He-Ne激光诱变选育高产白藜芦醇细胞系

以葡萄皮脱分化组织为最初材料,用根癌农杆菌702菌株感染,通过纸电泳证明胭脂碱合成醇基因的存在,并在无激素培养基上培养5～6代以上,将此组织(MS)作为本次实验的研究对象.用He-Ne激光辐照,对MS进行诱变处理,通过继代选育,得到优良细胞系T₁₂,其特点是:生长迅速,生长周期比对照组(CK)缩短10～15天;生长曲线的稳定期明显延长,白藜芦醇平均产量比MS组提高40%.通过稳定性实验证明T₁₂组遗传性状是可靠的.     

紫外、氦氖激光等复合诱变产果胶酶细菌ZH1的研究

ZH₁菌株是从自然界分离筛选而来的,该菌株产果胶酶的最适pH为7.0;最适温度33℃;培养36h达产酶高峰,酶活力为73.5μ/mL,将ZH₁作为出发菌株,经紫外线诱变、硫酸二乙酯诱变,亚硝基胍和紫外线复合诱变及氦氖激光等多次反复诱变,选育得到一株产果胶酶性稳定且酶活明显提高的突变株ZHg,其酶活为301m/mL,比出发菌株ZH₁产果胶酶能力提高3.1倍.     

苯基叠氮在光吸收激发态上的结构动力学-共振拉曼和量子力学计算研究

采用共振拉曼光谱学和完全活化空间自洽场方法研究了苯基叠氮被激发到S₂(A')、S₃(A')和S₆(A')光吸收态后的结构动力学. 基于傅立叶变换拉曼、傅立叶变换红外、紫外、密度泛函计算和简正模式分析,指认了紫外吸收光谱和振动光谱. 获得了环己烷、乙腈和甲醇溶剂中273.9、252.7、245.9、228.7、223.1和208.8 nm等不同激发波长下的A、B和C带共振拉曼光谱,以探测Franck-Condon区域的结构动力学. CASSCF计算获得了单重电子激发态能量最低点和势能面交叉点的电子激发能和优化几何结构. 结果表明,苯基叠氮在S₂(A')、S₃(A')和S₆(A')态上的激发态结构动力学各不相同. 与Kasha规则相符,S₂S₁(1)和S₂S₁(2)势能面交叉点在S₂(A')激发态衰变动力学和N7=N8键解离中扮演着重要角色. 提出了两条主要衰减通道：S_2,min→S₀辐射通道和S_2,FC(ππ^*)→S₂(ππ^*)/S₁(nπ^*)→S₁(nπ^*)非辐射通道.     

He-Ne激光选育高木质素降解率的白腐真菌Lx

用He-Ne激光对一株木质素降解活性较高的白腐真菌L₁进行选育.将该菌的菌丝体和原生质体多次照射诱变,结果得出:在波长632.5nm,用功率为6mW和7mW照射该菌的菌丝体,选育出的菌株L₆和L₇木质素降解率可达38.1%和39.88%,比出发菌株L₁提高了33%和39%.用功率9mW的He-Ne激光辐照原生质体,照射20min时,原生质体致死率已达100%.在照射时间为10min时,选育出一株木质素降解率达43.03%的菌株L_x,比出发菌株L₁提高了50%.同工酶分析显示该菌株发生了稳定的遗传突变.     

Magnetic entropy change and large refrigerant capacity of Ce6i2Si3-type GdCoSiGe compound

Magnetic entropy change (Δ S_M) and refrigerant capacity (RC) of Ce₆Ni₂Si₃-type Gd₆Co_1.67Si_2.5Ge_0.5 compounds have been investigated. The Gd₆Co_1.67Si_2.5Ge_0.5 undergoes a reversible second-order phase transition at the Curie temperature T_C = 296 K. The high saturation magnetization leads to a large Δ S_M and the maximal value of Δ S_M is found to be 5.9 J/kg,cdot,K around T_C for a field change of 0--5 T. A broad distribution of the Δ S_M peak is observed and the full width at half maximum of the Δ S_M peak is about 101 K under a magnetic field of 5 T. The large RC is found around T_C and its value is 424 J/kg.     

