Interface reconstruction in the Ga<Subscript>2</Subscript>Se<Subscript>3</Subscript>/GaAs(100) and In<Subscript>2</Subscript>Se<Subscript>3</Subscript>/InAs(100) nanoheterostructures

The surface of GaAs(100) and InAs(100) substrates thermally treated in selenium vapor has been investigated by transmission electron microscopy (TEM) and reflection high-energy electron diffraction. Transmission electron microscopy and high-energy electron diffraction data on these heterostructures confirms the epitaxial pseudomorphic growth of the gallium selenide Ga₂Se₃(100) and indium selenide In₂Se₃(100) phases with ordered stoichiometric cation vacancies. A model of the atomic structure of the Ga₂Se₃(100) and In₂Se₃(100) surfaces is proposed, and the 2 × 2 reconstruction of the GaAs(100) and InAs(100) surfaces after treatment in selenium vapor is discussed within this model.     

Growth and structure of La<Subscript>3</Subscript>Zr<Subscript>0.5</Subscript>Ga<Subscript>5</Subscript>Si<Subscript>0.5</Subscript>O<Subscript>14</Subscript> crystals

The complete X-ray structure determination of Czochralski grown La₃Zr_0.5Ga₅Si_0.5O₁₄ single crystals with the Ca₃Ga₂Ge₄O₁₄ structure is performed (sp. gr. P321, a = 8.226(1) Å, c = 5.1374(6) Å, Z = 1, Mo K_α1 radiation, 1920 crystallographically independent reflections, R = 0.0166, R_w = 0.0192). The absolute structure is determined. It is shown that possible transition of some of La atoms (～1.2%) from the 3e to 6g position may give rise to the formation of structural defects.     

X-ray analysis of multilayer In<Subscript>0.52</Subscript>Al<Subscript>0.48</Subscript>As/In<Subscript>0.53</Subscript>Ga<Subscript>0.47</Subscript>As/In<Subscript>0.52</Subscript>Al<Subscript>0.48</Subscript>As HEMT heterostructures with InAs nanoinsert in quantum well

In_0.52Al_0.48As/In_0.53Ga_0.47As/In_0.52Al_0.48As HEMT heterostructures on InP substrates with elastically strained InAs insert in combined quantum well (QW) have been investigated using a combination of X-ray methods: double-crystal X-ray diffraction, X-ray reflectivity, and reciprocal space mapping. This approach has provided detailed complementary information about the layered and real crystal structures of the samples. The data obtained have made it possible to perform structural analysis of the multilayer systems and compare their characteristics with specified technological parameters, due to which the HEMT growth technology can be corrected and improved.     

Accurate crystal structure refinement of La<Subscript>3</Subscript>Ta<Subscript>0.25</Subscript>Ga<Subscript>5.25</Subscript>Si<Subscript>0.5</Subscript>O<Subscript>14</Subscript>

An accurate X-ray diffraction study of an La₃Ta_0.25Ga_5.25Si_0.5O₁₄ single crystal has been performed using two data sets obtained independently for the same sample in different orientations on a diffractometer with a 2D CCD detector. This structure was refined with an averaged set of these data (a = 8.1936(15) Å c = 5.1114(6) Å, sp. gr. P321, Z = 1, R/wR = 0.75/0.71%, 4030 independent reflections). This analysis was aimed at determining the character of the occupancies of the cation position in the structure. The octahedra at the origin of coordinates turned out to be statistically occupied by gallium and tantalum ions of similar sizes, whereas the tetrahedra on the threefold symmetry axes are occupied by gallium and silicon whose ionic radii differ significantly. The latter circumstance caused the splitting of oxygen positions and made it possible to reliably establish the structural position of statistically located [SiO₄] and [GaO₄] tetrahedra of different sizes.     

Absolute structure of La<Subscript>3</Subscript>Ga<Subscript>5</Subscript>SiO<Subscript>14</Subscript> langasite crystals

The absolute structure of La₃Ga₅SiO₁₄ piezoelectric crystals (a = 8.1746(6) Å, c = 5.1022(4) Å, space group P321, Z = 1) with the positive sense of rotation of the plane of polarization is refined using X-ray diffraction analysis (R = 1.37%, R _w = 1.71%, 2413 unique reflections, max sinθ/λ = 1.15 Å^?1). The contributions from the anharmonicity of thermal vibrations of lanthanum atoms are calculated with the use of the components of the third-and fourth-rank tensors. It is demonstrated that these contributions can have a significant effect.     

