Structural and dielectric properties of LuFe2O4 thin films grown by pulsed-laser deposition

Epitaxial LuFe₂O₄ thin films are deposited on sapphire substrate by pulsed-laser deposition. Different growth conditions are tackled and it is found that substrate temperature is the most critical condition for the film growth; while below 750 °C the film crystallization is poor. The Lu:Fe ratio is also found to be important in forming the LuFe₂O₄ phase in the films; while higher content of Fe oxide than that of stoichiometric LuFe₂O₄ in the target is favorable for the formation of the LuFe₂O₄ phase. However, impurity phases such as Fe₃O₄ and Fe₂O₃ are induced in the film with a Fe oxide enriched target. A large dielectric tunability under electric field is revealed in the film; while the dielectric tunability decreases as the frequency increases, and eventually the dielectric tunability disappears above 500 MHz.     

Magnetodielectric and dielectric properties of orthorhombic HoMnO3 thin films

Sandwich-structural multilayer films Au/HoMnO₃/YBa₂Cu₃O_7 − δ were prepared epitaxially on SrTiO₃ (001) single crystal substrates by using pulsed laser deposition technique. The HoMnO₃ films crystallized in a metastable orthorhombic structure and the Au and YBa₂Cu₃O_7 − δ were used as electrodes to investigate the dielectric and magnetodielectric properties of HoMnO₃ films. The impedance and electric modulus spectroscopic plots were used to discern the intrinsic characteristics of HoMnO₃ films or unwanted interface effects. The low-temperature (~ 2 K) dependence of the dielectric constant of HoMnO₃ films as function of frequency shows anomalies around 43 K and 22 K, which is corresponding to the Néel temperature and lock-in transition of Mn³⁺ moments, respectively. The magnetodielectric effects of HoMnO₃ films were investigated at 100 kHz under a 2T applied magnetic field, and the dielectric constant was tuned resulting in a decrease of 3%. The results indicate the strong coupling between the dielectric properties and magnetic orders in orthorhombic HoMnO₃ films.     

Ac conductivity and dielectric properties of Ge20Se75In5 films

Amorphous films of Ge₂₀Se₇₅In₅ chalcogenide glass were prepared using a thermal evaporation technique. The chemical composition of the deposited films was examined using energy dispersive X-ray spectroscopy (EDX). The ac conductivity and dielectric properties of the prepared films have been studied as a function of temperature in the range from 300 to 423 K and frequency in the range from 10² to 10⁵ Hz. The experimental results indicate that ac conductivity σ_ac(ω) is proportional to ω^s where s equals 0.902 at room temperature and decreases with increasing temperature. The results obtained are discussed in terms of the correlated barrier hopping (CBH) model. The density of localized states N(E_F) at the Fermi level is found to have values of the order 10¹⁹ eV⁻¹ cm⁻³, which increase with temperature. The dielectric constant ?₁ and dielectric loss ?₂ were found to decrease with increasing frequency and to increase with increasing temperature over the ranges studied. The maximum barrier height W_m was estimated from an analysis of the dielectric loss ?₂ according to Giuntini equation. Its value for the deposited films (0.43 eV) agrees with that proposed by the theory of hopping of charge carrier over a potential barrier as suggested by Elliott for chalcogenide glasses.     

Structural and dielectric properties of parylene-VT4 thin films

58% semi-crystalline thin parylene-VT4 (–H₂C–C₆F₄–CH₂−)_n films, have been investigated by dielectric spectroscopy for temperature and frequency ranges of [−120 to 380 °C] and [0.1–10⁵ Hz] respectively. The study comprises a detailed investigation of the dielectric constant, dielectric loss and AC conductivity of this fluoropolymer. Dielectric behavior of parylene-VT4 is represented by a low dielectric constant with values in the range of 2.05–2.35 while the dielectric losses indicate the presence of two relaxation processes. Maxwell−Wagner−Sillars (MWS) polarization at the amorphous/crystalline interfaces with activation energy of 1.6 eV is due to the oligomer orientation. Electrical conductivity obeys to the well-known Jonscher law. The plateau in the low frequency part of this conductivity is temperature-dependent and follows an Arrhenius behavior with activation energy of 1.17 eV (deep traps) due to the fluorine diffusion. Due to its thermal stability with a high decomposition temperature (around 400 °C under air and 510 °C under nitrogen) and due to its good resistivity at low frequency (10¹⁵–10¹⁷ Ω m⁻¹), parylene-VT4 constitutes a very attractive polymer for microelectronic applications as low k dielectric. Moreover, when parylene-VT4 is subjected to an annealing, the dielectric properties can be still more improved.     

