24万兆比特每秒激光器/光调制器驱动电路

一种应用于高速光纤通讯系统的激光二极管／调制器的单片集成驱动电路已开发成功。该电路的制造使用了0．2μm PHEMT工艺,它的工作信号带宽超过12GHz。在12Gb／s速率下测得了摆幅峰值为3．4V的输出信号眼图。基于实验结果,我们判断该电路的最大工作速率超过24Gb／s。该驱动器电路使用单电源-4．5V供电,功耗小于1．8W。     

InP-InGaAs single HBT technology for photoreceiver OEIC's at 40Gb/s and beyond

We describe an advanced InP-InGaAs-based technology for the monolithic integration of pin-photodiodes and SHBT-transistors. Both devices are processed using the same epitaxial grown layer structure. Employing this technology, we have designed and fabricated two photoreceivers achieving transimpedance gains of 170 Ω/380 Ω and optical/electrical bandwidths of 50 GHz/34 GHz. To the best of our knowledge, this is the highest bandwidth of any heterojunction bipolar transistor (HBT)-based photoreceiver optoelectronic integrated circuit (OEIC) published to date. We even predict a bandwidth of 60 GHz for the same circuit topology by a simple reduction of the photodiode diameter and an adjustment of the feedback resistor value     

Proton implanted VCSEL's for 3 Gb/s data links

Transverse single-mode and multimode intensity modulated butt-coupled InGaAs vertical cavity surface emitting lasers (VCSEL)s are investigated as a light source for optical fiber communication systems. Data transmission at 3 Gb/s with a bit error rate (BER) of less than 10 ^-11 is reported for both 4.3 km of standard fiber, as well as 0.5 km of multimode graded-index fiber, 10-μm active diameter single-mode VCSELs are shown to have lower mode competition noise requiring 3 dB and 6 dB less power at the front end receiver at a BER of 10^-11 compared to 19-μm and 50-μm active diameter devices, respectively. In data transmission with multimode VCSELs, the dispersion penalty is lower than for single-mode sources since the noise at the receiver is mainly determined by transmitter-mode competition noise     

40 Gb/s differential traveling wave modulator driver

In this letter a MMIC differential traveling wave driver for 40 Gb/s electro-absorption modulation driver is presented. The driver delivers 2.7 Vp-p or 2.4 V eye amplitude at each output into 50 /spl Omega/ load. The driver has high gain (>20 dB), a 3 dB bandwidth of 45 GHz, and rise/fall times of only 10/9 ps, respectively. The circuit uses a single -5.0 V power supply and consumes 1.8 W of dc power. The driver also features cross-point control and output amplitude control functions.     

2.5Gb/s光外调制器及驱动器

文章对光外调制作了原理及实验上的分析,着重研究作为驱动器的大功率宽带放大器。对２．５Ｇｂ／ｓＮＲＺ伪随机码对放大器的低端截止频率和高端截止频率的要求进行了理论分析。提出并实验了几种放大器高频补偿技术,取得了好的效果。为满足输入输出阻抗为５０Ω的要求采用了共面波导计算方法,以确定印刷电路板导线尺寸。最后对光外调制器输出波形进行了测试。     

Si-analog IC's for 20 Gb/s optical receiver

Two Si-Analog IC's, a preamplifier IC and a decision IC, for a 20 Gb/s optical receiver have been developed using SiGe-base bipolar transistors having a 60 GHz maximum cutoff frequency. The preamplifier employing a dual feedback loop increases the -3 dB bandwidth up to 19 GHz. A decision IC, composed of a gain controllable amplifier with a bias stabilization circuit and D-F/F, operated at up to 20 Gb/s with a 200-mVp-p input sensitivity     

24Gb/s GaAs PHEMT激光二极管/调制器驱动器

采用0.2μm GaAs PHEMT工艺设计并实现了超高速光纤通信系统用激光二极管/调制器集成驱动器电路.整个电路由带源极跟随器的两级差分放大电路、电容耦合电流放大器和输出电路组成.电路芯片面积为1.0mm×0.9mm.测试结果表明,采用单一 5V电源供电时直流功耗为1.5W,输出最高电压幅度为2.4V,电路最高工作速率高于24Gb/s,可以应用于光纤通信SDH(synchronous digital hierarchy)传输系统.     

