Sol-gel法制备Pb(Zr0.53Ti0.47)O3铁电薄膜

利用Sol-gel工艺在Pt/Ti/SiO2/Si衬底上制备了Pb(Zr0.53Ti0.47)O3(PZT)薄膜,研究了退火温度、保温时间和薄膜厚度对其晶相、微观结构和铁电性能的影响.在500℃退火处理的PZT薄膜开始形成钙钛矿相;在550℃退火处理的PZT薄膜基本形成钙钛矿相结构;升高退火温度(500～850℃)、延长保温时间(30～150min)、增加薄膜厚度(120～630nm)都有利于PZT晶粒的长大.在650～750℃退火的PZT薄膜具有较好的铁电性能,保温时间对PZT薄膜的铁电性能影响不大,PZT薄膜的厚度为200～300nm时可以得到比较好的铁电性能.在退火温度750℃、保温时间30min条件下退火处理厚310nm的PZT薄膜,其剩余极化值(2Pr)和矫顽电场(2Ec)分别是72μC/cm2、158kV/cm.     

流延成型法制备2-2型多层(CoFe_2O_4-Pb(Zr_(0.52)Ti_(0.48))O_3)_n磁电复合薄膜

运用流延成型法制备了具有良好铁电铁磁性能的2-2型多层(CoFe_2O_4-Pb(Zr_(0.52)Ti_(0.48))O_3)_n[(CFOPZT)n]磁电复合薄膜。通过X射线衍射仪、扫描电镜、振动样品磁强计和铁电测试仪测试研究了(CFO-PZT)n复合薄膜的组织结构、铁磁和铁电性能。结果表明,钙钛矿结构的PZT和尖晶石结构的CFO相对均匀地分布在多层复合薄膜各层中,界面平整均匀。随热处理温度的升高,薄膜致密度提高,晶粒长大,但相结构未变,无新相形成。900℃热处理的(CFO-PZT)n复合薄膜结晶更完善,磁电性能好,剩余极化强度为32.63μC/cm~2,饱和磁化强度高达80.56kA/m,在2.29×10~4 A/m偏置磁场处有最大磁电耦合系数17.69kV/(cm·T)。     

PHASES AND PROPERTIES OF SYSTEM Pb(Zn_(1/3)Nb_(2/3))O_3—PbTiO_3 —Ba(Ti(0.85)Sn(0.15))O_3

本文合成并研究了Pb(Zn_(1/3)Nb_(2/3))O_3-PbTiO_3-Ba(Ti_(0.85)Sn_(0.15))O_3(PZN-PT-BTS)陶瓷的晶相组成及其介电、压电和铁电性能。Sn~(4+)离子的存在,使PZN-PT-BTS 陶瓷晶粒难以具有完全的钙钛矿结构。微量焦绿石的存在,对其电性能的影响并不很大。PZN-PT-BTS 具有良好的介电、压电和铁电特性。     

Pb(Zn_(1/3)Nb_(2/3)O_3-PbTiO_3-Ba(Ti_(0.85)Sn_(0.15)O_3陶瓷的晶相组成与电性能

本文合成并研究了 Pb(Zn_(1/3)Nb_(2/3))O_3-PbTiO_3-Ba(Ti_(0.85)Sn_(0.15))O_3(PZN-PT-BTS)陶瓷的晶相组成及其介电、压电和铁电性能。Sn~(4+)离子的存在,使 PZN-PT-BTS 陶瓷晶粒难以具有完全的钙钛矿结构。微量焦绿石的存在,对其电性能的影响并不很大。PZN-PT-BTS 具有良好的介电、压电和铁电特性。     

制备工艺对Fe掺杂PZN-PZT热释电陶瓷性能的影响

采用传统氧化物反应法(一步法)和前驱体法(两步法)合成铁掺杂改性的0.075Pb(Zn_(1/3)Nb_(2/3))O_3-0.925Pb(Zr_(0.95)Ti_(0.05))O_3(PZN-PZT)热释电陶瓷,研究制备方法对PZN-PZT热释电陶瓷的微观形貌、相结构及电学性能的影响。XRD结果表明,采用一步法制备的陶瓷不如两步法,前者存在钙钛矿相和少量焦绿石相,后者能有效抑制焦绿石相的生成,陶瓷为纯菱方钙钛矿相。SEM分析进一步证实了两步法能够制备出晶粒分布均匀、晶型饱满的致密陶瓷。结合介电、铁电及热释电性能分析可知,单一钙钛矿结构和均匀紧凑的晶粒结构对陶瓷材料电学性能的增强起着重要的作用。     