供电子能力对一类热活化延迟荧光分子反系间窜越速率的影响

本文基于第一性原理,研究了八个热活化延迟荧光分子的性质,揭示了基团供电子能力对分子几何构型、跃迁属性以及反系间窜越过程的影响.研究结果表明,对于咔唑和氧杂蒽酮组成的一类分子的最低三重激发态（T₁）而言,供体基团的二苯胺取代,几乎不会改变供体和受体之间的夹角,但却可以减小供体和受体间的键长.基团供电子能力越强,最高占据分子轨道（HOMO）和最低未占据分子轨道（LUMO）间的轨道重叠度越小,最低单重激发态S₁和T₁之间的能差（△E_S1-T1）越小.此外,供体基团上增加二苯胺能够增加HOMO的离域性,而且能够进一步地减小△E_S1-T1.通过计算S₁和T₁之间的旋轨耦合系数（H_so）,发现（<S₁|Ĥ_so|T₁>²）/（△E_S1-T1²）数值越大,反系间窜越速率越大.计算表明八个分子都可能是高效的热活化延迟荧光分子.本文提出了一条高效热活化延迟荧光分子的设计策略,即分离HOMO和LUMO的分布和增加HOMO的离域性能够有效地减小S₁-T₁能差.     

碱金属Li,Na,K,Rb,Cs,Fr的ns2S1/2,np2P1/2,3/2, nd2D3/2,5/2 和nf2F5/2,7/2 里德伯能级理论研究

本文在多通道量子数亏损理论(MQDT)框架下,利用相对论多通道理论(RMCT),分别在冻结实近似、 考虑Δl=-1的偶极极化效应、Δl=+1的偶极极化效应、Δl=± 1的偶极极化效应、伸缩模效应以及同时考虑偶极极化效应和伸缩模效应等不同层次近似下,系统地计算了碱金属Li, Na, K, Rb, Cs和Fr七个里德伯系列的能级,即ns²S_1/2, np²P_1/2, np²P_3/2, nd²D_3/2, nd²D_5/2, nf²F_5/2 和nf²F_7/2.计算结果表明,电子关联效应对碱金属原子的里德伯能级的影响很大.总的来说,偶极极化效应比伸缩模效应重要,而在偶极极化效应中, Δl = + 1的偶极极化效应比Δl = - 1的偶极极化效应重要.但对于Na的ns²S_1/2,(nd²D_3/2,nd²D_5/2)里德伯系列的能级,和Li的(np²P_1/2,np²P_3/2)里德伯系列的能级,是伸缩模效应比较重要.     

开放的V型三能级系统中原子注入和退出速率对位相相关的无反转激光增益和强度空间演化的调制作用

利用数值计算结果, 研究了具有自发辐射诱导相干的开放V 型三能级原子系统中的传播效应. 研究表明: 改变探测场和驱动场之间的相对位相对无反转激光(LWI)增益和 强度随传播距离的变化即空间演化具有重要的影响; 而原子的注入速率比(S)和退出速率(r₀)的改变将对位相相关的LWI增益和强度的空间演化产生明显的调制作用. 在S(r₀)的一定取值范围内, S(r₀)的值越大, LWI增益和强度越大且强度达到极大值需要的传播距离越长; 相应封闭系统中LWI增益和强度的最大值及能产生增益的传播距离都小于开放系统. Doppler效应对LWI增益和强度的空间演化也具有明显的影响, 存在Doppler效应时得到的LWI增益和强度明显小于无Doppler效应时的值.     

半导体材料AAl2C4(A=Zn, Cd, Hg; C=S, Se)的电子结构和光学性质

采用基于密度泛函理论的第一性原理方法, 对具有缺陷型黄铜矿结构的半导体材料A^ⅡAl₂C₄^Ⅵ(A=Zn, Cd, Hg; C =S, Se)的构型和电子结构进行研究, 并系统考察了各晶体的光学性质. 对于线性光学性质, 五种晶体在红外区和部分可见光区具有良好的透光性能, 其中HgAl₂S₄和HgAl₂Se₄晶体具有适中的双折射率. 在非线性光学性质方面, 该类晶体倍频效应较强, 理论预测得到的二阶静态倍频系数均较大(>20 pm/V). 体系的倍频效应主要来源于价带顶附近以S/Se 价p轨道为主要成分的能带向含有较多Al/Hg 价p成分的空带之间的跃迁. 通过与已商业化的AgGaC₂晶体光学性质的对比, 结果表明HgAl₂S₄和HgAl₂Se₄是一类性能优良的红外非线性光学晶体材料.     

