An asymmetric broad waveguide structure for a 0.98-μm high-conversion-efficiency diode laser

A novel asymmetric broad waveguide diode laser structure was designed for high power conversion efficiency (PCE). The internal quantum efficiency, the series resistance, and the thermal resistance were theoretically optimized. The series resistance and the thermal resistance were greatly decreased by optimizing the thickness of the P-waveguide and the P-cladding layers. The internal quantum efficiency was increased by introducing a novel strain-compensated GaAs0.9P0.1/InGaAs quantum well. Experimentally, a single 1-cm bar with 20% fill factor and 900 μm cavity length was mounted P-side down on a microchannel-cooled heatsink, and a peak PCE of 60% is obtained at 26.3-W continuous wave output power. The results prove that this novel asymmetric waveguide structure design is an efficient approach to improve the PCE.     

用于半导体激光器的高效率复合波导结构

提出了一种高电光转换效率的新型复合波导半导体激光器结构（Composite Waveguide LD,CWG LD）。该器件结构高的电光转换效率得益于其所采用的Al组分阶梯分布AlxGa1-xAs波导层。通过优化设计波导层电阻率分布及能带分布,CWG LD结构在保证输出光功率的同时,可以有效地降低器件串联电阻并提高电光转换效率。结合理论分析及计算机数值仿真软件,分析了复合波导提升器件电光转换效率的机理。经优化,在激光器条宽为6 m、腔长为1 000 m的情况下,波导层阶梯数为1时CWG LD结构可以获得最大的电光转换效率。研究结果表明:在注入电流为900 mA时,CWG LD结构的串联电阻由常规波导器件结构的3.51 降低为2.67 ,电光转换效率由54.7%提升至69.5%。     

高效率连续1 000 W半导体激光器叠层阵列

采用低压MOCVD外延技术生长的GaInAs/AlGaAs应变量子阱大光腔结构材料结构设计,利用低压MOCVD外延技术生长了3英寸(75 mm)激光器外延片,进而设计制作了976 nm大功率低热阻连续激光器芯片。采用以及高热导率的无氧铜材料设计制作了大功率微通道热沉,采用In焊料芯片倒装烧结工艺,制作了976 nm连续激光器阵列单条。在20℃水冷条件下,输入电流120 A,工作电压1.51 V,输出功率达到118 W,电光功率转换效率约65%。将10只微通道阵列单条堆叠组装,制作了连续1 000 W微通道叠层阵列。在20℃水冷条件下,输入电流120 A,输出功率达到1 130 W,工作电压1.45 V,电光功率转换效率约65%。     

高效率1.06 μm波段大功率半导体激光列阵模块

采用 InGaAs/InGaAsP应变量子阱折射率分别限制(SCH)宽波导结构结合优化欧姆接触减小串联电阻的方法,制作出高效率大功率1.06 μm波段半导体激光列阵模块.激光芯片宽1 cm,腔长1 200 μm,条宽200 μm,填充密度为50%;室温连续输出功率为50.2 W时光电转换效率达到56.9%.