fault is cleared late (depending on the time/current characteristics of the fuse) or, in some cases the fault may not be cleared at all. A cost effective arc fault detection scheme using input side current shunt was developed, built, and tested with different loads including motor loads to clear both parallel and series arc faults in a 42-V dc network. This paper presents the details of the developed arc fault detection scheme and test results under several fault conditions. 相似文献
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以温州轨道交通S1线灵昆牵引变电所的一次故障跳闸数据入手,深入分析阻抗保护在特殊情况下动作的时限问题,详细介绍阻抗保护动作数据的人工复核、分析方法,为供电系统管理人员分析保护动作数据提供一套新的思路。 相似文献
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A new, smart power switch for industrial, automotive, and computer applications developed in BCD (Bipolar, CMOS, DMOS) technology is described. It consists of an on-chip 70 mΩ power DMOS transistor connected in high side configuration and its driver makes the device virtually indestructible and suitable to drive any kind of load with an output current of 2.5 A. If the load is inductive, an internal voltage clamp allows fast demagnetization down to 55 V below the supply voltage. The device includes novel structures for the driver, the fully integrated charge pump circuit, and its oscillator. These circuits have specifically been designed to reduce electromagnetic interference (EMI) thanks to an accurate control of the output voltage slope and the reduction of the output voltage ripple caused by the charge pump itself. An innovative open load circuit allows the detection of the open load condition with high precision (3 mA ±10% within the temperature range from -25 to 150°C and including process spreads). Furthermore, the device protects the load from ground disconnection and is compatible with the new IEC standards concerning burst and surge tests. The quiescent current has also been reduced to 600 μA. Diagnostics for CPU feedback is externally available from the chip by two dedicated pins when the following fault conditions occur: open load, overload and short circuit to ground or to the supply voltage, overtemperature, and undervoltage supply 相似文献
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Junyang Luo Liang Y.C. byung Jin Cho 《Industrial Electronics, IEEE Transactions on》2000,47(4):744-750
Development of a monolithic power integrated circuit by making the lateral insulated gate bipolar transistor (IGBT) the main switching device is a current topic. The overcurrent protection scheme is usually necessary to be built as part of the function in such a power integrated circuit. The protection circuit requires distinguishing various fault conditions and reacting differently based on the device safe operating area (SOA) limitation. At the same time, the protection circuit should also be relatively concise and suitable for integration. In this paper, a concise circuit suitable for integration and with gate drive capability is proposed to provide the complete function of overcurrent SOA protection for the LIGBT. The operational principle was described in detail and the circuit performance was verified with experimental results from both the discrete circuit and the fabricated LIGBT integrated circuit 相似文献
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以煤矿供电网越级跳闸现象为研究对象,在分析电流纵联差动保护、级联闭锁工作原理和防越级跳闸保护逻辑的基础上,介绍了一种煤矿供电网防越级跳闸保护装置的研制过程。保护装置以32位ARM处理器MB9BF618S为控制核心,可以实时检测供电网输电线路的工作状态,对输电线路故障进行有效的保护。文中主要叙述了保护装置的总体结构,给出了电流/电压输入模块、开关量输入/输出模块和通信模块的设计方案。该保护装置具有结构简单、操作方便、可靠性高等特点,能够满足煤矿供电网防越级跳闸保护的要求,具有较高的应用价值。 相似文献
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详细介绍了霍尔传感器在大功率晶闸管保护电路中的特殊应用,特别是在大功率晶闸管过载保护中解决了快速熔断器一次性保护的缺点。霍尔传感器在短路状态下对大功率晶闸管能够快速保护,是当前大功率晶闸 管保护电路中较先进的保护电路,也是非破坏性保护电路。 相似文献
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Schoepf T.J. Naidu M. Gopalakrishnan S. 《Components and Packaging Technologies, IEEE Transactions on》2005,28(2):319-326
The introduction of system voltages higher than 24 VDC in vehicles, forces considerable component and system changes regarding reliability and electrical safety. In the instance of an arc fault, e.g., when a wire is cut, pinched, chafed or breaks under load, or an arc is drawn between disconnecting terminals, the resulting fault current may be significantly lower than the trip current of common protection devices such as fuses or circuit breakers. In these cases, the fault is cleared late (depending on the time/current characteristics) or, in some cases, not at all. The authors discuss different types of arc faults and introduce approaches to deal with them. 相似文献
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文章介绍了基于Cotex-M3内核的32位高性能微控制器在智能低压断路器控制器的硬件及软件设计中的应用。本智能控制器硬件采用信号变换、波形变换法;软件采用微分法。具体是通过微控制器中集成的PWM输入捕获模式采样变换后的信号来间接计算电流的变化率,大大缩短了过载、短路故障电流的响应时间。智能低压断路器控制器,除实现故障保护功能外,还能对环网供配电系统的现场参数进行实时性监测、区域联网通信等,真正能实现"分布式控制、集中管理",降低现场维护的难度,提高了整个区域环网供配电系统的安全性和可靠性。 相似文献