24Gb/s GaAs PHEMT激光二极管/调制器驱动器

采用0.2μm GaAs PHEMT工艺设计并实现了超高速光纤通信系统用激光二极管/调制器集成驱动器电路.整个电路由带源极跟随器的两级差分放大电路、电容耦合电流放大器和输出电路组成.电路芯片面积为1.0mm×0.9mm.测试结果表明,采用单一+5V电源供电时直流功耗为1.5W,输出最高电压幅度为2.4V,电路最高工作速率高于24Gb/s,可以应用于光纤通信SDH(synchronous digital hierarchy)传输系统.     

Silicon bipolar chipset for SONET/SDH 10 Gb/s fiber-opticcommunication links

High-speed multiplexers, demultiplexers, frequency dividers, mixers, and amplifiers are key electronic components in high-speed fiber-optic communications systems such as SONET/SDH. In this paper, we present several important digital and analog integrated circuits (IC) which have been developed for use in SONET/SDH 10 Gb/s optical communication links. The circuits have been fabricated in MOSAIC 5E, an advanced silicon bipolar technology (f_T=26 GHz). The resulting chipset which amounts to a total of 10 IC's consists of multiplexers, demultiplexers, a regenerative frequency divider (2:1), a dual output limiting amplifier, and two different types of mixers for clock extraction. Specifically, the design and performance of these IC's and a hybrid clock recovery module are discussed. The high performance and potential low cost of this research chipset show that advanced silicon bipolar circuit technology can play an important role in future multigigabit fiber-optic communication systems     

10Gb/s光调制器InGaP/GaAs HBT驱动电路的研制

采用自行研发的4英寸InGaP/GaAs HBT技术,设计和制造了10Gb/s光调制器驱动电路.该驱动电路的输出电压摆幅达到3V_pp,上升时间为34.2ps(20~80%),下降时间为37.8ps(20~80%),输入端的阻抗匹配良好(S11=-12.3dB@10GHz),达到10Gb/s光通信系统(SONET OC-192,SDH STM-64)的要求.整个驱动电路采用-5.2V的单电源供电,总功耗为1.3W,芯片面积为2.01×1.38mm².     

High-performance and low-consumption 10 Gb/s GaAs PHEMT driver for external modulation transmitter

This letter describes the realization of a high-performance GaAs PHEMT driver for 10 Gb/s transmitter with external coding in long haul optical transmission systems. It is shown that with an appropriate design for both IC and packaging, gain up to 14 dB, 2.5 Vp-p output drive-voltage and 1.5 W power consumption can be achieved, with adequate switching times for bit rates up to 12.5 Gb/s. The module has been successfully tested with a 18 GHz bandwidth polarization-independant pigtailed MQW electroabsorption modulator.     

2.5-10Gb/s光发射机驱动电路HEMT IC中器件模型参数

对高速调制器驱动电路HEMTIC中器件参数进行了研究,着重讨论了HEMT器件直流参数、交流参数对外调制驱动电路特性的影响,给出了满足电路性能要求的器件参数范围;对2.5-10Gb/sPHEMTIC光驱动电路进行了计算机仿真,眼图模拟结果表明满足2.5-10Gb/s高速光纤通信系统需要.     

Performance and Optimization of 10 Gb／s Eiectroabsorption Modulator in Short Transmission

Transmission performance of electroabsorption modulator in 10 Gb/s transmission systems has been simulated and analyzed under the condition of taking into account the chirp,extinction ratio, transmissivity and rise/fall time. Results show that short transmission distance without EDFA after EAM can be used in future metropolitan area network,but the transmissivity must be carefully considered. The sampling time range and decision level can be optimized to reduce the bit error ratio.     