MOD法制备的Pb0.985La0.01(Zr0.4Ti0.6)O3

采用金属有机分解法(MOD)在LNO(100)／Si衬底上制备了Pb0．985La0．01(Zr0．4Ti0.6)O3铁电薄膜，在薄膜的快速退火过程中，增加了一个中间温度预退火过程，并研究了该过程对薄膜晶型结构和铁电性能的影响．结果发现，中间温度预退火过程可以影响薄膜对晶型结构的选择．没有中间温度预退火过程的薄膜，显示出(100)择优取向；而经中间温度预退火的薄膜则表现为随机取向．对薄膜铁电性能的研究表明，没有中间温度预退火过程的薄膜的铁电性能较差，经380℃预退火的薄膜显示出最佳的铁电性能．晶型结构取向和缺陷是影响PLZT。薄膜铁电性能的两个主要因素．     

Sol-gel法制备Si基Bi_(3.15)Nd_(0.85)Ti_3O_(12)铁电薄膜

采用Sol-gel法分别在Si(100)和Si(111)衬底上制备Bi_(3.15)Nd_(0.85)Ti_3O_(12)(BNT)铁电薄膜。研究了衬底、退火温度、退火保温时间和薄膜厚度等因素对BNT铁电薄膜结晶和微观结构的影响。在500℃退火的BNT薄膜已经结晶形成层状钙钛矿相;升高退火温度(500～800℃)、延长保温时间(30～150min)、增加薄膜厚度(170～850nm),都有利于BNT薄膜晶粒长大,其中退火温度和薄膜厚度是影响晶粒长大的关键因素;每次涂覆的厚度大约是85nm。与Si(100)衬底相比,由于Si(111)与BNT薄膜具有更好的晶格匹配,因此BNT薄膜在Si(111)衬底上更容易结晶。     

力电多场鼓包法测定PZT铁电薄膜的横向压电系数

为表征Pb(Zr_(0.52)Ti_(0.48))O_3(PZT)薄膜的横向压电性能,以纯力场鼓包测试模型和铁电薄膜材料压电方程为基础,推导了PZT铁电薄膜的力电耦合鼓包本构模型。采用溶胶-凝胶法制备了PZT铁电薄膜,并通过化学腐蚀法获得PZT薄膜鼓包样品。在外加电压为0~14V的条件下进行鼓包测试。结果表明,在纯力场作用下,PZT薄膜的弹性模量和残余应力分别为91.9GPa和36.2MPa;随着电压从2V变化到14V,PZT薄膜的横向压电系数d31从-28.9pm/V变化到-45.8pm/V。本工作所发展的力电耦合鼓包测试技术及力电耦合鼓包本构模型为评价铁电薄膜材料的横向压电性能提供了一种有效的分析方法。     

SrBi_4Ti_4O_(15)陶瓷材料介电和导热性能的研究

用溶胶-凝胶法制备了SrBi_4Ti_4O_(15)陶瓷材料,研究了烧结温度、铋含量及掺杂Nd对SrBi_4Ti_4O_(15)陶瓷结构、热扩散率及介电性能的影响.结果发现,SrBi_4Ti_4O_(15)陶瓷材料的热扩散率和介电常数随烧结温度的升高而增大,最佳烧结温度为1100℃,铋含量过量达10%时,SrBi_4Ti_4O_(15)陶瓷的热扩散率和介电常数最大.随着掺杂量Nd的增加,SrBi_4Ti_4O_(15)陶瓷的热扩散率和介电常数随之增大.     

Pb(Hf_(0.3)Ti_(0.7))O_3铁电薄膜的制备与性能研究

采用脉冲激光沉积方法在不同温度下生长Pb(Hf0.3Ti0.7)O3(PHT)铁电薄膜,利用各种表征手段测试并分析薄膜的微观结构和电性能。研究表明,生长温度为400℃沉积的PHT薄膜具有良好的(111)择优取向;PHT薄膜矫顽场(2Ec)为390 kV/cm,剩余极化强度(2Pr)为53.1μC/cm2,经1.5×109次翻转后剩余极化强度保持85%;PHT薄膜绝缘性能良好,相对介电常数约为540。PHT薄膜有望应用于铁电随机存储器。     

Damping property of epoxy-based composite embedded with sol–gel-derived Pb(Zr<Subscript>0.53</Subscript>Ti<Subscript>0.47</Subscript>)O<Subscript>3</Subscript> thin film

The Pb(Zr_0.53Ti_0.47)O₃ (PZT) thin films were prepared on Pt/Ti/SiO₂/Si substrate by sol–gel method. The effect of the annealing holding time on microstructure, ferroelectric and dielectric properties was investigated. The single-phase PZT films were obtained with different annealing holding time. PZT films annealed for 30–90 min had better dielectric and ferroelectric properties. The epoxy/PZT film/epoxy sandwich composites were prepared, and the annealing holding time of PZT films influenced the damping property of the composites. The epoxy-based composites embedded with PZT films annealed for 90 min had largest damping loss factor of 0.906.     

