CO2激光差频GaSe晶体产生太赫兹波的数值计算

以可调谐CO2激光差频非线性GaSe晶体为例,在共线相位匹配方式下,计算了oe-e和oe-o两种相位匹配方式下的角度调谐特性、有效非线性系数、走离角和允许角。结果表明:GaSe晶体可产生73.84～3 000 m的太赫兹波,且有效非线性系数为41～54 pm/V;走离角在1.771～10.63之间;所允许的最大发散角为13.95～94.7 mrad,对入射光的方向性要求较高。对于500 m以上的太赫兹波,两种匹配方式除有效非线性系数外没有大的区别。模拟结果对于开展基于激光差频技术产生太赫兹的研究具有重要的指导意义。     

CO2激光差频产生太赫兹波的理论计算及分析

为进一步发挥CO2激光差频产生太赫兹(THz)辐射的潜力,通过计算GaAs, ZnGeP2和GaSe晶体差频的相位匹配参数,结合晶体光学参数和损伤阈值比较3种晶体的差频性能和各自优势,分析相位失配和晶体吸收对差频转换效率的影响,得到3种晶体差频产生THz辐射各自的调谐范围、差频效率和实验操作等特征,表明选择低吸收系数晶体的重要性。     

基于CO2激光的AgGaSe2晶体中3次谐波产生

为了在AgGaSe2 晶体中产生3次谐波,利用自行研制的1台可调谐脉冲CO2激光器,在2次谐波中采用Ⅰ类匹配,并在3次谐波中采用Ⅱ类匹配的方法。实验中CO2激光输出波长为9.6m,在AgGaSe2 晶体中得到了波长为4.8m的2次谐波以及波长为3.2m的3次谐波,其峰值功率分别为88kW和4kW,并测量了相位匹配允许角。结果表明,在该AgGaSe2晶体实验中能有效地输出3次谐波,随着CO2激光功率的增大,输出2次谐波峰值功率和3次谐波峰值功率的级数都增加。     

新型的倍频晶体β-BaB_2O_4在锁模Ar~+激光脉冲自相关测量中的应用

β-BaB_2O_4(偏硼酸钡)是中国首先发现与生长的新型倍频晶体,它具有倍频系数高、不易潮解、不易碎裂等优点。我们的计算与实验结果表明,在室温下,偏硼酸钡只需用角度调谐便能实现对Ar~+激光器所有谱线的相位匹配,因此将这种晶体用于Ar~+激光脉冲的自相关测量中一定能克服SHG法和互相关法的弱点。     

非线性光学晶体材料GaSe激光参数的模拟计算

对红外非线性光学晶体GaSe的非线性性质进行了研究.计算模拟了1.064μm、2.05μm、2.79μm泵浦情况下Ⅰ、Ⅱ类相位匹配情况下GaSe晶体的相位匹配角、有效非线性系数、走离角、允许角和泵浦波波长的关系.同时计算了晶体激光光参量震荡和倍频波波长和相位匹配角、有效非线性系数、走离角、允许角的关系.对计算结果进行了分析比较.所得结果对于GaSe晶体用于特定波长激光器设计新波段提供了理论依据.     

基于波长到时间映射快速测量纠缠光子相位匹配波长的实验方法

准相位匹配有利于实现高效的自发参量下转换,它由非线性晶体的极化周期和依赖于温度的折射率决定。为了确定特定波长处所需的晶体温度,需要测量相位匹配波长随晶体温度的变化关系。单色仪的传统测量方法具有测量精度较低且耗时长等缺点。提出了一种实验方法,该方法能快速准确测量纠缠光子相位匹配波长随晶体温度变化的关系。在信号和闲置光路中先后加入色散元件,通过测量纠缠光子对到达时间关联峰值处的时间延迟随晶体温度的变化关系,利用波长到时间的映射关系将其转化为波长随晶体温度的变化关系。给出了周期极化铌酸锂(PPLN)波导和周期极化磷酸氧钛钾(PPKTP)晶体的实验测量结果,测量精度优于0.1 nm,测量时间约为几分钟。测量精度受限于单光子探测器的抖动时间和色散元件色散量的大小。原则上,抖动时间越小,色散量越大,测量精度越高。最后讨论了Sellmeier方程计算的结果与实验结果存在差异的可能原因。所提方法可以用来校准相位匹配波长与晶体温度的关系及极化周期,并有望实现温度依赖的Sellmeier方程的修正或改进。     

