Studies on the power factor of (Ba,Sr)Co2+xRu4−xO11 compounds

We have prepared polycrystalline single-phase ACo_2+xRu_4−xO₁₁ (A = Sr, Ba; 0 ≤ x ≤ 0.5) using the ceramic method and we have studied their structure, electrical resistivity and Seebeck coefficient, in order to estimate their power factor (P.F.). These layered compounds show values of electrical resistivity of the order of 10⁻⁵ Ωm and their Seebeck coefficients are positive and range from 1 μV K⁻¹ (T = 100 K) to 20 μV K⁻¹ (T = 450 K). The maximum power factor at room temperature is displayed by BaCo₂Ru₄O₁₁ (P.F.: 0.20 μW K⁻² cm⁻¹), value that is comparable to that shown by compounds such as SrRuO₃ and Sr₆Co₅O₁₅.     

Thermoelectric properties of Bi2SexTe3−x prepared by Bridgman method

Bi₂Se_xTe_3−x crystals with various x values were grown by Bridgman method. The electrical conductivity, σ, was found to decrease with increasing Se content. The highest σ of 1.6 × 10⁵ S m⁻¹ at room temperature was reached at x = 0.12 with a growth rate of 0.8 mm h⁻¹. The Seebeck coefficient, S, was less dependent on Se content, all with positive values showing p-type characteristics, and the highest S was measured to be 240 μV K⁻¹ at x = 0.24. The lowest thermal conductivity, κ, was 0.7 W m⁻¹ K⁻¹ at x = 0.36. The electronic part of κ, κ_el, showed a decrease with increasing Se content, which implies that the hole concentration as the main carriers was reduced by the addition of Se. The highest dimensionless figure of merit, ZT, at room temperature was 1.2 at x = 0.36, which is attributed to the combination of a rather high electrical conductivity and Seebeck coefficient and low thermal conductivity.     

Structural, morphological and optical properties of Bi2−xSbxSe3 thin films grown by electrodeposition

Ternary single-phase Bi_2−xSb_xSe₃ alloy thin films were synthesized onto Au(1 1 1) substrates from an aqueous solution containing Bi(NO₃)₃, SbCl₃, and SeO₂ at room temperature for the first time via the electrodeposition technique. The electrodeposition of the thin films was studied using cyclic voltammetry, compositional, structural, optical measurements and surface morphology. It was found that the thin films with different stoichiometry can be obtained by controlling the electrolyte composition. The as-deposited films were crystallized in the preferential orientation along the (0 1 5) plane. The SEM investigations show that the film growth proceeds via nucleation, growth of film layer and formation of spherical particles on the film layer. The particle size and shape of Bi_2−xSb_xSe₃ films could be changed by tuning the electrolyte composition. The optical absorption spectra suggest that the band gap of this alloy varied from 0.24 to 0.38 eV with increasing Sb content from x = 0 to x = 0.2.     

Effect of Cr7C3 on the mechanical, thermal, and electrical properties of Cr2AlC

In this work, phase pure Cr₂AlC and impure Cr₂AlC with Cr₇C₃ have been fabricated to investigate the mechanical, thermal, and electrical properties. The thermal expansion coefficient is determined as 1.25 × 10⁻⁵ K⁻¹ in the temperature range of 25-1200 °C. The thermal conductivity of the Cr₂AlC is 15.73 W/m K when it is measured at 200 °C. With increasing temperature from 25 °C to 900 °C, the electrical conductivity of Cr₂AlC decreases from 1.8 × 10⁶ Ω⁻¹ m⁻¹ to 5.6 × 10⁵ Ω⁻¹ m⁻¹. For the impure phase of Cr₇C₃, it has a strengthening and embrittlement effect on the bulk Cr₂AlC. And the Cr₂AlC with Cr₇C₃ would result in a lower high-temperature thermal expansion coefficient, thermal conductivity, specific heat capacity and electrical conductivity.     