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《Latin America Transactions, IEEE (Revista IEEE America Latina)》2007,5(5):311-320
This work presents a resonant fault current limiter (FCL) controlled by power semiconductor devices. Initially the operation of two ideal resonant circuit topologies as fault current limiter are discussed. The analysis of these circuits is used to derive an alternative topology to the fault current limiter based on the connection of a series and a parallel resonant circuit. Digital models are implemented in the SimPowerSystem/Matlab simulation package to investigate the performance of the proposed FCL to protect transmission and distribution electric networks against short circuit currents. Transfer functions of the linear limiter models are used to identify the effect of each element of the FCL over its stability and its transient response. The developed analysis will be used to derive modifications in the FCL topology in such a way to improve their dynamic response. 相似文献
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This paper presents a survey of existing gate driving approaches for improving reliability of Insulated Gate Bipolar Transistors (IGBTs). An extensive and various lists of techniques are introduced and discussed, including fast detection, identification and protection against IGBT failures, also considering cost-effective solutions. Gate-driver circuit solutions to improve short-circuit robustness, overload, voltage and current overshoots withstanding capability are first introduced to cope with abnormal conditions severely affecting lifetime expectation. Later, some advanced, state-of-the-art control techniques are discussed to minimize the real-mission-profile stresses in terms of voltage and current stresses to the device, together with, not least, temperature variations. Future challenges and perspectives are finally discussed at the end of the paper. 相似文献
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珠海某区域配电网线路发生故障后引起其他线路同时动作,故障分析难度较大.针对此类较为复杂的连锁故障情况,本文提出了基于配电自动化多层数据的故障分析查找方法,并针对一例该区域配电网连锁故障跳闸情况进行了分析,根据分析结果查找故障点,有效地定位了故障设备,并对单条线路发生故障时造成同段母线上其它线路同时连锁跳闸的现象进行了分析解释.针对此类配电网故障,珠海供电局研发了配网线路一体化故障控制终端设备,该设备可对配网线路故障情况下的电压、电流量进行录波,有效判断故障类型、地点以及保护动作是否为误动,为故障查找定位提供参考. 相似文献
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Latchup-free ESD protection design with complementary substrate-triggered SCR devices 总被引:2,自引:0,他引:2
Ming-Dou Ker Kuo-Chun Hsu 《Solid-State Circuits, IEEE Journal of》2003,38(8):1380-1392
The turn-on mechanism of silicon-controlled rectifier (SCR) devices is essentially a current triggering event. While a current is applied to the base or substrate of an SCR device, it can be quickly triggered on into its latching state. In this paper, latchup-free electrostatic discharge (ESD) protection circuits, which are combined with the substrate-triggered technique and an SCR device, are proposed. A complementary circuit style with the substrate-triggered SCR device is designed to discharge both the pad-to-V/sub SS/ and pad-to-V/sub DD/ ESD stresses. The novel complementary substrate-triggered SCR devices have the advantages of controllable switching voltage, adjustable holding voltage, faster turn-on speed, and compatible to general CMOS process without extra process modification such as the silicide-blocking mask and ESD implantation. The total holding voltage of the substrate-triggered SCR device can be linearly increased by adding the stacked diode string to avoid the transient-induced latchup issue in the ESD protection circuits. The on-chip ESD protection circuits designed with the proposed complementary substrate-triggered SCR devices and stacked diode string for the input/output pad and power pad have been successfully verified in a 0.25-/spl mu/m salicided CMOS process with the human body model (machine model) ESD level of /spl sim/7.25 kV (500 V) in a small layout area. 相似文献
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A fully integrated overcurrent protection system is presented suitable for application in integrated class-D audio power amplifiers. Accurate overcurrent detection is used based on parallel measurement of the voltage drop across the DMOS power transistors. A logic circuit enables continuous current limiting during overload situations. Actual short circuits can be distinguished from load impedance minima using a simple short-circuit discrimination method. 相似文献
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在阐述传统电流速断保护和自适应电流速断保护构成原理及特点的基础上,对自适应式电流速断保护在单端电源条件下发生在正、反方向故障时的动作性能进行了分析。结果表明,自适应电流速断保护性能比传统电流保护具有明显的优越性及适用条件。 相似文献