Electrical characterisation of SrTiO3/Si interfaces

Deposition of SrTiO₃ (STO) thin films by ultra-high vacuum rf magnetron sputtering was performed in order to produce high-quality STO/p-Si (1 0 0) interfaces and STO insulator layers with high dielectric constants. The deposition temperatures were in the range from room temperature to 550 °C. Capacitance-voltage (C-V) and conductance-frequency measurements showed that the dielectric constant of the films ranges from 55 to 120. C-V measurements on Al/STO/p-Si structures clearly revealed the creation of metal-insulator-semiconductor diodes. The interface state densities (D_it) at the STO/p-Si interfaces were obtained from admittance spectroscopy measurements. The samples deposited at lower temperatures revealed values of D_it between 2×10¹¹ and 3.5×10¹² eV⁻¹ cm⁻² while the higher temperature deposited samples had a higher D_it ranging between 1×10¹¹ and 1×10¹³ eV⁻¹ cm⁻². The above results were also well correlated to X-ray diffraction measurements, Rutherford backscattering spectroscopy, and spectroscopic ellipsometry.     

Atomic layer deposition of Al2O3, ZrO2, Ta2O5, and Nb2O5 based nanolayered dielectrics

Ta₂O₅, Ta-Nb-O, Zr-Al-Nb-O, and Zr-Al-O mixture films or solid solutions were grown on Si(1 0 0) substrates at 300 °C by atomic layer deposition. The equivalent oxide thickness of Ta₂O₅ based capacitors was between 1 and 3 nm. In Zr-Al-O films, the high permittivity of ZrO₂ was combined with high resistivity of Al₂O₃ layers. The permittivity, surface roughness and interface charge density increased with the Zr content and the equivalent oxide thickness was between 2.0 and 2.5 nm. In the Zr-Al-Nb-O films the equivalent oxide thickness remained at 1.8-2.0 nm.     

Interface and material characterization of thin Al2O3 layers deposited by ALD using TMA/H2O

Thin Al₂O₃ layers were grown by atomic layer deposition using trimethylaluminum (TMA) and water as precursors on 1.2 nm thermal SiO₂ and HF cleaned Si surfaces. The stoichiometry and the contamination (H, OH and C) of as-deposited and N₂ annealed thick Al₂O₃ layers were characterized by secondary ion mass spectrometry (SIMS), elastic recoil detection analysis (ERDA) and X-ray photoelectron spectroscopy (XPS). We show a perturbed region (≈5 nm thick) at the Al₂O₃/Si interface by XPS and Auger electron spectrometry (AES). Post-deposition annealings induced important interface oxidation, Si atoms injection and SiO₂/Al₂O₃ mixture whereas the initial interface was abrupt. Silicon oxidation before Al₂O₃ growth highly limits interfacial oxidation and improves interfacial quality. We proposed that OH groups may play a key role to explain silicon oxidation during post-deposition annealings in inert ambience with low oxygen contamination levels.     

Growth and characterization of nanostructured Al2O3/YAG/ZrO2 hypereutectics with large surfaces under laser rapid solidification

The preparation of large bulk oxide eutectics with homogeneous and dense structure in nano-scale by melt growth method is a difficult challenge. Fully dense, homogeneous and crack-free ternary nanostructured Al₂O₃/YAG/ZrO₂ hypereutectic plate with large surface is successfully obtained by laser remelting. The hypereutectic in selected composition presents an ultra-fine eutectic-like microstructure consisting of alternating interpenetrating Al₂O₃, YAG and ZrO₂ lamellae with mean interphase spacing of about 150 nm, which is much smaller than the ternary eutectic composition grown at the same growth conditions. With the increase of laser scanning rate, the lamellar spacing is rapidly decreased. The minimum value obtained is 50 nm. The analysis indicates that the strong faceted growth behavior and cooperative branching of the component phases related with high entropies of fusion and large kinetic undercooling during laser rapid solidification are the primary formation reasons for the irregular eutectic growth morphology. Furthermore, the unique cellular microstructure with complex structure is also observed at high growth rate, and their formation mechanism and effect of the composition on the microstructure are discussed.     