Electrical properties of binder-free thick film BaYxBi1−xO3 NTC thermistors

The microstructure and electrical properties of BaY_xBi_1−xO₃ thick film negative temperature coefficient thermistors, fabricated by screen printing, were investigated. The sintered thick films were the single-phase solid solutions of the BaY_xBi_1−xO₃ compounds with a monoclinic structure. The added Y₂O₃ led to a significant decrease in the grain size of the thermistors. The resistivity and coefficient of temperature sensitivity for the BaY_xBi_1−xO₃ (0 ≤ x ≤ 0.15) thick film NTC thermistors decreased first with increasing x in the range of x < 0.04 and then increased with further increase in x.     

CuIn1−xAlxS2 thin films prepared by sulfurization of metallic precursors

CuIn_1−xAl_xS₂ thin films (x = 0, 0.09, 0.27, 0.46, 0.64, 0.82 and 1) with thicknesses of approximately 1 μm were formed by the sulfurization of DC sputtered Cu-In-Al precursors. All samples were sulfurized in a graphite container for 90 min at 650 °C in a 150 kPa Ar + S atmosphere. Final films were studied via X-ray diffraction (XRD), scanning electron microscopy (SEM) and micro-Raman spectroscopy. It was found that all samples were polycrystalline in nature and their lattice parameters varied slightly nonlinearly from {a = 5.49 Å, c = 11.02 Å} for CuInS₂ to {a = 5.30 Å, c = 10.36 Å} for CuAlS₂. No unwanted phases such as Cu_2−xS or others were observed. Raman were recorded at a room temperature and the most intensive and dominant A₁ phonon frequency varied nonlinearly from 294 cm⁻¹ (CuInS₂) to 314 cm⁻¹ (CuAlS₂).     

Structural, elastic and electronic properties of Mg(Cu1−xZnx)2 alloys calculated by first-principles

The structural, elastic and electronic properties of Mg(Cu_1−xZn_x)₂ alloys (x = 0, 0.25, 0.5,and 0.75) were investigated by means of first-principle calculations within the framework of density functional theory (DFT). The calculation results demonstrated that the partial substitution of Cu with Zn in MgCu₂ leaded to an increase of lattice constants, and the optimized structural parameters were in very good agreement with the available experimental values. From energetic point of view, it was found that with increase of Zn content the structural stability of Mg(Cu_1−xZn_x)₂ alloys decreased apparently. The single-crystal elastic constants were obtained by computing total energy as a function of strain, and then the bulk modulus B, shear modulus G, Young's modulus Y and Poisson's ratio ν of polycrystalline aggregates were derived. The calculated results showed that among the Mg(Cu_1−xZn_x)₂ alloys, MgCuZn exhibited the largest stiffness, while Mg₂Cu₃Zn showed the best ductility. Finally, the electronic density of states (DOSs) and charge density distribution were further studied and discussed.     

Fabrication and properties of p-type K doped Zn1−xMgxO thin film

A series of K doped Zn_1−xMg_xO thin films have been prepared by pulsed laser deposition (PLD). Hall-effect measurements indicate that the films exhibit stable p-type behavior with duration of at least six months. The band gap of the K doped Zn_1−xMg_xO films undergoes a blueshift due to the Mg incorporation. However, photoluminescence (PL) results reveal that the crystallinity decreased with the increasing of Mg content. The fabricated K doped p-type Zn_0.95Mg_0.05O thin film exhibits good electrical properties, with resistivity of 15.21 Ω cm and hole concentration of 5.54 × 10¹⁸ cm⁻³. Furthermore, a simple ZnO-based p-n heterojunction was prepared by deposition of a K-doped p-type Zn_0.95Mg_0.05O layer on Ga-doped n-type ZnO thin film with low resistivity. The p-n diode heterostructure exhibits typical rectification behavior of p-n junctions.     