非线性光学晶体材料GaSe激光参数的模拟计算

对红外非线性光学晶体GaSe的非线性性质进行了研究.计算模拟了1.064 μm、2.05 μm、2.79 μm泵浦情况下Ⅰ、Ⅱ类相位匹配情况下GaSe晶体的相位匹配角、有效非线性系数、走离角、允许角和泵浦波波长的关系.同时计算了晶体激光光参量震荡和倍频波波长和相位匹配角、有效非线性系数、走离角、允许角的关系.对计算结果进行了分析比较.所得结果对于GaSe晶体用于特定波长激光器设计新波段提供了理论依据.     

KBe2BO3F2用于产生紫外波长的角度调谐分析

为了研究非线性光学晶体KBe2BO3F2的光参变特性,根据晶体的色散方程和动量、能量守恒定律,采用计算机数值模拟的方法,得出了KBe2BO3F2晶体在Ⅰ类和Ⅱ类相位匹配下的角度调谐范围,并与另一种优良的非线性晶体CsL iB6O10进行了比较,从而得出KBe2BO3F2晶体比CsLiB6O10晶体可获得更短的紫外波长输出和更宽的连续调谐输出的结果。理论计算结果表明,当抽运光为213nm时,对于Ⅰ类相位匹配条件,可以获得最短波长220nm的紫外光输出。     

非线性器件用ADP,KDP和KD~*P晶体的温度色散

在使用KDP,KD~*P和ADP这些晶体时,由于缺乏合适的温度色散数据,因此在许多实验中,无法解释这些晶体各种参量互作用时的调谐曲线,本人提出一组描述温度色散的方程,可以精确地预计这些晶体的相位匹配特性与温度的关系。     

Er掺杂GaSe晶体特性的研究

对改进型布里奇曼方法生长的Er掺杂GaSe晶体的成 分、光学特性和倍频特性进行了测量和分 析。研究发现,掺杂晶体中Er的分布不均匀且浓度远低于装料浓度,高浓度掺杂使得晶体光 学质量下降。通 过对掺杂晶体光学特性测量发现,Er的掺杂没有明显改变晶体的光谱特性,掺杂浓度为0.07mass.%的 GaSe:Er晶体在可见光波段表现出了比较好的光学性质。通过对晶体拉曼光谱的测量发现, 在GaSe:Er (0.09 mass.%)和GaSe:Er (0.10mass.%)晶体中出现了新的拉曼散射带,它 是由Er³⁺的⁴F9/2→⁴I9/2跃迁产生的。 通过飞秒Ti:sapphire激光和CO₂激光泵浦下I类倍频实验发现,掺杂晶体相位匹配角与纯G aSe晶体相比没有明显变 化,实验结果与理论曲线符合得较好,最佳浓度掺杂晶体GaSe:Er(0.07mass.%)将CO₂倍 频转换效率提高了43%。     

VOLTE容灾机制研究及优化方案

_{本文首先对VOLTE现网网络结构及容灾机制进行研究分析,发现现存容灾机制中存在的缺点和不确定性,针对其中的问题,针对性地进行了深入研究和分析,创新的提出了1种快速容灾抢通方案,以达到提升VOLTE业务运维能力和用户业务感知的目的。}     

Calculation of energy band gaps in quaternary iii/v alloys

The dielectric theory of electronegativity is applied to the calculation of the compositional dependence of the energy band gap for quaternary III/V alloys of type A_l-xB_xC_1-yD_y and A_1-x-yB_xC_yD. The departure from linearity of E_G versus x and y is taken to be the sum of two terms, the intrinsic or virtual crystal term and the extrinsic term due to effects of aperiodicity which for one type of alloy may occur on both sublattices. Rather than simply treating the quaternary as an average of the bounding ternary systems, as has been common in the past, the intrinsic departure from linearity is calculated by assuming E_h,i,C, and D_av to vary linearly with x and y. The result is a smaller intrinsic deviation from linearity and a much better fit to existing data in the system Ga_1-xIn_xAs_1-y P_y. The calculation is also applied to three systems where no data exist but which are of great interest because of their potential application for the fabrication of lattice matched tandem solar cells: Ga_l-xA1_xAs_l-ySb_y. Ga_1-x-yA1_xIn_yAs, and GaAs_1-x-yP_xSb_y.     