Er3+：GdVO4中Er3+离子的光谱参数计算和晶场中能级分裂的讨论

对Er³⁺：GdVO₄样品的光谱参数以及Er³⁺在晶场中能级的分裂情况进行了研究. 首先对样品进行了吸收光谱的测量，接着用Judd-Ofelt理论拟合出了Er³⁺在GdVO₄晶体中的强度参量Ω_t，并由此计算了跃迁的振子强度、自发辐射跃迁速率、荧光分支比和积分发射截面. 通过计算结果可以发现有较多能级之间的跃迁都有大于10^-6的振子强度和大于10^-18cm的积分发射截面，并且具有较高的荧光分支比，特别是²H_11/2→⁴I_15/2，⁴S_3/2→⁴I_15/2，⁴F_9/2→⁴I_15/2和⁴I_13/2→⁴I_15/2等几个强发光能级除了具有较大的振子强度和积分发射截面外还有很好的应用前景，因此也更加值得关注. 最后还利用群论讨论了Er³⁺离子在GdVO₄晶场中各能级的分裂情况并对各Stark子能级的J_z混杂情况进行了分析.     

Photoinduced transformations in (As1–xBix)2S3 glass observed by Raman spectroscopy

Raman spectra of (As_1–xBi_x)₂S₃ glass samples with x ≤ 0.2 measured at the excitation with above-bandgap (532 nm) laser light at a relatively low power density (P_exc = 4 kW/cm²) clearly confirm the amorphous character, thereby markedly extending the known compositional interval of existence of the (As_1–xBi_x)₂S₃ glass previously known (x ≤ 0.06). Spectra measured at an increased P_exc (40 kW/cm²) reveal a photostructural transformation in the illuminated area of the glass leading to an additional contribution of Bi–S bonds as well as to an increasing number of cage-type As₄S₄ units with homopolar As–As bonds. A number of new features in a broad range up to about 1,000 cm⁻¹, which emerge in the Raman spectra of the (As_1–xBi_x)₂S₃ glasses with high (x ≥ 0.14) Bi content and increase in intensity with the exposure time, are related to a photochemical transformation, namely, oxidation of arsenic and sulphur on the (As_1–xBi_x)₂S₃ glass surface with formation of units containing arsenate AsO₄³⁻ and sulphate SO₄²⁻ ions. These processes are irreversible and occur only in the presence of a sufficient amount of bismuth.     

Intrinsic nanoscale phase separation of bulk As2S3 glass

Raman scattering on bulk As _x S_{1? x} glasses shows that vibrational modes of As₄S₄ monomer first appear near x = 0.38, and their concentration increases precipitously with increasing x, suggesting that the stoichiometric glass (x = 0.40) is intrinsically phase separated into small As-rich (As₄S₄) and large S-rich clusters. Support for the Raman-active vibrational modes of the orpiment-like and realgar-like nanophases is provided by ab-initio density functional theory calculations on appropriate clusters. Nanoscale phase separation provides a basis for understanding the global maximum in the glass transition temperature T _g near x = 0.40, and the departure from Arrhenius temperature activation of As₂S₃ melt viscosities.     

Determination of the Elemental Composition of Chalcogenide Powders by the X‐Ray Fluorescence Method

A procedure of xray spectral fluorescence analysis of the elemental composition of As _x S_100–x chalcogenide powder samples is developed and its metrological characteristics are established. In determining the content of the components in an As₅₀S₅₀ sample, the relative standard deviation was 0.0030 for As and 0.0035 for S. The results of the xray spectral fluorescence analysis are in good agreement with the data of a gravimetric method.     

Effect of thallium on magnetic susceptibility of arsenic sulphides

Magnetic susceptibility was studied of samples of Tl_2xAs₂S_3+x and Tl_2xAs₂S₄ series where 0x1 differing in abundance of bonds in structural units. Absolute value of specific magnetic susceptibility decreases with increasing thallium content. Separation of susceptibility in dia- and paramagnetic parts made it possible to refer to the correlation of absorption edge position and paramagnetic susceptibility component.     

硫系非晶半导体薄膜中的超快光 Kerr效应

利用飞秒激光超外差光Kerr(OHD-OKE)技术研究了As₂S₃, As₂Se₃, GeS₂, GeSe₂, Ge₂₀As₂₅S₅₅, Ge₂₀As₂₅Se₅₅, Ge₁₀As₄₀S_{20关键词： 全光开关 硫系非晶半导体薄膜 飞秒激光超外差光Kerr(OHD-OKE) 三阶非线性}     

Shift in elastic phase boundaries due to nanoscale phase separation in network glasses: the case of Ge x As x S1 − 2 x