Combustion synthesis of Ti3Si1−xAlxC2 solid solutions from TiC-, SiC-, and Al4C3-containing powder compacts

Preparation of the Ti₃Si_1−xAl_xC₂ solid solution with x = 0.2-0.8 was investigated by self-propagating high-temperature synthesis (SHS) using TiC-, SiC-, and Al₄C₃-containing powder compacts. Due to the variation of reaction exothermicity with sample stoichiometry, the combustion temperature and reaction front velocity decreased with increasing Al content of Ti₃Si_1−xAl_xC₂ for the TiC- and Al₄C₃-added samples, but increased for the samples with SiC. In contrast to the formation of Ti₃(Si,Al)C₂ as the dominant phase for the TiC- and SiC-added samples, TiC was identified as the major constituent in the final products of samples adopting Al₄C₃. In addition, the evolution of Ti₃(Si,Al)C₂ was improved by increasing the Al content of the TiC- and SiC-added powder compacts, but deteriorated considerably upon the increase of Al₄C₃ in the Al₄C₃-containing sample.     

Thermoelectric properties of p-type Pb-doped Bi85Sb15−xPbx alloys at cryogenic temperatures

In this study we have investigated the effect of the Pb on the thermoelectric propertied of Bi-Sb alloy with different Pb-content. The Pb-doped Bi₈₅Sb_15−xPb_x (x = 0, 0.5, 1, 2, 3) alloys were synthesized by mechanical alloying followed by pressureless sintering. The crystal structure was characterized by X-ray diffraction. The Seebeck coefficients, electrical conductivities, and thermal conductivities were measured in the temperature range of 77-300 K. The results show that all the Pb-doped alloys are p-type thermoelectric materials in the whole measurement temperature range. A minimum thermal conductivity of 1.7 W/mK was obtained for Bi₈₅Sb₁₂Pb₃ sample at 150 K. A maximum ZT value of 0.11, which is higher than those previous reported, was obtained for Bi₈₅Sb₁₄Pb₁ at 210 K.     

The studies of phase relation, microstructure, magnetic transition, magnetocaloric effect in (Gd1−xErx)5Si1.7Ge2.3 compounds

The phase relation, microstructure, Curie temperatures (T_C), magnetic transition, and magnetocaloric effect of (Gd_1−xEr_x)₅Si_1.7Ge_2.3 (x = 0, 0.05, 0.1, 0.15, and 0.2) compounds prepared by arc-melting and then annealing at 1523 K (3 h) using purity Gd (99.9 wt.%) are investigated. The results of XRD patterns and SEM show that the main phases in those samples are mono-clinic Gd₅Si₂Ge₂ type structure. With increase of Er content from x = 0 to 0.2, the values of magnetic transition temperatures (T_C) decrease linearly from 228.7 K to 135.3 K. But the (Gd_1−xEr_x)₅Si_1.7Ge_2.3 compounds display large magnetic entropy near their transition temperatures in a magnetic field of 0-2 T. The maximum magnetic entropy change in (Gd_1−xEr_x)₅Si_1.7Ge_2.3 compounds are 24.56, 14.56, 16.84, 14.20, and 13.22 J/kg K⁻¹ with x = 0, 0.05, 0.1, 0.15, and 0.2, respectively.     

Bismuth-containing semiconductors: Linear and nonlinear optical susceptibilities of GaAs1−xBix alloys

Using all electron full potential - linearized augmented plane wave (FP-LAPW) method the linear and nonlinear optical susceptibilities of cubic GaAs_1−xBi_x alloys with x varying between 0.25 and 0.75 with increment of 0.25 are investigated. We have applied the generalized gradient approximation (GGA) for the exchange and correlation potential. In addition the Engel-Vosko generalized gradient approximation (EVGGA) was used. The reflectivity, refractivity, absorption coefficient and the loss function of these ternary alloys were investigated. The absorption coefficient shows that GaAs_0.25Bi_0.75 possess the highest coefficient among the investigated alloys which supports our previous observation that the band gap decreases substantially with increasing Bi content and the materials with very small energy band gap possess the highest absorption coefficient. The investigation of the linear and nonlinear optical susceptibilities of GaAs_1−xBi_x shows a strong band gap reduction as commonly found experimentally.     