Characterisation of oxidised erbium films deposited on Si(1 0 0) substrates

Thin Er-oxide films were prepared by oxidation of pure Er films grown on glass and Si (p) substrates. The oxide films were characterised by X-ray fluorescence (XRF), X-ray diffraction (XRD), and optical absorption spectroscopy. The XRD analysis of the as-prepared oxide film and the vacuum-annealed film demonstrates the formation of Er₂O₃ phase with about 4.6% of ErO phase, which totally transforms into Er₂O₃ phase under annealing at 600 °C in dry oxygen. Therefore, the phase-structural changes in the prepared Er-oxide films because of the annealing and the long-time storage in vacuum were studied. The constructed Al/Er-oxide/Si MOS devices were characterised by measuring gate-voltage dependence of their capacitance and ac conductance, from which the surface states density (D_it) of insulator/semiconductor interfacial charges and the density of fixed charges in the oxide, were determined, which were within the device-grade range. The ac-electrical conduction and dielectric properties of the of the Er oxide–silicon structure were studied at room temperature. The data of ac conductivity measurements were found to follow the correlated barrier-hopping (CBH) model and the model's parameters were calculated, while the Kramers–Kronig (KK) relations explain the high-frequency dependence of the capacitance.     

Yttrium sesquioxide, Y2O3, thin films deposited on Si by ion beam sputtering: microstructure and dielectric properties

Y₂O₃ thin films were in-situ deposited by ion beam sputtering on Si substrate. The influence of the deposition parameters are studied by X-ray diffraction, electrical measurements and high resolution transmission electron microscopy observations. The stress sate of the oxide layers is investigated by the sin²ψ method as a function of the deposition parameters and the post-annealing treatments. Oxygen ion beam assisted deposition process or post-annealing of as-deposited thin films lead to the same relaxation of the internal compressive stress within the oxide layer. An SiO₂ layer sandwiched between Si and Y₂O₃ is always observed and should play a role both in the growing process and electrical properties of the MOS structure based on Y₂O₃ oxide layer. The results are interpreted in terms of diffusional process in the oxide, which are directly related to the temperature and the oxygen partial pressure during the growth process.     

Properties of La0.75Sr0.25MnO3 films grown on Si substrate with Si1−xGex and Si1−yCy buffer layers

The structural and electrical properties of La_0.75Sr_0.25MnO₃ (LSMO) film on Bi₄Ti₃O₁₂ (BTO)/CeO₂/YSZ buffered Si_1−xGe_x/Si (0.05 ≤ x ≤ 0.2 for compressive strain), blank Si, and Si_1−yC_y/Si (y = 0.01 for tensile) were studied. X-ray high resolution reciprocal lattice mapping (HRRLM) and atomic force microscopy (AFM) show that structural properties of LSMO and buffer oxide layers are strongly related to the strain induced by amount of Ge and C contents. The RMS roughness of LSMO on Si_1−xGe_x/Si has a tendency to increase with increasing of Ge content. Electrical properties of LSMO film with Ge content up to 10% are slightly improved compared to blank Si whereas higher resistivity values were obtained for the samples with higher Ge content.     

