基于忆阻器的Simulink模型及其特性分析

忆阻器是纳米级尺寸、非易失性的两端无源性器件,在数据存储、图像处理和模拟神经网络突触等方面有很大的优势。为了研究忆阻器的特性,在理想的忆阻器模型的基础下,搭建了2种不同窗函数的忆阻器Simulink模型。通过Matlab仿真研究了不同的输入激励以及模型的变化对忆阻器的影响,获得了关于忆阻器的许多新特性和一些重要的结果,并与已知的忆容器和忆感器的输入输出特性作了对比,说明忆阻器与忆容器、忆感器具有相似的特性。仿真结果表明忆阻器在应用方面的具有很大的潜力。     

溶胶凝胶法制备TiO_2薄膜忆阻器

忆阻器被认为是除电阻、电容、电感元件之外的第四个基本的无源元件,由于它具有非易失记忆在众多领域里有广泛的应用前景。采用溶胶凝胶法在玻璃衬底上制备出TiO2薄膜,用探针法和半导体参数分析仪表征它的I-V特性,用原子力显微镜表征它的表面形貌,用台阶仪测量它的厚度。结果表明在两个电极之间的TiO2薄膜具有忆阻器特性,阈值电压约为0.8V,两态电阻分别是53?和5?。     

忆阻器特性及其在电路设计中的应用

介绍了忆阻器的起源与发展历程,讨论了忆阻器的端口特性及其在电路设计中的应用,并将忆阻器的端口特性与电阻、电感、电容元件作比较;其次,讨论了目前比较常见的四种忆阻器的数学模型及其特点;最后,根据忆阻器具有的非线性特性和特殊的记忆功能,分析了其构成混沌电路、滤波电路及波形发生电路时,电路所具有的特殊性能。     

忆阻数字逻辑电路设计

该文简要概述了忆阻器理论的提出、应用现状及其在电子技术领域发展的现状,介绍了忆阻器在数字逻辑电路设计中的重要意义,并结合惠普(HP)忆阻器的二值特性及其电路特性,对忆阻器在数字逻辑电路设计中的发展、趋势及可应用前景进行了综述,可为忆阻器在数字逻辑电路中的后续研究及相关应用提供一定的参考。     

一种分数阶忆阻器的Verilog-A模型及应用

近年来,科研人员为研究忆阻器的电气特性及其在电路中的应用,建立了多种整数阶忆阻器的Verilog-A模型,但分数阶忆阻器的Verilog-A模型还未见报道。文章提出了一种分数阶忆阻器的Verilog-A模型,对其相关特性进行了分析,总结了参数对忆阻器电气特性影响的规律,并将此模型应用于脉冲宽度调制(PWM)电路中,通过改变分数阶阶次来调整PWM电路的占空比。实验结果证明了分数阶忆阻器Verilog-A模型的正确性和实用性。     

基于荷控忆阻器的四阶混沌电路

近年来,基于亿阻器的混沌电路受到国内外学者的广泛关注.然而现阶段的研究,大都采用通过磁控忆阻器和负电导并联构成的有源忆阻器替代蔡氏电路中蔡氏二极管的方法.而采用荷控忆阻器的混沌电路大都同时使用荷控忆阻器与磁控忆阻器构成的五阶双忆阻器混沌电路.该文在蔡氏电路的基础上,采用荷控忆阻器与电感串联的形式构造了一个新的四阶忆阻混沌电路,并提出改进的忆阻器非线性特性曲线,通过数值仿真的方法进行了验证.最后,对这个新的四阶忆阻混沌电路进行动力学特性分析,主要通过李雅普诺夫指数和吸引子在相平面的投影.     