Effect of non-magnetic doping on multi-step magnetization behavior of Dy50−xAlxAg50

The electrical transport and magnetization measurements have been carried out on Al-doped polycrystalline intermetallic compounds Dy_50−xAl_xAg₅₀ (x = 0, 0.3, 0.6, 1.2, 1.8) in a pulsed high magnetic field, in which multi-step magnetization is observed. Partial substitute of non-magnetic Al³⁺ for Dy³⁺ ions in the compounds increases the critical magnetic fields and the relative area of the magnetic hysteresis loop, which result from the pinning effect, lattice distortion, the change of coupling strength and dilution effect related to the Al³⁺ doping.The experimental results indicate that non-magnetic Al³⁺ ions and induced amorphous phase can pin the rotation and/or growth of magnetic domains, thus, the critical magnetic field can be enhanced by doping non-magnetic ions in the magnetic materials, especially in the permanent magnet materials.     

Thermoelectric properties of Cu1−xPtxFeO2 (0.0 ≤ x ≤ 0.05) delafossite-type transition oxide

The samples of Cu_1−xPt_xFeO₂ (0 ≤ x ≤ 0.05) delafossite were synthesized by solid state reaction method for studying thermoelectric properties. The properties of Seebeck coefficient, electrical conductivity and thermal conductivity were measured in the high temperature ranging from 300 to 960 K. The results of Seebeck coefficient, electrical conductivity and power factor were increased with increasing Pt substitution and temperature. The thermal conductivity was decreased from 5.8 to 3.5 W/mK with increasing the temperature from 300 to 960 K. An important results, the highest value of power factor and ZT is 2.0 × 10⁻⁴ W/mK² and 0.05, respectively, for x = 0.05 at 960 K.     

Effect of the impurity LixNi1−xO on the electrochemical properties of 5 V cathode material LiNi0.5Mn1.5O4

The formation of impurity Li_xNi_1−xO when synthesizing spinel LiNi_0.5Mn_1.5O₄ using solid state reaction method, and its influence on the electrochemical properties of product LiNi_0.5Mn_1.5O₄ were studied. The secondary phase Li_xNi_1−xO emerges at high temperature due to oxygen deficiency for LiNi_0.5Mn_1.5O₄ and partial reduction of Mn⁴⁺ to Mn³⁺ in LiNi_0.5Mn_1.5O₄. Annealing process can diminish oxygen deficiency and inhibit impurity Li_xNi_1−xO. The impurity reduces the specific capacity of product, but it does not have obvious negative effect on cycle performance of product. The capacity of LiNi_0.5Mn_1.5O₄ that contains Li_xNi_1−xO can deliver about 120 mAh g⁻¹.     

Relationships between Zr substitution for Ti and microwave dielectric properties in Mg(ZrxTi1−x)O3 ceramics

The influence of Zr substitution for Ti on the microwave dielectric properties and microstructures of the Mg(Zr_xTi_1−x)O₃(MZ_xT) (0.01 ≤ x ≤ 0.3) ceramics was investigated. The quality factors of Mg(Zr_xTi_1−x)O₃ ceramics with x = 0.01-0.05 were improved because the solid solution of a small amount of Zr⁴⁺ substitution in the B-site could increase density and grain size. An excess of Zr⁴⁺ resulted in the formation of a great deal of secondary phase that declined the microwave dielectric properties of MZ_xT ceramics. The temperature coefficient of resonant frequency (τ_f) of Mg(Zr_xTi_1−x)O₃ ceramics slightly increased with increasing Zr content, and the variation in τ_f was attributed to the formation of secondary phases.     

Preparation and characterization of La1−xKxFeO3 (x = 0-1) by self-propagating high-temperature synthesis for use as soot combustion catalyst

This paper proposes La_1−xK_xFeO₃ prepared by self-propagating high-temperature synthesis (SHS) as an alternative to platinum catalysts for promoting diesel soot combustion. The catalytic property of eleven products SHSed with different substitution ratios of potassium (x = 0-1) was experimentally evaluated using a thermobalance. In the mass loss curves of the product, T₅₀ was defined as the temperature at which the weight of the reference soot decreases to half its initial weight. The BET specific surface area of SHSed La_1−xK_xFeO₃ depended on x strongly. All the products showed good oxidation catalytic activity. Despite having the smallest surface area (0.11 m²/g) among the obtained products, La_0.9K_0.1FeO₃ (x = 0.1) was found to be the best catalyst with the lowest T₅₀ (442 °C). T₅₀ of La_1−xK_xFeO₃ decreased with increasing x for x > 0.2. The products with x = 0.6 and 0.8 were the second-best catalysts in terms of their T₅₀. Moreover, average apparent activation energy of La_0.9K_0.1FeO₃ (x = 0.1) calculated by Friedman method using TG was as much as 61 kJ/mol lower than that of Pt/Al₂O₃ catalyst. In conclusion, potassium-substituted SHSed La_1−xK_xFeO₃ can be used as an alternative to Pt/Al₂O₃ for soot combustion.     