Magnetic properties of NiFe2O4 thin films grown on La0.7Sr0.3MnO3-buffered Si substrate

Nickel ferrite NiFe₂O₄ (NFO) thin films have been prepared on a Si substrate (NFO/Si) and La_0.7Sr_0.3MnO₃ (LSMO)-coated Si (100) substrate (NFO/LSMO/Si) by RF magnetron sputtering. The microstructures and magnetic properties of the two films were systematically investigated. X-ray diffraction (XRD) and atomic force microscopy (AFM) revealed that highly (331)-oriented NFO films with a smooth surface were grown on the LSMO/Si substrate. The magnetization of the films was measured at room temperature. It showed a clear hysteresis loop in both samples, with the magnetic field applied in the plane. However, no hysteresis loop is seen with the magnetic field applied perpendicular to the film plane. This indicates the presence of an anisotropy favoring the orientation of the magnetization in the direction parallel to the film plane. A study of magnetization hysteresis loop measurements indicates that the LSMO buffer layer may improve the magnetic properties of NFO thin films, and that the saturation magnetization increases from 4.15 × 10⁴ to 3.5 × 10⁵ A/m.     

Low temperature fabrication of barium titanate hybrid films and their dielectric properties

A method for incorporating BT nano-crystalline into barium titanate (BT) films is proposed for a low temperature fabrication of high dielectric constant films. BT nanoparticles were synthesized by hydrolysis of a BT complex alkoxide in 2-methoxyethanol (ME)/ethanol cosolvent. As the ME volume fraction in the cosolvent (ME fraction) increased from 0 to 100%, the particle and crystal sizes tended to increase from 13.4 to 30.2 nm and from 15.8 to 31.4 nm, respectively, and the particle dispersion in the solution became more improved. The BT particles were mixed with BT complex alkoxide dissolved in an ME/ethanol cosolvent for preparing a precursor solution that was then spin-coated on a Pt substrate and dried at 150 °C. The dielectric constant of the spin-coated BT hybrid film increased with an increase in the volume fraction of the BT particles in the film. The dissipation factor of the hybrid film tended to decrease with an increase in the ME fraction in the precursor solution. The hybrid film fabricated at a BT fraction of 30% and an ME fraction of 25% attained a dielectric constant as high as 94.5 with a surface roughness of 14.0 nm and a dissipation factor of 0.11.     

Effect of the microwave oven on structural, morphological and electrical properties of SrBi4Ti4O15 thin films grown on Pt/Ti/SiO2/Si substrates by a soft chemical method

Thin films of SrBi₄Ti₄O₁₅ (SBTi), a prototype of the Bi-layered-ferroelectric oxide family, were obtained by a soft chemical method and crystallized in a domestic microwave oven. For comparison, films were also crystallized in a conventional method at 700 °C for 2 h. Structural and morphological characterization of the SBTi thin films were investigated by X-ray diffraction (XRD) and atomic force microscopy (AFM), respectively. Using platinum coated silicon substrates, the ferroelectric properties of the films were determined. Remanent polarization P_r and a coercive field E_c values of 5.1 μC/cm² and 135 kV/cm for the film thermally treated in the microwave oven and 5.4 μC/cm² and 85 kV/cm for the film thermally treated in conventional furnace were found. The films thermally treated in the conventional furnace exhibited excellent fatigue-free characteristics up to 10¹⁰ switching cycles indicating that SBTi thin films are a promising material for use in non-volatile memories.     

Deposition temperature effect on the electric and dielectric properties of InSbSe3 thin films

Thin films of InSbSe₃ compound were obtained by thermal evaporation on to clean glass substrates maintained at various deposition temperatures from 423 to 593 K. At deposition temperature T_d?473 K, the films have an amorphous structure, while those prepared at T_d>473 K have a polycrystalline structure identified by X-ray diffraction analysis. The DC electrical conductivity of the films increases as T_d increases, whereas activation energy decreases with increasing T_d, which reflects a change in the degree of disorder. AC conductivity was studied as a function of frequency in the range (10²-10⁵ Hz) and as a function of deposition temperature. The dependence of T_d on the frequency exponent s in the conductivity-frequency relation confirmed that the mechanism of AC conductivity is correlated barrier hopping with a single polaron hopping mechanism. The discrepancy between DC and AC activation energies was studied as a function of deposition temperature. The maximum barrier height W_m and the density of defect states N were also determined. Finally, the dependence of dielectric constant and dielectric loss on T_d were studied. A Debye-like relaxation of dielectric behavior was observed for crystalline films and is found to be a thermally activated process. The position of maximum dielectric loss is shifted towards higher temperature with T_d treatment and there by reduces the relaxation time.     

