Passively Q-Switched Nd：KLuW Laser with Semiconductor Saturable Absorber

We demonstrate a passively Q-switched Nd：KLu W laser with a semiconductor sat urable absorber mirror （SESAM） at wavelength 1070 nm. At a pump power of 1.3 W, the pulse width is measured to be about 17ns with repetition rate of lOkHz and with the average output power of 260roW. To our knowledge, this is the first demonstration of Nd：KLuW used for passively Q-switched laser with an SESAM.     

Diode-Pumped Self-Starting Mode-Locked Nd：YVO4 Laser with Semiconductor Saturable Absorber Output Coupler

By using a semiconductor saturable-absorber output coupler as a mode-locking device, we experimentally realized the operation of a diode-pumped passively mode-locked Nd:YVO4 laser. Stable laser pulses with duration of 2.3ps were generated at the output power of about 1W. With increasing the pump power to 9 W, the maximum mode-locked power of 1.7 W was obtained, which corresponds to a slope conversion efficiency of 44 % and opticalto-optical conversion efficiency of 19%.     

Diode-Pumped Quasi-Three-Level Passively Q-Switched Nd：GGG Laser with a Codoped Nd,Cr：YAG Saturable Absorber

We demonstrate the first quasi-three-level passively Q-switched Nd：GGG laser at 937nm using a Nd, Cr：YAG crystal as the saturable absorber. The dependences of the average output power, the repetition rate and the pulse width on the incident pump power are obtained. A maximum average output power of 1.18 W with repetition rate of 35kHz and pulse width of 45ns is achieved at an incident pump power of 18.3 W. The corresponding optical-to-optical and slope efficiencies are 6% and 10%, respectively.     

Diode-Pumped Passively Q-Switched Yb：YAG Microchip Laser with a GaAs as Saturable Absorber

A passively Q-switched Yb: YAG microchip laser has been constructed by using a doped GaAs as the saturable absorber as well as the output coupler. At 13.5 W of pump power the device produces high-quality 3.4μJ 52ns pulses at 1030nm with a pulse repetition rate of 7.8 kHz in a TEM00-mode.     

Diode-Pumped Passive Q-Switched 946 nm Nd：YAG Laser with a GaAs Saturable Absorber

We report, for the first time to our knowledge, a diode-pumped passive Q-switched 946nm Nd：YAG laser by using a GaAs as saturable absorber. The maximum average output power is 1.24 W at an incident pump power of 15 W, corresponding to a slope efficiency of 10%. Laser pulses with pulse duration of 70ns and repetition rate of 330 kHz are generated.     

A Passively Mode－Locked Diode－End－Pumped Nd：YAG Laser with a Semiconductor Saturable Absorber Mirror Grown by Metal Organic Chemical Vapour Deposition

We report the experimentM results of a mode-locked diode-end-pumped Nd:YAG laser with a semiconductorsaturable absorber mirror (SESAM) from which we achieved a lOps pulse duration at 150MHz repetition rate.The SESAM was grown by metal organic chemical vapour deposition at low temperature. The recovery time wasmeasured to be 0.5 ps, indicating the potential pulse compression to sub-picoseconds.     

A Compact Diode-Pumped Injection Seeded Nd：YAG Laser with Resonance-Detection Technique

A diode pumped injection seeded single-longit udinal-mode （SLM） Nd： YA G laser is achieved by using the resonancedetection technique in Q-switching operation. The pulsed oscillator laser uses a folded cavity to achieve compact construction. This system operates at 100 Hz and provides over 20 m J/pulse of single-frequency 1064 nm output. The M2 values of horizontal and vertical axes are 1.58 and 1.41, respectively. The probability of putting out single-longitudinal-mode pulses is 100%. The 355 nm laser output produced by frequency tripling has a linewidth less than 200 MHz. The laser can run over eight hours continually without, mode hopping     

Passively Q-Switched Tm,Ho：YVO4 Laser with Cr：ZnS Saturable Absorber at 2 μm

A stable diode-pumped passively Q-switched Tm,Ho：YVO4 laser with Cr：ZnS saturable absorber is reported. The shortest pulse duration of -500 ns with the central wavelength of 2041 nm is obtained at the pump power of 7.4 W, corresponding to the pulse energy of 3.5 μd at repetition rate of 65 kHz.     

A Bragg-Mirror-Based Semiconductor Saturable Absorption Mirror at 800 nm with Low Temperature and Surface State Hybrid Absorber

We present a novel 800-nm Bragg-mirror-based semiconductor saturable absorption mirror with low temperature and surface state hybrid absorber, with which we can realize the passive soliton mode locking of a Ti:sapphire laser pumped by 532-nm green laser which produces pulses as short as 37 fs. The reflection bandwidth of the mirror is 3Ohm and the pulse frequency is 107MHz. The average output power is 1.1 W at the pump power of 7.6W.     

13-W picosecond Nd:GdVO4 regenerative amplifier with 200-kHz repetition rate

We report a diode-pumped picosecond Nd:GdVO₄ regenerative amplifier system designed for micro-machining applications. Nd:GdVO₄ was chosen as gain material because it offers – in comparison to the commonly used Nd:YVO₄ – improved thermal properties and a larger gain bandwidth. At the maximum repetition rate of 200 kHz, the system generated 6.8-ps-long pulses with a pulse energy of 65 μJ, which corresponds to an average output power of 13 W. At 100 kHz, the pulse energy increased to 123 μJ, whereas the average power of 12.3 W remained almost identical. The broadening of the pulses due to gain narrowing was investigated in dependence on the number of cavity round trips and on the repetition rate. At 200 kHz, the injected 5.3-ps-long pulses broadened slightly to about 6.8 ps.     