Phase transitions in compounds with the Ca<Subscript>3</Subscript>Ga<Subscript>2</Subscript>Ge<Subscript>4</Subscript>O<Subscript>14</Subscript> structure

Possible structural changes described by the group-subgroup relationships in the Ca₃Ga₂Ge₄O₁₄-type structure (sp. gr. P321) are considered. The most probable phase transitions seem to be those accompanied by lowering of the symmetry to the maximal non-isomorphic subgroups P3 and C2. It is shown that only destructive phase transitions accompanied by symmetry rise up to the minimal non-isomorphic supergroups for the given structure type can take place. The change of the trigonal symmetry to monoclinic is revealed in La₃SbZn₃Ge₂O₁₄, whose crystal structure is refined as a derivative structure of the Ca₃Ga₂Ge₄O₁₄ structure type within the sp. gr. A2 (C2). At ～250°C, La₃SbZn₃Ge₂O₁₄ undergoes a reversible phase transition accompanied by symmetry rise, A2 ? P321. Similar phase transitions, P321 ? A2, are also observed in La₃Nb_0.5Ga_5.5O₁₄ and La₃Ta_0.5Ga_5.5O₁₄ under the hydrostatic pressures 12.4(3) and 11.7(3) GPa, respectively. The mechanisms of compression and phase transition are based on the anisotropic compressibility of a layer structure. With the attainment of the critical stress level in the structure, the elevated compressibility in the (ab) plane gives rise to a phase transition accompanied by the loss of the threefold axis. Attempts to reveal low-temperature phase transitions in a number of representatives of the langasite family have failed.     

Effect of ultrasound on the growth striation and electrical properties of Ga<Subscript>0.03</Subscript>In<Subscript>0.97</Subscript>Sb single crystals

The growth striation of impurity segregation and electrical properties of Ga_0.03In_0.97Sb single crystals grown by the Czochralski method in an ultrasonic field have been investigated. It is established that ultrasonic irradiation of the melt during growth significantly decreases the growth striation (in particular, it eliminates striations spaced at a distance of more than 14 μm). The Ga_0.03In_0.97Sb single crystals grown in an ultrasonic field had a higher charge-carrier mobility and thermoelectric power in comparison with the single crystals grown without ultrasound.     

Crystal structure of the Ca<Subscript>3</Subscript>TaGa<Subscript>3</Subscript>Si<Subscript>2</Subscript>O<Subscript>14</Subscript> compound

The absolute crystal structure of the Ca₃TaGa₃Si₂O₁₄ piezoelectric compound is refined using X-ray diffraction analysis. The unit cell parameters and final R factors are as follows: a = 8.112(1) Å, c = 4.9862(6) Å, space group P321, Z = 1, R = 0.98%, and R _w = 1.42%. It is shown that the configuration of the absolute crystal structure inherited from the seed material determines the positive sense of the optical activity of the crystal under investigation. The structural and acoustical characteristics of the Ca₃TaGa₃Si₂O₁₄ crystals are compared with those of the La₃Ga₅SiO₁₄ crystals.     

Crystal structure refinement of Sr<Subscript>3</Subscript>TaGa<Subscript>3</Subscript>Si<Subscript>2</Subscript>O<Subscript>14</Subscript>

An accurate X-ray diffraction study of Sr₃TaGa₃Si₂O₁₄ (STGS) crystal (a = 8.3023(10) Å, c = 5.0853(2) Å, sp. gr. P321, Z = 1, R/wR = 0.59/0.52%, 4004 independent reflections) is performed. The use of two independent data sets obtained on diffractometers with point and 2D detectors made it possible to determine the model structure characterized by the best reproducibility of parameters. The ordered distribution of atoms over crystallographic positions and the anharmonic character of displacements of all cations and one oxygen atom are established.     

Epitaxial low-temperature growth of In<Subscript>0.5</Subscript>Ga<Subscript>0.5</Subscript>As films on GaAs(100) and GaAs(111)<Emphasis Type="Italic">A</Emphasis> substrates using a metamorphic buffer

A complex investigation of epitaxial In_0.5Ga_0.5As films grown on GaAs substrates with crystallographic orientations of (100) and (111)A in the standard high- and low-temperature modes has been performed. The parameters of the GaAs substrate and In_0.5Ga_0.5As film were matched using the technology of step-graded metamorphic buffer. The electrical and structural characteristics of the grown samples have been studied by the van der Pauw method, atomic force microscopy, scanning electron microscopy, and transmission/ scanning electron microscopy. The surface morphology is found to correlate with the sample growth temperature and doping with silicon. It is revealed that doping of low-temperature In_0.5Ga_0.5As layers with silicon significantly reduces both the surface roughness and highly improves the structural quality. Pores 50–100 nm in size are found in the low-temperature samples.     