Crystal orientation dependence of the out-of-plane dielectric properties for barium stannate titanate thin films

The orientation-dependent out-of-plane dielectric properties of barium stannate titanate (Ba(Sn_0.15Ti_0.85)O₃ (BTS)) thin films prepared by sol–gel method were investigated. Films with (1 0 0), (1 1 0), and (1 1 1) orientation were grown on LaNiO₃-buffered (1 0 0), (1 1 0), and (1 1 1) LaAlO₃ (LAO) single-crystal substrates, respectively. The different temperature of the dielectric constant maximum (T_m) of the BTS thin films with different orientation was believed to be attributing to stress inside the films. Films with the (1 1 1) orientation had higher relative dielectric constant and tunability than (1 0 0)- and (1 1 0)-oriented films. This difference in dielectric properties in these three kinds of oriented BTS films may be attributed to change in the direction and magnitude of electric polarization in orientation engineered BTS films and stress in the films.     

Dielectric properties of parylene AF4 as low-k material for microelectronic applications

Using dielectric spectroscopy analysis, three relaxation mechanisms have been identified in 60% semi-crystalline parylene AF4 ([-F₂C-C₆H₄-CF₂-]_n) fluoropolymers. At high temperature, fluorine species located at the electrode/polymer interface involve a space-charge polarization. β-Process assigned to local molecular motions of the C-F dipoles and the γ-relaxation due to local fluctuations of the F₂C-C₆H₄ groups are also evidenced at intermediate and cryogenic temperatures respectively. Space-charge fluorine F⁻, β and γ relaxations obey an Arrhenius law against temperature with activation energy E_a (F⁻) = 1.26 eV, E_a (β) = 0.59 eV and E_a (γ) = 0.29 eV.     

在p-Si(100)上溅射法生长ZnO的结构和光学特性

室温下在ｐ－Ｓｉ（１００）上采用直流反应磁控溅射法外延生长了ＺｎＯ薄膜。ＸＲＤ测量表明了ＺｎＯ是高度ｃ轴单一取向生长的,ＸＲＣ测量则表明了ＺｎＯ的高质量在室温下的ＰＬ测量中见到了带边发射,其强度与晶体质量有关。     

Plasma-enhanced chemical vapor deposition of TiO2 thin films for dielectric applications

Amorphous TiO₂ thin films were formed by plasma-enhanced chemical vapor deposition (PECVD) from mixtures of titanium IV isopropoxide (Ti(O-i-C₃H₇)₄) and oxygen. The deposition rate was found to be weakly activated, with an apparent activation energy of 4.5 kJ/mol. The deposition rate increased with equivalence ratio and decreased with plasma power. This dependence on atomic oxygen density was consistent with behavior observed in other metal oxide PECVD systems. Metal-insulator-silicon devices were fabricated, and characterized using capacitance-voltage measurements. The apparent dielectric constant of the TiO₂ thin films increased from 15 to 82 with film thickness. The observed variations were consistent with the formation of an interfacial SiO₂ layer. Assuming that a TiO₂/SiO₂ bilayer behaves as two capacitors in series, an intrinsic TiO₂ dielectric constant of 82 ± 10 and an interfacial SiO₂ layer thickness of 3 ± 1 nm were extracted from electrical measurements.     

Ferroelectric properties of BiFeO3 films grown by sol–gel process

Several methods have been used to prepare ferroelectromagnetic BiFeO₃ films. In this paper, we adopted a sol–gel process to fabricate BiFeO₃ films on indium tin oxide (ITO)/glass substrates. X-ray diffraction pattern indicated that the samples are randomly oriented. Cross section scanning microscopy showed that the thicknesses of both films were about 1.2 μm and no apparent diffusion between the BiFeO₃ films and ITO/glass substrates. Remnant polarization of 2.0 and 1.75 μC/cm² were identified by the measuring of electric hysteresis loops for the films annealed at 500 and 600 °C respectively at an applied field of 108 kV/cm. Dielectric property and loss factor were investigated as a function of frequency. In addition, magnetism was detected at 77 K.     