新形势下河北移动全业务支撑策略研究

随着铁塔公司的成立及国家在“宽带中国”“提速降费”等一系列通信领域的重大战略实施,全业务运营越来越成为河北移动保持领先,实现卓越的重要支点。基于此河北移动启动大规模综合业务区建设,由传统传输网围绕基站建设转向全业务支撑。河北移动将综合业务区建设与全业务机房的选取统筹安排,建设综合业务区与全业务机房的联络光缆,将综合业务区光缆网成为承载重要集客数据专线和4G拉远站的载体,合理、有序、迅速实现“一张光缆网”的建设,鼎力支撑全业务及4G的发展。     

Nickel silicidation techniques for strained Si1?xGex, Si1?x?yGexCy, and Si1?yCy alloys material-device applications

A nickel silicide process for Si_1-xGe_x, Si_1-x-yGe_xC_y, and Si_1-yC_y alloy materials compatible with Si technology has been developed. Low-resistivity-phase (12–20 μΘ cm) nickel silicides have been obtained for these alloys with different low sheet-resistance temperature windows. The study shows that thin (15–18 nm) silicide layers with high crystalline quality, smooth silicide surface, and smooth interface between silicide and the underlying material are achievable. The technique could be used to combine the benefits of Ni silicide and Si_1-xGe_x, Si_1-x-yGe_xC_y, and Si_1-yC_y alloys. The technique is promising for Si or Si_1-xGe_x, Si_1-x-yGe_xC_y, and Si_1-yC_y alloy-based metal-oxide semiconductor, field-effect transistors (MOSFETs) or other device applications.     

Low pressure metalorganic chemical vapor deposition of InP and related compounds

The low pressure metalorganic chemical vapor deposition epitaxial growth and characterization of InP, Ga_0.47In_0.53 As and Ga_xIn_1-xAs_yP_1-y, lattice-matched to InP substrate are described. The layers were found to have the same etch pit density (EPD) as the substrate. The best mobility obtained for InP was 5300 cm² V⁻¹S⁻¹ at 300 K and 58 900 cm² V⁻¹ S⁻¹ at 77₂K, and for GaInAs was 11900 cm² V⁻¹ S⁻¹ at 300 K, 54 600 cm² V⁻¹ S⁻¹ at 77 K and 90 000 cm V⁻¹S⁻¹ at 2°K. We report the first successful growth of a GaInAs-InP superlattice and the enhanced mobility of a two dimensional electron gas at a GaInAs -InP heterojunction grown by LP-MO CVD. LP MO CVD material has been used for GaInAsPInP, DH lasers emitting at 1.3 um and 1.5 um. These devices exhibit a low threshold current, a slightly higher than liquid phase epitaxy devices and a high differential quantum efficiency of 60%. Fundamental transverse mode oscillation has been achieved up to a power outpout of 10 mW. Threshold currents as low as 200 mA dc have been measured for devices with a stripe width of 9 um and a cavity length of 300 um for emission at 1.5 um. Values of T in the range 64–80 C have been obtained. Preliminary life testing has been carried out at room temperature on a few laser diodes (λ = 1.5μm). Operation at constant current for severalthousand hours has been achieved with no change in the threshold current.     

Transport properties of thermoelectric materials for coolers

The Seebeck coefficient, thermal conductivity, electrical conductivity and Hall coefficient of cooler grade, p-and n-type ternary alloys of Bi₂Te₃-Sb₂Te₃-Sb₂Se₃ were measured between 10 and 300 K. Between 300 K and about 150 K the temperature dependence of the transport properties can be explained by assuming nondegeneracy and a lattice scattering mechanism. The difference between the temperature dependence of the Hall effect in n-and p-type alloys can be explained by the presence of sub-bands of light and heavy holes in the valence band of p-type alloys.     