Toughened glass-ceramics containing ZrO2 and Al2O3 prepared by the sol-gel process from metal alkoxides

Glasses of compositions 5ZrO₂·5SiO₂(ZS), 5ZrO₂·Al₂O₃·4SiO₂(ZAS) and 5 5ZrO₂·0.5Al₂O₃·0.5Na₂O·4SiO₂(ZANS) were prepared by the sol-gel process from metal alkoxides and sintered to make glass-ceramics. Tetragonal ZrO₂ was precipitated by heat treatment at 900 to 1300°C. The activation energy for tetragonal ZrO₂ crystal growth was extremely high in Al₂O₃ containing glasses. ZAS and ZS were sintered to the near theoretical densities above 1200°C, at which the predominant phase was tetragonal ZrO₂. On the other hand, for ZANS, high densification was not attained owing to the large pores enclosed by the glass phase. Strength and fracture toughness increased with the densification and the crystal growth of tetragonal ZrO₂, reaching 450 MPa and 9 MN/m^1.5, respectively.     

Quenched glasses in the systems of Li2O with Al2O3, Ga2O3 and Bi2O3

By rapid quenching in a twin roller apparatus, glass was found to occur widely in the systems of Li₂O with Al₂O₃, Ga₂O₃, Bi₂O₃ and in mixed systems. Examination of the resulting flakes by X-ray powder diffraction, differential thermal analysis, and capacitance data revealed the occurrence of glass, glass transitions, crystallization exotherms and the nature of some of the crystallization paths.The log ionic conductivity of the glasses was found to follow a linear relationship with the Li concentration. Evidence was observed for three new metastable crystalline phases, one in the Li₂OAl₂O₃ system and two in the Li₂OBi₂O₃ system. The latter system also showed evidence for the occurrence of two glasses at almost all compositions.     

Supercritical fluctuations in the B2O3PbOAl2O3 system

A small-angle X-ray diffraction study of the supercritical region of the B₂O₃PbOAl₂O₃ immiscibility surface is presented. This is the first time that diffraction methods have been applied to the study of critical opalescence in a system of oxides at high temperatures. Debye's theory is shown to be applicable and, from the spectra correlation lengths and the range of molecular interactions l is calculated. The topography of the supercritical region is determined and the relationship between l and the main interatomic distances in the melt discussed.     

Precipitation of In2O3 nano-crystallites from glasses in the system Na2O/B2O3/Al2O3/In2O3

Glasses in the system Na₂O/B₂O₃/Al₂O₃/In₂O₃ were melted and subsequently tempered in the range from 500 to 700 °C. Depending on the chemical composition, various crystalline phases were observed. From samples without Al₂O₃, In₂O₃ could not be crystallized from homogeneous glasses, because either spontaneous In₂O₃ crystallization occurred during cooling, or other phases such as NaInO₂ were formed during tempering. The addition of alumina, however, controlled the crystallization of In₂O₃. Depending on the crystallization temperature applied, the crystallite sizes were in the range from 13 to 53 nm. The glass matrix can be dissolved by soaking the powdered glass in water. This procedure can be used to prepare nano-crystalline In₂O₃-powders.     

Electrical properties of Al2O3 film deposited at low temperatures

Amorphous Al₂O₃ films were deposited on p-Si by rf magnetron sputtering to investigate their potential as a gate dielectric in organic thin film transistors (OTFTs). The deposition was performed at room temperature, 200 and 300 °C using Al₂O₃ and Al targets. Achieved Al₂O₃ films have higher capacitance values than thermally grown SiO₂ as characterized by capacitance-voltage measurements. It is also found from current-voltage and roughness measurements that the leakage current and the surface roughness can be least when the films are deposited at room temperature. The capacitance of the film obtained from the Al₂O₃ target appears higher than that of the Al₂O₃ film from the Al target while the results of electrical breakdown are opposite. These room temperature processes are promising for applications to the gate dielectrics of organic TFTs.     