忆阻器网络等效分析电路及其特性研究

随着忆阻器理论研究的不断深入和圆满实现,加上其独特的物理性质,其应用前景将非常乐观。该文提出了忆阻器有P型和N型两种,对其物理性质进行了分析研究,得出了它们具有对偶特征。基于此,忆阻器间可以通过适当的连接和参数选择,对外呈现出线性特性,而各自仍具备忆阻器的固有属性。同时,给出了忆阻器及其串并联的一种等效分析电路拓扑结构,仿真结果表明,该方法有效、结论正确,从而为忆阻器的理论和应用研究,特别是忆阻器网路的构建开辟了新途径。     

交叉杆结构忆阻器件的研究进展

忆阻器被认为是除电容器、电感器、电阻器之外的第四种无源器件,具有器件结构简单、操作速度快、功耗小等优点,是具有电阻记忆特性的非易失性的电阻元件。而交叉杆结构忆阻器件作为忆阻器的一种结构,由于其较之其他结构的忆阻器具有结构简单、集成度高、容错性和并行性优良等特性,受到了外界广泛的关注及研究。文章综述了近年来交叉杆忆阻器的兴起和发展现状,阐述了以交叉杆结构为基础的各类忆阻器的制备及应用。     

基于阈值电压的忆阻器模型研究

为了使忆阻器模型更加接近实际器件,提高其电学特性仿真的准确性。文章在惠普实验室提出的忆阻器物理模型的基础上,在Matlab中对忆阻器进行建模,并对忆阻器的模型根据实际器件具有的电压阈值特性进行了改进,仿真结果表明基于改进电压阈值的模型所呈现的电学特性更加准确地反映了忆阻器的输入输出特性。     

忆阻器在人工神经网络方面的研究应用

忆阻器是一种具有类似突触特性、记忆特性的新型非线性器件,它具有无源性,低耗能,记忆特性以及纳米尺度等特点,因此常用于构建结构简单、权值灵活可调、集成度高的人工神经网络。而人工神经网络是现代信息处理和智能控制领域的一个重要方法,将忆阻器应用于人工神经网络方面将会加速实现人工智能时代的到来。此方面的研究有许多,比如忆阻器实现神经元电路的研究,忆阻器的智能PID控制器等,本文列举概括了忆阻器在人工神经网络方面的研究应用。     

Comparison of the Output Parameters of the Memristor-based Op-amp Model and the Traditional Op-amp Model

Journal of Electronic Testing - A new operational amplifier (op-amp) model has been proposed using a memristor emulator based on the linear TiO2 drift model. Simulation studies and numerical...     

Memristor emulator with tunable characteristic and its experimental results

In this study, operational transconductance amplifier (OTA) based simple and practical TiO₂ memristor emulator is presented. The proposed memristor emulator employs a multi-outputs OTA, an analog multiplier and a resistor and a capacitor. The parameters of the proposed memristor emulator can be tuned electronically by changing the biasing current of the OTA. Change of the transconductance gain of the OTA provides an advantage: “externally controllable memristor”. Non-volatile resistive switching characteristics and an application of this proposed memristor are given. Also, the memristor emulator is implemented using the commonly available OPA860. The effectiveness of the proposed memristor emulator is verified by the experimental results, which show good agreement with the theoretical and simulation results.     

Comparative analysis of memristor models and memories design

The advent of the memristor breaks the scaling limitations of MOS technology and prevails over emerging semiconductor devices.In this paper,various memristor models including behaviour,spice,and experimental are investigated and compared with the memristor's characteristic equations and fingerprints.It has brought to light that most memristor models need a window function to resolve boundary conditions.Various challenges of availed window functions are discussed with matlab's simulated results.Biolek's window is a most acceptable window function for the memristor,since it limits boundaries growth as well as sticking of states at boundaries.Simmons tunnel model of a memristor is the most accepted model of a memristor till now.The memristor is exploited very frequently in memory designing and became a prominent candidate for futuristic memories.Here,several memory structures utilizing the memristor are discussed.It is seen that a memristor-transistor hybrid memory cell has fast read/write and low power operations.Whereas,a 1T1R structure provides very simple,nanoscale,and non-volatile memory that has capabilities to replace conventional Flash memories.Moreover,the memristor is frequently used in SRAM cell structures to make them have non-volatile memory.This paper contributes various aspects and recent developments in memristor based circuits,which can enhance the ongoing requirements of modem designing criterion.     