STO/YBCO薄膜的制备及介电性能研究

采用脉冲激光沉积技术,在(100)LaAlO3单晶基片上生长SrTiO3/Y1Ba2Cu3O7-x(STO/YBCO)多层薄膜。XRD分析表明:YBCO薄膜和STO薄膜均为C轴取向,STO(002)/YBCO(006)衍射峰摇摆曲线半高宽为0.73°。AFM分析表明,STO/YBCO多层薄膜表面平整、均匀,在77K,100kHz的测试条件下,STO薄膜介电损耗tgδ<10-2,在53.6kV/cm电场作用下,介电常数的相对变化为38%。     

Effect of lattice-mismatch strain on the structural and dielectric properties of (Pb,Sr)TiO3 thin films grown by pulsed laser deposition

Pb_0.35Sr_0.65TiO₃ (PST) thin films have been fabricated on LaAlO₃ (LAO) and MgO substrates using the pulsed laser deposition technique. The microstructure characteristics of the films were examined by means of X-ray diffraction, atomic force microscopy, scanning electron microscopy and Raman spectroscopy, and the results indicate that the films are epitaxially grown and show good crystallinity. The dielectric constant dependence on DC bias voltage and temperature were measured in a planar capacitor configuration for these films. Compared to the PST thin film grown on LAO, the film grown on MgO showed a higher temperature of the capacitance maximum and a higher dielectric constant at zero bias. We explain the results by taking into account the lattice-mismatch strain between the substrate and the film. In contrast to the in-plane compressive strain induced by the LAO substrate, the in-plane tensile strain induced by the MgO substrate enlarges the unit cell of PST and enhances the magnitude of dipole moments, which increases the dielectric constant. These results indicate that a reasonable in-plane tensile strain could improve the dielectric properties of PST thin films.     

Tantalum pentoxide (Ta2O5) thin films for advanced dielectric applications

This paper reviews the present knowledge on tantalum pentoxide (Ta₂O₅) thin films and their applications in the field of microelectronics and integrated microtechnologies. Different methods used to produce tantalum oxide layers are described, emphazing elaboration mechanisms and key parameters for each technique. We also review recent advances in the deposition of Ta₂O₅ in the particular field of microelectronics where high quality layers are required from the structural and electrical points of view. The physical, structural, optical, chemical and electrical properties of tantalum oxide thin films on semiconductors are then presented and essential film parameters, such as optical index, film density or dielectric permittivity, are discussed. After a reminder of the basic mechanisms that control the bulk electrical conduction in insulating films, we carefully examine the origin of leakage currents in Ta₂O₅ and present the state-of-the-art concerning the insulating behaviour of tantalum oxide layers. Finally, applications of tantalum oxide thin films are presented in the last part of this paper. We show how Ta₂O₅ has been employed as an antireflection coating, insulating layer, gate oxide, corrosion resistant material, and sensitive layer in a wide variety of components, circuits and sensors.     

Structural, dielectric and optical properties of Ba(Ti, Zr)O3 thin films prepared by chemical solution deposition

Ba(Ti_0.95Zr_0.05)O₃ (BTZ) thin films grown on Pt/Ti/SiO₂/Si(100) substrates were prepared by chemical solution deposition. The structure and surface morphology of BTZ thin films has been studied by X-ray diffraction (XRD) and scanning electron microscope (SEM). At 100 kHz, the dielectric constant and dissipation factor of the BTZ film are 121 and 0.016, respectively. The ellipsometric spectrum of the BTZ thin film annealed at 730 °C was measured in the range of wavelength from 355 to 1700 nm. Assuming a five-layer model (air/surface roughness layer/BTZ/interface layer/Pt) for the BTZ thin films on platinized silicon substrates, the optical constant spectra (refractive index n and the extinction coefficient k) of the BTZ thin films were obtained.