Al2O3-TiO2 and Al2TiO5 ceramic materials by the sol-gel process

Ceramic materials with a very low thermal expansion coefficient are synthesized by the sol-gel process. The binary gel is obtained by hydrolysis and polycondensation reactions of organometallic compounds of aluminium and titanium. The thermal evolution of the amorphous powder is followed by DTA and TGA measurements. Structural evolution is followed using X-ray diffraction. The crystallization of the TiO₂ rutile and Al₂O₃ corindon starts at 700 and 900°C respectively. The transformation of Al₂O₃ and TiO₂ into Al₂TiO₅ appears between 1200 and 1300°C. The densification of the powder is performed by the hot pressing process. The shrinkage of the powder was previously followed by dilatometric measurements. The physical properties of the final material are studied as a function of pressing parameters.     

Effect of Al2O3 on phase separation of SiO2-Nd2O3 glasses

The immiscibility boundary and the critical point of SiO₂-Nd₂O₃ system glass were determined as a function of Al₂O₃ addition. The critical temperature of the immiscibility boundary was observed to decrease with the addition of Al₂O₃. Using the regular solution model, the observed decrease of the immiscibility boundary was directly related to the decrease of the concentration fluctuation of Nd₂O₃ in SiO₂. It is concluded that the Al₂O₃ addition to Nd₂O₃ containing silica glass is beneficial in decreasing the concentration quenching effect, deterioration of the optical efficiency due to clustering of rare earth element, because Al₂O₃ addition diminishes the concentration fluctuation of Nd₂O₃ in silica glass.     

Ionic conductivity of Li2O-BaO-Bi2O3 glasses

Dc and ac conductivities of Li₂O-BaO-Bi₂O₃ glasses have been studied in a temperature range of 263-523 K and a frequency range of 10 Hz-2 MHz and have been compared with those of binary Li₂O-Bi₂O₃ glasses. The frequency dependent conductivity has been studied employing both the modulus and conductivity formalisms. We have observed small changes in the dc conductivity and its activation energy from those of the binary glass when content of BaO is small. However we have observed noticeable changes in the conductivity and the activation energy when BaO content is large. The significant changes in the values of the non-exponential parameter and the power-law exponent of the ac electrical properties have been observed due to introduction of BaO in the lithium bismuthate glasses. The existing relation between the power-law exponent and the non-exponential parameter was also violated in the present glass compositions.     

Effect of Al2O3 on phase separation and crystallization in ZnO---Al2O3---B2O3---SiO2 glasses

The effect of alumina on the phase separation and the crystallization of the glasses of composition (mol%) 18ZnO·30B₂O₃·52SiO₂ and O-40 Al₂O₃ was studied using an electron microscope and IR spectroscopy. The main crystalline phase appears in the microphase for which the compositions are not nearer to the crystal stoichiometry than the mean. The addition of Al₂O₃ suppresses the immiscibility but enhances the crystallizability.     

Structural investigations of copper doped B2O3-Bi2O3 glasses with high bismuth oxide content

Raman and infrared spectroscopy have been employed to investigate the 99.5%[xB₂O₃(1−x)Bi₂O₃]0.5%CuO glasses with different Bi/B nominal ratios (0.07?x?0.625) in order to obtain information about the competitive role of B₂O₃ and Bi₂O₃ in the formation of the glass network. The glass samples have been prepared by melting at 1100 °C and rapidly cooling at room temperature. In order to relax the structure, to improve the local order and to develop crystalline phases the glass samples were kept at 575 °C for 10 h. The influence of both Bi₂O₃ and CuO on the vitreous B₂O₃ network as well as the local order changes around bismuth and boron atoms in as prepared and heat treated samples was studied. Structural modifications occurring in heat treated samples compared to the untreated glasses have been observed.     