2.5—10Gb/s光发射机驱动电路HEMT IC中器件模型参数

对高速调制器驱动电路 HEMT IC中器件参数进行了研究 ,着重讨论了 HEMT器件直流参数、交流参数对外调制驱动电路特性的影响 ,给出了满足电路性能要求的器件参数范围 ;对 2 .5— 10 Gb/ s PHEMT IC光驱动电路进行了计算机仿真 ,眼图模拟结果表明满足 2 .5— 10 Gb/ s高速光纤通信系统需要     

一种适用于内嵌时钟串行链路的5Gbps小面积CDR

本文提出了一种支持多标准的具有系数可调的均衡器和宽跟踪能力的时钟数据恢复电路。基于对系统参数和一阶 bang-bang 时钟数据恢复电路的环路特性分析,推导出电路设计参数。考虑到抖动性能,追踪能力以及芯片面积,文中采用了一阶数字滤波器和6-bit DAC以及高线性度的相位插值器实现了高相位调整精度和小面积的时钟恢复电路,同时该结构实现了±2200ppm的频偏跟踪能力,使得该结构适用于不同源的高速串行传输系统,尤其是内嵌时钟结构。该设计已经在55nm CMOS工艺上流片验证,测试结果显示符合误码率的要求以及抖动容忍规范。该测试芯片整体面积是0.19mm2,其中时钟恢复电路只占0.0486mm2 而且该电路工作在5Gbps,供电电压为1.2V时,只消耗30mW。     

Performance and Optimization of 10 Gb/s Electroabsorption Modulator in Short Transmission

Transmission performance of electroabsorption modulator in 10 Gb/s transmission systems has been simulated and analyzed under the condition of taking into account the chirp,extinction ratio, transmissivity and rise/fall time.Results show that short transmission distance without EDFA after EAM can be used in future metropolitan area network,but the transmissivity must be carefully considered. The sampling time range and decision level can be optimized to reduce the bit error ratio.     

A monolithic 5 Gb/s p-i-n/HBT integrated photoreceiver circuit realized from chemical beam epitaxial material

The authors report on a high performance monolithic photoreceiver fabricated from chemical beam epitaxy (CBE) grown InP/InGaAs heterostructures, incorporating a p-i-n photodetector followed by a transimpedance preamplifier circuit configured from heterojunction bipolar transistors (HBTs). The optoelectronic integrated circuit (OEIC) was fabricated on a semi-insulating Fe-doped InP substrate. Microwave on-wafer measurements of the frequency response of the transistors yielded unity current gain cutoff frequencies of 32 GHz and maximum oscillation frequencies of 28 GHz for collector currents between 2 and 5 mA. The photoreceiver was operated up to 5 Gb/s, at which bit rate a sensitivity of -18.8 dBm was measured at a wavelength of 1.5 mu m. The results demonstrate that the CBE growth technique is suitable for high performance HBT-based OEICs.<>     

A 1.25 Gb/s laser diode driver with pulse width optimization

A 1.25 Gb/s laser diode driver(LDD) with pulse width optimization has been implemented in a 0.6-μm BiCMOS process.This paper illustrates the relation between the pulse width distortion(PWD) of the output eye diagram and the driving amplitude from the second pre-amplifier.Also,a specific current setting circuit working together with an LDD is proposed to generate the optimum driving amplitude and to avoid device nonlinearity,temperature variation and process deviation.The measured results show a maximum c...     

具有脉冲宽度优化的1.25Gb/s激光驱动器

A 1.25 Gb/s laser diode driver (LDD) with pulse width optimization has been implemented in a 0.6-μ m BiCMOS process. This paper illustrates the relation between the pulse width distortion (PWD) of the output eye diagram and the driving amplitude from the second pre-amplifier. Also, a specific current setting circuit working together with an LDD is proposed to generate the optimum driving amplitude and to avoid device nonlinearity, temperature variation and process deviation. The measured results show a maximum crossing deviation of –3% and indicate the desired independence and stability.