Femtosecond thin-disk Yb:KYW regenerative amplifier

We report a compact thin-disk Yb:KYW regenerative amplifier system. Two different concepts are investigated to obtain either subpicosecond pulses with up to 160 μJ or a pulse energy of 20 μJ with a pulse width of about 300 fs. The first concept uses intra-cavity group-velocity dispersion compensation with Gires–Tournois interferometer mirrors to avoid pulse stretching during amplification. The onset of nonlinear effects in this concept inhibits the generation of shorter pulse durations at this energy level. Shorter pulses can be achieved with the second concept, which is based on dispersive pulse stretching during amplification and uses pulse compression after amplification with a grating compressor. Repetition rates up to 45 kHz are demonstrated.This revised version was published online in May 2005. The Article Category was removed.This revised version was published online in August 2005 with a corrected cover date.     

Selfstarting femtosecond operation and transient dynamics of a diode-endpumped Cr:LiSGaF laser with a semiconductor saturable absorber mirror

Received: 16 July 1997/Revised version: 24 September 1997     

Reflective carbon nanotube as the saturable absorber for mode-locked 1064 nm laser

With a reflective single-walled carbon nanotube as the saturable absorber, a laser diode-pumped passively mode-locked Nd:YVO₄ laser at 1064 nm was realized for the first time. The pulse duration of 12 ps was produced with a repetition rate of 83.7 MHz. The peak power and the single pulse energy of the mode-locking laser were 1.28 kW and 15.4 nJ, respectively.     

SOA-based actively mode-locked fiber ring laser by forward injecting an external pulse train

An actively mode-locked fiber ring laser based on cross-gain modulation (XGM) in a semiconductor optical amplifier (SOA) is demonstrated to operate stably with a simple configuration. By forward injecting an easily-generated external pulse train, the mode-locked fiber laser can generate an optical-pulse sequence with pulsewidth about 6 ps and average output power about 7.9 mW. The output pulses show an ultra-low RMS jitter about 70.7 fs measured by a RF spectrum analyzer. The use of the proposed forward-injection configuration can realize the repetition-rate tunability from 1 to 15 GHz for the generated optical-pulse sequences. By employing a wavelength-tunable optical band-pass filter in the laser cavity, the operation wavelength of the designed SOA-based actively mode-locked fiber laser can be tuned continuously in a wide span between 1528 and 1565 nm. The parameters of external-injection optical pulses are studied experimentally to optimize the mode-locked fiber laser.     

Additive pulse mode-locked Nd: YAG laser

Additive pulse mode locking applied to lamppumped Nd: YAG lasers results in an attractive source of picosecond pulses at 1.06 m or 1.32 m with average powers at the Watt level. We provide detailed information on construction and operation and give data on performance. A modified active stabilization scheme allows not only improved stability of operation but also insight into the dynamics of pulse formation.     

Harmonic Mode-Locked Ytterbium-Doped Fibre Ring Laser

We demonstrate a harmonic mode-locked ytterbium-doped fibre ring laser, which consists of a polarization-sensitive isolator, two polarization controllers, two 976nm laser diodes as the pump source and a two-segment ytterbium-doped fibre. Utilizing an additive pulse mode-locked technique based on nonlinear polarization evolution, the ytterbium-doped fibre laser can operate in mode-locked state by adjusting the position of polarization controllers. The cavity fundamental repetition rate is 23.78 MHz. We also observe the second- and third-harmonic mode locking in the normal dispersion region, and their repetition rates are 47.66 MHz and 71.56 MHz, respectively. Over-driving of the saturable absorber in the harmonic mode-locking pulse is analysed and discussed in detail.     

Directly diode-pumped Colquiriite regenerative amplifiers

The Colquiriite crystals are attractive materials for directly diode-pumped femtosecond oscillators and amplifiers. Cr:LiSAF, Cr:LiSGAF and Cr:LiCAF are for the first time directly compared for their use in regenerative amplifiers both experimentally and theoretically. A maximum pulse energy of 10 μJ was obtained at an absorbed pump power of 1.1 W. A review of the work is given including a Cr:LiSAF seed oscillator, outlining specific needs for seeding.     

A picosecond CuBr laser

A novel method for the pulse shortening of the 578 nm spectral line from a CuBr laser is proposed in this paper. By amplifying a seeded picosecond dye laser through the active medium of a CuBr laser, nearly Fourier-transform-limited picosecond pulses of the CuBr laser have been obtained and the output characteristics are also investigated in detail.     

Widely tunable optical parametric oscillator driven by a pulsed diode-pumped nonlinear-mirror mode-locked Nd:YAG laser

We report on the development of a pulsed diode end-pumped Nd:YAG laser mode-locked by a nonlinear mirror and stabilized by an acousto-optical modulator. With the introduction of appropriate intracavity loss, the laser is able to generate 22.8 ps pulses with the energy of 4.5 μJ. After amplification and frequency doubling stages, the second harmonic radiation is used to non-collinearly synchronously pump a β-barium borate optical parametric oscillator in a walk-off compensated scheme. The system demonstrates a wide-tuning range from 635 nm to 2.55 μm for the signal output, with maximum average conversion efficiency as high as 42%.