Local structure of liquids Al2O3 and GeO2 under densification

Molecular dynamic simulation has been conducted to study the local structure of liquid Al₂O₃ and GeO₂ under densification. Those liquids are found to be a mixture of species of TO_x. Here T is Ge or Al and x = 4, 5 and 6. This result is supported by the fact that the density, fraction of oxygen connectivity and volume of different void kinds are a linear function of TO_x fraction. The microscopic mechanism of liquid densification is quantified and interpreted in term of the change in TO_x fraction.     

Nano-crystallization in LaF3–Na2O–Al2O3–SiO2 glass

Aiming at tailoring optical properties, the precipitation of LaF₃ nano-crystals in LaF₃–Na₂O–Al₂O₃–SiO₂ glass-ceramics is studied thoroughly on the nano-scale using advanced transmission electron microscopic techniques. Nano-sized phase-separation droplets enriched in lanthanum and silicon are formed already in the base glass. Within these less than 20 nm large droplets, LaF₃ crystallizes upon heat treatment. The nano-crystallization mechanism revealed is self-limited since growth is restricted by the size of the droplets. An average crystallite size of around 12 nm is achieved with a narrow size distribution since the phase-separation droplets also contain silicon not incorporated into the growing crystal. Instead, excess silicon relocated to the periphery of the pre-existing phase-separation droplets forms a diffusion barrier around the LaF₃ nano-crystals preventing further crystal growth and/or ripening.     

Glass formation and crystallization in the ZrO2---Al2O3---P2O5 system

The glass formation of the ZrO₂---Al₂O₃---P₂O₅ system in the high phosphate region is determined. The crystallization process and the crystal types formed during heat treatment have been studied. The structure of these glasses is discussed.     

Characterization of ALCVD-Al2O3 and ZrO2 layer using X-ray photoelectron spectroscopy

The atomic layer chemical vapor deposition (ALCVD) deposited Al₂O₃ and ZrO₂ films were investigated by ex situ X-ray photoelectron spectroscopy. The thickness dependence of band gap and valence band alignment was determined for these two dielectric layers. For layers thicker than 0.9 nm (Al₂O₃) or 0.6 nm (ZrO₂), the band gaps of the Al₂O₃ and ZrO₂ films deposited by ALCVD are 6.7±0.2 and 5.6±0.2 eV, respectively. The valence band offsets at the Al₂O₃/Si and ZrO₂/Si interface are determined to be 2.9±0.2 and 2.5±0.2 eV, respectively. Finally, the escape depths of Al 2p in Al₂O₃ and Zr 3p3 in ZrO₂ are 2.7 and 2.0 nm, respectively.     

Growth anisotropy in the GaN/Al2O3 system

The crystallographic aspect of gallium nitride epitaxy on sapphire were investigated for the vapor phase epitaxy system GaCl/NH₃/HCl/N₂. For this purpose, thick layers of doped gallium nitride were deposited on hemispheres of Al₂O₃ single crystal with the three fold axis of the corundum structure perpendicular to the basal plane. Complete characterization of these layers has been carried out including Laue back diffraction, scanning electron microscopy and cathodoluminescence. After growth, sections were cut along the main crystallographic planes and the growth rate was measured as a function of the substrate orientation. The observed relationship for epitaxy has been interpreted in terms of three-dimensional matching between the gallium nitride and corundum structures.     

Study of the structural insertion of Al in the Al2O3-SiO2 and Nd2O3-Al2O3-SiO2 glass systems

Glasses in the Al₂O₃-SiO₂ and Nd₂O₃-Al₂O₃-SiO₂ systems were prepared by the sol-gel method. The gel-glass evolution was studied using near-infrared (NIR) and ultraviolet-visible (UV-VIS) spectrophotometry, X-ray diffraction (XRD), scanning electron microscopy (SEM), Fourier infrared spectroscopy (FTIR) and nuclear magnetic resonance spectroscopy (NMR). The results obtained indicate a relationship between the sample compositions, the treatment temperature and the Al coordination. In the samples of the Nd₂O₃-Al₂O₃-SiO₂ system the densification of the structure, when the treatment temperature increases, leads to the segregation of neodymium oxide particles.