Damping properties of epoxy-based composite embedded with sol–gel-derived Pb(Zr<Subscript>0.53</Subscript>Ti<Subscript>0.47</Subscript>)O<Subscript>3</Subscript> thin film annealed at different temperatures

Pb(Zr_0.53Ti_0.47)O₃ (PZT) thin films were prepared on Pt/Ti/SiO₂/Si substrate by sol–gel method. The effect of annealing temperature on microstructure, ferroelectric and dielectric properties of PZT films was investigated. When the films were annealed at 550–850 °C, the single-phase PZT films were obtained. PZT films annealed at 650–750 °C had better dielectric and ferroelectric properties. The sandwich composites with epoxy resin/PZT film with substrate/epoxy resin were prepared. The annealing temperature of PZT films influenced their damping properties, and the epoxy-based composites embedded with PZT film annealed at 700 °C had the largest damping loss factor of 0.923.     

铁电（Pb_（0．925）La_（0．075））（Zr_（0．65）Ti_（0

本文对射频磁控溅射制备的（Ｐｂ＿（０．９２５）Ｌａ＿（０．０７５）－（Ｚｒ＿（０．６５）Ｔｉ＿（０．３５））＿（０．９８１）Ｏ＿３薄膜作了ＸＰＳ全扫描和窄扫描能谱分析。结果表明，薄膜的表面缺Ｐｂ是形成ＴＺＯ相的主要原因；随着退火温度的升高，薄膜中钙钛矿相的形成导致各元素的结合能发生位移。     

N掺杂Cu2O薄膜的低温沉积及快速热退火研究

采用氧化亚铜(Cu_2O)陶瓷靶,利用射频磁控溅射沉积法在氮气和氩气的混合气氛下制备了N掺杂Cu_2O(Cu_2O∶N)薄膜,并在N_2气氛下对薄膜进行了快速热退火处理,研究了N_2流量和退火温度对Cu_2O∶N薄膜的生长行为、物相结构、表面形貌及光电性能的影响。结果显示,在衬底温度300℃、N_2流量12sccm条件下生长的薄膜为纯相Cu_2O薄膜;在N_2气氛下对预沉积薄膜进行快速热退火处理不影响薄膜的物相结构,薄膜的结晶质量随退火温度(450℃)的升高而显著改善;快速热退火处理能改善薄膜的结晶质量和缺陷,降低光生载流子的散射,增强载流子的传输,预沉积Cu_2O∶N薄膜经400℃退火处理后展示出较好的电性能,薄膜的霍尔迁移率(μ)为27.8cm~2·V~(-1)·s~(-1)、电阻率(ρ)为2.47×10~3Ω·cm。研究表明低温溅射沉积和快速热退火处理能有效改善Cu_2O∶N薄膜的光电性能。     

Role of late transition metals on pitting resistance of Zr-Ti-(Cu,Ni,Co)-Al bulk metallic glasses in 0.6 M NaCl aqueous solution

Four quanternary Zr-based bulk metallic glasses(BMGs)were selected,including the Zr_(46)Ti_2Cu_(45)Al_7,Zr_(61)Ti_2Cu_(25)Al_(12),Zr_(55)Ti_4Ni_(22)Al_(19)and Zr_(55)Ti_2Co_(28)Al_(15),due to their robust glass-forming ability and containing a single species of late transition metal(LTM)in compositions.Their pitting resistances in 0.6 M Na Cl aqueous solution were investigated to examine the role of LTM elements in the alloys,with electrochemical measurements,surface morphology observation and x-ray photoelectron spectrometry analysis.It is shown that in comparision with two Cu-bearing BMGs,Zr_(55)Ti_4Ni_(22)Al_(19)and Zr_(55)Ti_2Co_(28)Al_(15)BMGs exhibited significantly superior resistance to pitting.Zr_(61)Ti_2Cu_(25)Al_(12),Zr_(55)Ti_4Ni_(22)Al_(19)and Zr_(55)Ti_2Co_(28)Al_(15)BMGs manifested distinct passivation behaviour,because of the formation of surface passive film mainly comprising of Zr O_2,Ti O_2and Al_2O_3.However,no significant differences in the electrochemical resistive properties and thicknesses of passive films were found between Zr_(61)Ti_2Cu_(25)Al_(12)and Zr_(55)Ti_4Ni_(22)Al_(19)BMGs.Nevertheless,at the passive film/metal interface,copper enrichment took place in Zr_(61)Ti_2Cu_(25)Al_(12),whereas the nickel was slightly deficient at the interface in Zr_(55)Ti_4Ni_(22)Al_(19).During pitting propagation,selective dissolution of the zirconium,titanium and aluminum over the copper took place in Zr_(61)Ti_2Cu_(25)Al_(12),but it was not the case in Zr_(55)Ti_4Ni_(22)Al_(19).For the two Cu-bearing BMGs,reduction of passive base metal elements in composition resulted in local selective dissolution,even absence of the passivation.     