Crystal structure of Rb<Subscript>2</Subscript>[Ti(VO<Subscript>2</Subscript>)<Subscript>3</Subscript>(PO<Subscript>4</Subscript>)<Subscript>3</Subscript>]

The crystal structure of the new compound Rb₂[Ti(VO₂)₃(PO₄)₃] obtained by hydrothermal synthesis in the RbCl-TiPO₄-V₂O₅-B₂O₃-H₂O system (a = 13.604(2) Å, c = 9.386(2) Å, sp. gr. P6cc, Z = 4, ρ_calcd = 3.32 g/cm³) has been studied by X-ray diffraction (Xcalibur-S-CCD diffractometer, R = 0.038). It is shown that the isotypism of Rb₂[Ti(VO₂)₃(PO₄)₃] and Cs₂[Ti(VO₂)₃(PO₄)₃] is caused by the flexibility of a mixed anionic framework composed of phosphorus tetrahedra, vanadium five-vertex polyhedra, and titanium octahedra (bases of the crystal structures of these compounds). The topological correlations between the structures of titanium-vanadyl phosphates and benitoite and beryl silicates are analyzed.     

Crystal-structure refinement of Sr<Subscript>3</Subscript>Ga<Subscript>2</Subscript>Ge<Subscript>4</Subscript>O<Subscript>14</Subscript>

The accurate X-ray diffraction study of a Sr₃Ga₂Ge₄O₁₄ crystal was performed based on two X-ray diffraction data sets collected on a diffractometer equipped with a CCD area detector (a = 8.2776(2), c = 5.0415(1) Å, sp. gr. P321, Z = 1, R/wR = 0.78/0.69%, 3645 independent reflections). The structure of Sr₃Ga₂Ge₄O₁₄ is characterized by the presence of two mixed cation sites, which is accompanied by the anharmonic motion not only of cations, but also of two oxygen atoms in general positions. The structures and electromechanical characteristics of Sr₃Ga₂Ge₄O₁₄ and Sr₃TaGa₃Si₂O₁₄ were compared. The Sr₃Ga₂Ge₄O₁₄ structure is characterized by a larger elongation of the Sr polyhedron along the a axis and, simultaneously, by the smaller unit-cell parameter a compared with Sr₃TaGa₃Si₂O₁₄, which correlates with the ratio of the piezoelectric coefficients d ₁₁. The absence of thermally stable directions in the crystals of Sr₃Ga₂Ge₄O₁₄ and Sr₃TaGa₃Si₂O₁₄ is consistent with the absence of the anomalous temperature dependence of the dielectric constant ?₃₃.     

Crystal structure and microtwinning of monoclinic La<Subscript>3</Subscript>SbZn<Subscript>3</Subscript>Ge<Subscript>2</Subscript>O<Subscript>14</Subscript> crystals of the langasite family

The crystal structure of monoclinic La₃SbZn₃Ge₂O₁₄ crystals from the langasite family is determined by X-ray diffraction analysis [a = 5.202(1) Å, b = 8.312(1) Å, c = 14.394(2) Å, β = 90.02(1)°, sp. gr. A2, Z = 2, and R/R _w = (5.2/4.6)%]. The structure is a derivative of the Ca₃Ga₂Ge₄O₁₄-type structure (a = 8.069 Å, c = 4.967 Å, sp. gr. P321, Z = 1). The crystal studied is a polysynthetic twin with the twin index n = 2, whose monoclinic components are related by pseudomerohedry by a threefold rotation axis of the supergroup P321.     

Crystal structure of the rhombohedral phase of Fe<Subscript>3</Subscript>B<Subscript>7</Subscript>O<Subscript>13</Subscript>Br

The crystal structure of the rhombohedral phase of Fe₃B₇O₁₃Br was determined and compared with the structures of Fe₃B₇O₁₃Cl and Fe₃B₇O₁₃I. The influence of the ionic radii of the halogen atom on the structural features of the crystals of the boracite family is discussed.     

Gallium vacancy ordering in Ga<Subscript>2</Subscript>Se<Subscript>3</Subscript> thin layers on Si(100), Si(111), and Si(123) substrates

Thin Ga₂Se₃ layers deposited on silicon substrates with the (100), (111), and (123) orientations are studied by transmission electron microscopy and X-ray microanalysis. Some features and regularities of the stoichiometric gallium vacancy ordering at different substrate orientations are discussed. The Ga₃Se₄(100)с(2 × 2) and Ga₂Se₃(111)(√3 × √3)-R30° ordered structures are formed on the Si(100) and Si(111) surfaces, respectively.     