Preparation, structure and electrical conductivity of the pyrochlore-type phase Sm2Zr2O7 codoped with bivalent magnesium and trivalent dysprosium cations

The pyrochlore-type phases with the compositions of SmDy_1−xMg_xZr₂O_7−x/2 (0 ≤ x ≤ 0.20) have been prepared by pressureless-sintering method for the first time as possible solid electrolytes. The structure and electrical conductivity of SmDy_1−xMg_xZr₂O_7−x/2 ceramics have been studied by the X-ray diffraction (XRD), scanning electron microscopy (SEM) and impedance spectroscopy measurements. SmDy_1−xMg_xZr₂O_7−x/2 (x = 0, 0.05, 0.10) ceramics exhibit a single phase of pyrochlore-type structure, and SmDy_1−xMg_xZr₂O_7−x/2 (x = 0.15, 0.20) ceramics consist of pyrochlore phase and a small amount of the second phase magnesia. The total conductivity of SmDy_1−xMg_xZr₂O_7−x/2 ceramics obeys the Arrhenius relation, and the total conductivity of each composition increases with increasing temperature from 673 to 1173 K. SmDy_1−xMg_xZr₂O_7−x/2 ceramics are oxide-ion conductors in the oxygen partial pressure range of 1.0 × 10⁻⁴ to 1.0 atm at all test temperature levels. The highest total conductivity value is about 8 × 10⁻³ S cm⁻¹ at 1173 K for SmDy_1−xMg_xZr₂O_7−x/2 ceramics.     

Growth and characterization of chemical bath deposited Cd1−xZnxS thin films

Cd_1−xZn_xS (0 ≤ x ≤ 1) thin films have been deposited by chemical bath deposition method on glass substrates from aqueous solution containing cadmium acetate, zinc acetate and thiourea at 80 ± 5 °C and after annealed at 350 °C. The structural, morphological, compositional and optical properties of the deposited Cd_1−xZn_xS thin films have been studied by X-ray diffractometer, scanning electron microscopy (SEM), energy dispersive X-ray analysis (EDX), photoluminescence (PL) and UV-vis spectrophotometer, respectively. X-ray diffraction analysis shows that for x < 0.8, the crystal structure of Cd_1−xZn_xS thin films was hexagonal structure. For x > 0.6, however, the Cd_1−xZn_xS films were grown with cubic structure. Annealing the samples at 350 °C in air for 45 min resulted in increase in intensity as well as a shift towards lower scattering angles. The parameters such as crystallite size, strain, dislocation density and texture coefficient are calculated from X-ray diffraction studies. SEM studies reveal the formation of Cd_1−xZn_xS films with uniformly distributed grains over the entire surface of the substrate. The EDX analysis shows the content of atomic percentage. Optical method was used to determine the band gap of the films. The photoluminescence spectra of films have been studied and the results are discussed.     

Gd3+掺杂La2Mo2O9的相稳定性及热导率

La2Mo2O9具有极低的热导率,但其在580℃左右会发生α-β相变,严重影响其性能和应用。本实验以Gd203掺杂La2Mo2O9制备了一系列La2-xGdxMo2O9 (x=0.0~0.5)固溶体,研究了掺杂Gd3+对La2Mo2O9相稳定性和热导率的影响。结果表明,随着Gd3+掺杂量的增加,相变得到有效抑制,当x≥0.2时样品以β相存在。样品的热导率随Gd3+掺杂量的增加先减小后增加,室温下在x=0.2时达到最低,此后缓慢上升,但所有样品的热导率均小于1 W/(m·K)。