0.94[(Na0.96-xKxLi0.04)0.5Bi0.5]TiO3-0.06Ba(Zr0.055Ti0.945)O3无铅压电陶瓷的压电介电特性

对无铅压电陶瓷0.94[(Na0.96-xKxLi0.04)0.5Bi0.5]TiO3-0.06Ba(Zr0.055Ti0.945)O3的性质随K含量的变化进行了系统研究,获得压电应变常数d33高达185pC/N的0.94[(Na0.80K0.16Li0.04)0.5-Bi0.5]TiO3-0.06Ba(Zr0.055Ti0.945)O3压电陶瓷.随着K掺杂量的增加,该陶瓷材料的介电温谱峰值向右明显移动,其介电峰温度明显升高.     

Effect of microwave annealing temperatures on lead zirconate titanate thin films

Lead zirconate titanate (Pb(1.1)(Zr(0.52)Ti(0.48))O(3)) thin films of thickness 260?nm on Pt/Ti/SiO(2)/Si substrates were densified by 2.45?GHz microwave annealing. The PZT thin films were annealed at various annealing temperatures from 400 to 700?°C for 30?min. X-ray diffraction showed that the pyrochlore phase was transformed to the perovskite phase at 450?°C and the film was fully crystallized. The secondary (again pyrochlore) phase was observed in the PZT thin films, which were annealed above 550?°C. The surface morphologies were changed above 550?°C of the PZT thin films due to the secondary phase. Higher dielectric constant (ε(r)) and lower dielectric loss coercive field (E(c)) were achieved for the 450?°C film than for the other annealed films.     

FeCoZrNbB合金的晶化过程及磁性能

采用单辊快淬法制备Fe_81-xCo_xZr₇Nb₂B₁₀(x = 2, 4, 6) 系非晶合金,并对该系非晶合金进行热处理。利用X射线衍射和振动样品磁强计研究FeCoZrNbB 合金系的晶化过程和磁性能。结果表明,Fe_81-xCo_xZr₇Nb₂B₁₀(x = 2, 4, 6) 系合金在快淬速率为30 m/s时完全形成非晶。Fe₇₉Co₂Zr₇Nb₂B₁₀合金的晶化过程为非晶→非晶+α-Fe→α-Fe + Fe₃Zr + Fe₂Nb_0.4Zr_0.6;Fe₇₇Co₄Zr₇Nb₂B₁₀与Fe₇₅Co₆Zr₇Nb₂B₁₀合金的晶化过程相同为非晶→非晶+α-Fe→ α-Fe + Fe₃Zr →α-Fe + Fe₃Zr + Fe₂Nb_0.4Zr_0.6。Co 含量的增加抑制了退火后α-Fe晶相的形核,并促使Fe 3Zr化合物更易析出。Fe_81-xCo_xZr₇Nb₂B₁₀(x = 2, 4, 6) 合金的比饱和磁化强度( M_s) 和矫顽力 ( H_c) 随退火温度的变化趋势相同。530℃ 之前退火,随退火温度的升高M s增加并不明显 ; 530℃之后退火,M_s迅速上升。530℃ 退火,H_c达到最小值;高于530℃ 退火,H_c随退火温度的升高而增加。      

Growth mechanism of chemical solution derived PZT films on MgO(100) substrate

PZT (Zr : Ti = 0.53 : 0.47) thin films were fabricated by chemical solution deposition with metal naphthenates used as starting materials. Effect of final annealing temperature on epitaxy and surface morphology of the films were investigated. PZT films prefired at 200°C were crystallized to be highly (00l)/(h00)-oriented at final annealing temperatures of 750°–800°C. The film annealed at 750°C was smooth and no distinct texture was exhibited, while the rosette-type microstructure caused by lead volatilization was observed in the films after annealing at 800°C.     

直流磁控反应溅射制备IrO2薄膜

为研究氧化依（ＩｒＯ_２）对ＰＺＴ铁电薄膜疲劳性能的影响,利用直流（ＤＣ）磁控反应溅射（ｓｐｕｔｔｅｒｉｎｇ）工艺成功地在ＳｉＯ_２／Ｓｉ（１００）衬底上制得了高度取向的ＩｒＯ_２薄膜．并在其上制成ＰＺＴ铁电薄膜．讨论了溅射参数（溅射功率、 Ａｒ／Ｏ_２比、衬底温度）以及退火条件对氧化铱薄膜的结晶、取向和形态的影响．