Synthesis and crystal chemical characteristics of the structure of <Emphasis Type="Italic">M</Emphasis><Subscript>0.5</Subscript>Zr<Subscript>2</Subscript>(PO<Subscript>4</Subscript>)<Subscript>3</Subscript> phosphates

Double phosphates of zirconium and metals with an oxidation degree of +2 of the composition M_0.5Zr₂(PO₄)₃ (M = Mg, Ca, Mn, Co, Ni, Cu, Zn, Sr, Cd, and Ba) are synthesized and characterized by X-ray diffraction methods and IR spectroscopy. The crystal structures of all the compounds are based on three-dimensional frameworks of corner-sharing PO₄-tetrahedra and ZrO₆-octahedra. Phosphates with large Cd²⁺, Ca²⁺, Sr²⁺, and Ba²⁺ cations octahedrally coordinated with oxygen atoms form rhombohedral structures (space group R3), whereas phosphates with small tetrahedrally coordinated Mg²⁺, Ni²⁺, Cu²⁺, Co²⁺, Zn ²⁺, and Mn²⁺-cations are monoclinic (space group P2₁/n). The effect of various structure-forming factors on the M_0.5Zr₂(PO₄)₃ compounds with a common structural motif but different symmetries are discussed.     

X-Ray Structure Investigation of Sr<Subscript>3</Subscript>NbGa<Subscript>3</Subscript>Si<Subscript>2</Subscript>O<Subscript>14</Subscript> Langasite Family Crystal

An accurate structure analysis of Sr₃NbGa₃Si₂O₁₄ single crystals, belonging to the langasite family, has been performed. Two datasets are obtained on an Xcalibur S diffractometer equipped with a CCD detector. The structure is been refined using an averaged dataset: sp. gr. P 321, Z = 1, 295 K, sin θ/λ ≤ 1.35 Å^–1, a = 8.2797(3) Å, c = 5.0774(5) Å; the agreement factors between the model and experiment are found to be R/wR = 0.76/0.64% and Δρ_min/Δρ_max =–0.21/0.17 e/ų for 3820 independent ref lections. The Sr₃NbGa₃Si₂O₁₄ and Sr₃NbFe₃Si₂O₁₄ structures are compared, and the role of magnetic ions in the predicted P321 → P3 phase transition is analyzed.     

High-pressure synthesis and magnetic properties of Bi<Subscript>0.5</Subscript>D<Subscript>0.5</Subscript>MnO<Subscript>3</Subscript> (<Emphasis Type="Italic">D</Emphasis> = Pb,Ba) solid solutions

Perovskites Bi_0.5D_0.5MnO₃(D = Pb, Ba) were prepared under high pressure (4 GPa) at 1200–1300°C. According to the X-ray diffraction data, crystalline Bi_0.5Pb_0.5MnO₃ has a tetragonal unit cell with the parameters a = 3.940 Å and c = 3.800 Å, whereas Bi_0.5Ba_0.5MnO₃ crystals are cubic with a = 3.940 Å. It is concluded from magnetic studies that lead-containing manganite is an antiferromagnet with T_N = 120 K, whereas Bi_0.5Ba_0.5MnO₃ is a spin glass with spin-freezing temperature T _f = 38 K. Both compounds are decomposed upon heating in air at temperatures above 500°C. With the use of synthesis in air, Bi_0.5Ca_{0.5 ? x}D _x MnO₃ solid solutions with x as high as 0.25 were obtained.     

Crystal structure of (Al,V)<Subscript>4</Subscript>(P<Subscript>4</Subscript>O<Subscript>12</Subscript>)<Subscript>3</Subscript>, archetype of double cubic ring tetraphosphate

The crystal structure of the (Al,V)₄(P₄O₁₂)₃ solid solution, obtained in the single-crystal form by hydrothermal synthesis in the Al(OH)₃-VO₂-NaCl-H₃PO₄-H₂O system, has been solved by X-ray diffraction analysis (Xcalibur-S-CCD diffractometer, R = 0.0257): a = 13.7477(2) Å, sp. gr. I \(\bar 4\)3d, Z = 4, and ρ_calcd = 2.736 g/cm³. It is shown that the crystal structure of the parent cubic Al₄(P₄O₁₂)₃ modification can formally be considered an archetype for the formation of double isosymmetric tetraphosphates on its basis.     

Raman spectroscopy of the ferroelectric-antiferroelectric phase transition in Li<Subscript>0.12</Subscript>Na<Subscript>0.88</Subscript>Ta<Subscript>0.2</Subscript>Nb<Subscript>0.8</Subscript>O<Subscript>3</Subscript> ceramic solid solution

The phase transition in the Li_0.12Na_0.88Ta_0.2Nb_0.8O₃ ceramic solid solution has been studied by Raman scattering spectroscopy at 350°C. A considerable broadening of the lines due to translational vibrations of cations in octahedral and cuboctahedral voids and to vibrations of the oxygen framework, as well as the decrease to zero of the intensity of the line due to bridge stretching vibrations of oxygen atoms of BO₆ octahedral anions, was revealed as the temperature of the solution approached the transition point from below. It was found that the solution loses its ferroelectric properties due to the preferential increase in the anharmonicity of vibrations of cations in octahedral voids.