Binary and ternary sulphide glasses, in contrast to their selenium counterparts, are usually not fully polymerized. This circumstance provides a means to examine the role of nanoscale phase separation effects on global elastic phase diagrams of disordered networks. In bulk Ge _x As _x S_{1 ? ?2 x} glasses, the non-reversing enthalpy (ΔH _nr) near T _g is found to display a global minimum (～0) in the 0.11<x<0.15 range, the reversibility window. Furthermore, the ΔH _nr term is found to age for glass compositions below (x<0.11) and above (x>0.15) the window, but not in the window. In analogy to corresponding selenides, glass compositions in the window represent the intermediate phase, those at x<0.11 are floppy, and those at x>0.15 stressed-rigid. Raman scattering shows floppy and stressed-rigid networks to consist of S₈, and As₄S₄ and As₄S₃ monomers, respectively, aspects of structure that contribute to a narrowing of the intermediate phase and to suppression of the ΔH _nr term in S-rich glasses qualitatively in relation to corresponding Se-rich glasses that are fully polymerized.     

Preparation of (As x Co3−x O4)(x=0–0.024) nanoparticles by rheological phase reaction method

Nanoparticles of a series of arsenic–cobalt mixed valency spinel oxides of theoretical formula As _x Co_3?x O₄, (x=0, 0.005, 0.01, 0.015, 0.024) have been successfully prepared by the rheological phase reaction and the pyrolysis method. The products were characterized by X-ray powder diffraction, scanning electron microscope, thermogravimetric analysis and simultaneous differential thermal analysis. Calcination of the precursor at 500 ^°C resulted in the formation of arsenic-doped cobalt oxide nanoparticles of 48 nm in crystal size. The effect of the calcination temperature on the crystal size of arsenic-doped Co₃O₄ was discussed.     

用高压显微光谱系统研究非晶态As2S3的光学折射率随流体静压力变化的规律

用金刚石对顶砧高压显微光谱系统在高达66kbar的流体静压力和光谱波段为400—900nm范围内,用透射光干涉谱法测量了非晶态As₂S₃(a-As₂S₃)的光学折射率n与压力p以及波长λ的变化关系。a-As₂S₃的折射率对压力极为敏感,在波长为650nm,压力从1bar变到66kbar时,它增加35％。在计算机上用最小二乘法对实验点进行拟合的结果得到:对某一波长λ来说,遵循n(P)=n(0)+Ap+Bp²的非线性关系。其中n(p)和n(0)是p压和常压下的折射率,A和B是与波长有关的系数,文中给出了A和B的具体参数。这个关系与Weinstein和Galkiewicz等人公布的n(p)和p之间遵循线性关系不同。 关键词：     

Spin states of Ni3+ ions in PrSrAl1−x Ni x O4 ceramics

Solid solutions PrSrAl_1−x Ni _x O₄ have been synthesized and studied by electron paramagnetic resonance (EPR). It is shown that atx≤0.2 the Ni³⁺ ions may be present both in the high- and low-spin states. Asx increases, the part of high-spin centers increases as well. Models of the paramagnetic centers accounting for micro-heterogeneous structure of these ceramics are proposed. The observed features of the temperature dependence of the EPR signals are explained by the interaction of the nickel ions with fast-relaxing Pr³⁺ ions.     

Dopant‐free back contact silicon heterojunction solar cells employing transition metal oxide emitters

The present study investigates the electrical properties of transition metal oxide (TMO) emitters in dopant‐free n‐Si back contact solar cells by comparing the properties of solar cells employing three TMOs (WO_x, MoO_x and V₂O_x) with varying electrical properties acting as p‐type contacts. The TMOs are found to induce large band bending in n‐Si, which reduces the injection level dependent interfacial recombination speed S_eff and contact resistivity ρ_c. Among the TMO/n‐Si contacts considered, the V₂O_x/n‐Si contact achieves the lowest S_eff of 138 cm/s and ρ_c of 0.034 Ω cm², providing the significant advantages over heavily doped a‐Si:H(p)/n‐Si contacts. The best device performance was achieved by the V₂O_x/n‐Si solar cell, demonstrating an efficiency of 16.59% and an open‐circuit voltage of 610 mV relative to solar cells based on MoO_x/n‐Si (15.09%, 594 mV) and WO_x/n‐Si (12.44%, 539 mV). Furthermore, the present work is the first to employ WO_x, V₂O_x and Cs₂CO₃ in back contact solar cells. The fabrication process employed offers great potential for the mass production of back contact solar cells owing to simple, metal mask patterning with high alignment quality and dopant‐free steps conducted at a lower temperature.