Characterization of a rapid thermal anneal TiNxOy/TiSi2 contact barrier

In this paper, the physical and electrical properties of a TiN_xO_y/TiSi₂ dual layer contact barrier are reported. The TiN_xO_y/TiSi₂ barrier was formed by rapidly annealing a Ti thin film on Si in an N₂ ambient. During this process, the Ti film surface reacts with N₂ to form a TiN_xO_y skin layer and the bulk of the Ti film reacts with Si to form an underlying TiSi₂ layer. The influences of rapid thermal anneal (RTA) conditions on the TiN_xO_y layer were investigated by varying the RTA temperature from 600 to 1100° C and cycle duration from 30 to 100 s. It is found that the resulting TiN_xO_y and TiSi₂ layer thicknesses are dependent on RTA temperature and the starting Ti thickness. For a starting Ti thickness of 500Å, 150Å thick TiN_xO_y and 800Å thick TiSi₂ are obtained after an RTA at 900° C for 30 s. The TiN_xO_y thickness is limited by a fast diffusion of Si into Ti to form TiSi₂. When a Ti film is deposited on SiO₂, Ti starts to react with SiO₂ from 600° C and a significant reduction of the SiO₂ thickness is observed after an RTA at 900° C. The resulting layer is composed of a surface TiN_xO_y layer followed by a complex layer of titanium oxide and titanium suicide. In addition, when Ti is depos-ited on TiSi₂, thicker TiN_xO_y and TiSi₂ layers are obtained after RTA. This is because the TiSi₂ layer retards the diffusion of Si from the underlying substrate into the Ti layer. NMOSFETs were fabricated using the TiN_xO_y/TiSi₂ as a contact barrier formed by RTA at 900° C for 30 s and a significant reduction of contact resistance was obtained. In addition, electromigration test at a high current density indicated that a significant improvement in mean time to failure (MTF) has been obtained with the barrier.     

Processing of large YBa2 Cu3Ox domains for levitation applications by a Nd1+x Ba2−x Cu3 Oy-Seeded melt-growth technique

YBa₂Cu₃O_x domains for levitation applications have been produced by a seeding technology that includes Nd_1+x Ba_2−x Cu₃O_y seeds and melt-processing technologies such as conventional melt-textured growth, melt-texturing with PtO₂ and Y₂BaCuO₅ additions, and the new solid-liquid-melt-growth technology. Large domains (∼20 mm) with high levitation forces (F₁ up to 8.2 N) have been produced. The reproducibility of the results is good, and the capability of producing a large number of pellets in a single batch indicates good potential for the production of large amounts of this material.     

基于InP衬底的晶格失配In0.68Ga0.32As的MOCVD生长及其特性研究

采用MOCVD生长技术在InP衬底上成功实现了晶格失配的3μm In0.68 Ga0.32As薄膜生长.通过As组分的改变,利用张应变和压应变交替补偿的InAsxP1-x应变缓冲层结构来释放由于晶格失配所产生的应力,在InP衬底上得到了与In0.68Ga0.32 As晶格匹配的InAsxP1-x“虚拟”衬底,通过对缓冲层厚度的优化,使应力能够在“虚拟”衬底上完全豫弛.通过原子力显微镜(AFM)、高分辨XRD、透射电镜(TEM)和光致发光(PL)等测试分析表明,这种释放应力的方法能够有效提高In0.68 Ga0.32 As外延层的晶体质量.     

The effect of Tl2Te3 on the properties of the solid solution (Sb2Te3)0.75.(Bi2Te3)0.25

The effect on transport properties of the addition of 0.5-5% Tl₂Te₃ to p-type solid solutions of antimony and bismuth tellurides was studied. It was found that the addition of Tl₂Te₃ caused a lessening of the increase of hole concentration as low temperatures were approached, resulting in a slower decrease of the Seebeck coefficient with a decrease in temperature. In partial fulfillment of M.Sc. degree, Hebrew University, Jerusalem. Permanent address, Dept. of Inorganic and Analytical Chemistry, Hebrew University, Jerusalem.