忆阻器的建模及高精度忆阻值读写电路的设计

使用现有电路元件设计了一种荷控忆阻器的理论模型。由于把忆阻器应用于存储器、神经网络、信号处理等领域均涉及到忆阻器的读写操作,并且目前忆阻器大多是数字量0和1的操作,没有模拟量的操作。所以利用了荷控忆阻器的电荷特性,给出一种描述如何读取忆阻器的模拟忆阻值的方法。利用了荷控忆阻器的频率特性,设计了一个反馈式忆阻值写电路,该电路能够在忆阻器的阻态范围内进行任意模拟量的写操作。仿真结果验证了设计的正确性。     

Floating memristor emulator with subthreshold region

Memristor which is recently discovered and known as missing circuit element is an important for memory, nonlinear and neuromorphic circuit designs. Modeling of memristor devices is essential for memristor based circuit design. In this paper, compact memristor which has high memristance value is introduced. The simulations are completed in LTspice program and expected results are obtained applying sinusoidal. Two memristor emulators are connected in serial, in parallel and promising results presented. The simulation results of applying positive pulse train to both of terminals of memristor are showed. The simulations of the proposed emulator showed the expected memristor characteristics.     

非对称忆阻诱导的吸引子非对称演化与机理研究

紧磁滞回线是评测物理器件或数学模型是否为忆阻的关键依据,其对称特性也是忆阻的重要特征之一。该文提出一种有源非对称忆阻二极管桥模拟器,它通过改变二极管桥中并联二极管的数量可实现紧磁滞回线非对称度的控制。首先,验证了该非对称忆阻模拟器的指纹特征,并着重探讨了激励频率和对称度控制参数对紧磁滞回线非对称度的影响。进一步地,将该非对称忆阻模拟器耦合到Sallen-Key高通滤波器,构建了一种无感忆阻蔡氏电路;建立了相应的无量纲系统,并揭示了系统吸引子的非对称演化现象。结合平衡点稳定性分析、分岔分析和多吸引子状态初值空间分布,阐明了吸引子非对称演化的产生机理。结果表明,受非对称忆阻的影响,无感忆阻蔡氏电路的两个不稳定鞍焦点失去平衡,导致了非对称共存分岔、多稳定模态等行为的产生。最后,由硬件电路实验验证了理论分析与数值仿真的正确性。     

A hyperchaotic memristor system with exponential and discontinuous memductance function

Most of the memristor chaotic and hyperchaotic oscillators discussed in the literatures use the cubic flux controlled memristor model. The drawback of this model is that in spite of knowing the terminal voltage polarity, one cannot easily determine whether the memductance increase or decrease. Hence we propose new memristor hyperchaotic oscillators derived using exponential memductance and discontinuous memductance functions. Dynamical analysis of the proposed oscillators are conducted using equilibrium points, stability of equilibrium, Eigen values and Lyapunov exponents. Bifurcation plots are derived to understand the parameter dependence of the proposed oscillators. Multistability and coexisting attractors are exhibited by these memristor oscillators.     

A Flexible Solution-Processed Memristor

A rewriteable low-power operation nonvolatile physically flexible memristor device is demonstrated. The active component of the device is inexpensively fabricated at room temperature by spinning a $hbox{TiO}_{2}$ sol gel on a commercially available polymer sheet. The device exhibits memory behavior consistent with a memristor, demonstrates an on/off ratio greater than 10 000 : 1, is nonvolatile for over $hbox{1.2} times hbox{10}^{6} hbox{s}$, requires less than 10 V, and is still operational after being physically flexed more than 4000 times.